• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.836-839
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• 2001

Ba(Zr$_{x}$Ti$_{l-x}$)O$_3$(BZT) thin films of x=0.2 and 150nm thickness were prepared on Pt/SiO$_2$/Si substrate by RF Magnetron Sputtering deposition at several temperature (40$0^{\circ}C$, 50$0^{\circ}C$, $600^{\circ}C$). As the substrates temperature increase, crystallization of the films and high dielectric constants can be obtained. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature, and the film's breakdown voltage is higher in low temperature.ure.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.171-174
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• 2005

To improve the strength of glass is being studied in order to contribute to weight saving of flat panel displays. Generally, the strength achieved of glass-ceramics is higher as is the fracture toughness by the formation of a heterogeneous Phase inside glass. In this study, Ag-doped $45SiO_2-24CaO-24Na_2O-4P_2O_5$ glasses were irradiated to strengthen by crystallization using femto-second laser pulse. UV/VIS, Spectroscope, XRD, nano-indenter and SEM etc. irradiation of laser pulse without heat-treated samples was analyzed. Samples irradiated by laser had higher value$(4.4\~4.56{\ast}10-3Pa)$ of elastic modulus which related with strength of glass than values heat-treated samples and these are $1.2\~1.5$ times higher values than them of mother glass. This process can be applicable to the strengthening of thinner glass plate, and it has an advantage over traditional heat-treatment and ion-exchange method.

• The Journal of the Petrological Society of Korea
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• v.12 no.1
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• pp.32-52
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• 2003

The Mt. Baegyang in Busan, composed of sedimentary basement rocks (Icheonri Formation), andesite (lava), andesitic pyroclastic rocks, fallout tuff and tuffaceous sedimentary rocks, rhyolitic pyroclastic rocks, intrusive rocks (granite-porphyry, felsite, and biotite-granite) of Cretaceous age in ascending order. The volcanic rocks show a section of composite volcano which comprised alternation of andesitic lava and pyroclasitc rocks, rhyolitic pyrocalstic rocks (tuff breccia, lapilli tuff, fine tuff) from the lower to the upper strata. From the major element chemical analysis, the volcanic and intrusive rocks belong to calc-alkaline rock series. The trace element composition and REE patterns of volcanic and plutonic rocks, which are characterized by a high LILE/HFSE ratio and enrichments in LREE, suggest that they are typical of continental margin arc calc-alkaline rocks produced in the subduction environment. Primary basaltic magma might have been derived from partial melting of mantle wedge in the upper mantle under destructive plate margin. Crystallization differentiation of the basaltic magma would have produced the calc-alkaline andesitic magma. And the felsic rhyolitic magma seems to have been evolved from andesitic magma with crystallization differentiation of plagioclase, pyroxene, and hornblende.

• Journal of the Korean Ceramic Society
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• v.30 no.12
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• pp.1054-1058
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• 1993

The effects of TiO2 addition as a nucleating agent on the cordierite glass-ceramics were investigated. The glass compositiion was stoichiometric cordierite composition of 13.7MgO-34.9Al2O3-51.4SiO2(wt%), and TiO2 as a nucleating agent was added by 5, 10 and 15wt% in addition. The optimum amount of TiO2 addition and appropriate heat treatment schedule were determined by using dilatometer, DTA, XRDA and SEM. The composition containing 10wt% TiO2 was proved to be the best among the investigated compositions. And the optimum heat treatment schedule was 840℃-2h for the nucleation and 1140℃-2h for the crystallization. The properties were as follows. The crystallinity was ∼75%, thermal expansion coefficient 33×10-7/℃(25∼700℃), dielectric constant 7.6(1KHz) and Vicker's hardness 5.1GPa.

