• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.865-868
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• 2005

We fabricated the $Pb_{0.72}La_{0.28}TiO_3 (PLT(28))$ thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Electrical properties of PLT(28) thin film were measured through formation on the Pt/Ti/SiO$_2$/Si substrate and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}$A/cm$^2$, respectively

• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.410-416
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• 2015

Recently, a new $Y_2O_3$ coating deposited using the EB-PVD method has been developed for erosion resistant applications in fluorocarbon plasma environments. In this study, surface crack formation in the $Y_2O_3$ coating has been analyzed in terms of residual stress and elastic modulus. The coating, deposited on silicon substrate at temperatures higher than $600^{\circ}C$, showed itself to be sound, without surface cracks. When the residual stress of the coating was measured using the Stoney formula, it was found to be considerably lower than the value calculated using the elastic modulus and thermal expansion coefficient of bulk $Y_2O_3$. In addition, amorphous $SiO_2$ and crystalline $Al_2O_3$ coatings were similarly prepared and their residual stresses were compared to the calculated values. From nano-indentation measurement, the elastic modulus of the $Y_2O_3$ coating in the direction parallel to the coating surface was found to be lower than that in the normal direction. The lower modulus in the parallel direction was confirmed independently using the load-deflection curves of a micro-cantilever made of $Y_2O_3$ coating and from the average residual stress-temperature curve of the coated sample. The elastic modulus in these experiments was around 33 ~ 35 GPa, which is much lower than that of a sintered bulk sample. Thus, this low elastic modulus, which may come from the columnar feather-like structure of the coating, contributed to decreasing the average residual tensile stress. Finally, in terms of toughness and thermal cycling stability, the implications of the lowered elastic modulus are discussed.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.40-44
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• 2017

The effect of weak dielectric silicone dioxide($SiO_2$) embedded in polyfluorene(PFO) emitting layer of polymer-based multi structure OLED was investigated. Indium tin oxide(ITO)/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/poly(9,9-di-n-octylfluorenyl-2,7-diyl)(PFO)/2,2,2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)/aluminum(Al) structure OLED was fabricated by spin-coating method. Applied electric field causes some effect on $SiO_2$ in PFO layer. Thus, interaction between polymers and affected $SiO_2$ might generate electrical and luminance properties change. Experimental results, show the reduced threshold voltage of 6 V(from 23 V to 17 V). The maximum current density was rather increased from $71A/m^2$ to $610A/m^2$ and maximum brightness was also increased from $7.19cd/m^2$ to $41.03cd/m^2$, 9 and 6 times each. Additionally we obtained colour broadening result due to the increasing of blue-green band emission. Consequently we observed that electrical and luminance properties are enhanced by adding $SiO_2$ and identified the possibility of controlling the emission colour of OLED device according to colour broadening.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.119-119
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• 2003

탄화규소나 열분해 탄소는 고온 특성 및 화학적인 안정성 이 우수하여 단미 혹은 코팅재로로 소재의 성능을 향상시키기 위하여 에너지 관련 분야, 반도체 치구 분야, 방위산업 및 항공우주 분야와 원자력 분야에서 다양하게 사용된다. 특히 원자력 분야에서는 고온형 원자로의 노심 요소 부품으로 적용 및 개발을 고려하고 있으며, 대표적인 예로 수소생산용 초고온 가스냉각로의 코팅 핵연료 입자를 들 수 있다. 일반적으로 TRISO라 불리는 가스냉각로 핵연료는 구형 $UO_2$ kemel의 주변을 PyC-SiC -PyC의 삼중 코팅층으로 둘러싸는 구조를 하고 있으며, 이 코팅층들은 kernel물질이 분열하는 동안 발생되는 내부 기체 압력을 견디는 압력용기 역할과 기체나 금속 핵분열 생성물들을 가두는 확산 장벽 역할을 하게 된다. 본 연구에서는 구형의 $UO_2$대신 선행연구를 위하여 구형 ZrO$_2$를 이용하여 증착온도나 시간 및 입력기체비 등의 화학증착 변수로 조절하여 SiC 및 PyC을 코팅하고, 각 변수들에 의한 증착층의 거동을 고찰하고자 하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.75-76
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• 2007

