• 한국자기학회:학술대회 개요집
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• 한국자기학회 2009년도 정기총회 및 동계학술연구발표회
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• pp.136-137
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• 2009

• 한국재료학회지
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• 제5권6호
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• pp.650-656
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• 1995

이동통신용 고주파 표면탄성파(SAW) 필터를 36$^{\circ}$Y-X LiTaO$_3$압전기판과 IIDT 전극구조를 이용하여 제작하였다. 제작한 SAW 필터의 중심주파수는 주파수 응답 특성 측정 결과 설계한 중심주파수보다 낮아짐이 관찰되었다. 이러한 단점을 보완하고 미세한 주파수의 조절을 가능하게 하기 위해 SiN$_{x}$ 유전박막을 보호막으로 증착하여 이에 따른 주파수 특성 변화를 관찰하였다. SAW파장에 대한 SiN$_{x}$ 유전 박막의 두께비를 증가시킬수록 SAW 진행 속도가 증가하여, 제조한 필터의 중심주파수를 높게 이동시킬 수 있었다. 그러나 유전박막의 두께가 증가할수록 필터의 삽입손실이 증가하는 문제점이 존재하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권7호
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• pp.293-297
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• 2003

Silicon dioxide (SiO$_2$) layers were fabricated on Si$_3$N$_4$/SiO$_2$/Si layer structures by low pressure chemical vapor deposition (LPCVD). Potassium and aluminum were then coimplanted by implanting potassium ions with the energy of 100 ［keY］ and dose of 5x10$^{16}$ [cm￣$^2$］ and 1x10$^{17}$ [cm￣$^2$］ into an aluminum buffer layer on the SiO$_2$Si$_3$N4/SiO$_2$/Si structure. The pH, pNa, and pK ion sensitivities of the resulting layers were investigated and compared to those of as-deposited silicon dioxide layer. The pK-sensitivity of the silicon dioxide was enhanced by the K and Al coimplantation. On the contrary, the pH and pNa-sensitivities of the coimplanted silicon dioxides were quite lower than that of the as-deposited silicon dioxide.

• 한국진공학회지
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• 제6권S1호
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• pp.75-79
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• 1997

Optical and mechanical characteristics of $TiO-2, ZrO_2 \;and\; SiO_xN_y$ thin films prepared by ion assisted deposition (IAD) were investigated. IAD films were bombarded by Ar or nitrogen ion beam from a Kaufman ion source while they were grown in as e-beam evaporator. The result shows that the Ae IAD increases the refractive index and packing density of $TiO_2 films close to those of the bulk. For $ZrO_2$ films the Ar IAD increases the average refractive index decreases the negative inhomogeneity of refractive index and reverses to the positive inhomogeneity. The optical properties result from improved packing density and denser outer layer next to air The Ar-ion bombardment also induces the changes in microstructure of $ZrO_2$ films such as the preferred (111) orientation of cubic phase increase in compressive stress and reduction of surface roughness. Inhomogeneous refractive index SiOxNy films were also prepared by nitrogen IAD and variable refractive index of $SiO_xN_y$ film was applied to fabricate a rugate filter.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.112-117
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• 2004

$Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$(x=0.0, 0.3, 0.6, 1.0, 1.4) luminescent thin films have been grown on Si (100) substrates using pulsed laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, the surface morphology and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ films grown under optimized conditions have indicated that Si (100) is one of promised substrates for the growth of high quality $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ thin film red phosphor. In particular, the incorporation of Gd into $Y_2$ $O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with $Y_{1.35}$G $d_{0.60}$ $O_3$: $E^{3+}$, whose brightness was increased by a factor of 1.95 in comparison with that of $Y_2$ $O_3$:E $u^{3+}$ films.3+/ films.films.lms.

• Korean Chemical Engineering Research
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• 제47권4호
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• pp.424-429
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• 2009

물유리로 제조한 알칼리성 실리카-알루미나 합성모액에서 $Na_2O$, $SiO_2$, $H_2O$ 함량이 소달라이트의 결정화도와 입자크기에 미치는 영향을 조사하였다. x=2.5~7.5, y=1.4~3.0, z=140~400 범위에서 한 성분의 함량만 바꾸어 제조한 $x\;Na_2O{\cdot}y\;SiO_2{\cdot}Al_2O_3{\cdot}z\;H_2O$ 조성의 합성모액을 $140^{\circ}C$에서 2일간 수열 반응시켜 소달라이트를 합성하였다. $Na_2O$ 함량이 많아지면 소달라이트의 결정화도가 높아지나 입자는 작아졌다. 합성모액의 $SiO_2/Al_2O_3$ 몰비가 2 근처에서 소달라이트가 생성되었으며, 물의 함량이 달라지면 합성되는 제올라이트의 종류가 달라졌다. 이 합성조건에서는 $SiO_2/Al_2O_3$ 몰비가 2.0 근처이고, $Na_2O$ 함량이 많은 영역에서는 결정화도가 높은 소달라이트가 합성되었으며, 나트륨 이온의 구조유도체로서 효과로 입자 크기는 작아졌다.

