• Proceedings of the Korean Nuclear Society Conference
• /
• 2005.10a
• /
• pp.209-210
• /
• 2005

• Proceedings of the KIEE Conference
• /
• 2006.04a
• /
• pp.96-98
• /
• 2006

A new ex-situ model to diagnose a plasma processing equipment was presented. The model was constructed by combining wavelet, scanning electron microscope, ex-situ measurement of etching profile, and neural network. The diagnosis technique was applied to a tungsten etching process, conducted in a $SF_6$ helicon plasma. The wavelet was used to characterize detailed variations of plasma-etched surface. The diagnosis model was constructed with the vertical wavelet component. For comparison, a conventional model was built by using the estimated profile data. Compared to the conventional model, the wavelet-based model, demonstrated a much improved diagnosis.

• Journal of Electrical Engineering and Technology
• /
• v.10 no.5
• /
• pp.2046-2051
• /
• 2015

Currently, most high-voltage gas circuit breakers (CBs) include asymmetrical geometries in the shield, the tank, the hot-gas exhaust, and the connection parts for bushings. For this reason, a 3-dimensional (3-D) analysis of the insulation capability is necessary, rather than a 2-D analysis. However, a 3-D analysis has difficulties due to the computational time and complex modeling. This paper presents a 3-D analysis considering the asymmetry in high-voltage gas CBs and a technique to reduce the calculation time. In the proposed technique, the arc plasma requiring the most computational time is first calculated by a 2-D analysis. Then, the results such as pressure, temperature, and velocity are input as a source for the 3-D analysis. This technique is applied to a 145kV self-blast-type CB and the analysis result exhibits good agreement with the experimental result.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.869-875
• /
• 1996

In this article the effects of process parameters of inductively coupled plasma etching with $SF_6$ /$N_2$/Ar mixture gas and mask materials on the etched profile of W were investigated. While the etched profile was improved by $N_2$-addition, low working presure, and reduced $SF_6$ flow rate, the etching selectity (W against SAL resist) was decreased. Due to the difficulty of W etching with single layer resist, sputter deposited $Al_2O_3$ film was used as a hardmask. Reduction of required EB resist thickness through $Al_2O_3$ mask application could reduce proximity effect during e-beam patterning, but the etch anisotropy was degraded by decreased sidewall passiviation effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.5
• /
• pp.345-348
• /
• 2012

The optical losses associated with the reflectance of incident radiation are among the most important factors limiting the efficiency of a solar cell. Therefore, photovoltaic cells normally require special surface structures or materials, which can reduce reflectance. In this study, nano-scale textured structures with anti-reflection properties were successfully formed on silicon. The surface of sicon wafer was etched by the inductively coupled plasma process using the gaseous mixture of $SF_6+O_2$. We demonstrate that the reflection characteristic has significantly reduced by ~0% compared with the flat surface. As a result, the power efficiency $P_{max}$ of the nano-scale textured silicon solar cell were enhanced up to 20%, which can be ascribed primarily to the improved light trapping in the proposed nano-scale texturing.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1356-1357
• /
• 2008

교류 펄스전압을 이용하여 글라이딩 아크 플라즈마 반응기에서 지구 온난화의 주요 원인으로 꼽히는 PFCs(Perfluoro compounds) 가스의 일종인 $SF_6$에 관한 분해 연구를 하였다. 가스의 농도를 조절하기 위하여 압축공기를 사용하였고 각각의 유량을 MFC를 통하여 조절하였다. 반응기 내의 양전극사이에 인가하는 전압을 아크가 발생하는 7kV$\sim$10kV 사이를 1kV 단위로 가변하였고 유량을 변화시켜가며 실험한 결과 높은 전압과 낮은 유량일 때 높은 분해율 특성을 보였다. 기본 방전 특성을 오실로 스코프를 통하여 관찰 분석하였다. 각 가스들의 분해율과 분해후 가스 성분분석은 글라이딩 아크 플라즈마와의 반응후 가스를 포집하여 FT-IR을 통하여 분석하였다.

• Applied Chemistry for Engineering
• /
• v.30 no.1
• /
• pp.108-113
• /
• 2019

In this study, the decomposition characteristics of perfluorinated compounds generated in semiconductor manufacturing process were investigated by using a high temperature plasma. The analysis results revealed that $CF_4$ and $SF_6$ showed the highest efficiency at 12.8 kW power, but no significant difference was observed at the power above. Experimental results showed that the maximum efficiency was obtained at the flow rate of about 14 mL/min and the treatment efficiency decreased as the flow rate increased or decreased with respect to the flow rate of 14 mL/min. As a result, the decomposition characteristics of perflurocompounds (PFCs) using a high temperature plasma could be grasped, and also the basis for the treatment of PFCs and greenhouse gases generated in the semiconductor manufacturing process could be obtained.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.25 no.11
• /
• pp.1342-1349
• /
• 1988

The dependence of the etch rates of differently doped poly-Si films on the gas composition, the chamber pressure and the RF power was investigated in detail. The highest anisotropy and the lowest CD loss were achieved at the $SF_6$-rich compositions, i.e., $Cl_2:SF_6$=17:33 (SCCM), in the $POCl_3$-doped poly-Si. The etch rates increased for n-type dopant (phosphorus), while decreased for p-type (boron) with increasing the doping levels irrespective of plasma parameters. And from the results of the activation of doped poly-Si films the active carrier concentrations as well as the doping concentrations were found to be responsible for the increase of the etch rate of the phosphorus-doped poly-Si.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.5
• /
• pp.231-237
• /
• 2001

Etch rates up to 120 nm/min for $Ta_{2}O_{5}$ were achieved in both $SF_{6}/Ar$ and $Cl_{2}/Ar$ discharges. The effect of ultraviolet (UV) light illumination during ICP etching on $Ta_{2}O_{5}$ etch rate in those plasma chemistries was examined and UV illumination was found to produce significant enhancements in $Ta_{2}O_{5}$ etch rates most likely due to photoassisted desorption of the etch products. The effects of ion flux, ion energy, and plasma composition on (Ba, Sr)$TiO_3$ etch rate were examined and maximum etch rate ~90 nm/min was achieved in $Cl_{2}/Ar$ ICP discharges while $CH_{4}/H_{2}/Ar$ chemistry produced extremely low etch rates (${\leq}10\;nm/min$) under all conditions.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.12
• /
• pp.47-52
• /
• 1996

Cl-based gas chemistry is generally used to etching for al alloy metallization. After the etching of Al alloy with Cl-based gas plasma, residual chlorine on Al alloy reacts with H$_{2}$O due to air exposure and results in Al corrosion. In this study, the corrosion phenomena of Al wer examined with XPS(X-ray photoelectron spectroscopy) and SEM (scanning electorn microscopy). It was confirmed that chlorine mainly existed at the grian boundary of Al alloy after plasma etching of Al alloy with cl-based gas chemistry and Al corrosion was largely generated at the grain boundary of Al alloy. And residual chlorine was passivated by sulfur and fluorine which were generated by SF$_{6}$ plasma. These effects of passivation reduced the Al corrosion due to air exposure.