• 제목/요약/키워드: $SiO_2$ coating

검색결과 650건 처리시간 0.498초

유/무기하이브리드 코팅액에 의한 Al6061-T6의 내식 특성 (Corrosion Resistance of Al6061-T6 by Organic/Inorganic Hybrid Coating Solution)

  • 박미향;신기항;최병철;안병현;이금화;남기우
    • 한국산업융합학회 논문집
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    • 제26권4_2호
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    • pp.591-598
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    • 2023
  • In this study, the corrosion resistance by salt spray was evaluated using A6061-T6 for an electric vehicle battery pack case coated with an organic/inorganic hybrid solution. The lowest curing temperature of 190 ℃ resulted in significant corrosion and pitting. Meanwhile, no corrosion was observed in the coated specimens at 210 ℃ and 230 ℃ except at 210 ℃ - 6 min and 8 min. The surface of the as-received coating specimen observed by FE-SEM exhibited streaks and dents in the rolling direction, but the coating surface was clean. On the 190 ℃ - 6 min coating specimen, which had a lot of corrosion, rolling streaks spread, and dents were caused by corrosion. The 200 ℃ - 12 min coating specimen did not show corrosion, but it showed an etched surface. In the line profile, Si, the main component of the coating solution, was detected the most, and Ti was also detected. In the coating specimens with salt spray, O increased and Si decreased, regardless of corrosion. The peeling rate by adhesion evaluation was 26 - 87% for the 190 ℃ coating specimen, 4 - 83% for the 210 ℃ coating specimen, and 94 - 100% for the 230 ℃ coating specimen. The optimal curing conditions for the coating solution used in this study were 210 ℃ for 10 min.

패턴 된 기판 위에 형성된 메조포러스 $TiO_2$막 형성 기구 및 미세구조 연구

  • 안흥배;남우현;이정용;김영헌
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.469-469
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    • 2011
  • 고효율 염료감응형 태양전지(DSSC, Dye-Sensitized Solar Cell)의 구현을 위해서 유용한 방법중 하나는 정렬된 기공 (pore)을 $TiO_2$막 내에 형성시키는 것이다. 메조포러스 (mesoporous) $TiO_2$막은 dip coating이나 spin coating과 같은 방법으로 주로 증착되고 있으며, P123이나 F127과 같은 amphiphilic triblock copolymer를 메조포러스 구조를 만들기 위한 뼈대로 사용하고 있다. 또한, 이렇게 생성된 구조에서 amphiphilic triblock copolymer는 열처리 공정을 통하여 쉽게 제거될 수 있다. 고효율 태양전지를 구현하는 또 다른 방법으로는 패턴 된 기판을 사용하는 것이다. 패턴 된 기판은 빛의 반사를 억제하여 흡수율을 높이는 역할을 한다. 그러나 패턴 된 기판 위에서 메조포러스 $TiO_2$막의 형성에 관한 연구는 부족한 실정이다. 본 연구에서는 spin coating 방법으로 패턴 된 Si (111) 기판 위에 메조포러스 $TiO_2$를 성장하고 그 미세구조를 분석하였다. 패턴 된 기판은 nanosphere lithography(NSL) 법으로 mask를 증착한 후 건식 식각 (dry etching) 공정을 통해서 제작되었으며, 마스크와 불순물 등 은 초음파 세척 등으로 제거되었다. 메조포러스 $TiO_2$막은 1-propanol, P123, titanium isopropoxide와 HCl을 섞어 만든 용액으로 1 cm${\times}$1 cm 기판 위에 3000 rpm과 4000 rpm으로 각각 증착하였으며, 5일 동안 4도에서 에이징한 후 350도에서 3시간 열처리하였다. 이렇게 형성한 메조포러스 막의 형상과 미세구조적 특성이 주사전자현미경(SEM, scanning electron microscope), X-선 회절(XRD, X-ray diffraction) 등을 이용하여 연구되었다. 특히, 증착 조건에 따른 메조포러스 $TiO_2$박막의 형성 기구에 관한 고찰이 진행되었다. 나아가, $TiO_2$박막과 패턴 사이에 형성되는 계면 구조에 관한 연구를 투과전자현미경을 이용하여 진행하였다.

