• 대한금속재료학회지
• /
• 제50권8호
• /
• pp.569-573
• /
• 2012

In order to understand the difference in SiC deposition between the $CH_3SiCl_3-H_2$ and $C_3H_8-SiCl_4-H_2$ systems, we calculate the phase stability among ${\beta}$-SiC, graphite and silicon. We constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the $C_3H_8-SiCl_4-H_2$, and 5000 in the $CH_3SiCl_3-H_2$ system. This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the $C_3H_8-SiCl_4-H_2$ system and 3 for the $C_3H_8-SiCl_4-H_2$ system. Because the C/Si ratio is fixed at 1 in the $CH_3SiCl_3-H_2$ system while it can be variable in the $C_3H_8-SiCl_4-H_2$ system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the $C_3H_8-SiCl_4-H_2$ system.

• 한국세라믹학회지
• /
• 제41권3호
• /
• pp.235-242
• /
• 2004

원재료로서 Si, NH$_4$Cl, NaN$_3$, NaCl을 사용하고 SHS법을 이용하여 $\alpha$-Si$_3$N$_4$ 분말을 제조하였다. NH$_4$Cl과 NaN$_3$는 첨가제로서, NaCl은 희석제로서 사용되었고 반응기내 최초 $N_2$ 압력은 60 atm이었다. $\alpha$-Si$_3$N$_4$분말을 제조함에 있어, 첨가제의 종류와 조성, 희석제의 첨가량에 따른 반응성 및 생성물의 특성을 조사하였는데, 우선 $\alpha$-Si$_3$N$_4$ 분말의 제조를 위한 최적의 반응계를 조사하였고, 최적의 반응계에서 최적의 조성을 확립하였다. 최적의 반응계는 Si-$N_2$-additive(NH$_4$C+NaN$_3$)-diluent(NaCl)이었고, 이때 최적의 조성은 38wt%Si+22.5wt%NH$_4$Cl+27.5wt%NaN$_3$+l2wt%NaCl이었다. 이 조건에서 생성된 최고 $\alpha$-Si$_3$N$_4$의 분율은 96.5wt%이었으며 생성된 분말의 입형은 길이가 약 10 $mu extrm{m}$이고 직경이 약 1 $\mu\textrm{m}$인 일방향으로 길게 성장한 부정형의 fiber 형태였다.

• 한국세라믹학회지
• /
• 제41권12호
• /
• pp.907-914
• /
• 2004

[ $Si-NaCl-NH_4Cl-NaN_3$ ]계에서 자전연소에 의한 Si의 질화반응기구에 대하여 알아보았다. 희석제로서 첨가된 NaCl은 질화반응 초기에 Si의 용융에 따른 Si의 성장을 억제하여 완전한 질화반응에 도움을 주는 것으로 나타났다. 또한 $NH_{4}Cl$과 $NaN_3$는 반응과정 동안 서로 분해하고 결합하여 생성물로서 NaCl을 형성하였고, 이 과정에서의 발열반응은 시편을 예열함으로써 질화반응에 도움을 주었다. 본 반응계에서 주된 질화반응기구는 액상-기상 반응기구였다. 그리고 ${\alpha}-Si_{3}N_4$의 제조를 위한 최적의 펠렛 기공도는 $67-69%\$였다.

• 한국전기전자재료학회논문지
• /
• 제31권5호
• /
• pp.320-323
• /
• 2018

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at $400^{\circ}C$ using $SiH_4$ or $SiCl_4$ and $GeCl_4$ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using $SiCl_4$ and $SiH_4$ source were comparatively studied. SiGe films deposited using $SiCl_4$ source showed a lower growth rate and higher crystallinity than those deposited using $SiH_4$ source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

• 한국안전학회지
• /
• 제38권3호
• /
• pp.43-50
• /
• 2023

Silicone tetrachloride (SiCl₄) leak accidents cause enormous human and environmental damage because it is highly toxic. Some handling facilities use water curtains to reduce the impact range of SiCl₄. Although the water curtain is known as one of the most efficient technologies for post-release mitigation, its effect on reducing SiCl₄ concentration needs to be investigated scientifically and quantitatively. In this study, three-dimensional computational fluid dynamics (CFD) was used to investigate the physical and chemical effects of water curtains as a release-mitigation system for SiCl₄. SiCl₄ is released and dispersed five seconds prior to the operation of the water curtain. Once the water curtain works, the SiCl₄ reacts chemically with the water and its concentration decreases rapidly; it reaches an emergency response planning guidelines level 2 (ERPG-2) of 5 parts per million (ppm) at about 570 m. We observed, however, that the physical effect of water curtains on reducing SiCl₄ concentration is insignificant when the chemical effect is eliminated. These results are crucial since they can be a scientific and quantitative basis for the 'technical guidelines for estimating the accident affected range'. In order to protect the public from chemical accidents, more toxic gas mitigation technologies need to be developed.

