• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.695-700
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• 1993

In this study, we prepared Pb-Ti stock solution by sol-gel processing and deposited PbTiO3 thin film on a Pt coated SiO2/Si wafer by spin coating using the stock solution. We used lead acetate trihydrate and titanium isopropoxide. The stock solution was partially hydrolized and finally a 0.25M coating solution was prepared. We achieved spin coating at 4000rpm for 30 seconds and heated the thin film at 375$^{\circ}C$ for 5 minutes and at $600^{\circ}C$ for 5 minutes successively, first and second heating state. And the thin film was finally sintered at 90$0^{\circ}C$ for 1 hour in the air. The upper electrode of the thin film was made by gold sputtering and was cricle shape with radius 0.4mm. Measured dielectric constant, dissipation factor and phase transition temperature(Cuire Temp.) were about 275, 0.02 and 521$^{\circ}C$ respectively. To observe ferroelectric characteristics we calculated Pr(remnant polarization) and Ec(coercive field) byhysteresis curve. Ec was 72kV/cm and Pr was 11.46$\mu$C/$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.316-316
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• 2008

Using an evaporation method, $SiO_2$ was deposited as a buffer layer between a flexible PET substrate and a ITO film deposited by DC magnetron sputtering and electro-optical properties were investigated with thickness variance of $SiO_2$ layers. After coating a $SiO_2$ layer and a ITO film, the ITO/$SiO_2$/PET was heated up to $200^{\circ}C$ and the resistivity and the transmittance were measured by hall effect measurement system and UV/VIS/NIR spectroscopy. As a result of depositing a $SiO_2$ buffer layer, the resistivity increased and the transmittance and adhesion property were enhanced than ITO films with no buffer layers and the resistivity was lowered as $SiO_2$ thickness increased from 50 $\AA$ to 100 $\AA$. It was found that the transmittance was independent of annealing temperature variance in $150^{\circ}C{\sim}200^{\circ}C$ and the resistivity decreased as the temperature increased and especially decreasing rate of the resistivity was higher as the buffer layer thickness was thinner. So under optimized depositing of $SiO_2$ buffer layers and post-annealing of ITO/$SiO_2$/PET, ITO films with enhanced adhesion, electro-optical properties can obtained.

• Applied Chemistry for Engineering
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• v.25 no.2
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• pp.174-180
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• 2014

A plasma hydrophobic coating on commercial fish feed was conducted to prolong the floating time of feed, thereby enhancing the feed consumption rate and reducing the contamination of water in fish farms. The hydrophobic coating on the fish feed was prepared using an atmospheric-pressure dielectric barrier discharge (DBD) plasma with hexamethyldisiloxane (HMDSO), toluene and n-hexane as the precursors. The effect of the parameters such as input power, precursor type and coating time on the coating performance were examined. The physicochemical properties of the coating layer were analyzed using a Fourier transform infrared (FTIR) spectrometer and a contact angle (CA) analyzer. The water CA increased after the coating preparation, indicating that the surface changed from hydrophilic to hydrophobic. The FTIR characterization revealed that the hydrophobic layer was comprised of functional groups such as $CH_3$, Si-O-Si and Si-C. As a result of the hydrophobic coating, the floating time of the fish feed increased from several seconds to 3 minutes, which suggested that the plasma coating method could be a viable means for practical applications. Compared to the water CA measured as soon as the coating layer was prepared, the 6-day aged sample exhibited a substantial CA increase, confirming the aging effect on the improvement of the hydrophobicity.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.454-457
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• 2011

We report the preparation of nanocrystalline cobalt ferrite, $CoFe_2O_4$, particles using recycled $Co_3O_4$ and their surface coating with silica using micro emulsion method. Firstly, the $Co_3O_4$ powders were separated from waste cemented carbide with acid-base chemical treatment. The cobalt ferrite nanoparticles with the size 10 nm are prepared by thermal decomposition method using recycled $Co_3O_4$. $SiO_2$ was coated onto the $CoFe_2O_4$ particles by the micro-emulsion method. The $SiO_2$-coated $CoFe_2O_4$ particles were studied their physical properties and characterized by X-ray diffraction (XRD), high resolution-transmission electron microscopy (TEM) analysis and CIE Lab value.

