• Nuclear Engineering and Technology
• /
• v.5 no.1
• /
• pp.38-43
• /
• 1973

The spin-rotation constants of the proton and tile fluorine nucleus in C $H_4$, Si $H_4$, Ge $H_4$, C $F_4$, Si $F_4$ and Ge $F_4$ were determined experimentally by the molecular beam magnetic resonance method. From the Hamiltonian and the high field approximation, the quantized energy level is given by the following equation. W $m_{I}$ $m_{J}$=- $g_{I}$ $m_{I}$H- $g_{J}$ $m_{J}$H- $C_{av}$ $m_{I}$ $m_{J}$, where $c_{av}$ is one third of the trace of the C tensor. In the nuclear resonance experiment, the proton and the fluorine nuclear resonance curves consist of many unresolved lines given by v=- $g_{J}$H- $C_{av}$ $m_{I}$, and a Gaussian approximation is made to correlate $c_{av}$ to the experimentally obtained half-width of the resonance curve. In the rotational resonance experiment, the five resonance peaks as predicted by v=- $g_{I}$H- $c_{av}$ $m_{I}$, $m_{I}$=0, $\pm$1 and $\pm$2, were all observed. The magnitude of car was determined by measuring the frequency distance between two adjacent peaks. The sign of $c_{av}$ was determined by the side peak suppression technique. The technique is described, and the sign and magnitude of the spin-rotation constant cav are summarized as following: for C $H_4$ -10.3$\pm$0.4tHz(from the rotational resonance), for SiH +3.71$\pm$0.08kHz(from the nuclear resonance), for Ge $H_4$+3.79$\pm$0.13kHz(from the nuclear resonance), for C $F_4$, -6.81$\pm$0.08kHz(from the rotational resonance), for Si $F_4$, -2.46$\pm$0.06kHz(from the rotational resonance), and finally for Ge $F_4$-1.84$\pm$0.04kHz(from the rotational resonance).onal resonance).esonance).

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.17 no.2
• /
• pp.47-51
• /
• 2007

F-doped SiOC : H thin films with low refractive index were deposited on Si wafer and glass substrate by plasma enhanced chemical vapor deposition (PECVD) as a function of rf powers, substrate temperatures, gas rates and their composition flow ratios ($SiH_4,\;CF_4$ and $N_2O$). The refractive index of the F-doped SiOC : H film continuously decreased with increasing deposition temperature and rf power. As $N_2O$ gas flow rate decreased, the refractive index of the deposited films decreased down to 1.3778, reaching a minimum value at rf power of 180W and $100^{\circ}C$ without $N_2O$ gas. The fluorine content of F-doped SiOC : H film increased from 1.9 at% to 2.4 at% as the rf power was increased from 60 W to 180 W, which results in the decrease of refractive index.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1555-1558
• /
• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}c$-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_4$ Concentration$[F(SiH_4)/F(SiH_4)+F(H_2)]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c$-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c$-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_2H_6$ to $SiH_4$ gas. The solar cells with structure of Al/nip ${\mu}c$-Si:H/TCO/glass was fabricated with sing1e chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Journal of the Korean Ceramic Society
• /
• v.45 no.9
• /
• pp.561-566
• /
• 2008

Carbon fiber fabric-silicon carbide composites were fabricated by liquid silicon infiltration (LSI) process. The porous two-dimensional carbon fiber fabric performs were prepared by 13 plies of 2D-plain-weave fabric in a three laminating method, [0/90], [${\pm}45$], [$0/90/{\pm}45$] lay-up, respectively. Before laminating, a thin pyrolytic carbon (PyC) layer deposited on the surface of 2D-plain weave fabric sheets as interfacial layer with $C_3H_8$ and $N_2$ gas at $900^{\circ}C$. A densification of the preforms for $C_f-Si-SiC$ matrix composite was achieved according to the LSI process at $1650^{\circ}C$ for 30 min. in vacuum atmosphere. The bending strength of the each composite were measured and the microstructural consideration was performed by a FE-SEM.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.105-105
• /
• 1999

차세대 기억소자에서는 집접도의 증가, 고속화, 그리고 미세화에 따라 배선간으 최소선폭이 작아지고, 새로운 다층 배선기술이 요구되는 가운데 층간절연막의 재료와 형성기술은 소자의 특성을 향상시켜주는 중요한 요소로서 열적안정성, 저유전율, 평탄화특성 등에 핵심을 두고 연구되고 있다. 본 연구에서는 5인치 p-Si(100) 위에 FTES와 O2를 precursor로 하고 carrier gas를 Ar gas하여 ICP CVD 방법으로 저유전율의 Fluorocarbonated-SiO2 박막을 형성하였다. 0.1-1kW, 13.56MHz인 rf power를 사용하였으며, 증착은 RT에서 5~10분으로 하였다. 형성된 박막은 FTIR(fourier transform infrared), XPS(x-ray photoelectron spectroscopy), 그리고 ellipsopsometer 등을 이용하여 결합모드와 F농도, 균일도 등을 측정하고, I-V와 C-V 측정장치, 그리고 SERM(scanning electrion microscopy) 등을 이용하여 유전상수, 누설전류, dielectric breakdown voltage, 그리고 박막의 stepcoverage를 측정하였다. 제작된 박막의 신뢰성은 열처리에 따른 전기적 특성으로부터 조사하였다. 형성된 fluorocarbonated 박막 결합모드는 Si-F, Si-O, O-C, C-C와 C-F였고 O2:FTES:Ar 유량을 1sccm:10sccm:6sccm으로 하여 증착한 시료에서 유전율은 2.8이었으며, 누설전류밀도는 8$\times$10-9A/cm2, Breakdown voltage는 10MV/cm 이상, 그리고 stepcoverage는 91%로 측정되었다.

