• Applied Microscopy
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• v.46 no.1
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• pp.20-26
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• 2016

Our work on $Sc_2O_3-W$ matrix dispenser cathodes had been reviewed in this paper. The cathode with uniform distribution of $Sc_2O_3$ had been obtained using liquid-liquid doping method. The cathode had excellent emission property, i.e., the emission current density in pulse condition could reach over $35A/cm^2$. It was found that the cathode surface was covered by a Ba-Sc-O active substance multilayer with a thickness of about 100 nm, which was different from the monolayer and semiconducting layer in thickness. Furthermore, the observation results displayed that nanoparticles appeared at the growth steps and the surface of tungsten grains of the fully activated cathode. The calculation result indicated that the nanoparticles could cause the increase of local electric field strengths. We proposed the emission model that both the Ba-Sc-O multilayer and the nanoparticles distributing mainly on the growth steps of the W grains contributed to the emission. The future work on this cathode has been discussed.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.171.2-171
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.44.2-44
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.112.1-112
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• 2002

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.400-405
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• 1997

Lead scandium niobate powders were prepared by a molten salt synthesis method using KCl as a flux. Variations in phase formation and particle morphology were investigated for the temperature range $700^{\circ}C$ to $850^{\circ}C$. Pure $Pb(Sc_{1/2}Nb_{1/2})O_3$ perovskite phase was formed at $850^{\circ}C$ after 2hrs and the average particle size of powder was below 0.5 $\mu\textrm{m}$. The results are discussed with respect to DTA, X-ray diffraction, and microstructural characterization data.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.02a
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• pp.60-63
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• 2004

Sulfurization of rare-earth oxides R203 (R=Nd, Eu) using sulfurizing reagents, such as $H_2S$ and $SC_2$was examined for the sulfide magnetic separation of spent fuel. $EU_2O_3$was found to react with H$_3$S gas forming the mixture of $EU_2O_2S$ and EuS at 500 oC, while EuS was formed by $SC_2$ at 800 oC. In the case of the mixture of $R_2O_3$and $UO_2$, EuS and $ND_3S_4$ were formed as well as $EU_2O_2S$ and $Nd_2O_2S$ at 500oC in $H_2S$, though $UO_2$ remained unreacted.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.101.2-101
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.125-125
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.126-126
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• 1997

• Korean Journal of Materials Research
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• v.6 no.4
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• pp.395-400
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• 1996

반도체 소자가 점점 고집적회되고 고성능화되면서 Si 기판 세정 방법은 그 중요성이 더욱 더 커지고 있다. 특히 ULSI급 소자에서는 세정 방법이 소자 생산수율 및 신뢰성에 큰 영향을 끼치고 있다. 본 연구에서는 HF-last 세정에 UV/O3과 SC-1 세정을 삽입하여 그 영향을 관찰하였다. 세정 방법은 HF-last 세정을 기본으로 split 1(piranha+HF), split 2(piranha+UV/O3+HF), split 3(piraha+SC-1+HF), split 4(piranha+(UV/O3+HF) x3회 반복)의 4가지 세정 방법으로 나누어 실험하였다. 세정을 마친 Si 기판은 Total X-Ray Fluorescence Spectroscopy(AFM)을 사용하여 표면거칠기를 측정하였다. 또한 세정류량을 측정하고, Atomic Force Microscopy(AFM)을 사용하여 표면거칠기를 측정하였다. 또한 세정후 250$\AA$의 gate 산화막을 성장시켜 전기적 특성을 측정하였다. UV/O3을 삽입한 split 2와 split 4세정방법이 물리적, 전기적 특성에서 우수한 특성을 나타냈고, SC-1을 삽입한 split 3세정 방법이 표준세정인 split 1세정 방법보다 우수하지 못한 결과를 나타냈다.