• 분석과학
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• 제13권6호
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• pp.731-735
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• 2000

상용되는 난연제인 DBDPE-$Sb_2O_3$ 중 안티몬을 신속 정확하게 분석하기 위하여 가압 산 분해법을 이용하여 전처리하였다. DBDPE-$Sb_2O_3$ 시료를 가압 산 분해장치 내에서 $H_2SO_4:HCl$(1:2) 혼합산을 가하여 $220^{\circ}C$에서 2시간 동안 분해시킨 후 AAS를 이용하여 Sb를 정량하였다. 그 결과 99.6-99.8%의 회수율과 0.94-1.07%의 변동계수값을 얻었다. 이 전처리 방법을 실제시료에 적용하여 40.3과 36.3%의 Sb 함량을 구할 수 있었다.

• 대한화학회지
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• 제38권5호
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• pp.359-365
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• 1994

Hexapotassium undecahydrogen tetratungsto hexaantimonate(V) tetrahydrate 단결정의 X-선 회절 강도 데이타로부터 결정 구조를 정하였다. 결정학적 데이타는 다음과 같다. $K_6H_{12}[Sb_6W_4O_{36}]{\cdot}4H_2O$, Fw = 2360.62, tetragonal, I$4_1$/a, a = 10.799(1) $\AA$, c = 35.244(5) $\AA$, V = 4110.1(7) $\AA^3$, Z = 4, $D_x$ = 3.82 g$cm^{-3}$, $\mu(MoK\alpha)$ = 160.15 $cm^{-1}$, T = 293 K, final R = 0.0356 for 2400($F_0 > 3\sigma(F_0))$의 독립적인 회절 강도를 이용하여 최종 신뢰도 인자 R = 0.0356를 얻었다. $[H_{12}Sb_6W_4O_{36}]^{6-}$ 다중 음이온은 1개의 W원자, 2개의 Sb원자 및 9개의 산소 원자가 독립적이며 점군 $\bar4(S_4)$에 속한다. 이 다중 음이온은 열린 두 개의 Sb(3)$O_6-W(1)O_6-Sb(2)O_6-W(1)O_6-Sb(3)O_6$ 팔면체 오각 고리가 서로 직각으로 연결되어 만들어진 것이다. Sb-W, Sb-O, 및 W-O 원자간 거리의 범위는 각각 3.2304(9) - 3.2403(5) $\AA$, 1.745(8) - 2.334(6) $\AA$, 및 1.914(7) - 2.039(7) $\AA$이다.

• 한국결정성장학회지
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• 제20권1호
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• pp.30-34
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• 2010

중고온용 열전 소재로 우수한 특성을 나타내는 $CoSb_3$계 소재의 열전 소자 제조를 위해 방전플라즈마 소결법을 이용하여 소결 및 Cu-Mo 전극 소재와의 접합을 동시에 실시하였다. $CoSb_3$ 내부로의 Cu 확산을 방지하기 위해 Ti을 중간층으로 삽입하였으며 열팽창계수의 조절을 위해 Cu : Mo = 3 : 7 부피비 조성을 선택하였다. 삽입된 Ti과 $CoSb_3$는 $TiSb_2$ 이 차상을 형성하면서 접합이 진행되었지만 접합 온도 및 접합 시간의 증가에 따라 TiSb 및 TiCoSb 등의 상의 형성에 의해 접합 계면에서 균열이 발생되어 접합 특성을 악화시키는 것으로 밝혀졌다.

• 한국재료학회지
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• 제21권4호
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• pp.192-195
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• 2011

The electro-deposition of compound semiconductors has been attracting more attention because of its ability to rapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a costeffective manner (1). In particular, low band-gap $A_2B_3$-type chalcogenides, such as $Sb_2Te_3$ and $Bi_2Te_3$, have been extensively studied because of their potential applications in thermoelectric power generator and cooler and phase change memory. Thermoelectric $Sb_xTe_y$ films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containing different ratios of $TeO_2$ to $Sb_2O_3$. The stoichiometric $Sb_xTe_y$ films were obtained at an applied voltage of -0.15V vs. SCE using a solution consisting of 2.4 mM $TeO_2$, 0.8 mM $Sb_2O_3$, 33 mM tartaric acid, and 1M $HNO_3$. The stoichiometric $Sb_xTe_y$ films had the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentration and mobility of $5.8{\times}10^{18}/cm^3$ and $54.8\;cm^2/V{\cdot}s$, respectively. More negative applied potential yielded more Sb content in the deposited $Sb_xTe_y$ films. In addition, the hole concentration and mobility decreased with more negative deposition potential and finally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited $Sb_2Te_3$ thin film deposited at -0.15V vs. SCE at room temperature was approximately 118 ${\mu}V/K$ at room temperature, which is similar to bulk counterparts.

