• Title/Summary/Keyword: $SiO_2$ coating

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Stability of Coated Green Phosphors for Enhancing Picture Quality of PDP

  • Han, B.Y.;Kim, J.H.;Yoo, J.S.;Kim, Y.K.;Hur, Y.K.;Choi, C.K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.942-945
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    • 2006
  • The picture quality of a plasma display panel is very sensitive to the phosphor characteristics such as luminescence, decay time, surface properties, and even longevity of phosphor material in itself. In our previous work, the discharging characteristics in green cell of PDP were demonstrated to be enhanced by coating $Zn_2SiO_4:Mn^{2+}$ phosphors with positively charged metal oxide such as MgO. Here, $Zn_2SiO_4:Mn^{2+}$ phosphors were coated by various metal oxides for examining the coating effect on the picture quality. Specially, longevity while fabricating the panel was investigated for panel application in this work. Also the effects of ion and electron bombardment on the phosphor surface will be discussed in this work.

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A Surface Modification of Hastelloy X by Sic Coating and Ion Beam Mixing for Application in Nuclear Hydrogen Production

  • Kim, Jaeun;Park, Jaewon;Kim, Minhwan;Kim, Yongwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.205.2-205.2
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    • 2014
  • The effects of ion beam mixing of a SiC film coated on super alloys (hastelloy X substrates) were studied, aiming at developing highly sustainable materials at above $900^{\circ}C$ in decomposed sulfuric acid gas (SO2/SO3/H2O) channels of a process heat exchanger. The bonding between two dissimilar materials is often problematic, particularly in coating metals with a ceramics protective layer. A strong bonding between SiC and hastelloy X was achieved by mixing the atoms at the interface by an ion-beam: The film was not peeled-off at ${\geq}900^{\circ}C$, confirming excellent adhesion, although the thermal expansion coefficient of hastelloy X is about three times higher than that of SiC. Instead, the SiC film was cracked along the grain boundary of the substrate at above $700^{\circ}C$. At ${\geq}900^{\circ}C$, the film was crystallized forming islands on the substrate so that a considerable part of the substrate surface could be exposed to the corrosive environment. To cover the exposed areas and cracks multiple coating/IBM processes have been developed. An immersion corrosion test in 80% sulfuric acid at $300^{\circ}C$ for 100 h showed that the weight retain rate was gradually increased when increasing the processing time.

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Growth of Textured CoFe2O4 Thin Films on Platinized Silicon Prepared by a Sol-Gel Method

  • Mustaqima, Millaty;Lee, Min Young;Kim, Deok Hyeon;Lee, Bo Wha;Liu, Chunli
    • Journal of Magnetics
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    • v.19 no.3
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    • pp.227-231
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    • 2014
  • We fabricated textured polycrystalline $CoFe_2O_4$ thin films on $Pt(111)/TiO_2/SiO_2/Si$ substrate through a sol-gel method. We varied the thickness of the films, by using precursor solutions with different concentrations of 0.1, 0.2, and 0.3 M, and by depositing 5, 8, or 10 layers on the substrate by spin-coating. X-ray diffraction spectra indicated that when the precursor concentration of the solution was higher than 0.1 M, the spin-coated films were preferentially oriented in the <111> direction. Inspection of the surface morphology by scanning electron microscopy revealed that $CoFe_2O_4$ thin films prepared with 0.2 M solution and 5-time spin-coatings had smoother surface, as compared to the other conditions. Each coating had an average thickness of about 50 nm. The magnetic properties measured by vibrating sample magnetometer showed magnetic anisotropy, as evidenced from the difference in the in-plane and out-of-plane hysteresis loops, which we attributed to the textured orientation of the $CoFe_2O_4$ thin films.