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구형 단분산 실리카 분말을 이용한 SiOx 음극활물질 제조 및 형상조절 기술 (Fabrication of SiOx Anode Active Materials Using Spherical Silica Powder and Shape Control Technology)

  • 권주찬;오복현;이상진
    • 한국재료학회지
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    • 제33권12호
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    • pp.530-536
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    • 2023
  • The theoretical capacity of silicon-based anode materials is more than 10 times higher than the capacity of graphite, so silicon can be used as an alternative to graphite anode materials. However, silicon has a much higher contraction and expansion rate due to lithiation of the anode material during the charge and discharge processes, compared to graphite anode materials, resulting in the pulverization of silicon particles during repeated charge and discharge. To compensate for the above issues, there is a growing interest in SiOx materials with a silica or carbon coating to minimize the expansion of the silicon. In this study, spherical silica (SiO2) was synthesized using TEOS as a starting material for the fabrication of such SiOx through heating in a reduction atmosphere. SiOx powder was produced by adding PVA as a carbon source and inducing the reduction of silica by the carbothermal reduction method. The ratio of TEOS to distilled water, the stirring time, and the amount of PVA added were adjusted to induce size and morphology, resulting in uniform nanosized spherical silica particles. For the reduction of the spherical monodisperse silica particles, a nitrogen gas atmosphere mixed with 5 % hydrogen was applied, and oxygen atoms in the silica were selectively removed by the carbothermal reduction method. The produced SiOx powder was characterized by FE-SEM to examine the morphology and size changes of the particles, and XPS and FT-IR were used to examine the x value (O/Si ratio) of the synthesized SiOx.

Synthesis of Fe/SiO2 Core-Shell Nanoparticles by a Reverse Micelle and Sol-Gel Processes

  • Son, Jeong-Hun;Bae, Dong-Sik
    • 한국재료학회지
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    • 제22권6호
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    • pp.298-302
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    • 2012
  • Fe/$SiO_2$ core-shell type composite nanoparticles have been synthesized using a reverse micelle process combined with metal alkoxide hydrolysis and condensation. Nano-sized $SiO_2$ composite particles with a core-shell structure were prepared by arrested precipitation of Fe clusters in reverse micelles, followed by hydrolysis and condensation of organometallic precursors in micro-emulsion matrices. Microstructural and chemical analyses of Fe/$SiO_2$ core-shell type composite nanoparticles were carried out by TEM and EDS. The size of the particles and the thickness of the coating could be controlled by manipulating the relative rates of the hydrolysis and condensation reaction of TEOS within the micro-emulsion. The water/surfactant molar ratio influenced the Fe particle distribution of the core-shell composite particles, and the distribution of Fe particles was broadened as R increased. The particle size of Fe increased linearly with increasing $FeNO_3$ solution concentration. The average size of the cluster was found to depend on the micelle size, the nature of the solvent, and the concentration of the reagent. The average size of synthesized Fe/$SiO_2$ core-shell type composite nanoparticles was in a range of 10-30 nm and Fe particles were 1.5-7 nm in size. The effects of synthesis parameters, such as the molar ratio of water to TEOS and the molar ratio of water to surfactant, are discussed.

롤투롤시스템을 이용하여 PET 필름위에 제조된 SiO2-ITO 박막의 색도(b*), 면저항과 투과도 연구 (Chromaticity(b*), Sheet Resistance and Transmittance of SiO2-ITO Thin Films Deposited on PET Film by Using Roll-to-Roll Sputter System)

