• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.18-21
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• 1995

In this study, crystallization, water swelling and dielectric properties of Li$_2$O-MgO-MgF$_2$-SiO$_2$System glass ceramics were investigated. Base glass melted at 1450$^{\circ}C$ and crystallized through heat treatment. The optimum heat treatment schedule was 460$^{\circ}C$ for nucleation and 640$^{\circ}C$, 1100$^{\circ}C$ for crystallization. The Principle crystalline phase was lithium fluorhectorite. Lithium fluorhectorite was the crystal phase which it was influenced water swelling. Samples progressed 2 minutes later they have rapid hydration at forced water swelling condition. Also value of dielectric constants have approximately 10 at 100kHz.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.111-117
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• 2012

Dependencies of thermal properties on the crystallization behavior of $0.9CaMgSi_2O_6-0.1MgSiO_3$ glass-ceramics were investigated as a function of heat-treatment temperature from $750^{\circ}C$ to $950^{\circ}C$. The crystallization behavior of the specimens depended on the heat-treatment temperature, which could be evaluated by differential thermal analysis (DTA), Fourier transform infrared spectroscopy (FT-IR), and X-ray diffraction (XRD) analysis by the Rietveld-reference intensity ratio (RIR) combined procedure. With an increase of the heat-treatment temperature, the thermal conductivity and thermal diffusivity of the heat-treated specimens increased. These results could be attributed to the increase of crystallization with heat-treatment temperature. However, the specific heat capacity of the heat-treated specimens was not affected by the heat-treatment temperature. The thermal conductivities measured from $25^{\circ}C$ to $100^{\circ}C$ were also discussed for application to lighting-emitting diode (LED) packages and substrate materials.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.79-79
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• 1994

• Journal of information and communication convergence engineering
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• v.1 no.3
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• pp.133-138
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• 2003

The preparation of $Al_{2}O_{3}-SiO_{2}$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous $Al_{2}O_{3}-SiO_{2}$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_{2}O_{3}-SiO_{2}$ upon heating to $1000^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.957-962
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• 2003

The preparation of $Al_2$O$_3$-SiO$_2$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. for the preparation of thin, continuous $Al_2$O$_3$-SiO$_2$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_2$O$_3$-SiO$_2$ upon heating to 100$0^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1007-1010
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• 2004

We report crystallization of a-Si using XeCl excimer laser annealing [1] on the plastic substrate. We tried to obtain higher crystallinity as the effect of $CeO_2$ seed layer patterned. Also, we tried to control the direction of crystallization growth of silicon layer for lateral growth as the type of $CeO_2$ pattern. This crystallization method plays an important role in low temperature poly-Si (LTPS) [2] process and flexible display.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.284-288
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• 1997

FT-IR and FT-Raman spectra were measured for 15Li$_{2}$O.3Al$_{2}$O$_{3}$.78SiO$_{2}$. 4K$_{2}$O glass system after UV irradiations. Optimum UV irradiation time of Li$_{2}$O.SiO$_{2}$ crystalline phase was 60 seconds and crystalline phase of Li$_{2}$O.SiO$_{2}$ was leached out on 5% HF. 977 cm$^{1}$ band of FT-Raman spectra can be attributed to two-non bridging oxygen in unit cell for 1 hour and optimum crystallization was confirmed for 3 hrs, 630.deg. C.

• Journal of the Korean Ceramic Society
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• v.19 no.1
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• pp.13-18
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• 1982

The crystallization of metastable "orthorhombic" phase from the glass in the system of Na $AlSi_3O_8-CaAl_2Si_2O_8$ is studied. These crystals are crystallized in the range of composition from $Ab_80An_20$ to An100. The symmetry of these crystals show orthorhombic as a possible space group P22121. Two probable twin models are proposed. proposed.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.54-54
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• 1996

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.407-411
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• 2000

Low-temperature solder glass for use in electronic package was experimentally prepared and its crystallization behavior was investigated using differential thermal analysis (DTA) under nonisothermal condition. The composition of the solder glass was determined from PbO-ZnO-$B_2$$O_3$-$TiO_2$ glasses containing small amounts of CaO, $SiO_2$$A1_2$$O_3$ and $P_2$$O_5$. The crystallization exotherm corresponding to the formation of lead titanate (PbTiO$_3$) was observed. The crystallization of $PbTiO_3$was a three-dimensional process with the average activation energy of 223$\pm$3 kJ/mol for the crystallization from the glass matrix.