Dielectric and Electrical Properties of $Sr_{0.9}Bi_{2+x}Ta_2O_9$ Thin Films on $IrO_2$ Electrode ($IrO_2$를 하부전극으로 사용한 $Sr_{0.9}Bi_{2+x}Ta_2O_9$ 박막의 유전 및 전기적 특성)

  • 박보민;송석표;정병직;김병호
    • Journal of the Korean Ceramic Society
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    • v.37 no.3
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    • pp.233-239
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    • 2000
  • Sr0.9Bi2+xTa2O9(x=0, 0.1, 0.2, 0.3) thin films on IrO2/SiO2/Si or Pt/Ti/SiO2/Si substrate were prepared by spin coating method using SBT stock solutions synthesized by MOD process. SBT thin films on IrO2 transformed to layered perovskite phase at $700^{\circ}C$, but showed low breakdown voltage due to their porous microstructure. The smaple of Sr0.9Bi2+xTa2O9 composition showed the best dielectric and electrical properties. When the sample of the same composition was annealed at 80$0^{\circ}C$, the dielectric and electric properties were improved due to the grian growth and dense surface. the remanent polarization values(2Pr) at $\pm$3 V for IrO2 and Pt electrodes were 10.5, 7.15$\mu$C/$\textrm{cm}^2$, respectively. The SBT thin film with IrO2 electrode showed the lower coercive field. The leakage current density and breakdown voltage of SBT thin films on IrO2 were higher than those on Pt.

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The Study on the Improvement of Mechanical Performance due to Change in Temperature and Sputtering by $SiO_2/Ag$ Material of Bonded Dissimilar Materials with Cylindrical Shape (원통형 이종 접합 소재의 $SiO_2/Ag$스퍼터 증착과 온도 변화에 따른 기계적 특성에 관한 연구)

  • Lee, Seung-Hyun;Choi, Seong-Dae;Lee, Jung-Hyong
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.11 no.3
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    • pp.138-145
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    • 2012
  • The material used in this study is dielectric and ferrite. Because of the unique characteristics of the material, it is easily exposed to external shocks and pressure, which cause damage to the product. However, after being processed under high-temperature environment repeatedly, the mechanical strength of the product is greatly increased due to the change of the electrical properties. In this paper, dielectric and bonded ferrite material was tested for the material properties. The equipment for this experiment was produced and tested to allow Cylindrical and Three-dimensional geometry of the product for the vacuum deposition. For Cylindrical shape of the product, in order to obtain the equivalent film thickness, the device is constructed in a vacuum chamber which gives arbitrary revolving and rotating capability. The electrical performance of the product is obtained through this process as well. However, as mentioned above, with repeating processes under high temperature and exposure to external environment, the product is easy to be broken. This experiment has enabled us to find out a stable condition to apply the communication of the RF high frequency to each of the core elements, such as Ferrite and Dielectric which is then used for the mechanical strength of the Raw material, hetero-junction material, Hetero-junction Ag Coating material and hetero-junction Ag Coating SiO2 Coating material respectively.

Optical reflectance of TiO2/SiO2 multilayer coating flat mirrors (TiO2/SiO2 다층 박막 평판 mirror의 광학적 반사)

  • Lee, Chanku;Lee, Sudae;Joung, Maengsig
    • Journal of Korean Ophthalmic Optics Society
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    • v.7 no.1
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    • pp.75-78
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    • 2002
  • Thirty three layer $TiO_2/SiO_2$ coating mirrors with high reflectance through a 620~820nm wavelength range have been designed and fabricated by electron beam evaporation method. Multilayer films were deposited on glass(BK7) and sequentially. The high reflector design is based on alternating high and low refractive index layers. $n_H$ and $n_L$ such that a "stopband"(or area of high reflectivity) is created that is centered around the design wavelength. ${\lambda}_0$. The measured transmittance spectrum with an incident wavelength at an incident angle of $40^{\circ}{\pm}7^{\circ}$ exhibited a reflectance of 99.9% at the wavelength of 620~820nm but high peak transmittance in the wavelength region from 700 to 740nm.

