• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.377-378
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• 2005

In this study, $SiO_2$ thin film was deposited on variable conditions of the RF power and working pressure by RF magnetron sputtering to apply to the Bragg reflector of the SMR type FBAR device. A crystal orientation and microstructure of $SiO_2$ thin film was studied by using the XRD, AFM and SEM. The best condition was obtained through analyzing the structural characteristics of thin film. Finally, FBAR device was fabricated with applying the best condition of $SiO_2$ thin film and the resonant characteristics was investigated by network analyzer to verify application possibility as a efficient device.

• 한국세라믹학회지
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• 제28권10호
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• pp.803-809
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• 1991

Microstructure, room temperature resistivity and temperature coefficient of resistance of BaTiO3 ceramics were characterized and measured in this study. The basic composition of the BaTiO3 cremics was formed by adding 0.25 mol% Dy2O3 and 0.07 mol% MnO2 to the BaTiO3 composition. Samples of the BaTiO3 ceramics were prepared by adding various amounts of the TiO2, SiO2 and Al2O3 to the basic composition. An addition of 1 mol% TiO2, 2 mol% SiO2 and 0.5 mol% Al2O3 to the basic composition resulted both the values of the room temperature resistivity and the temperatured coefficient being maxium. Meanwhile, an addition of 1 mol% TiO2 and 1 mol% Al2O3 to the basic composition resulted the value of the room temperature resistivity maxium and the temperature coefficient minimum. The temperature coefficient showed a maximum value as well as a minimum value when the three kinds of the additives were added together to the basic composition of the BaTiO3 ceramics. Maxed phases of BaTi3O7, BaTiSiO5 and BaAl2Si2O8 were present at the grain boundary.

• 한국세라믹학회지
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• 제23권3호
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• pp.87-93
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• 1986

Yttria-bismuth-stabilized zirconia was investigated with respect to the amount of $Bi_2O_3$ addition in the ran-ge of 0.5~5mol% to the base composition of $(ZrO_2)_{0.92}(Y_2O_3)_{0.08}.Bismuth was introduced into the ma-terial with $Bi_2O_3-SiO_2$ glasses in order to reduce the evaporation of components. The sinterbility evaporation of components phase formation and microstructure were evaluated depending on the amount of $Bi_2O_3-SiO_2$ glass addition. Two probe A. C conductivity measurement was subjected to all the specimens and the result was discussed on the possible substitution of $Bi^{3+}$ for $Zr^{4+}$ and interistial $Si^{4+}$ in the fluorite structure of zirconia crystal there-upon the possible change in the capability of oxygen transference within the material. It was found that the addition of $Bi_2O_3$ could improve the sinterbility of material very much while not so much.oxygen sensing material suitable for relative low temperature firing.

• 한국진공학회지
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• 제12권S1호
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• pp.83-87
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• 2003

Zirconium oxide films have been synthesized by radio-frequency magnetron sputtering deposition on n-Si(001) substrate with metal zirconium target at variant $O_2$ partial pressures. The influences of $O_2$ partial pressures of the morphology, deposition rate, microstructure, and the dielectric constant of $ZrO_2$ have been discussed. The results show that deposition rate of $ZrO_2$ films decreases, the roughness, and the thickness of the native $SiO_2$ interlayer increases with the increase of $O_2$ partial pressure. $ZrO_2$ films synthesized at low $O_2$ partial pressure are amorphous and monoclinic polycrystalline in nanometer scale at low $O_2$ partial pressure. The relative dielectrics of $ZrO_2$ films are in the range of 12 to 25.

• 방사성폐기물학회지
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• 제14권3호
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• pp.211-221
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• 2016

파이로 공정에서 발생되는 염폐기물은 휘발성이 높아 고온공정에 적용하기 어려우며, 폐기물내에 존재하는 염소로 인해, 전통적인 유리매질에 대한 상용성이 낮은 특성을 가지고 있어, 새로운 고화방법이 필요하다. KAERI에서는 탈염소화법을 이용하여 염소를 탈리하고, 일반적인 유리매질에 고화하는 연구방법을 제안하였다. 본 연구에서는 기존의 탈염소화법에 사용된 합성무기복합체(SAP, $SiO_2-Al_2O_3-P_2O_5$)에 첨가물로서, $Fe_2O_3$ 및 $B_2O_3$를 부가하여 5성분계의 복합체를 제조하고, 조성에 따른 탈염소화반응 및 고화체의 특성을 조사하였다. 탈염소화 반응은 조성에 따른 생성물의 변화 경향은 크지 않았으며, 유사한 반응메커니즘으로 주어진 시간 내에 반응이 진행되는 것으로 나타났다. Si-rich phase와 P-rich phase를 화학적으로 연결시켜주는 $Al_2O_3$와 $B_2O_3$의 함량이 높은 경우에는 고화체내 상분리의 정도는 상대적으로 낮게 나타나며, 구성원소의 분포가 보다 균일한 형태를 보였다. PCT-A 침출시험법을 통한 조성에 따른 내구성의 평가결과, 기준조성을 벗어나는 경우에는 내침출성이 낮게 나타났으나, EA glass(Environmental Assessment glass)의 값보다는 우수한 것으로 확인되었다. 이상의 결과로 부터, 주어진 적정 Si와 P의 조성분율하에서, Al과 B의 함량변화는 고화체의 미세구조와 내침출성에 영향을 주는 것을 확인할 수 있었으며, 미세구조와 내침출성의 연관관계에 대한 추가적인 연구가 필요할 것으로 판단된다.