ZnS:Cu,Cl phosphor was coated by solid-gel reaction with $SiO_2$ outside layer. The effect of $Cu^{2+}$-doping concentration has been investigated on the luminescence characteristics of ZnS:Cu,Cl blue-green phosphors for inorganic electro luminescent device. Also, SiO2 coated layers' effect on luminescence characteristics. Evaluation of luminescence characteristics dependent on the synthesis conditions is important to get high-performance phosphors properties. EL and PL properties such as luminescence intensity and chromaticity of ZnS:Cu,Cl phosphors synthesized with different concentration of activator, $Cu^{2+}$, were analysed separately

• Korean Journal of Optics and Photonics
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• v.2 no.3
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• pp.149-152
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• 1991

We report a new method of fabricating a Ti:LiNb03 waveguide with no out-diffusion by coating the waveguide with $SiO_2$ thin film. It was coated before diffusion process, and the $LiO_2$ out-diffusion was prevented in the diffusion process. We compare the near field patterns of the guided modes between the typical waveguide and the waveguide fabricated by new method proposed here.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3723-3729
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• 2010

We investigated the high-excitation voltage cathodoluminescence (CL) performance of blue light-emitting (ZnS:Ag,Al,Cl) and green light-emitting (ZnS:Cu,Al) phosphors coated with metal oxides ($SiO_2$, $Al_2O_3$, and MgO). Hydrolysis of the metal oxide precursors tetraethoxysilane, aluminum isopropoxide, and magnesium nitrate, with subsequent heat annealing at $400^{\circ}C$, produced $SiO_2$ nanoparticles, an $Al_2O_3$ thin film, and MgO scale-type film, respectively, on the surface of the phosphors. Effects of the phosphor surface coatings on CL intensities and aging behavior of the phosphors were assessed using an accelerating voltage of 12 kV. The MgO thick film coverage exhibited less reduction in initial CL intensity and was most effective in improving aging degradation. Phosphors treated with a low concentration of magnesium nitrate maintained their initial CL intensities without aging degradation for 2000 s. In contrast, the $SiO_2$ and the $Al_2O_3$ coverages were ineffective in improving aging degradation.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.76-80
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• 1997

'4 NiAl coating process was applied on 316 stainless steel to retard the corrosion of the wet- seal area of separator for the molten carbonate fuel cell. The Nit11 phasc on the stainless steel substrate could be formed by pre-coating with Ni, plated with A1 and ther, heat treated at $800^{\circ}C$ for 3 hr in $H_2/N_2$ gas atmosphere. The corrosion protection behavior of YiAl coating layer was stuilied under immersion condition in molten cxhonate salt($62^{m}/_{o}Li_2CO_3-38^{m}/_{o}/K_{2}CO_{3}$) at $650^{\circ}C$. The NiAl coating layer ticposited on the AiSi 316 stainless steel had high corrosion resistance in molten carbor. dte salt. The corrosion resistance of XiAl (~~jpoared to be associated with the .A1 oxide formed on the surface of coating layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.582-585
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• 2004

Pb0.5Sr0.5TiO3 (PST) thin films were fabricated by the alkoxide-based sol-gel process using spin-coating method on Pt/Ti/SiO2/Si substrate. The PST films annealed from 500C to 650C for 1h show a perovskite phase and dense microstructure with a smooth surface. The grain size and dielectric constant of PST films increases with the increase in annealing temperature, which reduces the SiO2 equivalent thickness of the PST film. The crystallinity or internal strain in the PST thin films analyzed from the diffraction-peak widths correlate well with the decrease in the dielectric losses. The dielectric constants and dielectric loss (%) of the PST films annealed at 650c (teq : 0.89 nm) were 549 and 0.21%, respectively.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.211-217
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• 2008

A $ZrO_2$ coating solution containing $ZrO_2$ photo-catalysis, which is transparent in visible light, was prepared by the hydrolysis of alkoxide, and thin films on the $SiO_2$ glass substrate were formed in a dipcoating method. These thin films were heat-treated at temperatures ranging from $250^{\circ}C-800^{\circ}C$ and their characteristics were subjected to thermal analysis, XRD, spectrometry, SEM, EDS, contact angle measurement, and AFM. Tetragonal $ZrO_2$ phase was found in the thin film heat treated at $450^{\circ}C$, and anatase $TiO_2$ phase was detected in the thin film heat-treated at $600^{\circ}C$ and above. The thickness of the films was approximately 300 nm, and the roughness was 0.66 nm. Thus, the film properties are excellent. The films are super hydrophilic with a contact angle of $4.0^{\circ}$; moreover, they have self-cleaning effect due to the photo catalytic property of anatase $TiO_2$.