• Applied Microscopy
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• v.24 no.4
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• pp.132-144
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• 1994

The application of TEM in investigating the evolution of microstructure during solid phase crystallization of the amorphous Si, $Si_{1-x}Ge_x,\;and\;Si_{1-x}Ge_x/Si$ films deposited on $SiO_2$ substrate, in identifying the failure mechanism of the TiN barrier layer in the Cu-metallization scheme, and in comparing the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films are discussed. First, it is identified that the evolution of microstructure in Si and $Si_{1-x}Ge_x$ alloy films strongly depends on the concentration of Ge in the film. Second, the failure mechanism of the TiN diffusion barrier in the Cu-metallization is the migration of the Cu into the Si substrate, which results in the formation of a dislocation along the Si {111} plane and precipitates (presumably $Cu_{3}Si$) around the dislocation. Finally, the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films is also quite different in these two cases. From these several cases, we demonstrate that the information which we obtained using TEM is critical in understanding the behavior of materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.375-375
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• 2012

최근 차세대 평판 디스플레이의 응용에 많은 주목을 받고 있는 AMOLED의 경우 전류구동 방식이기 때문에 a-Si TFT 보다는 LTPS-TFT가 요구되며, 대면적 기판에서의 결정립 크기의 균일도가 매우 중요한 인자이다. 비정질 실리콘 박막 상부 혹은 하부에 도전층을 개재하고, 상기도전층에 전계를 인가하여 그것의 주울 가열에 의해 발생한 고열에 의해 비정질 실리콘 박막을 급속 고온 고상 결정화하는 방법에 관한 기술인 JIC (Joule-heating Induced Crystallization) 결정화 공정은 기판 전체를 한번에 결정화 하는 방법이다. JIC 결정화 공정에 의하여 제조된 JIC poly-Si은 결정립 크기의 균일성이 우수하며 상온에서 수 micro-second내에 결정화를 수행하는 것이 가능하고 공정적인 측면에서도 별도의 열처리 Chamber가 필요하지 않는 장점을 가지고 있다. 그러나 고온 고속 열처리 방법인 JIC 결정화 공정을 수행 하면 Arc에 의하여 시편이 파괴되는 현상이 발견되었다. 본 연구에서는 Arc현상의 원인을 파악하기 위해 전압 인가 조건 및 시편 구조 조건을 변수로 결정화실험을 진행하였다. ARC가 발생하는 Si층과 Electrode 계면을 식각 분리하여 Electrode와 Si층 사이의 계면이 형성되지 않는 조건에서 전계를 인가하는 실험을 통하여 JIC 결정화 공정 중 고온에 도달하게 되면, a-Si층이 변형되어 형성된 poly-Si층이 전도성을 띄게 되고 인가된 전압이 도전층과 Poly-Si 사이에 위치한 $SiO_2$의 절연파괴(Dielectric breakdown)전압보다 높을 경우 전압 인가 방향에 수직으로 $SiO_2$가 절연 파괴되며 면저항 형태의 전도층의 단락이 진행되며 전도층이 완전히 단락되는 순간 Arc가 발생한다는 것을 관찰 할 수 있었다. 본 실험의 연구 결과를 바탕으로 Arc 발생을 방지하는 다양한 구조의 Equi-Potential 방법이 개발되었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.73-73
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• 2003

최근 LCD(liquid crystal display)분야에서 고해상도와 빠른 응답속도를 가지는 다결정 실리콘 박막트랜지스터에 대한 연구를 하고 있다. 그러나, poly-Si은 poly-Sil-xGex에 비해 intrinsic carrier mobility가 낮고 고온의 결정화 공정을 필요로 한다. 따라서, Poly-Si을 대체할 재료로 poly-SiGe에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 전계에 의해 결정화가 가속되고 한쪽 방향으로 결정화를 제어하여 채널내 전자나 정공의 이동도를 향상시 킬 수 있는 새로운 결정화 방법인 전계 유도 방향성 결정화법을 이용하여 Ge 함량에 따른 a-Sil-xGex(0$\leq$x$\leq$0.5)의 결정화 특성을 연구하였다. 대기압 화학 기상 증착법으로 5000$\AA$의 산화막(SiO$_2$)이 증착된 유리 기판상에 플라즈마 화학 기상 증착법을 이용하여 800$\AA$의 비정질 실리콘을 증착한 후 RF magnetron sputtering법을 이용하여 Ge 함량에 따른 Sil-xGex 박막을 1000$\AA$ 증착하였다. Photolithograph방법을 이용하여 금속이 선택적으로 증착될 수 있는 특정 Pattern을 가진 mask를 형성한 후 금속을 DC magnetron sputtering법을 이용하여 상온에서 50$\AA$.을 증착하였다. 이후 시편에 전계를 인가하기 위해 시편의 양단에 전극을 형성한 후 DC Power Supply를 통해 전압을 제어하는 방식으로 전계를 인가하였다. 결정화 속도는 광학현미경을 이용하여 분석하였으며 결정화된 영역의 결정화 정도는 micro-Raman spectroscopy로 분석하였다.

