• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.124-124
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• 2014

Plasma Electrolytic Oxidation(PEO)를 적용하여 두께 $120{\mu}m$의 알루미늄 판에 $Al_2O_3$ 산화피막을 형성하였다. 전해액의 주성분 KOH 와 $Na_2SiO_3$에 $Na_3P_2O_7$, $H_3PO_4$의 첨가제를 넣어 산화피막을 분석하였다. 첨가제 $Na_3P_2O_7$ 을 넣었을 때 치밀한 구조를 갖는 산화피막이 형성됨을 알 수 있었다. 특히 KOH, $Na_2SiO_3$, $Na_3P_2O_7$의 비율이 5:5:2 일때 가장 치밀하고 균질한 구조를 갖는 산화피막이 형성되었다.

• Journal of the Korean Magnetics Society
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• v.5 no.4
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• pp.281-286
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• 1995

In order to study the effect of additives $SiO_{2}$ on the magnetic properties of hexaferrite sheet magnet, we used X-ray diffractometer, Mossbauer spectrometer, and VSM magnetometer. We have prepared $Ba_{0.25}Sr_{0.75}Fe_{12}O_{19}$ green sheets by the Dr. Blade method. Most of samples have a magnetoplurnbite crystal structure of typical M-type hexaferrite. The lattice parameters are found not to be affected by the addition of $SiO_{2}$. ${\alpha}-Fe_{2}O_{3}$ phase develops above $SiO_{2}$ 2.0 wt.%. Isomer shifts indicate that the valence of Fe ions is trivalent. Curie temperatures decrease slightly with increasing $SiO_{2}$ concentrations. It means that the $Si^{4+}$ subsitution for 12k-site $Fe^{3+}$ has an effect on the superexchange interactions Fe-O-Fe, which change the distance and the angle between cations and anions. It was suggested that ${\alpha}-Fe_{2}O_{3}$ phase results from the excessive Fe produced by subsituting $Si^{4+}$ for $Fe^{3+}$. Based upon the results of $Ba_{0.25}Sr_{0.75}Fe_{12}O_{19}$ added with $SiO_{2}$, we concluded that $H_{c}$, $M_{s}$ and $M_{r}$ depend more strongly on the microstructure chracteristics than on the cation substitution.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1588-1590
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC - 39vol.% $TiB_2$ and using 61vol.% SiC 39vol.% WC powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at 1800$^{\circ}C$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, WC were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H), $TiB_2$ and YAG($Al_5Y_3O_{12}$) crystal phase on the SiC-$TiB_2$, and SiC(2H), WC and YAG($Al_5Y_3O_{12}$) crystal phase on the SiC-WC composites. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was ocurred on the SiC-$TiB_2$, but ${\alpha}{\rightarrow}{\beta}$-SiC reverse transformation was not occurred on the SiC-WC composites. The relative density, the flexural strength showed respectively value of 96.2%, 310.19Mpa in SiC-WC composites. The electrical resistivity of the SiC-$TiB_2$ and the SiC-WC composites is all positive temperature cofficient resistance(PTCR) in the temperature ranges from 25$^{\circ}C$ to 500$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.12-13
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• 2006

Ferroelectric Cerium-substituted $Bi_4Ti_3O_{12}$ thin films with a thickness of 200 nm were deposited using the liquid delivery metal organic chemical vapor deposition process onto a Pt(111)/Ti/$SiO_2$/Si(100) substrate. At annealing temperature above $600^{\circ}C$, the BCT thin films became crystallized and exhibited a polycrystalline structure. The BCT thin film annealed at $720^{\circ}C$ showed a large remanent polarization ($2P_r$) of $44.56\;{\mu}C/cm^2$ at an applied voltage of 5V. The BCT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied electric field of ${\pm}5\;V$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.290-291
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• 2006

The effect of praseodymium substitution on the ferroelectric properties of $Bi_4Ti_3O_{12}$ thin films have been investigated. Ferroelectric Pr-substituted $Bi_4Ti_3O_{12}$ thin films were fabricated by chemical solution deposition onto Pt/Ti/$SiO_2$/Si substrates. The structure and morphology of the films were analyzed using Xray diffraction, and scanning electron microscopy, respectively. About 200-nm-thick BPT films grown at $720^{\circ}C$ exhibited a polycrystalline structure and showed excellent ferroelectric properties with a remanent polarization ($2P_r$) of $28.21\;{\mu}C/cm^2$ at an applied voltage of 5 V. The films a1so demonstrate fatigue-free behavior up to $10^{11}$ read/write switching cycles with 1 MHz bipolar pulses at an electric field of ${\pm}5\;V$.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.671-678
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• 2001