  • 박미영;김정수;강보갑;김혜영;김후식;임우택;최식영
    • 한국재료학회지
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    • 제21권5호
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    • pp.255-262
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    • 2011
  • This paper has relatively high technical standard and experimental skill. The fabrication of TCO film with high transparency, low resistance and low chromaticity require exact control of several competing factors. This paper has resolved these problems reasonably well, thus recommended for publication. Indium tin oxide(ITO) thin films were by D.C. magnetron roll-to-roll sputter system utilizing ITO and $SiO_2$ targets of ITO and $SiO_2$. In this experiment, the effect of D.C. power, winding speed, and oxygen flow rate on electrical and optical properties of ITO thin films were investigated from the view point of sheet resistance, transmittance, and chromaticity($b^*$). The deposition of $SiO_2$ was performed with RF power of 400W, Ar gas of 50 sccm and the deposition of ITO, DC power of 600W, Ar gas of 50 sccm, $O^2$ gas of 0.2 sccm, and winding speed of 0.56m/min. High quality ITO thin films without $SiO_2$ layer had chromaticity of 2.87, sheet resistivity of 400 ohm/square, and transmittance of 88% and $SiO_2$-doped ITO Thin film with chromaticity of 2.01, sheet resistivity of 709 ohm/square, and transmittance of more than 90% were obtained. As a result, $SiO_2$ was coated on PET before deposition of ITO, their chromaticity($b^*$) and transmittance were better than previous results of ITO films. These results show that coating of $SiO_2$ induced arising chromaticity($b^*$) and transmittance. If the thickness of $SiO_2$ is controlled, sheet resistance value of ITO film will be expected to be better for touch screen. A four point probe and spectrophotometer are used to investigate the properties of ITO thin films.

Enhancement of Electrical Properties on ZnO: Al Thin Film due to Hydrogen Annealing and SiO2 Coating in Damp-heat Environment

  • Chen, Hao;Jeong, Yun-Hwan;Park, Choon-Bae
    • Transactions on Electrical and Electronic Materials
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    • 제10권2호
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    • pp.58-61
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    • 2009
  • The electrical stability of ZnO: Al thin films deposited on glass substrate by the RF magnetron sputtering method have been modified by a hydrogen annealing treatment and $SiO_2$ protection layer. AZO thin films were deposited at room temperature and different RF powers of 50, 100, 150, and 200 W to optimize the AZO film growth condition. The lowest value of resistivity of $9.44{\times}10^{-4}{\Omega}cm$ was obtained at 2 mtorr, room temperature, and a power level of 150 W. Then, the AZO thin films were annealed at $250-400^{\circ}C$ for 1 h in hydrogen ambient. The minimum resistivity obtained was $8.32{\times}10^{-4}{\Omega}cm$ as-annealed at $300^{\circ}C$. The electrical properties were enhanced by the hydrogen annealing treatment. After a 72 h damp-heat treatment in harsh conditions of a water steam at $110^{\circ}C$ for four representative samples, a degradation of electrical properties was observed. The sample of hydrogen-annealed AZO thin films with $SiO_2$ protection layer showed a slight degradation ratio(17%) of electrical properties and a preferable transmittance of 90%. The electrical stability of AZO thin films had been modified by hydrogen annealing treatment and $SiO_2$ protection layer.

$PbTiO_3$ 씨앗층을 이용한 $Pb(Mg_{1/3}Ta_{2/3})O_3$ 박막의 상안정화와 전기적 특성평가 (Stabilization of $Pb(Mg_{1/3}Ta_{2/3})O_3$ thin film by a thin $PbTiO_3$ seed layer and characterization of electric properties)

  • 김태언;유창준;문종하;김진혁
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.211-211
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    • 2003
  • PbTiO$_3$ 씨앗층을 이용하여 완화형 강유전체 Pb(Mg$_{1}$3/Ta$_{2}$3/)O$_3$ (PMT) 박막의 페로브스카이트 상안정화와 열처리 조건에 따른 미세구조변화, 이에 따른 전기적 특성 변화에 관하여 조사하였다. PbTiO$_3$ 박막을 스핀코팅법으로 3000 rpm에서 20초간(111) 방향으로 배향된 Pt / Ti / SiO$_2$/ Si 기판에 증착하여 안정화된 페로브스카이트 박막을 얻었다. 이렇게 제조된 PbTiO$_3$를 Buffer 층으로 사용하고 그 위에 Pb(Mg$_{1}$3/Ta$_{2}$3/)O$_3$를 박막을 Spin coating방법으로 증착한 후, 급속열처리 방법(RTA)으로 550- $650^{\circ}C$ 사이에서 열처리하였다. 제조된 박막의 열처리 온도에 따른 미세구조 변화와 결정성을 XRD, SEM, TEM으로 분석하였고 박막의 저온 강유전 특성을 RT66A를 이용하여 평가하였다. Pb(Mg$_{1}$3/Ta$_{2}$3/)O$_3$ 박막의 경우 씨앗층이 없는 경우에는 pyrochlore상이 주상이었지만 씨앗층을 사용한 경우 페로브스카이트 상이 주상임을 확인하였고 열처리 온도가 증가할수록 페로브스카이트상의 상대적 양이 증가함을 확인하였다. 미세구조와 상의 변화에 따른 전기적 특성 변화에 관하여 자세하게 논의할 것이다.