• 한국세라믹학회지
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• 제29권11호
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• pp.877-887
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• 1992

Tetragonal zirconia powder with 3 mol% Y2O3 mas mixed with up to 30 vol% of ${\beta}$-SiC powders, and the mixtures were hot-pressed at 1500$^{\circ}C$ for 60 min under a pressure of 30 MPa in Ar atmosphere. Flexural strength and fracture toughness were measured at room-and high-temperature (1000$^{\circ}C$). Evolution of microstructure was also conducted to investigate the effects of SiC addition on the properties of 3Y-TZP ceramics. Average grain size of the composites was about 0.5 $\mu\textrm{m}$, and decreased with SiC addition. Both room- and high-temperature mechanical properties of the composites were improved with SiC content. Particularly, high-temperature strength and fracture toughness of 3Y-TZP/30v/o SiC composite were twice as high as those of 3Y-TZP. The hardness of the composites also increased with SiC content and reached maximum value at 3Y-TZP/30v/o SiC composite.

• 한국결정성장학회지
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• 제7권1호
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• pp.18-26
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• 1997

소결조제로 Y 3Alo012를 첨가한 {3- SiC 분말에 seed로서 1 wt%의 a- SiC 분말을 첨 가한 시편과 첨가하지 않은 시편을 1950$^{\circ}$C, argon 분위기에서 0.5~4시간 동안 소결하였다. S Seed로써 1 wt% a-SiC 분말의 첨가는 소결 도중에 길게 자란 업자틀의 성장을 가속시켰고, a a- SiC seed를 첨가한 시편에서 더 조대한 미세구조가 얻어졌다 .. a-SiC seed를 첨가하여 4시간 동안 소결한 시편의 파괴인성은 7.5 MPa'ml/2이었고, seed를 첨가하지 않은 시편의 파괴인성은 6 6.1 MPa'm1/2이었다 .. Seed를 첨가한 시편의 높은 파괴인성은 조대한 미세구조에 포함된 길게 자란 입자들에 의한 균열가교 기구의 활발한 작용에 기인한다.

• 한국진공학회지
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• 제6권S1호
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• pp.75-79
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• 1997

Optical and mechanical characteristics of $TiO-2, ZrO_2 \;and\; SiO_xN_y$ thin films prepared by ion assisted deposition (IAD) were investigated. IAD films were bombarded by Ar or nitrogen ion beam from a Kaufman ion source while they were grown in as e-beam evaporator. The result shows that the Ae IAD increases the refractive index and packing density of $TiO_2 films close to those of the bulk. For $ZrO_2$ films the Ar IAD increases the average refractive index decreases the negative inhomogeneity of refractive index and reverses to the positive inhomogeneity. The optical properties result from improved packing density and denser outer layer next to air The Ar-ion bombardment also induces the changes in microstructure of $ZrO_2$ films such as the preferred (111) orientation of cubic phase increase in compressive stress and reduction of surface roughness. Inhomogeneous refractive index SiOxNy films were also prepared by nitrogen IAD and variable refractive index of $SiO_xN_y$ film was applied to fabricate a rugate filter.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.553-555
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• 1987

In the standard system of low voltage-oriented ZnO varistor,a small amount of $Sb_2O_3$ was added to improve the nonlinear exponent and then to find the variation of breakdown characteristics, 0.1m/o-SiO and 0.1m/o-$TiO_2$, respectively,were added We considered relationship between the breakdown voltage of systems and the microstructure. We found that the system containing 0.1m/o-$Sb_2O_3$ showed very high nonlinear exponent. And we found that SiO enhanced breakdown voltage and $TiO_2$ lowered it.

• 한국세라믹학회지
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• 제29권7호
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• pp.511-516
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• 1992

In this study, SiC powder and Si powder were used as the raw materials. Mixture was prepared with addition of Al2O3 and Fe2O3 at 0.1~0.5wt% respectively. After this step, the mixture was pressed and nitrided for 30 hrs at 140$0^{\circ}C$ under NH3-N2 atmosphere. Mechanical properties of sintered specimens were investigated from measurement of porosity, bulk density and three point bending test. nitration reaction extent was observed at the change of mass before and after reaction, and the microstructure and the change of $\alpha$-Si3N4 and $\beta$-Si3N4 were observed by XRD and SEM. In the current work, the results are as follows 1. When Fe2O3 added, the nitridation increased with the content of Fe2O3, and the bending strength was increased from 0.1 wt% to 0.3 wt%, and decreased to 0.5 wt%. 2. When Al2O3 added, the nitridation and the bending strength increased little by little with the content of Al2O3 3. The bending strength of the specimen added with Fe2O3 were higher than that with Al2O3. Because the specimens contained Fe2O3 had much more the whisker type crystal of Si3N4 contributing to strength than contained Al2O3.