• 한국재료학회지
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• 제16권3호
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• pp.188-192
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• 2006

The microstructures and mechanical properties of continuously porous $SiC-Si_3N_4$composites fabricated by multi-pass extrusion were investigated at different Si levels added. Si-powder with different weight percentages (0%, 5%, 10%, 15%, 20%) was added to the SiC powder to make the raw mixture powders, with $6wt%Y_2O_3-2wt%Al_2O_3$ as sintering additives, carbon ($10-15{\mu}m$) as a pore-forming agent, ethylene vinyl acetate as a binder and stearic acid ($CH_3(CH_2)_{16}COOH$) as a lubricant. In the continuously porous $SiC-Si_3N_4$ composites, $Si_3N_4$ whiskers like the hairs of nostrils were frequently observed on the wall of the pores. In this study, the morphology of the $Si_3N_4$ whiskers was investigated with the silicon addition content. In the composites containing of 10 wt% Si, a large number of $Si_3N_4$ whiskers was found at the continuous pore regions. In the sample to which 15 wt% Si powder was added, maximum values of about 101 MPa bending strength and 57.5% relative density were obtained.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.316-319
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• 2000

By RF magnetron sputtering ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate. Crystallographic orientation was characterized by x-ray diffraction(XRD). Surface morphology and microstructure were observed by scanning electron microscope(SEM). Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. PL spectrum of ZnGa$_2$O$_4$thin films showed broad band luminescence spectrum.

• 한국세라믹학회지
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• 제24권3호
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• pp.227-234
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• 1987

With the content of ZnO varing from 10.5 to 47.4 wt%, the crystallization of lithium zinc silicate glass was investigated by DTA, XRD, and SEM. In this work P2O5 was used as nucleation agent. The crystallization temperature was found to increase with the content of ZnO and the microstructure of formed crystalling phases was studied through the scanning electron microscopy. According to the XRD analysis, the crystal phases formed are summarized as follows. 1) The major phases are lithium orthosilicate, lithium disilicate and quartz at 10.5 wt% ZnO. 2) Lithium zinc silicate polymorphous and cristobalite occur in the composition varying 21.3 to 30.8 wt% ZnO. 3) At composition containing 47.4wt% ZnO some quantity of willemite is formed.

• 한국세라믹학회지
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• 제37권7호
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• pp.660-664
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• 2000

Effect of various kinds of additive such as AlOOH, Al(OH)3, Al2Si2O5(OH)4, Nb2O5, TiO2 and MgO on the properties and microstructures of UO2 pellet has been examined. All the tested dopants had played a role to reduce sintered density and open porosity. It was revealed that the addition of TiO2 made pellet more stable thermally. UO2 pellet doped with 0.2wt% TiO2 was swelled rather than densified after annealing for 24 hrs at 1$700^{\circ}C$. It was attributed to large pore with spherical shape. Titinia and silicon coexisted with Al element were more effective to increase grain size than other additives. It could be also revealed that the formation of liquid phase was the main cause of grain growth.

• 한국분말재료학회지
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• 제10권3호
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• pp.190-194
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• 2003

Thin Ag films deposited onto $SiO_2/Si$ substrates by DC magnetron sputtering and thereafter annealed ,it temperatures 100-50$0^{\circ}C$ are investigated by scanning tunneling and atomic forte microscopy. It is shown that the film surface topography and microstructure are considerably changed as a result of annealing. To provide a quantitative estimation of the surface topography changes of Ag films the surface fractal dimension was calculated. Elasticity and hardness of the films are studied by a nanoindentation technique. The films are found to have value of elastic modulus close to that of bulk silver while their hardness and yield stress are essentially higher.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권10호
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• pp.467-474
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-TiB_2$ electroconductive ceramic composites was investigated. The $SiC-TiB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] $Al_2O_3+Y_2O_3(6:4\;mixture\;of\;Al_2O_3\;and\;Y_2O_3)$ as a sintering aid. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 84.92[%], 140[MPa], 4.07[GPa] and $3.13[MPa{\cdot}m^{1/2}]$ for $SiC-TiB_2$ composites of $1,900[^{\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The electrical resistivity showed the value of $5.51{\times}10^{-4},\;2.11{\times}10^{-3},\;7.91{\times}10^{-4}\;and\;6.91{\times}10^{-4}[\Omega{\cdot}cm]$ for ST1750, ST1800, ST1850 and ST1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $3.116{\times}10^{-3},\;2.717{\times}10^{-3},\;2.939{\times}10^{-3},\;3.342{\times}10^{-3}/[^{\circ}C]$ for ST1750, ST1800, ST1850 and ST1900 respectively in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. It is assumed that because polycrystallines, such as recrystallized $SiC-TiB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-TiB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.374-378
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• 1999

Thin Films of BaYTiO system were Prepared by frequency (rf)/dc magnetron sputtering method. The preparation of target were accomplished by the mixed oxide method, and their composition consisted of the $Ba_{0.997}$ $Y_{0.003}$Ti $O_3$+0.5 $SiO_2$+x $M_{n}$O(x=0, 0.073, 0.1, 0.127, 0.154). The average particle size of (Ba,Y)Ti $O_2$ system ceramics with Mn $O_2$ additives increases as the amount of MnO additives increase and reaches the maximum grain growth when the amount of MnO is 0.127(mol%).).).).

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권9호
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• pp.434-441
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3\;and\;Y_2O_3$) as a sintering aid. The relative density and mechanical properties are increased markedly at temperatures in the range of $1,850{\sim}1,900[{^\circ}C]$. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 81.1[%], 230[MPa], 9.88[GPa] and $6.05[MPa\;m^{1/2}]$ for $SiC-ZrB_2$ composites of $1,900[{^\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[{^\circ}C]\;to\;700[{^\circ}C]$, The electrical resistivity showed the value of $1.36{\times}10^{-4},\;3.83{\times}10^{-4},\;3.51{\times}10^{-4}\;and\; 3.2{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $4.194{\times}10^{-3},\;3,740{\times}10^{-3},\;2,993{\times}10^{-3},\;3,472{\times}10^{-3}/[^{\circ}C}$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively in the temperature ranges from $25[{\circ}C]\;to\;700[{\circ}C]$, It is assumed that because polycrystallines such as recrystallized $SiC-ZrB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-ZrB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1041-1042
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• 2006

High heat-resistant Al-Fe-V-Si and Al-Fe-V-Si-X rapidly solidified powder metallurgy (RS P/M) alloys have been developed under well-controlled high purity argon gas atmosphere. The $Al_{90.49}Fe_{6.45}V_{0.68}Si_{2.38}$ (at. %) RS P/M alloy exhibited high elevated-temperature strength exceeding 300 MPa and good ductility with elongation of 6 % at 573 K. Reduction of $H_2O$ partical pressure in P/M processing atmosphere led to improvement in mechanical properties of the powder-consolidated alloys under elevated-temperature service conditions. Ti addition to the Al-Fe-V-Si conduced to enhancement of the strength at room temperature. The tensile yeild strength and ultimate strenght were 545 MPa and 722 MPa, respectively.

• 대한전기학회논문지
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• 제44권7호
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• pp.914-918
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• 1995

In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.