• 한국재료학회지
• /
• 제11권2호
• /
• pp.71-75
• /
• 2001

The reaction stability of nickel with side-wall materials of SiO$_2$ and Si$_3$N$_4$ on p-type 4"(100) Si substrate were investigated. Ni on 1300 $\AA$ thick SiO$_2$ and 500 $\AA$ - thick Si$_3$N$_4$ were deposited. Then the samples were annealed at 400, 500, 750 and 100$0^{\circ}C$ for 30min, and the residual Ni layer was removed by a wet process. The interface reaction stability was probed by AES depth Profiling. No reaction was observed at the Ni/SiO$_2$ and Ni/Si$_3$N$_4$, interfaces at 400 and 50$0^{\circ}C$. At 75$0^{\circ}C$, no reaction occurred at Ni/SiO$_2$ interface, while $NiO_x$ and Si$_3$N$_4$ interdiffused at Ni/Si$_3$N$_4$ interface. At 100$0^{\circ}C$, Ni layers on SiO$_2$ and Si$_3$N$_4$ oxidized into $NiO_x$ and then $NiO_x$ interacted with side-wall materials. Once $NiO_x$ was formed, it was not removed in wet etching process and easily diffused into sidewall materials, which could lead to bridge effect of gate-source/drain.

• 한국세라믹학회지
• /
• 제36권8호
• /
• pp.799-804
• /
• 1999

Composites of SiC-Si3N4 consisted of uniformly distributed elongated $\beta$-Si3N4 grains and equiaxed $\beta$-SiC grains were fabricated with $\beta$-SiC,. $\alpha$-Si3N4 Al2O3 and Y2O3 powders. By hot-pressing and subsequent annelaing elongated $\beta$-Si3N4 grains were grown via$\alpha$longrightarrow$\beta$ phase transformation and equiaxed $\beta$-Si3N4 composites increased with increasing the Si3N4 content owing to the reduced defect size and enhanced crack deflection by elongated $\beta$-Si3N4 grains and the grain boundary strengthening by nitrogen incorporation. Typical flexural strength and fracture toughness of SiC-40 wt% Si3N4 composites were 783 MPa and 4.2 MPa.m1/2 respectively.

• 한국세라믹학회지
• /
• 제39권3호
• /
• pp.217-221
• /
• 2002

Si and ${\alpha}-Si_3N_4$ powder mixtures added with 3 wt% $Y_2O_3$ were reacted under 5 MPa nitrogen pressure. The reaction products contained ${\alpha}-Si_3N_4$ particles with elongated shapes. Length and width of the elongated grains were the maximum when the starting powder mixture of 50 wt% Si - 47 wt% ${\alpha}-Si_3N_4$ and 3 wt% $Y_2O_3$ was used. Aspect ratio of the elongated grains were between 4.4 and 5. When the starting powder mixture contained 70 wt% Si, large particles with irregular shapes appeared. Meanwhile, the reaction did not proceed when the starting powder mixture contained 30 wt% Si and less. The SHS product was easy to crush and the elongated particles obtained from the starting powder mixtures of 40 wt% Si - 57 wt% ${\alpha}-Si_3N_4$ - 3 wt% $Y_2O_3$ and 50 wt% Si - 47 wt% ${\alpha}-Si_3N_4$ - 3 wt% $Y_2O_3$ were good candidates for the seeds.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
• /
• pp.151-151
• /
• 2001

• 전자공학회논문지A
• /
• 제29A권9호
• /
• pp.20-28
• /
• 1992

Dielectric thin film of N/O ($Si_{3]N_{4}/SiO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(dry & pyrogenic oxidation methods) of the top 7nm $Si_{3]N_{4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high resolution TEM, AES and SIMS. The insulating characteristics(I-V characteristics) were investigated by HP 4145, and the characteristics of TDDB (Time Dependent Dielectric Breakdown) were evaluated by using CCST(Current Constant Stress Time) method. In this experiment, The optimum oxidation condition for preparation of good insulating and TDDB characteristics of N/O film was pyrogenic oxidation at 85$0^{\circ}C$ for 30 minutes. The leakage current was reduced from 400pA to 7.5pA when SiO$_{2}$ film with thickness of 2nm was formed on the top of $Si_{3]N_{4}$ film by the pyrogenic oxidation method.