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Synthesis of ZrTiO4 and Ta2Zr6O17 Films by Composition-Combinatorial Approach through Surface Sol-Gel Method and Their Dielectric Properties

  • Kim, Chy-Hyung
    • Bulletin of the Korean Chemical Society
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    • 제28권9호
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    • pp.1463-1466
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    • 2007
  • Single phases of multi-component oxides films, ZrTiO4 and Ta2Zr6O17, could be synthesized by using the combinatorial approach through surface sol-gel route, coating the appropriate mole ratio of 100 mM zirconium butoxide, tantalum butoxide and titanium butoxide precursors on Pt/Ti/SiO2/Si (100) substrate, following pyrolysis at 450 oC, and annealing them at 770 oC. Both the films and bulks of ZrTiO4 and Ta2Zr6O17 showed very stable dielectric properties in temperature range, ?140 to 60 oC, and frequency range, 100 Hz to 1 MHz, promising their applications in wide range of temperatures and frequencies. The dielectric constants of the films were lower and a little more dependent on frequency than those of the bulks. The reduction of dielectric property in the film was mainly due to the interfacial effects that worked as series and parallel-connected capacitances toward the substantial film capacitance.

Electrical Properties of Sol-gel Derived Ferroelectric Bi3.35Sm0.65Ti3O12 Thin Films by Rapid Thermal Annealing

  • Cho, Tae-Jin;Kang, Dong-Kyun;Kim, Byong-Ho
    • Transactions on Electrical and Electronic Materials
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    • 제6권2호
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    • pp.51-56
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    • 2005
  • Ferroelectric Bi$_{3.35}$Sm$_{0.65}$Ti$_{3}$O$_{12}$(BSmT) thin films were synthesized using a sol-gel process. Bi(TMHD)$_{3}$, Sm$_{5}$(O$^{i}$Pr)13, Ti(O$^{i}$Pr)4 were used as the precursors, which were dissolved in 2­methoxyethanol. The BSmT thin films were deposited on Pt/TiO$_{x}$/SiO$_{2}$/Si substrates by spin­coating. The electrical properties of the thin films were enhanced using rapid thermal annealing process (RTA) at 600 $^{circ}$C for 1 min in O$_{2}$. Thereafter, the thin films were annealed from 600 to 720 $^{circ}$C in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BSmT thin films annealed at 720 $^{circ}$C after the RTA treatment was 35.31 $\mu$C/cmz at an applied voltage of 5 V.

유기용매 사용 감소를 위한 건식 기계 장치를 이용한 NH2-HNT 제조의 조건 변화와 스케일업 (Production of NH2-HNT Using Organic Solvent Reducing Dry Mechanical Device with Different Conditions and with Scale Up Settings)

  • 김문일
    • 한국산업융합학회 논문집
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    • 제27권2_2호
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    • pp.357-361
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    • 2024
  • Halloysite nanotube (HNT) has a nanotube structure with the chemical formula of Al2Si2O5(OH)4·nH2O and is a natural sediment of aluminosilicate. HNT has been used as additive to improve the mechanical properties of epoxy composites with exchange of amine group as a terminal functional group using huge amount of organic solvents. In order to save time and simplify complicated procedures, a dry coating machine was designed and used for amine group exchange in previous research. For better applications, it was conducted with different parameters and with scale up settings. Best condition was found to reduce usage of solvent, time and man power.