• Korean Journal of Materials Research
• /
• v.24 no.9
• /
• pp.474-480
• /
• 2014

Process conditions for the impregnation of polycarbosilane preceramic polymer into SiC-based composites were investigated. Two kinds of preceramic polymer (PCP) was impregnated into SiC-fiber fabrics with different solvents of n-hexane and divinylbenzene (DVB). Both microstructural observations and mechanical tests were conducted to evaluate the impregnation. The matrix phases were particulated in the case of hexane solvents. Apparent relative density of the matrix was about 78.8%. The density of matrix was increased to about 96.1-98.8% when the DVB was used; however, brittle fracture was observed during a bending test. The modulus of toughness was less than $0.74J/m^3$. The fabric impregnated with a mixed PCP-dissolved solution showed intermediate characteristics with relative high density of filling (apparent density of ~96.1%) as well as proper bending behavior. The modulus of toughness was increased to about $5.31J/m^3$. The composites developed by changing the precursor and solvent suggested the possibility of fabricating SiCf/SiC composites without a fiber to matrix interphase coating.

• Restorative Dentistry and Endodontics
• /
• v.35 no.1
• /
• pp.13-19
• /
• 2010

The purpose of this study was to compare the microshear bond strength of a self-etching primer adhesive to dentin prepared with different diamond points, carbide burs and SiC papers, and also to determine which SiC paper yield similar strength to that of dentinal surface prepared with points or burs. Fifty-six human molar were sectioned to expose the occlusal dentinal surfaces of crowns and slabs of 1.2 mm thick were made. Dentinal surfaces were removed with three diamond points, two carbide burs, and three SiC papers. They were divided into one of eight equal groups (n = 7); Group 1: standard diamond point(TF-12), Group 2: fine diamond point (TF-12F), Group 3: extrafine diamond point (TF-12EF), Group 4: plain-cut carbide bur (no. 245), Group 5: cross-cut carbide bur (no. 557), Group 6 : P 120-grade SiC paper, Group 7: P 220-grade SiC paper, Group 8: P 800-grade SiC paper. Clearfil SE Bond was applied on dentinal surface and Clearfil AP-X was placed on dentinal surface using Tygon tubes. After the bonded specimens were subjected to uSBS testing, the mean uSBS (n = 20 for each group) was statistically compared using one-way ANOV A and Tukey HSD test. In conclusion, the use of extrafine diamond point is recommended for improved bonding of Clearfil SE Bond to dentin. Also the use of P 220-grade SiC paper in vitro will be yield the results closer to dentinal surface prepared with fine diamond point or carbide burs in vivo.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
• /
• 2006.11a
• /
• pp.162-165
• /
• 2006

In this study, Liquid Phase Sintered SiC (LPS-SiC) was fabricated by hot pressing method with $\beta$-SiC powder whose a particle size is 30nm and less on the average in argon condition at 1780 and $1800^{\circ}C$ under 20MPa. Alumina ($Al_2O_3$), yttria ($Y_2O_3$) and silica ($SiO_2$) were used for sintering additives. To investigate effects of particle-size and temperature on $SiO_2$, LPS-SiC was fixed $Al_2O_3$, $Y_2O_3$ and then particle-size of $SiO_2$ were changed as two kinds. The system of particle-size and temperature on sintering additives which affects a property of sintering os well os the influence depending on particle-size and temperature of sintering additives were investigated by measurement of sintering properties. Such as measurement of sintering density, vikers hardness and observing of microstructure were investigated to make sure of the optimum condition which is about matrix of $SiC_f/SiC$ composites. Base on the composition of sintering additives, microstructure and sintering property correlation, the effect of particle-size of sintering additives are discussed. An experimental method to investigate the dynamic characteristics of bums in extreme environmental condition is established.

• Journal of the Korean Ceramic Society
• /
• v.47 no.6
• /
• pp.485-490
• /
• 2010

In our previous studies, continuous SiC fiber-reinforced SiC-matrix composites ($SiC_f$/SiC) had been fabricated by two different slurry infiltration methods: vacuum infiltration and electrophoretic deposition (EPD). 12 wt% of $Al_2O_3-Y_2O_3$-MgO with respect to SiC powder was used as additives for liquid-phase assisted sintering. After hot pressing at $1750^{\circ}C$ under 20 MPa for 2 h in Ar atmosphere, a high composite density could be achieved for both cases, whereas the problems such as large grain size and non-uniform distribution of liquid phase were observed, which was resulted in the relatively poor mechanical properties of composites. Therefore, efforts have been made to reduce the grain growth during the sintering, including the optimization for hot pressing condition and utilization of spark plasma sintering using a SiC monolith. Based on the results, spark plasma sintering was found to be effective method in decreasing the amount of sintering additive, time and grain growth, which will be explained in comparison to the results of hot pressing in this paper.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.9
• /
• pp.623-627
• /
• 1999

We report a new in-situ fluorine passivation method without in implantation by employing excimer laser annealing of $SiO_{x}F_{y}$/a-Si structure and its effects on p-channel poly-Si TFTs. The proposed method doesn't require any additional annealing step and is a low temperature process because fluorine passivation is simultaneous with excimer-laser-induced crystallization. A in-situ fluorine passivation by the proposed method was verified form XPS analysis and conductivity measurement. From experimental results, it has been shown that the proposed method is effective to improve the electrical characteristics, specially field-effect mobility, and the electrical stability of p-channel poly-Si TFTs. The improvement id due to fluorine passivation, which reduces the trap state density and forms the strong Si-F bonds in poly-Si channel and $SiO_2/poly-Si$ interface. From these results, the high performance poly-Si TFTs canbe obtained by employing the excimer-laser-induced fluorine passivation method.