• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.103-106
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• 2002

The applicability of models based on fractal morphology to characterize $(Ba\;Sr)TiO_{3}$ thin film surfaces was investigated. The fractal morphology of coated barium strontium titan oxide thin film surfaces was described using fractal dimension from scanning electro microscopy image. The $(Ba\;Sr)TiO_{3}$ coating were deposited on silicon wafers using $(Ba\;Sr)TiO_{3}$ solution and spin coater. BST solution was composited by mol ratio, and then spin-coated from 3 times to 5 times coating on $Pt/SiO_{2}/Si$ substrate. Qualitative thin film analysis was performed with scanning electro microscopy (SEM), and surfaces parameters such as average grain diameter, roughness exponent and fractal dimension were determined.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.465-465
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• 2013

Inorganic 물질인 SiO2 dielectric 위에 organic dielectric PVP (4-vinyphenol)를 spin coating으로 올려, inorganic/organic dielectric 형태의 double layer구조로 High-performance amorphous indiumgallium zinc oxide thin-film transistors (IGZO TFT)를 제작하여 보았다. SiO2 dielectric을 buffer layer로 80 nm, PVP는 10Wt% 400 nm로 구성하였으며, 200 nm single SiO2 dielectric과 동일한 수준의 leakage current 특성을 MIM Capacitor 구조를 통해서 확인할 수 있었다. 이 소자의 장점은 용액공정의 도입으로 공정 시간의 단축 및 원가 절감을 이룰 수 있으며, dielectric과 channel 사이의 균일한 interface의 형성으로 interface trap 개선 및 Yield 향상의 장점을 갖는다. 우리는 실험을 통해서 SiO2 buffer layer가 수직 electric field에 의한 leakage current을 제어하고, PVP dielectric은 interface를 개선하는 것을 확인하였다. Vth의 negative shift 및 slope의 향상으로 구동전압이 줄어들고, 균일한 I-V Curve 형성을 통해서 Process Yield의 향상을 확인하였다.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.423-430
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• 1997

졸-겔 dip coating법에 의해 제조한 바륨페라이트 박막의 미세구조와 결정학적인 구조 특성에 관해 조사하였다. 기판에 형성된 바륨페라이트 입자는 침상 형태의 입자들로 구성되어 있었으며, C축은 장축 방향이었고, 막 두께가 증가함에 따라 침상형 입자들은 기판에 평행하게 배향하는 경향을 나타내었다. 박막은 바륨페라이트층, Ba, Fe, SiO$_{2}$로 구성되어 있는 중간층, 그리고 기판층인 SiO$_{2}$층으로 구성되어 있었으며, 중간층과 SiO$_{2}$층간의 계면은 Ba 와 SiO$_{2}$간의 화합물로 구성되어 있었다. 침상 형태의 입자는 95$0^{\circ}C$에서 3시간 열처리하므로써 완전히 소실하였고, 130$0^{\circ}C$에서 3시간 열처리하므로써 c면이 기판에 평행하게 위치하는 완전한 육각판상 형태의 입자로 변화되었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.277-281
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• 2009

Superhydrophobic $SiO_2$ thin films were successfully fabricated on a glass substrate by sol-gel method. To fabricate $SiO_2$ thin film with a high roughness, $SiO_2$ nano particles were added into tetraethoxysilane (TEOS) solution. The prepared $SiO_2$ thin film without an addition of $SiO_2$ nano particles showed a very flat surface with ca. 1.27 nm of root mean square (RMS) roughness. Otherwise, the $SiO_2$ thin films fabricated by using coating solutions added $SiO_2$ nano particles of 1.0, 2.0 and 3.0 wt% showed a RMS roughness of ca. 44.10 nm, ca. 69.58 nm, ca. 80.66 nm, respectively. To modify the surfaces of $SiO_2$ thin films to hydrophobic surface, a hydrophobic treatment was carried out using a fluoroalkyltrimethoxysilane (FAS). The $SiO_2$ thin films with a high rough surface were changed from hydrophilic to hydrophobic surface after the FAS treatment. Especially, the prepared $SiO_2$ thin film with a RMS roughness of 80.66 nm showed a water contact angle of $163^{\circ}$.