• 한국진공학회지
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• 제10권2호
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• pp.182-188
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• 2001

폴리카보네이트 시트의 내마모성을 향상시키기 위하여 HMDSO 모노머와 산소를 사용하여 플라즈마 기상증착시킨 $SiO_xC_y$ 필름의 특성을 분석하였다. RF출력, 산소투입량, 수소투입량을 변화시키면서 각 증착조건에 따른 생성된 필름의 화학결합구조, 원소조성, 표면조도, 헤이즈 특성에 미치는 영향을 FTIR, XPS, AFM, Hazemeter를 이용하여 알아보았다. HMDSO와 산소를 사용한 박막의 증착은 100 nm/min이상의 높은 증착속도를 가졌고,증착실험에서 얻은 증착필름의 원소조성을 XPS를 이용하여 구한 결과, 종전의 다른 유기실리콘계 모노머를 사용했을때보다 박막에 존재하는 탄소잔류물을 효과적으로 감소시키는 것을 확인하였다. 또한, RF출력 200 Watt에서 산소가 100 sccm투입되었을 때 가장 우수한 헤이즈 특성을 보이는 막을 얻을 수 있었다. 본 연구로부터 HMDSO/$O_2$시스템이 탄소함량이 낮은 박막을 형성시키고 내마모도가 좋은 박막을 증착시키는데 효과적인 것을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.265-265
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• 2007

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

• Bulletin of the Korean Chemical Society
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• 제23권8호
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• pp.1121-1126
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• 2002

Two anhydrous crystal structures of fully dehydrated Cd2+ - and Cs+ -exchanged zeolite X, Cd32Cs28Si100Al92O384 (Cd32Cs28-X: a = 24.828(11) $\AA)$ and fully dehydrated Cd,sup>2+ - and Rb+ -exchanged zeolite X, Cd28Rb36Si100Al92O384 (Cd28Rb36-X: a = 24.794(2) $\AA$), have been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd3 at $21(1)^{\circ}C.$ The structures were refined to the final error indices, R1 = 0.058 and R2 = 0.065 with 637 reflections for Cd32Cs28-X and R1 = 0.086 and R2 = 0.113 with 521 reflections for Cd28Rb36-X for which I > $3\sigma(I)$. In the structure of Cd,sub>32Cs28-X, 16 Cd2+ ions fill the octahedral sites I at the centers of the double six rings (Cd-O = $2.358(8)\AA$ and O-Cd-O = $90.8(3)^{\circ}$ ). The remaining 16 Cd2+ ions occupy site II (Cd-O = $2.194(8)\AA$ and O-Cd-O = $119.7(4)^{\circ})$ and six Cs+ ions occupy site II opposite to the single six-rings in the supercage; each is $2.322\AA$ from the plane of three oxygens (Cs-O = 3.193(13) and O-Cs-O = $73.0(2)^{\circ}).$ Aboutten Cs+ ions are found at site II', $1.974\AA$ into the sodalite cavity from their three oxygen plane (Cs-O = $2.947(8)\AA$ and O-Cs-O = $80.2(3)^{\circ}).$ The remaining 12 Cs+ ions are distributed over site III' (Cs-O = 3.143(9) and O-Cs-O= $59.1(2)^{\circ})$. In the structure of Cd28Rb36-X, 16 Cd2+ ions fill the octahedral sites I at the center of the double-sixrings (Cd-O = 2.349(15) and O-Cd-O = $91.3(5)^{\circ}$ ). Another 12 Cd2+ ions occupy two different II sites (Cd-O = $2.171(18)/2.269(17)\AA$ and O-Cd-O = $119.7(7)/113.2(7)^{\circ}).$ Fifteen Rb+ ions occupy site II (Rb-O = $2.707(17)\AA$ and O-Rb-O = $87.8(5)^{\circ}).$ The remaining 21 Rb+ ions are distributed over site III' (Rb-O = $3.001(16)\AA$ and O-Rb-O = $60.7(4)^{\circ})$. It appears that the smaller and more highly charged Cd2+ ions prefer sites I and Ⅱ in that order, and the larger Rb+ and Cs+ ions, which are less able to balance the anionic charge of the zeolite framework, occupy sites II and II' with the remainder going to the least suitable site in the structure, site III'.The maximum Cs+ and Rb+ ion exchanges were 30% and 39%, respectively. Because these cations are too largeto enter the small cavities and their charge distributions may be unfavorable, cation-sieve effects might appear.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.47-48
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• 2007

본 실험에서는 MgO (99.999%)와 ZnO (99.999%)의 두가지 타겟을 사용한 RF co-스퍼터링법을 이용하여 p-type Si (100) 기판 위에 $Zn_{1-x}Mg_xO$ 박막을 증착 하였다. ZnO 타겟의 RF-power은 고정시키고 MgO 타겟의 RF-power를 조절함으로써 Mg 함량을 조절하였다. EDX분석을 통해 MgO RF-power의 증가에 따라 고용되는 Mg의 함량이 증가함을 알 수 있었다. 또한 MgZnO내 Mg 함량이 높아짐에 따라 c-축 격자상수가 감소하는 것을 XRD분석을 통해 알 수 있었고, MgO기반의 2차상은 형성되지 않았다. PL 측정을 통해 Mg함량이 증가 할수록 UV 영역의 파장의 강도는 감소하고 UV 파장의 위치는 blueshift되는 것을 관찰 할 수 있었다.