• 한국결정성장학회지
• /
• 제2권2호
• /
• pp.20-32
• /
• 1992

$Na_2O-CaO-MgO-Al_2O_3-SiO_2$계를 기본조성으로 하여 $Na_2O$에 $Li_2O 0.05wt%, $K_2O$를, CaO에 MgO 12.0wt%, ZnO 6.0%를 각각 치환하여 조성을 선정하였다. 기본 유리조성의 결정상은 wollastonite이고, 치환된 조성들은 diopside, diopside.tremolite의 혼정이 나타났다. $Na_2O$를 $Li_2O$로 치환한 시편은 열팽창계수가 감소하였지만 CaO를 ZnO로 치환한 시편은 열팽창 계수가 증가하였다. 곡강도에 있어서는 치환에 따라 모두 증가시켰다. 핵행성제로 $ZrO_2와 $CaF_2$를 각각 1~2wt%의 변화를 시켜본 결과 핵형성제 $ZnO_2$와 $CaF_2$가 1:1, 1:2인 시편은 $1000~1050^{\circ}C$온도에서 급격한 결정성장을 보였으며 1:2시편이 가장 낮은 열팽창 계수값을 나타냈다. 곡강도는 모두 $1000~1050^{\circ}C$의 결정화 온도 범위에서 높은 강도를 나타내었다. 결정화에 필요한 활성화 에너지는 Ozawa와 Kissinger식으로 plot하여 각각 55.24kcal/mol과 53.05kcal/mol이다.

• The Korean Journal of Ceramics
• /
• 제2권1호
• /
• pp.33-38
• /
• 1996

In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.

• 한국응용과학기술학회지
• /
• 제16권3호
• /
• pp.217-221
• /
• 1999

This study was carried out to synthesis the zeolite using the bituminous coal fly ash emitted from power plant that occurs several environmental problems. In spite of fly ash has contained high content of $SiO_2$ and $Al_2O_3$, it disposed mainly landfill. If the effective methods to recover the $SiO_2$ and $Al_2O_3$ were developed, the fly ash could be utilized valuable raw materials. In this study, fly ash was used as raw material to synthesize the zeolite by pressurized hydrothermal reaction. Also, experimental parameters included temperature($70{\sim}110^{\circ}C$, and pressure($140{\sim}200$ psi) of crystallization were investigated. The more crystallization pressure was increased, the more Zeolite 4A was synthesized at 70 and $90^{\circ}C$. Zeolite 4A of metastable phase tend to be transformed into sodalite of stable phase at $110^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.339-342
• /
• 1998

Ferroelectric L $a_2$ $Ti_2$ $O_{7}$(LTO) thin films were prepared by chemical solution deposition processes. Acetylacetone was used as chelating agent and nitric acid was added in the stock solution to control hydrolysis and condensation reaction rate. The LTO thin films were spin-coated on Pt/Ti/ $SiO_2$/(100)Si and Pt/Zr $O_2$/ $SiO_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. The role of acetylacetone in Ti iso-propoxide stabilization by possibly substituting $O^{i}$Pr ligand was studied by H-NMR. B site-rich impurity phase, i.e. L $a_4$ $Ti_{9}$ $O_{24}$, was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results were compared between modified sol-gel and MOD processes.s.s.

• 한국결정성장학회지
• /
• 제30권4호
• /
• pp.136-142
• /
• 2020

아연결정유약은 결정생성의 요건을 맞추기 위해서는 조핵제의 생성 - 조핵제의 양 조절 - 결정의 성장 등의 까다로운 소성과정을 거쳐야 한다. 소성온도 폭이 좁고 아연의 상태에 따라 결정에 영향을 미치는 등 사용이 용이하지 않다. 아연결정생성을 촉진시켜 이를 Frit화하여 폭넓은 소성조건에서 안정적으로 재결정화도록 하여 상용유약으로 유약을 개발할 수 있다.

• 한국전기전자재료학회논문지
• /
• 제11권9호
• /
• pp.711-717
• /
• 1998

BST(70/30) and BST(50/50) thin films were prepared by Sol-Gel method and studied about the microstructural and dielectric properties with Pt and ITO bottom electrodes. The stock solution was synthesized and spin coated on the Pt/Ti$SiO_2$/Si and Indium Tin Oxide(ITO)/ glass substrate. the coated films were dries at 350$^{\circ}C$ for 10 minutes and annealed at $750^{\circ}C$ for 1 hour for the crystallization. The thin films coated on ITO substrate were crystallized easily and the packing density and roughness of surface were better that those of films coated on Pt substrates. In the BST(50/50) composition the structural properties were similar to the BST(70/30) composition and grain size were decreased with increasing the contents of Sr. The dielectric constant was higher in the BST(50/50) composition compared with the BST(70/30) composition. Using the ITO substrate, the dielectric constant was higher than the Pt substrate while the dielectric loss was showed a reverse trend. The dielectric constant with and increase of temperature was decreased slowly.