• Economic and Environmental Geology
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• v.25 no.4
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• pp.435-446
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• 1992

REE, major and trace elements analyses of the Jurassic Daebo granite and Cretaceous Bulguksa granite were carried out to interpet their petrogenesis and relationships between petrogenesis and tectonics. Analytical results are summarized as follows. (1) $SiO_2$ content of the Bulguksa granite (aver. 74.6%) are significantly higher than those of the Daebo granite (aver. 68.1%). Major elements of $TiO_2$, $Al_2O_3$, $P_2O_5$, CaO, MgO, Total FeO, and trace elements of Co, V and Sr are negatively correlated with $SiO_2$. Incompatible elements such as Ba, Sr, Y, Zr and HREE are contained differently in the Bulguksa granites distributed in between Okchon folded belt and Kyongsang sedimentary basin. (2) Trace element abundances show a good discrimination between two goups of granitic rocks. Ba, Sr and V are enriched in Daebo granites, while Zn and Cr are depleted in them. (3) Jurassic granites have quite different Eu anomalies and REE patterns from those of Cretaceous granites: Large negative Eu anomaly in the former and mild or absent Eu anomaly in the latter. The large Eu negative of Cretaceous granitic rocks are interpreted as a differentiated product of fractional crystallization of granitic magma from the upper mantle. Meanwhile, the Daebo plutonic rocks was resulted from the partial melting of subcrustal material or crustal contamination during ascending granitic magma from the mantle. Senario of igneous activities of Mesozoic age in South Korea was proposed based on Kula-Pacific ridge subduction model.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.623-627
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• 1999

We report a new in-situ fluorine passivation method without in implantation by employing excimer laser annealing of $SiO_{x}F_{y}$/a-Si structure and its effects on p-channel poly-Si TFTs. The proposed method doesn't require any additional annealing step and is a low temperature process because fluorine passivation is simultaneous with excimer-laser-induced crystallization. A in-situ fluorine passivation by the proposed method was verified form XPS analysis and conductivity measurement. From experimental results, it has been shown that the proposed method is effective to improve the electrical characteristics, specially field-effect mobility, and the electrical stability of p-channel poly-Si TFTs. The improvement id due to fluorine passivation, which reduces the trap state density and forms the strong Si-F bonds in poly-Si channel and $SiO_2/poly-Si$ interface. From these results, the high performance poly-Si TFTs canbe obtained by employing the excimer-laser-induced fluorine passivation method.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.981-988
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• 1994

Crystallizable glasses with precipitation of celsian were prepared for the purpose of insulating dielectric layers for the devices such as integrated circuit substrates. Crystallization behavior of these glasses were studied by DTA, SEM, XRD analysis and by the measurement of dielectric properties. The base composition of the glass-ceramic consists in weight percent of 30% SiO2, 10% Al2O3, 26% BaO, 10% CaO, 10% ZnO, 8%TiO2 and 6% B2O3. 2-6 wt% Y2O3 were selected as the nucleating agent to promote monoclinic celsian formation. As a result, in barium-rich glasses containing 4~6wt% Y2O3 , monoclinic celsian was developed as major crystalline phase in the temperature range of 850~90$0^{\circ}C$. Also, the dielectric constant and quality factor of these glass-ceramics were about 9 and more than 1000, respectively.