• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.653-659
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• 1996

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.129-134
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• 2004

The development of fabrication processes of polycrystalline-silicon-thin-film transistors (poly-Si TFTs) at low temperatures is reviewed. Rapid crystallization through laser-induced melt-regrowth has an advantage of formation of crystalline silicon films at a low thermal budget. Solid phase crystallization techniques have also been improved for low temperature processing. Passivation of $SiO_2$/Si interface and grain boundaries is important to achieve high carrier transport properties. Oxygen plasma and $H_2O$ vapor heat treatments are proposed for effective reduction of the density of defect states. TFTs with high performance is reported.

• Journal of the Korean Ceramic Society
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• v.17 no.1
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• pp.20-26
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• 1980

The crystallization behaviors of slag-based glass in $CaO-MgO-Al_2O_3-SiO_2(-Na_2O)$ system have been studied. The mother glass containing 16.50 CaO, 7.50MgO, 19.70Al2O3, 50.80SiO3 and 2.09wt% $Na_2O$ was prepared by using Korean domestic raw materials such as granulated slag, serpentine, sea sand and etc. The glass-ceramics composed of major crystalline phase diopside was produced by the heat treatment in a temperature range from 850$^{\circ}$ to 9$25^{\circ}C$ for 0-6hr. The composition and morphology of diopside phase formed in the system were examined by X-ray diffraction analysis and electron microscopy. The kinetic measurements such as J.M. A plot and Arrhenius plot indicated that the process of nucleation of the initially formed diopside phase could be described from the view point of instantaneous nucleation. It was also demonstrated that the linear crystal growth of diopside phase was proceeded by short range diffusion of $Mg^{2+}$ and $Ca^{2+}$ ion. The microstructures of the resulting glass-ceramics were consisted of leafroidal shaped crystalline aggregations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.570-573
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• 2001

In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.258-263
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• 2000

Effect of microwave heat-treatment processing on the electrical conductivity and crystallization behavior for the $Li_2O-2SiO_2$-xCuO glasses with various CuO contents was compared with that of conventional heat-treatment processing. The electrical conductivities of samples heat-treated at $500^{\circ}C$ by different heat-treatment processing were increased with increasing CuO content and higher electrical conductivities were obtained from microwave heat-treated samples. From the result of XRD analyses, microwave heat-treatment processing enhanced the degree of crystallization in the formation of $Li_2Si_2O_5, Li_2Cu_5$($Si_2O_7)_2$, and $Li_2Cu_2O_3$ crystalline phases. The electrical conductivities of $Li_2O-2SiO_2$-1.3CuO (30 mol% CuO) glass heat-treated at $500^{\circ}C$ for 30 min under conventional and microwave heat-treatment processing were $0.11{\times}10^{-4}(\Omega \textrm {cm})^{-1}$ and $0.68{\times}10^{-4}(\Omega \textrm {cm})^{-1}$ at room temperature, respectively. It was speculated that microwave energy enhanced the degree of crystallization and increased electrical conductivity in the samples.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.169-178
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• 1998

The crystal phases precipitated in various compositions glass of CaO-$SiO_2-P_2O_5$ system, were identified by XRD. E composition (CaO 49.4, $SiO_2\;36.8,\;P_2O_5$ 8.8 wt%) glass in which both apatite(($Ca_{10}(PO_4)_6O$ and $\beta$-wollastonite($CaSiO_3$) crystals would precipitate by heating, was selected as an experimental composition to prepare the glass ceramics with high bending strength and good bioactivity to the living bone. Glass powders of E composition were unidirectionally crystallized at $1050^{\circ}$C in the temperature-gadient furnace and the resultant glass ceramics were characterized. Bending strength of the glass ceramics was also measured. To investigate the bond forming ability between the glass ceramics and living bone tissue, soaking test of glass ceramics in simulated body fluid was carried out. Densed glass ceramics composed of apatite and $\beta$-wollastonite crystal were prepared by unidirectional crystallization under the optimum conditions. (2 0 2) plane of $\beta$-wollastonite crystals tended to grow perpendicularly to the crystallization direction. Average bending strength of this glass ceramics was 186.9 MPa, higher than that of the glass ceramics prepared by isothermal (not directional) crystallization In soaking test, a thin layer of apatite crystallite was formed on surface of the glass ceramics in 3 days. Apatite crystals formed on the glass ceramics could be act a role to make the chemical bond between the glass ceramics and living bone tissue.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1994.04c
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• pp.10-11
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• 1994

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.2
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• pp.50-53
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• 2019

In this study, polycrystalline silicon thin film useful for the solar cells was fabricated by AIC(Aluminum Induced Crystallization) process. A diffusing barrier for this process is prepared with $Al_2O_3$. For the maximization of the grain size of the polycrystalline silicon, a selective blasting of the $Al_2O_3$ diffusing barrier was conducted before annealing treatment. The heat treatment for the activation of the amorphous-Si (a-Si) layer was carried out with Rapid Thermal Annealing (RTA) process. Crystallization of the a-Si layer was analyzed with XRD. It was confirmed that a-Si was crystallized at $500^{\circ}C$ and the silicon crystal is observed to be formed and the grain size of the polycrystalline silicon was observed to be $15.9{\mu}m$.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.507-515
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• 1995

The monolithic dry gels of the Li2O-Al2O3-TiO2-SiO2 system were prepared by the sol-gel technique using metal alkoxides as starting materials to obtain monolithic glass-ceramics at low temperature without melting. Activation energy for the crystal growth of the gel with 6.05% TiO2, nucleating ageng, for the preparation of Li2O-Al2O3-TiO2-SiO2 system glass-ceramic was 101.14kcal/mol. As a result of the analysis of DTA & XRD, it was confirmed that the crytallization of Li2O-Al2O3-TiO2-SiO2 system glass-ceramic was the most efficient when 6.05% TiO2, nucleating agent, was added. $\beta$-eucryptite solid solution crystals and $\beta$-spodumene solid solution crystals were detected in the sample heat treated above 85$0^{\circ}C$. The sintered gel heat treated at 85$0^{\circ}C$ had the specific surface area of 185$m^2$/g, the pore volume of 0.19cc/g and the average pore radius of 20.8$\AA$. This shows that the sintered gel is also comparatively porous material. In temperature range of 25~85$0^{\circ}C$ thermal expansion coefficient of the specimen which was crystallized for 10hrs at 85$0^{\circ}C$ was 6.7$\times$10-7/$^{\circ}C$, which indicated that the crystallized specimen was turned out to be the glass-ceramic with low thermal expansion.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.43-46
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• 2000

Nd:YAG laser of 355 nm wavelength, which amounts to 3.5 eV, produced by a harmonic generator was used to create Ag metallic particles as seeds for nucleation in photosensitive glass containing $Ag^+$ and $Ce^{3+}$ . The pulse widths and frequency of the laser were 8ns and 10 Hz, respectively. For crystalline growth, heat-treatment following laser irradiation was carried out at $570^{\circ}C$ for 1h. Then, the $LiAlSi_3O^8$ crystal phase appeared in the laser irradiated lithium aluminum silicate glass. We present the effect of laser-induced nucleation compared with spontaneous nucleation by heat treatment fur crystallization in the glass.