• 한국산학기술학회논문지
• /
• 제11권1호
• /
• pp.228-233
• /
• 2010

Methyl hydrogen polysiloxne으로 처리한 ZnO, fumed $SiO_2$와 다양한 망간 전구체를 이용하여 서브마이크로미터 크기를 갖는 망간이 도핑된 $Zn_2SiO_4$ 형광체 입자를 고상법으로 제조하였다. 결정화와 광발광 특성은 XRD, SEM, PL스펙트라를 이용하여 분석하였다. 고상법으로 제조한 망간 도핑된 $Zn_2SiO_4$는 methyl hydrogen polysiloxne 처리한 ZnO의 분산과 응집 때문에 $1000^{\circ}C$에서 성공적으로 얻어졌고, 진공자외선 여기하에서 제조된 입자의 최대 PL강도는 0.02mol Mn, $1000^{\circ}C$에서 확인되었다.

• 한국결정성장학회지
• /
• 제10권3호
• /
• pp.211-218
• /
• 2000

$PbZrO_3$의 전구체 용액을 준비하여 spin coating법으로 Pt/Ti/$SiO_2$/Si 기판 위에 박막을 입힌 후 두가지 방법으로 열처리하여 $PbZrO_3$박막 결정의 형성을 조사하였다. 즉, 하나는 $500^{\circ}C$, $550^{\circ}C$, $600^{\circ}C$, $650^{\circ}C$ 및 $700^{\circ}C$로 가열된 전기로 속에 직접 삽입하여 결정화시켰으며, 다른 한가지 방법은 동일한 온도조건하에서 급속가열방식(RTA)으로 열처리하여 박막을 결정화시켰다. 또 전기로에 삽입하여 $700^{\circ}C$에서 1분, 10분, 20분, 30분 동안 열처리하여 시간의 변화에 따른 결정의 형성과정도 살펴보았다. PZ 박막을 전기로에 직접 삽입한 경우 $600^{\circ}C$에서 30분간 그리고 RTA의 경우 $650^{\circ}C$에서 1분간 열처리 하였을 경우 결정이 형성되었고, $700^{\circ}C$의 전기로에 삽입한 경우에는 10분 이상의 시간이 요구되었다. 그러나 양호한 결정 grain의 형성을 위해서는 $700^{\circ}C$에서 30분간 열처리하는 것이 4가지 열처리 시간 중 가장 좋은 것으로 나타났다.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
• /
• pp.110-114
• /
• 2006

Dielectric properties of glass-ceramics with fresnoite(Ba2TiSi208) crystals have been investigated in xK20-(33.3-x)BaO-16.7TiO2-50SiO2 ($0{\leq}x{\leq}20mol%$) glasses. The glassy nature was analyzed by differential thermal analyses and glass-ceramics was variable and control table by the processing parameters like time and temperature. Dielectric constant was measured over a temperature from 125K to 425k at frequencies form 100Hz to 1MHz, and laid in the range 16-10. Piezoelectric constant d33 was measured using a YE2703A d33meter and changed from 5.9 to 4.8pCN-1 with x contents. The spontaneous polarization Ps estimated from the hysteresis at ${\pm}1.2kV$ was ${\sim}0.3\;{\mu}C/cm2$ at room temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1995년도 추계학술대회 논문집
• /
• pp.122-125
• /
• 1995

Using metalorganic deposition technique, $La_2Ti_2O_{7}$ precursor solution was deposited on platinium coated SiO$_2$/SI(100) substrates by spin-coating process. Crystalline and crack-free films of ∼0.2$\mu\textrm{m}$ thickness were successfully fabricated on the above substrate from four different types of $La_2Ti_2O_{7}$ precursor solutions by proper heat treatment in the temperature range of $700^{\circ}C$∼$1200^{\circ}C$. Microstructure and X-ray diffraction analysis of $La_2Ti_2O_{7}$ thin film showed that the crystallization temperature and the preferred orientation of $La_2Ti_2O_{7}$ thin film were strongly dependent on the precursor used.