All solid-state thin film micro supercapacitor, which consists of $RuO_2$/LiPON/$RuO_2$ multi layer structure, was fabricated on Pt/Ti/Si substrate using a $RuO_2$ electrode. Bottom $RuO_2$ electrode was grown by dc reactive sputtering system with increasing $O_2/[Ar+O_2]$ ratio at room temperature, and a LiPON electrolyte film was subsequently deposited on the bottom $RuO_2$ electrode at pure nitrogen ambient by rf reactive sputtering system. Room temperature charge-discharge measurements based on a symmetric $RuO_2$/LiPON/$RuO_2$ structure clearly demonstrates the cyclibility dependence on the microstructure of the $RuO_2$ electrode. Using both glancing angle x-ray diffraction (GXRD) and transmission electron microscopy (TEM) analysis, it was found that the microstructure of the $RuO_2$ electrode was dependent on the oxygen flow ratio. In addition, x- ray photoelectron spectroscopy(XPS) examination shows that the Ru-O binding energy is affected by increasing oxygen flow ratio. Furthermore, TEM and AES depth profile analysis after cycling demonstrates that the interface layer formed by interfacial reaction between LiPON and $RuO_2$ act as a main factor in the degradation of the cyclibility of the thin film micro-supercapacitor.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.178-179
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• 2014

In this study, $Ni-W-Si_3N_4$ alloy composite coatings were prepared by pulse electrodeposition method using nickel sulfate bath with different contents of tungsten source, $Na_2WO_4.2H_2O$, and dispersed $Si_3N_4$ nano particles. The structure and microstructure ofcoatings was separately analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM). Results indicated that nano $Si_3N_4$ and W content in alloy had remarkable effect on microstructure, microhardness and scratch resistant properties. Tungsten content in Ni-W and $Ni-W-Si_3N_4$ alloy ranged from 7 to 14 at.%. Scratch test results suggest that as compared to Ni-W only, $Ni-W-Si_3N_4$ prepared from Ni/W molar ratio of 1:1.5 dispersed with 20 g/L $Si_3N_4$ has shown the best result among different samples.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.386-391
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• 2014

Silicon nitride ($Si_3N_4$) is regarded as one of the most promising materials for high temperature structural applications due to its excellent mechanical properties at both room and elevated temperatures. However, one high-temperature $Si_3N_4$ material intended for use in radomes has a relatively high dielectric constant of 7.9 - 8.2 at 8 - 10 GHz. In order to reduce the dielectric constant of the $Si_3N_4$, an in-situ reaction process was used to fabricate $Si_3N_4-SiO_2$-BN composites. In the present study, an in-situ reaction between $B_2O_3$ and $Si_3N_4$, with or without addition of BN in the starting powder mixture, was used to form the composite. The in-situ reaction process resulted in the uniform distribution of the constituents making up the composite ceramic, and resulted in good flexural strength and dielectric constant. The composite was produced by pressure-less sintering and hot-pressing at $1650^{\circ}C$ in a nitrogen atmosphere. Microstructure, flexural strength, and dielectric properties of the composites were evaluated with respect to their compositions and sintering processes. The highest flexural strength (193 MPa) and lowest dielectric constant (5.4) was obtained for the hot-pressed composites. The strength of these $Si_3N_4-SiO_2$-BN composites decreased with increasing BN content.

• Journal of Welding and Joining
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• v.14 no.6
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• pp.93-100
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• 1996

Effect of a flux composition on weld metal toughness in submerged arc welding with 60kgf/$\textrm{mm}^2$ grade C-Mo type wires was investigated and interpreted in terms of weld metal microstructure and hardenability. Flux workability was also studied by characterizing a weld bead profile. Compared to other weld metals, .weld metal used alumina basic flux with nickel showed lowest oxygen content, highest hardenability and the most acicular ferrite. The highest impact toughness of that weld metal, however, was attributed to the tough matrix due to the nickel rather than to the larger amount of acicular ferrite. Manganese silicate flux had better workability than alumina basic flux, showing broader welding conditions resulting in a depth-to-width ratio of 0.5. The composition of oxides in the weld metal was dependent on the flux composition, showing MnO-SiO$_2$-TiO in manganese silicate flux and MnO-SiO$_2$-Al$_2$O$_3$-TiO in alumina basic flux. MnO-SiO$_2$composition in both oxides was similar to a tephroite.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.281-290
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• 2011

In order to gain better understanding of the selective surface oxidation and its influence on the galvanizability of a transformation-induced plasticity (TRIP) assisted steel containing 1.5 wt.% Si and 1.6 wt.% Mn, a model experiment has been carried out by depositing Si and Mn (each with a nominal thickness of 10 nm) in either monolayers or bilayers on a low-alloy interstitial-free (IF) steel sheet. After intercritical annealing at $800^{\circ}C$ in a $N_2$ ambient with a dew point of $-40^{\circ}C$, the surface scale formed on 590 MPa TRIP steel exhibited a microstructure similar to that of the scale formed on the Mn/Si bilayer-coated IF steel, consisting of $Mn_{2}SiO_{4}$ particles embedded in an amorphous $SiO_{2}$ film. The present study results indicated that, during the intercritical annealing process of 590 MPa TRIP steel, surface segregation of Si occurs first to form an amorphous $SiO_{2}$ film, which in turn accelerates the out-diffusion of Mn to form more stable Mn-Si oxide particles on the steel surface. During hot-dip galvanizing, particulate $Fe_{3}O_{4}$, MnO, and Si-Mn oxides were reduced more readily by Al in a Zn bath than the amorphous $SiO_{2}$ film. Therefore, in order to improve the galvanizability of 590 TRIP steel, it is most desirable to minimize the surface segregation of Si during the intercritical annealing process.