• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.569-573
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• 2012

In order to understand the difference in SiC deposition between the $CH_3SiCl_3-H_2$ and $C_3H_8-SiCl_4-H_2$ systems, we calculate the phase stability among ${\beta}$-SiC, graphite and silicon. We constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the $C_3H_8-SiCl_4-H_2$, and 5000 in the $CH_3SiCl_3-H_2$ system. This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the $C_3H_8-SiCl_4-H_2$ system and 3 for the $C_3H_8-SiCl_4-H_2$ system. Because the C/Si ratio is fixed at 1 in the $CH_3SiCl_3-H_2$ system while it can be variable in the $C_3H_8-SiCl_4-H_2$ system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the $C_3H_8-SiCl_4-H_2$ system.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.235-242
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• 2004

Si, NH$_4$Cl, NaN$_3$, NaCl, $N_2$ were used as raw materials for preparation of $\alpha$-Si$_3$N$_4$ powder. NH$_4$Cl and NaN$_3$ were used as additives, and NaCl was used as a diluent. Initial $N_2$ gas pressure in the SHS reactor was 60 atm. In preparation of $\alpha$-Si$_3$N$_4$, the reactivity and the properties of the products were examined with the various kinds of additives and the content of diluent. At first, the optimum reaction system for the preparation of $\alpha$-Si$_3$N$_4$ is examined and then the optimum composition was examined in the optimum reaction system. The optimum reaction system was Si-$N_2$-additive(NH$_4$Cl+NaN$_3$)-diluent(NaCl) and the optimum composition was 38 wt%Si+50 wt%(NH$_4$Cl+NaN$_3$)+12 wt%NaCl. The maximum fraction of $\alpha$-phase of Si$_3$N$_4$ produced in this condition was 96.5 wt% and the shape of the $\alpha$-Si$_3$N$_4$ produced in this condition was an irregular fiber with a length of 10 ${\mu}{\textrm}{m}$ and a diameter of 1 ${\mu}{\textrm}{m}$.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.907-914
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• 2004

The nitridation mechanism of Si by SHS at $Si-NaCl-NH_{4}Cl-NaN_3$ system was investigated in this work. It was revealed that NaCl as a diluent was helpful to the perfect nitridation reaction by retarding the growth of Si particle resulted from the melting of Si at the initial stage of the nitridation reaction. And $NH_{4}Cl\;and\;NaN_3$ formed NaCl through decomposition and combination, and the preheating of pellet was helpful to the nitridation reaction in this process. The main nitridation mechanism of this system was liquid-gas reaction. The optimum porosity of the pellet for the nitridation of ${\alpha}-Si_{3}N_4$ was $67-69\%$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.320-323
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• 2018

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at $400^{\circ}C$ using $SiH_4$ or $SiCl_4$ and $GeCl_4$ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using $SiCl_4$ and $SiH_4$ source were comparatively studied. SiGe films deposited using $SiCl_4$ source showed a lower growth rate and higher crystallinity than those deposited using $SiH_4$ source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

• Journal of the Korean Society of Safety
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• v.38 no.3
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• pp.43-50
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• 2023

Silicone tetrachloride (SiCl₄) leak accidents cause enormous human and environmental damage because it is highly toxic. Some handling facilities use water curtains to reduce the impact range of SiCl₄. Although the water curtain is known as one of the most efficient technologies for post-release mitigation, its effect on reducing SiCl₄ concentration needs to be investigated scientifically and quantitatively. In this study, three-dimensional computational fluid dynamics (CFD) was used to investigate the physical and chemical effects of water curtains as a release-mitigation system for SiCl₄. SiCl₄ is released and dispersed five seconds prior to the operation of the water curtain. Once the water curtain works, the SiCl₄ reacts chemically with the water and its concentration decreases rapidly; it reaches an emergency response planning guidelines level 2 (ERPG-2) of 5 parts per million (ppm) at about 570 m. We observed, however, that the physical effect of water curtains on reducing SiCl₄ concentration is insignificant when the chemical effect is eliminated. These results are crucial since they can be a scientific and quantitative basis for the 'technical guidelines for estimating the accident affected range'. In order to protect the public from chemical accidents, more toxic gas mitigation technologies need to be developed.

