• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.107.2-107
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• 2003

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.106.2-106
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• 2003

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.160-160
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• 1997

• Bulletin of the Korean Chemical Society
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• 제31권11호
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• pp.3451-3453
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• 2010

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.50-50
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• 1999

• 한국재료학회지
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• 제17권2호
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• pp.115-120
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• 2007

Polycrystalline silicon (poly-Si) thin film transistors (TFTs) might be fabricated on the mica substrate and transferred to a flexible plastic substrate because mica can be easily cleaved into a thin layer. To overcome the adhesion and stress problem between poly-Si film and mica substrate, a buffer layer consisting of $SiO_x/Ta/Ti$ three layers has been developed. The $SiO_x$ layer is for electrical isolation, the Ti layer is for adhesion of $SiO_{x}$ and mica. and Ta is for stress relief between $SiO_x$ and Ti. A TFT was fabricated on the mica substrate by a conventional Si process and was successfully transferred to a plastic substrate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.167.2-167.2
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• 2014

In this work, ZnO shell on mesoporous $SiO_2$ ($ZnO/SiO_2$) was prepared by atomic layer deposition (ALD). Diethylzinc (DEZ) and $H_2O$ were used as precursor of ZnO shell. $ZnO/SiO_2$ sample was characterized by X-ray diffraction (XRD), N2 sorption isotherms, X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM) and Fourier-transform infrared spectroscopy (FT-IR). $ZnO/SiO_2$ showed higher adsorption capacity of MB than that of bare mesoporous $SiO_2$ and the adsorption capacities of $ZnO/SiO_2$ could be regenerated by UV exposure through the photocatalytic degradation of the adsorbed MB. This system could be used for removing organic dye from water by adsorption and reused after saturation of adsorption due to its photocatalytic regeneration.

• 암석학회지
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• 제9권4호
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• pp.205-210
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• 2000

암석중에 미립(직경 0.3mm내외)으로 존재하는 조암광물의 동정 및 결정학적인 배향도를 미소부 X선 회절분석기를 이용하여 측정하였다. 실험에 사용된 표품들은 $A1_{2}SiO_{5}$ 3상디형(규선석, 남정석, 홍주석)으로서 모든 표품들은 박편상의 것을 측정대상으로 하였다 측정에 이용된 X선 회절분석기는 3(${\omega}\;{\chi}\;{\phi}$)축 회전 측각기 및 위치민감형 검출기로 구성되어 있으며 X선원으로는 $CuK_{\alpha}$를 사용하였으며 직경 $50\;\mu\textrm{m}$의 시준기를 사용하였다. 광물 동정은 3(${\omega}\;{\chi}\;{\phi}$)축 회전 측정법에 의해 시행되었으며, 박편표면에 우세하게 나타나는 광물상의 격자면을 알아보기 위해 2(${\omega}\;{\phi}$)축 회전 측정을 실시하였고 2축 회전 측정법에 의해 우세하게 나타난 회절선에 대한 격자방향의 배향도와 극분포를 확인하기 위하여 X-선 극점도 측정을 시행하였다. 3축 회전 측정결과 측정대상 광물상에 대해 동정이 가능하였으며 2축 회전 측정과 X-선 극점도 측정결과 규선석(310), 남성석(200), 홍주석(122)극이 절단면, 즉 박편표면의 법선방향으로 잘 발달하고 있음을 확인할 수 있었다. 본 측정법은 편광현미경을 사용하여 식별이 용이하지 않은 미립조암광물의 동정과 배향도를 알아보는데 유용하게 사용될 수 있는 분석기법이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.258-258
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• 2008

Among several available high-k dielectrics the lanthanum zirconium oxide ($LaZrO_x$) system is very attractive as a buffer insulating layer. Because both lanthanum and zirconium atoms, the constituents of the $LaZrO_x$ thin film, have been considered to be thermally stable in contact with Si. The $LaZrO_x$ films were deposited by a sol-gel method. After the deposition, The $LaZrO_x$ films were crystallized at $750^{\circ}C$ for 30 minutes in $O_2$ ambient. PVDF-TrFE films were deposited on these $LaZrO_x$/Si structures using a sol-gel technique. The sol-gel solution was spin-coated on $LaZrO_x$/Si structures at 500 rpm for 5 sec and 2500 rpm for 15 sec. The deposited layer was dried at $165^{\circ}C$ for 30 min in air on a hot-plate. Then, we deposited Au electrode on PVDF-TrFE films using thermal evaporation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.311-312
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• 2005

By using 45$^{\circ}$ obliqued evaporation method with electron beam system, uniformly vertical liquid crystal (LC) alignment was achieved. And a high pretilt angles of about 2.5$^{\circ}$ were measured. Also, it was verified that there are no variations of pretilt angle as a function of $SiO_x$ thin film thickness 20nm and 50nm. A good LC alignment states were observed at annealing temperature of 250$^{\circ}C$. The high pretilt angle and the good thermal stability of LC alignment by 45$^{\circ}$ obliqued electron beam evaporation method on the $SiO_x$ thin film can be achieved.