• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1500-1503
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• 2009

In this paper, we studied about atmospheric pressure remote plasma ashing of photoresist(PR), by using a modified dielectric barrier discharge(DBD). The effect of various gas combinations such as $N_2/O_2$, $N_2/O_2+SF_6$ on the changes PR ashing rate was investigated as a function of power. The maximum PR ashing rate of 1850 nm/min was achieved at $N_2$ (70 slm)/ $O_2$ (200 sccm) + $SF_6$ (3 slm). We found that as the oxygen and fluorine radical peaks were increased, the ashing rate is increased, too.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.170-171
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• 2008

The etching characteristics of Zirconium Oxide ($ZrO_2$) and etch selectivity of $ZrO_2$ to Si in HBr/$SF_6$ plasma were investigated. It was found that $ZrO_2$ etch rate shows a non-monotonic behavior with increasing both HBr fraction in $SF_6$ plasma, Source power, Bias Power, gas pressure. The maximum $ZrO_2$ etch rate of 54.8 nm/min was obtained for HBr(25%)/$SF_6$(75%) gas mixture. From these data, the suggestions on the $ZrO_2$ etch characteristics were made.

• Journal of Information Display
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• v.2 no.4
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.476-481
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• 1999

Characteristics of platinum dry etching were investigated in a cryogenic magnetized inductively coupled plasma (MICP). The problem with platinum etching is the redeposition of sputtered platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned platinum structure produces feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape [1]. The main object of this study was to investigate a new process technology for fence-free Pt etching As bias voltage increased, the height of fence was reduced. In cryogenic etching, the height of fence was reduced to 20% at-$190^{\circ}C$ compared with that of room temperature, however the etch profile was not still fence-free. In Ar/$SF_6$ Plasma, fence-free Pt etching was possible. As the ratio of $SF_6$ gas flow is more than 14% of total gas flow, the etch profile had no fence. Chemical reaction seemed to take place in the etch process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.288-291
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• 1996

The surface properties after plasma etching of TiW solutions using the chemistries of BCl$_3$ and SF$\_$6/ gases with varying mixing ratio have been investigated using X-ray photoelectron spectroscopy. The elements of C, Cl, F, O and S are observed on the etched TiW films. After plasma etching with SF$\_$6/ gas, Ti-S bond are detected on the samples and Ti-S bond makes a role of passivation layer that surpresses Ti-O formation. After plasma etching wish BCl$_3$ gas, Ti are easily removed but W are hardly etched. As a results, W/Ti are increased on the etched sample.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1277-1279
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• 1997

In this study, the mechanism underlying the corrosion problem have been investigated using X-ray photoelectron spectroscopy(XPS) and scanning electron microscopy(SEM), AES(Auger electron spectroscopy) In regard to the removal of Al-Cu corrsion, the subsequent treatment of the $SF_6$ plasma has also been completed. This work evaluated the effects of grain boundary on the AlCu after dry etching and the role of subsequent $SF_6$ plasma for the removal of AlCu corrosion.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.110-113
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• 2001

ECR(electron cyclotron resonance) 플라즈마 식각 장비를 이용하여 SF$_{6}$/Ar과 Cl$_2$/Ar 플라즈마 가스에 대한 Platinum (이하 Pt) 박막의 식각 특성을 연구하였다. Pt 박막의 경우 Cl$_2$ 가스 혼합물에 대한 식각 특성은 많이 보고가 되어 왔으나 상대적으로 Fluorine 계열의 가스 혼합물에 의한 시각 연구는 미비하였다. 본 연구에서는 SF$_{6}$/Ar과 Cl$_2$/Ar 플라즈마 가스를 이용한 Pt 박막의 식각 특성을 비교 분석하고 각각의 가스와 Pt 박막과의 반응을 분석, 식각 특성을 개선하고자 하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.2
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• pp.76-82
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• 2005

In this paper, a method for analyzing the thermal recovery characteristics of the nozzle of gas circuit breaker was described. In order to obtain thermal recovery characteristics, the transient simulation of SF6 arc plasma within the nozzle was carried out. In particular, the nozzle ablation was taken into account by simultaneously solving the PTFE concentration equation with the governing equations such as continuity, momentum and energy equation. After that, post arc current calculation was performed with the rate of rise of recovery voltage changed. From the calculated post arc current, it was possible to suggest the thermal recovery characteristics of the nozzle of gas circuit breaker.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.145-149
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• 2016

The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. $Cl_2/Ar$ ICP discharges showed higher etch rates than $SF_6/Ar$ discharges because of the higher volatility of $GaCl_x$ etch products than $GaF_x$ compounds. As the Ar ratio increases in the $Cl_2/Ar$ ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at $13Cl_2/2Ar$, 750W ICP power, 400W rf chuck power and 10 mTorr condition.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.37-42
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• 1992

Abstract-The ECR(E1ectron Cyclotron Resonance) plasma etcher was developed for process of manufacturing 16M164' DRAM and applied to poly-Si etching process. The etching rate and selectivity of poly-Si were investigated by changing the process factor of pressure gas and microwave power. The increasing power of microwave will have the trend of increasing the etching rate and selectivity of Oxide, and have suitable value process pressure at 6 mTorr. The increasing value of process gas SFdSF6+ Clz will cause the decrease of etching rate and selectivity, this is because the best process factor is not found.