• Journal of the Korean Chemical Society
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• v.38 no.8
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• pp.570-575
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• 1994

The metallation of $\alpha$-methylpyridine 1(a∼f) with n-BuLi produced $\alpha-methylenylpyridinium$ salt 3(a∼f) by elimination of butane. The trapping reactions of 3(a∼f) with $Me_3SiCl\;and\;Me_2SiClCH(SiMe_3)CH_2tBu$ produced only 4(a∼f) and 5(a∼f). The $\alpha$-hydrogen atom of silylated methylene group in 4(a∼f) is more reactive than unreacted $CH_3$ of 4(a∼f) itself and 1(a∼f) toward n-BuLi at low temperature in pentane medium.

• Bulletin of the Korean Chemical Society
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• v.20 no.4
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• pp.422-426
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• 1999

The Grignard reactions of bis(chloromethyl)dimethylsilane (1) with trimethylchlorosilane (2) in THF give both the intermolecular C-Si coupling and intramolecular C-C coupling products. At beginning stage, 1 reacts with Mg to give the mono-Grignard reagent ClCH2Me2SiCH2MgCl (1) which undergoes the C-Si coupling reaction to give MC2Si(CH2SiMe3)2 3, or C-C coupling to a mixture of formula Me3SiCH2(SiMe2CH2CH2)nR1 (n = 1, 2, 3, ..; 4a, R1I = H: 4b, R1 = SiMe3). In the reaction, two reaction pathways are involved: a) Ⅰ reacts with 2 to give Me3SiCH2SiMe2CH2Cl 6 which further reacts with Mg to afford a Me2SiCH2Mel-SiCH2MgCl (Ⅱ) or b) I cyclizes intramolecularly to a silacyclopropane intermediate A, which undergoes a ring-opening polymerization by the nucleophilic attack of the intermediates I or Ⅱ, followed by the termination reaction with H2O and 2, to give 4a and 4b, respectively. As the mole ratio of 2/1 increased from 2 to 16 folds, the formation of product 3 increased from 16% to 47% while the formation of polymeric products 4 was reduced from 60% to 40%. The intermolecular C-Si coupling reaction of the pathway a becomes more favorable than the intramolecular C-C coupling reaction of the pathways b at the higher mole ratio of 2/1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.262-275
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• 1994

SiC/C functionally gradient materials (FGM) were deposited on the graphite substrate by the chemical vapor deposition method. The best deposition conditions of SiC/C FGM were $1300^{\circ}C, H_2/[SiCl_4+CH_4]=10, CH_4/[$SiCl_4+CH_4]=0.5-0.6$. Despite of discontinuous input gas ratio change, the FGM of which composition was continuously changed could be obtained and continuous structural change without definite interfaces was confirmed by the SEM observation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.363-366
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• 2007

[ $Zn_2SiO_4:Mn$ ] green phosphors doped with $NH_4Cl$ and Al for PDP were synthesized by solid state reaction method. The luminescence of 532 nm in $Zn_2SiO_4:Mn$ phosphors was associated with $^4T_1{\to}^6A_1$ transition. Photoluminescence intensity of $Zn_2SiO_4:Mn$ doped with $NH_4Cl$ 15 mol% increased about two times as compared with that of $NH_4Cl$ non-doped sample. The color of the emission of Al-doped $Zn_2SiO_4:Mn$ phosphors changed to yellowish green.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.685-696
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• 1995

The most important techniques in the synthesis of SiC/C function gradient material (FGM) are to control the SiC/C ratio and to obtain the moderate deposition rate. For these, various gas systems and flow rates were attempted and evaluated. It turned out that the CH4＋SiCl4＋H2 system was suitable for the deposition of SiC-rich layers, the C3H8＋SiCl4＋Ar system for the deposition of carbon-rich layers, and the C3H8＋SiCl4＋H2＋Ar system was good to deposit the layers between them.