• Electrical & Electronic Materials
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• v.9 no.10
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• Journal of the Korean Ceramic Society
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• v.27 no.7
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• pp.925-933
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• 1990

The possible use of bioglass,, which is one of the surface active biomaterials, as implants materials has drawn great attention due to their ability to bond to human living tissue. In the present work, the investigation was carried out to find the bonding phenomena between alumina substrate and bioglass(45S5) or fluorine-containing bioglass(45S5$.$4F), and the properties of coated bioglass. The stable bonding between alumina and bioglass was formed when heat-treated at 1150$^{\circ}C$ for 120 minutes or at 1250$^{\circ}C$ for 30 minutes for the 45S5, and at 1150$^{\circ}C$ for 30 minutes for the 45S5$.$4F. When bioglass coated alumina was heat-treated, great amount of Al was diffused into bioglass from alumina substrate. More Al was diffused into fluorine-containing bioglass than into bioglass without fluorine. At early stage of heat-tretment, the diffused alumina content was increased with the square root of time and it was also increased with the thickness of coating layer and heat-treatment temperatures. The alumina content became constant after its saturation for longer heat-treatment time. Coated bioglasses were crystallized to Na2O$.$CaO$.$3SiO2 when heat-treated at lower temperature, and to CaO$.$SiO2 at higher temperature.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.335-337
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• 1995

In this study, $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ stock solution was made and spin-coated on the $Pt/SiO_2/Si$ substrate at 4000[rpm] for 30[sec]. Coated specimens were dried at 400[$^{\circ}C$] for 10 [min]. The coating process was repeated 4 times and then heat-treated at 500$\sim$800[$^{\circ}C$], 1 hour. The final thickness of the thin films were about 3000[A]. The crystallinity and microstructure of the thin films were investigated for varing the sintering condition. The ferroelectric perovskite' phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hours. In the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films sintered at 700[$^{\circ}C$] for 1 hour, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitors having good dielectric and electrical properties are expected for the application to the dielectric material of DRAM.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.521-524
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• 1999

Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

• Proceedings of the KAIS Fall Conference
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• 2009.05a
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• pp.878-881
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• 2009

본 연구는 건축자재로 널리 사용되는 PVC 바닥상재의 표면을 스크래치로부터 보호하기 위하여 기존에 사용하는 광경화형 우레탄-아크릴 수지에 내마모성을 향상시킨 광경화형 하드 코팅액 개발에 관한 것이다. PVC 바닥상재용으로 사용되는 내마모성이 없는 우레탄-아크릴 수지에 $Al_2O_3$(Al-160SG-3), $Al_2(OH)_3$(SH-8W) 및 $SiO_2$(KS-5000) 등 서로 다른 내마모성을 지닌 물질을 분말 형태로 수지의 양대비 함량(wt%)을 10~30%로 변화하여 첨가한 후 링밀(Ring Mill)을 사용, 배합하여 수지의 내마모성을 향상시킨 하드 코팅액을 제조하였다. 제조한 하드 코팅액은 코팅층의 두께조절이 가능한 코팅(Bar-coating)을 사용하여 PVC 바닥상재에 코팅 한 후 내마모성, 연필경도, 부착력, 코팅두께 등의 코팅층 표면물성을 평가하였다. 연구결과, 수지에 $Al_2O_3$ 분말 30%를 혼합하여 제조한 하드 코팅액이 내마모성 1등급, 연필경도 H, 부착력 100%로 가장 좋은 물성을 보였으며, 전반적으로 입자크기가 작고, 분말 함량이 많을수록 또한 코팅두께가 두꺼워 질수록 경도 및 내마모성이 우수한 것으로 나타났다.

• Journal of Ocean Engineering and Technology
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• v.23 no.5
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• pp.85-91
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• 2009

A stainless steel that contains aggressive negative ion was known to decrease the corrosion resistance. Stainless steel with super corrosion resistance was developed for improvement of corrosion resistance. Super duplex stainless steel is widely used under sever environment because of good mechanical properties and corrosion resistance. Also, Super duplex stainless steel has long life in severe environments by showing the enough strength and corrosion resistance. But duplex stainless steel is not stabilized compared to austenite stainless steel in corrosion resistance. In this study, corrosion characteristic were investigated to super duplex stainless steel with additive 0.2% nitrogen with $SiO_2$ thin films coated or no coated by sol-gel method in 3.5% NaCl. From test results, corrosion current density in the heat-treated specimen for ${\sigma}$ phase precipitation was higher than that of different heat-treated specimen. Also, $SiO_2$ colloidal-coated specimen had not occurred almost corrosion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.168-169
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• 2005

실온에서 디스플레이 응용을 위하여 ICP CVD로 PET기판 위에 실리콘 산화 반사 방지막을 성장시키고, EDXA로 분석하였다. 분광 Ellipsometer, UV-V와 FTIR분광기를 이용하여 반사율을 3%이하까지 낮출 수 있다는 것을 확인하였고, SEM장비를 이용하여 표면 상태를 알아보았으며. Essential Macleod 광학디자인 프로그램을 이용한 시뮬레이션 결과와 일치함을 확인하였다. 본 연구결과를 이용하면 다층박막 대신 단층 반사방지막을 제작하여 경제적이고, 효과적인 반사방지막을 제작할 수 있다.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.418-423
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• 2014

Fully ceramic micro encapsulated (FCM) nuclear fuel is a concept recently proposed for enhancing the stability of nuclear fuel. FCM nuclear fuel consists of tristructural-isotropic (TRISO) fuel particles within a SiC matrix. Each TRISO fuel particle is composed of a $UO_2$ kernel and a PyC/SiC/PyC tri-layer which protects the kernel. The SiC ceramic matrix is created by sintering. In this FCM fuel concept, fission products are protected twice, by the TRISO coating layer and by the SiC ceramic. The SiC ceramic has proven attractive for fuel applications owing to its low neutron-absorption cross-section, excellent irradiation resistivity, and high thermal conductivity. In this study, a SiC-matrix composite containing TRISO particles was sintered by hot pressing with $Al_2O_3-Y_2O_3$ additive system. Various sintering conditions were investigated to obtain a relative density greater than 95%. The internal distribution of TRISO particles within the SiC-matrix composite was observed using an x-ray radiograph. The fracture of the TRISO particles was investigated by means of analysis of the cross-section of the SiC-matrix composite.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• The International Journal of Costume Culture
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• v.8 no.2
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• pp.124-131
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• 2005

This study focused on the change of skin temperature by the emissivity and emission power of far-infrared for conformant far infrared effect to naked eyes. The study method is to manufacture the bra pad by each concentration on far-infrared materials of illite powder $(K,H_3O)AI_2(Si,Al)_4O_{10}(H_2O,OH)_2)$, liquid alumina ($Al_2O_3$), the extracted liquid from 29 kind of medical plants, then, measured change of skin temperature. Result are as follows. Far-infrared were emitted each $90.2\%,\;90.1\%,\;89.7\%$ from the illite powder, liquid alumina, extracted liquid from medical plants. When the testee weared the bra pad, the temperature of coated bra pad was $0.5^{\circ}C$ higher than the non finished bra pad. Washing fastness on far-infrared finishing was better dope addition method than coating method.