• 대한화학회지
• /
• 제38권8호
• /
• pp.570-575
• /
• 1994

$\alpha$-Methylpyridine유도체1(a∼f)는 n-BuLi과의 반응에서 $\alpha$-methylenylpyridinium 염 3(a∼f)을 형성한다. 3(a∼f)와 $Me_3SiCl$ 및 $Me_2SiClCH(SiMe_3)CH_2tBu$반응에서 생성물 4(a∼f) 와 5(a∼f)을 형성한다. 화합물 4(a∼f)에 있는 규소원자와 결합된 methylene기의 수소원자는 화합물 4(a∼f)의 $CH_3$기 보다 n-BuLi과의 반응성이 큰 것으로 확인되었다.

• Bulletin of the Korean Chemical Society
• /
• 제20권4호
• /
• pp.422-426
• /
• 1999

The Grignard reactions of bis(chloromethyl)dimethylsilane (1) with trimethylchlorosilane (2) in THF give both the intermolecular C-Si coupling and intramolecular C-C coupling products. At beginning stage, 1 reacts with Mg to give the mono-Grignard reagent ClCH2Me2SiCH2MgCl (1) which undergoes the C-Si coupling reaction to give MC2Si(CH2SiMe3)2 3, or C-C coupling to a mixture of formula Me3SiCH2(SiMe2CH2CH2)nR1 (n = 1, 2, 3, ..; 4a, R1I = H: 4b, R1 = SiMe3). In the reaction, two reaction pathways are involved: a) Ⅰ reacts with 2 to give Me3SiCH2SiMe2CH2Cl 6 which further reacts with Mg to afford a Me2SiCH2Mel-SiCH2MgCl (Ⅱ) or b) I cyclizes intramolecularly to a silacyclopropane intermediate A, which undergoes a ring-opening polymerization by the nucleophilic attack of the intermediates I or Ⅱ, followed by the termination reaction with H2O and 2, to give 4a and 4b, respectively. As the mole ratio of 2/1 increased from 2 to 16 folds, the formation of product 3 increased from 16% to 47% while the formation of polymeric products 4 was reduced from 60% to 40%. The intermolecular C-Si coupling reaction of the pathway a becomes more favorable than the intramolecular C-C coupling reaction of the pathways b at the higher mole ratio of 2/1.

• 한국결정성장학회지
• /
• 제4권3호
• /
• pp.262-275
• /
• 1994

SiC/C계 경사기능재료를 화학기상증착법에 의하여 흑연기판위에 증착시키고자 하였다. 본 실험에서 경사기능재료의 최적증착조착조건은 온도 $1300^{\circ}C, H_2/[SiCl_4+CH_4]=10, CH_4/[$SiCl_4+CH_4]=0.5-0.6$이었다. 불연속적인 입력개시비의 변화에도 불구하고 연속적으로 조성이 변화된 경사기능재료를 얻을 수 있었으며, 명확한 계면이 존재하지 않는 연속적인 구조변화가 주사전자현미경 관찰로 확인되었다.

• 한국전기전자재료학회논문지
• /
• 제20권4호
• /
• pp.363-366
• /
• 2007

[ $Zn_2SiO_4:Mn$ ] green phosphors doped with $NH_4Cl$ and Al for PDP were synthesized by solid state reaction method. The luminescence of 532 nm in $Zn_2SiO_4:Mn$ phosphors was associated with $^4T_1{\to}^6A_1$ transition. Photoluminescence intensity of $Zn_2SiO_4:Mn$ doped with $NH_4Cl$ 15 mol% increased about two times as compared with that of $NH_4Cl$ non-doped sample. The color of the emission of Al-doped $Zn_2SiO_4:Mn$ phosphors changed to yellowish green.

• 한국세라믹학회지
• /
• 제32권6호
• /
• pp.685-696
• /
• 1995

The most important techniques in the synthesis of SiC/C function gradient material (FGM) are to control the SiC/C ratio and to obtain the moderate deposition rate. For these, various gas systems and flow rates were attempted and evaluated. It turned out that the CH4＋SiCl4＋H2 system was suitable for the deposition of SiC-rich layers, the C3H8＋SiCl4＋Ar system for the deposition of carbon-rich layers, and the C3H8＋SiCl4＋H2＋Ar system was good to deposit the layers between them.