• Title/Summary/Keyword: $S_N$ Transport

Search Result 382, Processing Time 0.027 seconds

Anti-diabetic Activity of Constituents of Lycii Fructus (구기자 성분의 혈당강하작용)

  • Kim, Kyoung-Soon;Shim, Sang-Hee;Jeong, Gi-Hwa;Cheong, Chun-Sik;Ko, Kwang-Ho;Park, Jeong-Hill;Huh, Hoon;Lee, Bong-Jin;Kim, Bak-Kwang
    • Biomolecules & Therapeutics
    • /
    • v.6 no.4
    • /
    • pp.378-382
    • /
    • 1998
  • In the previous screening on antidiabetic effect of Lycii fructus by glucose transport method using $N_2$-STZ diabeted rat model, each extracts showed the potent antidiabetic activity. We obtained three compounds isolated from the water fraction, EtOAc fraction and n-BuOH fraction of Lycii fructus in the present work and their structures were identified as 1-carboxy-N,N,N-trimethylmethanaminium hydroxide inner salt, 2,4(1H,3H)-pyrimidinedione and 3,3',4',5,7-pentahydroxyflavone-3-rutinoside . Among the constituents separated from Lycii fructus, 2,4(IH,3H)-pyrimidinedione, 3,3',4',5,7-pentahydroxyflavone-3-rutinoside and ascorbic acid were shown a remarkable antidiabetic effect.

  • PDF

Assessment of Perspective Development of Transport and Logistics Systems at Macro and Micro Level under the Conditions of Industry 4.0 Integration

  • Maiboroda, Olha;Bezuhla, Liudmyla S.;Gukaliuk, Andrii F.;Shymanska, Viktoriia;Momont, Tetiana;Ilchenko, Tetiana V.
    • International Journal of Computer Science & Network Security
    • /
    • v.21 no.3
    • /
    • pp.235-244
    • /
    • 2021
  • The change of the development of transport and logistics systems occurs with the active change of technology and the advent of the era of Industry 4.0. It requires modernization of approaches to the development of transport and logistics systems at the macro and micro levels. The present study aims to identify perspective directions of development and evolution, find out the existing obstacles in the integration of technological solutions of transport and logistics systems at the macro and micro levels. This study is based on a quantitative and qualitative methodology for assessing the level of integration of technologies into transport and logistics systems to study the prospects for their development at the micro level. Macroeconomic indicators of transport and logistics in the context of different regions of the world were used to quantify the development prospects. For a qualitative assessment of the development of the transport and logistics system, the case study method was used. The object of the study was selected logistics company Sensco Logistics Inc., Austin TX. At the macro level, countries with more innovative logistics sectors have stronger mechanisms for coordinating private sector activities. Simplification of administrative procedures of control and regulation by the public sector in order to facilitate trade between countries is a promising direction for the development of transport and logistics systems. Such reforms are more effective in developing a "rigid" transport infrastructure. The integration of Industry 4.0 technology solutions into the international logistics sector is defined by political and legal barriers, especially in developing countries. In low-income countries, hard and soft infrastructure reforms are hindering the development of logistics companies that provide transport services. This determines the national level of development of transport and logistics systems, and in general the global level of development of transport and logistics. In developed countries, the legal barriers to the development of new technological logistics are environmental requirements for the integration of technologies into the transport system. These trends are slowing down the development of International Logistics, which, compared to other industries, is slower to integrate Industry 4.0 technologies. This study combines macroeconomic factors that determine the prospects for the development of transport and logistics systems at the micro level.

Low-dimensional modelling of n-type doped silicene and its carrier transport properties for nanoelectronic applications

  • Chuan, M.W.;Lau, J.Y.;Wong, K.L.;Hamzah, A.;Alias, N.E.;Lim, C.S.;Tan, M.L.P
    • Advances in nano research
    • /
    • v.10 no.5
    • /
    • pp.415-422
    • /
    • 2021
  • Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi3NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi3NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi3NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

Optical properties of $HgGa_2S_4$ single crystal ($HgGa_2S_4$ 단결정의 광학적 특성)

  • Kim, H.G.;Kim, N.O.;Kim, B.C.;Choi, Y.I.;Kim, D.T.;Hyun, S.C.;Bang, T.H.;Lee, K.S.;Gu, H.B.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.05c
    • /
    • pp.47-52
    • /
    • 2004
  • $HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

  • PDF

Design and Implementation of Interworking Gateway with QoS Adaptation (QoS 적응 기능을 갖는 연동 게이트웨이의 설계 및 구현)

  • Song, Byeong-Hun;Choe, Sang-Gi;Jeong, Gwang-Su
    • Journal of KIISE:Computing Practices and Letters
    • /
    • v.5 no.5
    • /
    • pp.619-627
    • /
    • 1999
  • To support multimedia services between network domains with different environments, it is required to map the functionalities in many aspects. In this paper, we implemented interworking gateway which provides protocol conversion and QoS(Quality of Service) adaptation to interwork DAVIC services based on ATM(Asynchronous TRansfer Model )network and Internet AV services. The interworking gateway converts RTSP(Real-Time Streaming Protocol ) message into DSM-CC(Digital Storage Media Command & Control) messages to control the stream that is served in ATM network, and transmits data stream by using RTP(Real-Time Transport Protocol) The interworking gateway provides QoS adaptation functionalities by QoS monitoring and MPEG filtering to meet the variation of network bandwidth.