• 마이크로전자및패키징학회지
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• 제17권1호
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• pp.1-7
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• 2010

본 연구에서는 $430^{\circ}C$에서 Bi-10Cu-20Sb-0.3Ni 조성의 솔더 합금과 Cu간의 리플로루 솔더링 시 생성되는 계면 반응층을 분석하였고, 솔더링 시간에 따른 계면 반응층의 성장 속도를 측정하였다. 리플로우 솔더링 후 Bi-10Cu-20Sb-0.3Ni/Cu의 계면 반응층을 분석한 결과, $(Cu,Ni)_2Sb$ 및 $Cu_4Sb$ 금속간 화합물층, 그리고 Bi 조성과 $Cu_4Sb$ 상이 주기적으로 존재하는 아지랑이 형상층이 연속적으로 생성되었다. 또한 120 s까지의 솔더링 시간 영역에서는 계면 반응층의 총 두께가 솔더링 시간에 대해 직선적으로 증가하는 경향이 관찰되었다. 합금원소로 첨가된 Ni은 가장 두꺼운 $Cu_4Sb$ 반응층의 형성에 참여하지 않아 계면 금속간 화합물의 성장 속도를 억제시키는 작용을 나타내지 못했다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1959-1961
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• 1999

We prepared the $Ag[100\AA])/Sb_2S_3[3000\AA]$ films using the thermal evaporator. The films were exposed by the blue-pass filtered mercury lamp and the polarized He-Ne laser. We have investigated the dependence of the induced optical energy with Ag-doping and have observed the transmittance variation near the optical absorption edge with the light source. It was shown that the energy gap of this thin film was largely changed by exposing He-Ne laser, the light source of the near energy gap of this thin film. It is because of the structural change from Ag-doping. It is investigated that the dissolution, the diffusion, and the field effect of the Ag thin film generate the Ag spatial distribution.

• 약학회지
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• 제3권1호
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• pp.45-47
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• 1957

A paper chromatographical method is studied to detect As and Sb from a mixed sample applying the principle of Gutzeit's. After spoting the mixed $AsH_3$ sample on the $AgNO_3$ band of paper strip (6 mm $\times$ 300 mm of Whatman No.52 or Toyo No.2 filter paper), the strip is developed by ascending method using N-HCl solution as a developing soluvent. The color spot detection of As and Sb is done by exposing the dried chromatogram to $H_2S$ stream. According to the experiments, the detectable minimum range of As is 3 micrograms and that of Sb is 15 micrograms. The yellow phosphorous interfers to the color spot detection of As and Sb, so that, previously the most of yellow phosphorous from the sample should be removed out.

• 한국재료학회지
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• 제15권3호
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• pp.195-201
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• 2005

The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

• 한국진공학회지
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• 제2권2호
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• pp.227-235
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• 1993

$SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, and $Sb_{1-x}Bi_xSeI:Co$ single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by $E_g(x)=E_g(0)-Ax+Bx^2$. The impurity optical absorption peaks due to cobalt deped with impurity are attributed to the electron transitions between the split energy levels of $Co^{2+}$ and $Co^{3+}$ ions sited at $T_d$symmetry of the host lattice.

• Tribology and Lubricants
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• 제14권3호
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• pp.17-23
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• 1998

Friction materials with three different formulations containing different solid lubricants were investigated to study the role of lubricants on the friction performance. The three friction materials contained graphite 10 vol.%, graphite 7 vol.%+$MoS_2$ 3 vol.%, and graphite 7 vol.%+$Sb_2S_3$ 3 vol.%, respectively, with the same amount of other ingredients. Results of this work showed that each formulation with different lubricants had unique advantages and disadvantages. The friction materials containing graphite 7 vol.%+$MoS_2$ 3 vol.% and graphite 7 vol.%+$Sb_2S_3$ 3 vol.% showed better resistance to fading and improved friction stability compared to the friction materials containing graphite only as a lubricant. However, the friction materials with two lubricants (graphite+$MoS_2$ or $Sb_2S_3$) showed disadvantages on DTV generation and rotor wear.