• Journal of Power System Engineering
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• v.21 no.2
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• pp.5-13
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• 2017

This study has developed an organic/inorganic hybrid solution according to amount of $SiO_2$ polysilicate, and the amount of melamine is constant. The three types of cold rolled steel were evaluated a corrosion resistance properties by using these solutions. $US_3M_3$ and $US_{11}M_3$ solutions were generate a lot of corrosion. $US_7M_3$ solution was excellent in corrosion resistance, regardless of the steel type. The appearance of coating by $US_3M_3$ and $US_{11}M_3$ solutions were bumpy surface, and were a lot of fine defects. $US_7M_3$ solution was made a sophisticated molecular cross-linking structure inside the coating, it was a slick surface. Other characteristics are exhibited the excellent property for all solutions.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.234-236
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• 2015

$Y_2O_3$-SiC composite membrane was dip-coated using $Y_2O_3$ sol solution; this membrane was compared with a non- coated one. Each membrane was characterized by XRD, FE-SEM and BET techniques. Hydrogen and CO permeation were tested with self-manufactured Sievert's type equipment. $Y_2O_3$ coating was enhanced for the selectivity of the membrane ($H_2$ versus CO). The hydrogen permeation was measured at 1 bar with increasing temperatures. In case of the coated membrane, hydrogen permeation was found to be $1.24{\times}10^{-7}mol/m^2sPa$ with perm-selectivity of 4.26 at 323 K.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.8-14
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• 2011

To improve the chemical stability of metal, the ceramic coatings on metallic materials have attracted interest from many researchers due to the chemical inertness of ceramic materials. To endure strong acids, SiOC coating on metal substrate was carried out by dip coating method using 20wt% polyphenylcarbosilane solution; SiC powder was added to the solution at 10wt% and 15wt% to improve the mechanical properties and to prevent cracks of the film. Thermal oxidation as a curing step was carried out at $200^{\circ}C$ for crosslinking of the polyphenylcarbosilane, and the coating samples were pyrolysized at $800^{\circ}C$ under argon to convert the polyphenylcarbosilane to SiOC film. The thicknesses of the SiOC coating films were $2.36{\mu}m$ and $3.16{\mu}m$. The quantities of each element were measured as $SiO_{1.07}C_{6.33}$ by EPMA, and it can be confirmed that the SiOC film from polyphenylcarbosilane was formed in a manner that was carbon rich. The hardness of the SiOC film was found to be 3.2Gpa through nanoindentor measurement. No defect including cracks appeared in the SiOC film. The weight loss of the SiOC coated stainless steel was within 2% after soaking in 10% HCl solution at $80^{\circ}C$ for one week. From these results, SiOC coating shows good potential for application to protect against severe chemical corrosion of stainless steel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.339-342
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• 1998

Ferroelectric L $a_2$ $Ti_2$ $O_{7}$(LTO) thin films were prepared by chemical solution deposition processes. Acetylacetone was used as chelating agent and nitric acid was added in the stock solution to control hydrolysis and condensation reaction rate. The LTO thin films were spin-coated on Pt/Ti/ $SiO_2$/(100)Si and Pt/Zr $O_2$/ $SiO_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. The role of acetylacetone in Ti iso-propoxide stabilization by possibly substituting $O^{i}$Pr ligand was studied by H-NMR. B site-rich impurity phase, i.e. L $a_4$ $Ti_{9}$ $O_{24}$, was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results were compared between modified sol-gel and MOD processes.s.s.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.7
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• pp.914-918
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• 1995

In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.14-16
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• 1995

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ co-ramic thin films were formed by spin coating method on Pt/$SiO_2$/Si substrate at 4000[rpm] for 30 [sec]. Coated specimens were dried on the hot-plate at 400[$^{\circ}C$] for 10[min]. The coating process was repeated 6 times and then sintered at temperature between 500 ~ 800[$^{\circ}C$] for 1 hour. The ferroelectric perovskite phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ thin film sintered at 700[$^{\circ}C$] for 1hour showed good dielectric constant (2133) and dielectric loss (2.2[%]) Properties. The switching voltage, switching time and leakage currents density were 3.0[V], 1.7[${\mu}$sec] , 160[pA/$\textrm{cm}^2$] repectively.