• Korean Chemical Engineering Research
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• v.53 no.3
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• pp.276-281
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• 2015

Nanostructured $TiO_2-SiO_2$ materials have widely been used as anti-reflecting coating, optical-chemical sensors and catalysts because of their superior optical and thermal properties as well as chemical durability. Web type $SiO_2$ microfibers with nano-crystalline $TiO_2$ were prepared by electrospinning of Ti-PCS mixed solution and oxidation controlled heat-treatment, rather simple than sol-gel process. Nano-crystalline anatase phase were formed for the heat-treatment up to $1200^{\circ}C$ and they were finely dispersed in the amorphous $SiO_2$ matrix.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.107-110
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• 2002

The optical memory devices of BST thin films to composite $(Ba_{0.7}\;Sr_{0.3})TiO_{3}$ using sol-gel method were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_{2}/Si$ substrate. The structural properties of optical memory devices to be ferroelectric was investigated by fractal analysis and 3-dimension image processing. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$ and $3800[\AA]$. BST thin films exhibited the most pronounced grain growth. The surface morphology image was roughness with coating numbers. The thin films increasing with coating numbers shows a more textured and complex configuration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.24-28
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• 2010

We have proposed an Buffer layer to improve the transmittance of ITO. Here, $SiO_2$ and $TiO_2$ were selected as the Buffer layer coating material. The structures of Buffer layer were designed in ITO/$SiO_2/TiO_2$/Glass and ITO/Glass/$TiO_2/SiO_2$. Then, these materials were deposited by ion-assisted deposition system. Transmittances of deposited ITO were 86.14 and 85.07%, respectively. These results show that the proposed structure has higher transmittance than the conventional ITO device.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1534-1538
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• 2011

Uniform, hollow nanosilica spheres were prepared by the chemical coating of cationic polystyrene (cPS) with tetraethylorthosilicate (TEOS), followed by calcination at 600 $^{\circ}C$ under air. cPS was synthesized by surfactant-free emulsion polymerization using 2,2'-azobis (2-methyl propionamidine) dihydrochloride as the cationic initiator, and poly(vinyl pyrrolidone) as a stabilizer. The resulting cPS spheres were 280 nm in diameter, and showed monodispersion. After coating, the hollow silica product was spherically shaped, and 330 nm in diameter, with a narrow distribution of sizes. Dispersion was uniform. Wall thickness was 25 nm, and surface area was 96.4 $m^2/g$, as determined by BET. The uniformity of the wall thickness was strongly dependent upon the cPS surface charge. The effects of TEOS and ammonia concentrations on shape, size, wall thickness, and surface roughness of hollow $SiO_2$ spheres were investigated. We observed that the wall thicknesses of hollow $SiO_2$ spheres increased and that silica size was simultaneously enhanced with increases in TEOS concentrations. When ammonia concentrations were increased, the irregularity of rough surfaces and aggregation of spherical particles were more severe because higher concentrations of ammonia result in faster hydrolysis and condensation of TEOS. These changes caused the silica to grow faster, resulting in hollow $SiO_2$ spheres with irregular, rough surfaces.

• Korean Journal of Optics and Photonics
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• v.9 no.3
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• pp.162-167
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• 1998

$SiO_xF_y$ optical thin films of lower refractive indices than glass substrates were fabricated by the CF$_4$ ion beam assisted deposition method and the optical, structural and chemical properties of them were investigated. Refractive index of $SiO_xF_y$ films was varied from 1.455 to 1.394 by decreasing the anode voltage or from 1.462 to 1.430 by increasing the current density of end-Hall ion source. FT-IR and XPS analyses show that as the F concentration increases, the Si-O bond at $1080m^{-1}$ shifts to higher wavenumber, the OH bonds are reduced drastically, and the fluorine atoms at the air-film interface are desorbed out by reacting with $H_2O$ in the atmosphere. $SiO_xF_y$ thin films are amorphous by the XRD analysis and have the compressive stress below 0.3 GPa. As an application of $SiO_xF_y$ thin films a two-layer antireflection coating was fabricated using a $SiO_xF_y$ film as a low refractive index layer and a Si film as an absorbing one.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.897-907
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• 1997

Thin films of Bi4-xSmxTi3O12(0$\leq$x$\leq$2) were prepared on Pt/Ti/SiO2/Si(100) at $700^{\circ}C$ using spin-coating with sols derived from Bi-Sm-Ti complex alkoxides. From X-ray diffraction analysis, it was observed that Sm-substituted phases resembled ferroelectric Bi4Ti3O12 in structure. Variations of their lattice parameters depending on the amount of Sm-substitution showed that an anomalous structural distortion might exist at x=1. The grain sizes of the thin films decreased from 0.115 ${\mu}{\textrm}{m}$ to 0.078${\mu}{\textrm}{m}$ with increasing the amount of Sm-substitution. The dielectric constants and the remanent polarizations of the thin films decreased with increasing the amount of the Sm-substitution, which were related to decrease of the stereo-active Bi3+ ion contributing to polarization. However, these values were exceptionally high at x=1, compared to those of the other substituted phases. Such an anomaly suggests that the phase of x=1 has 1:1 chemical ordering between Sm and Bi in structure. The thin films of all compositions except x=2 showed ferroelectricity. The thin film of x=2 was paraelectric, whose grains were too fine to exhibit ferroelectricity.