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The Applications of Sol-Gel Derived Tin Oxide Thin Films

  • Park, Sung-Soon;John D. Mackenzie
    • The Korean Journal of Ceramics
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    • v.2 no.1
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    • pp.1-10
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    • 1996
  • Transparent conducting $SnO_2$-based thin films have been coated on float substrates such as fused quartz, and ceramic fiber cloths such as the Nexel and E-glass cloth from tin alkoxides by the sol-gel technique. Also, thin films of alternating layers of $SnO_2$ and $SiO_2$ have been fabricated by dip coating. The sheet resistance and average visible transmittance of the films were investigated in the aspect of the applications as transparent electrodes such as liquid crystal displays, photo-detectors and solar cells. The Nextel and E-glass cloths coated with antimony-doped tin oxide (ATO) had sheet resistance of as low as $20 \;ohm/{\Box}$ and $120ohm/\;{\Box}$, respectively. The promotion effects of additives as $La_2O_3$ and Pt on the ethanol gas sensing properties of the films were investigated in the aspects of the applications as an alcohol sensor and a breath alcohol checker. Possible evidence of quantum well effects in the oxide multilayers of $SnO_2$ and $SiO_2$ was investigated.

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Luminescent Properties of Y2O3:Eu3+ Thin Film Through Spin-coating and Rapid Thermal Annealing Process (스핀코팅 및 급속열처리 공정을 통해 형성된 Y2O3:Eu3+ 박막의 발광특성)

  • Jehong Park;Yongseok Jeong
    • Journal of the Semiconductor & Display Technology
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    • v.23 no.1
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    • pp.88-91
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    • 2024
  • The europium doped yttrium oxide (Y2O3:Eu3+) thin film was formed on a Si substrate by the conventional spin-coating process followed by rapid thermal annealing (RTA) treatment. The spinning profiles such as rotation speed, acceleration and holding times were controlled during the spin-coating process for the best condition of the Y2O3:Eu3+ thin film. The RTA treatment was conducted for several temperature in order to crystallize the spin coated film. The Y2O3:Eu3+ thin film presented best performance in the conditions of 4000 rpm, 30 s and 10 s of rotation speed, acceleration time and holding time, respectively, at a fixed RTA temperature of 900 ℃.

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Antireflection layer Coating on the Epitaxial Base Si Solar Cell (에피텍셜 베이스 Si 태양전지의 광반사 방지막 처리)

  • 장지근;임용규;황용운
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.141-144
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    • 2003
  • Si 태양전지의 기전력 형성에 이용되는 빛의 파장범위$(0.4{\mu}m\leq\lambda\leq0.97{\mu}m)$에서 AM1 스펙트럼과 Si 굴절율을 수학적으로 모델링하고 광반사 방지막$(SiO_2)$의 두께에 따른 Si 태양전지의 유효 광 흡수전력을 전산 모사하였다. 전산 모사로부터 얻어진 Si 태양전지의 유효 광흡수전력은 $SiO_2$막의 두께가 $500\AA$$1000\AA$일 때 각각 $520\;W/m^2$$450\;W/m^2$로 나타났으며, $d(SiO_2)=1000\AA$에서 최대광흡수 특성을 보였다. 광반사 방지막의 처리에 따른 유효 광흡수전력의 차이를 알아보기 위해 $SiO_2$막의 두께를 $500\AA$$1000\AA$으로 형성한 2종류의 에피텍셜 베이스 Si 태양전지$[EBS(500\AA),\;EBS(1000\AA)]$를 제작하고 효율특성을 분석한 결과, AM1 $100\;mW/cm^2$ 입사광 아래 $EBS(1000\AA)$ 전지는 $EBS(500\AA)$전지에 비해 효율이 약 $15\%$ 높게 나타났다.

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Structural and Dielectric Properties of Sol-gel Derived BiFeO3/Pb(Zr,T)O3 Heterolayered Thin Films

  • Nam, Sung-Pill;Lee, Sung-Gap;Lee, Young-Hie
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.5
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    • pp.212-215
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    • 2010
  • $BiFeO_3/Pb(Zr_{0.95}Ti_{0.05})O_3$ (BFO/PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/$SiO_2$/Si substrate using metal alkoxide solutions. The coating and heating procedure was repeated 6 times to form the heterolayered films. The thickness of the BFO/PZT films after one cycle of drying/sintering is about 30-40 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. As the number of coatings increased, the dielectric constant increased, so that the value for the 6-layer film was 1360 at 1 KHz.