Property change of organic light-emitting diodes using a TCNQ (TCNQ를 사용한 유기 발광 소자의 특성 변화)

  • Na, Su-Hwan;Lee, Won-Jae;Hong, Jin-Woong;Chung, Dong-Hoe;Han, Wone-Keun;Kim, Tae-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.275-276
    • /
    • 2009
  • We have studied physical properties of organic light-emitting diodes (OLEDs) in a device with 7,7,8,8-tetracyanoquinodimethane (TCNQ). Since the TCNQ has a high electron affinity, it is widely used for a charge-transport and injection layer. And the TCNQ-derivatives have also been used to control the conductivity of the materials. It is known that a charge injection and transport in OLEDs with a TCNQ-derivative enhances a performance of the devices such as operating voltage and efficiency. To see how the TCNQ affects on the device performance, we have made a reference device in a structure of ITO(170nm)/TPD(40nm)/$Alq_3$(60nm)/LiF(0.5nm)/Al(100nm). And several type of devices were manufactured by doping TCNQ either in TPD or $Alq_3$ layer. The TCNQ layer was also formed in between the organic layers. N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD), tri(8-hydroxy quinoline) aluminium ($Alq_3$), and TCNQ layers were formed by thermal evaporation at a pressure of $10^{-6}$ torr. The deposition rate was $1.0{\sim}1.5\;{\AA}/s$ for TPD, and $1.0{\sim}1.5\;{\AA}$ for $Alq_3$. The LiF was thermally evaporated at a deposition rate of $0.2\;{\AA}/s$ successively. The device with TCNQ-derivative improved the turn-on voltage compared to the one without TCNQ-derivative.

  • PDF

Enhancement of Electrical Properties of Organic Light-Emitting Diodes Using F4-TCNQ Molecule as a Hole-Transport Layer (F4-TCNQ 분자를 정공 수송층에 이용한 유기 발광 소자의 전기적 특성 향상)

  • Na, Su Hwan;Lee, Won Jae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.30 no.11
    • /
    • pp.717-721
    • /
    • 2017
  • We studied the performance enhancement of organic light-emitting diodes (OLEDs) using 2,3,5,6-fluoro-7,7,8,8-tetracyanoquinodimethane ($F_4-TCNQ$) as the hole-transport layer. To investigate how $F_4-TCNQ$ affects the device performance, we fabricated a reference device in an ITO (170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm) structure. Several types of test devices were manufactured by either doping the $F_4-TCNQ$ in the TPD layer or forming a separate $F_4-TCNQ$ layer between the ITO anode and TPD layer. N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD), tri(8-hydroxyquinoline) aluminum ($Alq_3$), and $F_4-TCNQ$ layers were formed by thermal evaporation at a pressure of $10_{-6}$ torr. The deposition rate was $1.0-1.5{\AA}/s$ for TPD and $Alq_3$. The LiF was subsequently thermally evaporated at a deposition rate of $0.2{\AA}/s$. The performance of the OLEDs was considered with respect to the turn-on voltage, luminance, and current efficiency. It was found that the use of $F_4-TCNQ$ in OLEDs enhances the performance of the device. In particular, the use of a separate layer of $F_4-TCNQ$ realizes better device performance than other types of OLEDs.

Effect on the Characteristics of Organic Light-Emitting Devices due to the PTFE buffer layer (유기발광소자 특성에 미치는 PTFE 버퍼층의 영향)

  • Jeong, J.;Oh, Y.C.;Chung, D.H.;Chung, D.K.;Kim, S.K.;Lee, S.W.;Hong, J.W.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.07b
    • /
    • pp.1070-1073
    • /
    • 2003
  • We have studied the characteristics of organic light-emitting diodes(OLEDs) with the PTFE buffer layer. The OLEDs have been based on the molecular compounds, N,N'-diphenyl-N,N'-bis (3-methylphenyl)-1, 1'- biphenyl-4, 4'-diamine (TPD) as a hole transport, tris(8-hydroxyquinolinoline) aluminum (III) ($Alq_3$) as an electron transport and the Polytetrafluoroethylene (PTFE) as a buffer layer. The devices of structure were fabricated ITO/PTFE/TPD(40nm)/$Alq_3$(60nm)/Al( 150nm) to see the effects of the PTFE buffer layer in organic EL devices. The thickness of the PTFE layer varied from 0.5 to 10[nm]. We were measured Current-Voltage-Luminance Characteristics and Luminance efficiency due to the variation of PTFE thickness. the PTFE layer was reported that helped to enhance the hole tunneling injection and effectively impede induim diffusion from the ITO electrode. We have obtained an improvement of luminance efficiency when the PTFE thickness is 0.5[nm] is used. The improvement of efficiency of is expected due to a function of hole-blocking of PTFE in OLEDs.

  • PDF

Co 불순물을 첨가한 HgGa2S2 단결정의 광흡수 특성

  • Kim, N.O.;Kim, H.G.;Kim, B.C.;Min, W.K.;Jeon, H.S.;Shin, S.D.;Bang, T.W.
    • Proceedings of the KIEE Conference
    • /
    • 2004.07e
    • /
    • pp.55-57
    • /
    • 2004
  • $HgGa_{2}S_{4}Co^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the $HgGa_{2}S_{4}Co^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

  • PDF

Premium IP Multicast Technology (프리미엄 IP 멀티캐스트 기술)

  • Oh, Hyun-Woo;Cho, Kee-Seong;Kim, Sang-Ha
    • Proceedings of the IEEK Conference
    • /
    • 2006.06a
    • /
    • pp.117-118
    • /
    • 2006
  • Recently, the fusion of communication and broadcasting surfaces streaming service such as IPTV with killer application of BcN. In this paper, Premium IP multicast is called as transport service technology that transfer streaming service such as IPTV through integrated, controllable, maintainable network in order to guarantee end-to-end QoS to predefined person. It capacitates billing of multicast service instead of network operator guarantees high quality QoS to subscriber. So, network operators are able to create benefits and find benefit models. The other side, subscribers can use various high quality streaming services.

  • PDF