• 센서학회지
• /
• 제4권3호
• /
• pp.51-59
• /
• 1995

실리콘기판 위에 스트레스균형이 이루어진 150 nm-$Si_{3}N_{4}$/300 nm-$SiO_{2}$/150 nm-$Si_{3}N_{4}$ 구조의 평탄한 유전체 멤브레인을 제작하였다. 이 멤브레인의 스트레스 특성평가를 위하여 stress-deflection, stress-temperature 및 스트레인 진단용 시험패턴의 특성을 측정분석하였고, 중간에 있는 $SiO_{2}$층을 PECVD, LPCVD 및 APCVD방법으로 각각 증착하여 $SiO_{2}$층의 증착방법에 따른 적층 유전체박막의 스트레스특성에 대해서도 논의하였다. 대부분의 경우 적층 유전체 멤브레인에 인장스트레스가 존재하였으나, $SiO_{2}$층의 증착방법과 거의 무관하게 $1,150^{\circ}C$의 후습식산화로 실리콘기판에 의해 멤브레인에 나타나는 인장스트레스의 균형을 얻을 수 있었다. 온도변화에 따른 멤브레인에서의 스트레스 변화특성으로 부터 후산화처리를 하지 않는 경우에는 중간의 $SiO_{2}$ 층으로 APCVD방법에 의해 증착된 LTO가 더 적합한 것으로 나타났다.

• 대한기계학회논문집A
• /
• 제33권11호
• /
• pp.1233-1238
• /
• 2009

This study analyzed the characterization of high temperature strength of $Si_3N_4$ composite ceramics additive based on variations in the amount of nano colloidal $SiO_2$ added. Semi-elliptical cracks about 100 ${\mu}m$ length were obtained from a Vickers indenter using a load of 24.5 N. The results showed that the heat-treated smooth specimens with $SiO_2$ nano colloidal coating exhibited the highest bending strength at 0.0 wt% $SiO_2$ nano colloidal added, which is amounted to a 187 % increase over that of smooth specimen. Limiting temperature for bending strength of crack-healed zone for bending strength was about 1273 K. However, the bending strength of SSTS-3 and SSTS-4 was considerably increased while that of SSTS-1 and SSTS-2 was decreased at a temperature of 1,573K.

• 한국광학회지
• /
• 제3권4호
• /
• pp.244-251
• /
• 1992

$SiO_{2}$를 덮개층으로하는 $Si_{3}N_{4}$ rib 도파로의 $Si_{3}N_{4}-SiO_{2}$ 계면에 브래그격자를 제작하여 매립된 형태의 단일모우드 브래그필터 도파로를 설계하고 제작하였다. HF 완충용액을 사용하여 $Si_{3}N_{4}$ 코어층에 브래그격자를 식각하였으며 1nm까지 식각깊이를 제어하며 균일하게 식각할 수 있었다. 이러한 매립된 형태의 브래그필터는 그 특성이 소자표면의 오염에 영향을 받지 않는다. 브래그필터의 파장스펙트럼 측정에서 도파로의 모우드굴절률과 반사대역폭을 결정하고 이를 계산과 비교하여 논의하였다. 브래그필터의 도파코어층에 미세히터와 silicone rubber의 덮개층을 올려 필터파장을 가면할 수 있는 도파로 가변 필터소자를 제작하였다. 그 결과 브래그파장은 전류의 제곱에 비례하여 단파장 쪽으로 이동하였으며, 이동량은 10mA의 전류에 대해 0.41nm이다.

• 한국세라믹학회지
• /
• 제28권1호
• /
• pp.53-59
• /
• 1991

The reaction product between Si3N4 and ZrO2 has been studied by heat treatment of Si3N4-Zr(Y)O2 composite in high vacuum(<10-5 torr) and in air at $700^{\circ}C$. ZrN was formed after heat treatment in vacuum and easily oxidized after heat treatment in air. The amount of ZrN is related to the Y2O3 content dissolved in ZrO2. After the heat treatment in air the toughness increased and the spalling due to the oxidation of ZrN in specimen surface was observed. As a result, it is suggested that the formation of ZrN phase in Si3N4-ZrO2 composite enhance the toughness of the composite in an oxidation conditon.

• 한국진공학회지
• /
• 제1권1호
• /
• pp.183-189
• /
• 1992

텅스텐 실리사이드를 축적전극으로 하는 얇은 N/O(SiO2/Si3N4) 구조막의 특성을 다 결성 실리콘의 경우와 비교 평가하였다. 누설전류 및 항복전압이 향상되었고 축적용량은 감 소하였다. 용량 감소의 원인중의 하나는 텅스텐 실리사이드 상의 산화막 성장률이 다결성 실리콘 위에서 보다 빠른 것이고 둘째는 열처리에 따라 다결정 실리콘 내 도판트 불순물이 텅스텐 실리사이드를 통하여 외향확산하여 다결정 실리콘 내에 공핍층을 형성하게 되고 공 핍층 용량으로 인하여 축적용량이 감소하게 된다.