• Journal of Satellite, Information and Communications
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• v.12 no.4
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• pp.120-124
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• 2017

This paper describes the product of search and rescue system with dynamic model. This spread spectrum system based new standard of COSPAS-SARSAT is results of RF signal generation and transmission. we will test performance evaluation which implement signal process adapting Dynamic model and we will adapt the CAF model using TDOA and FDOA relationship.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.237-238
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• 2008

The films of Vanadium tungsten oxide, $V_{1.85}W_{0.15}O_5$, were grown on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were 55, with a dielectric loss of 1.435, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were about -3.6%/K.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• Korean Journal of Microbiology
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• v.53 no.2
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• pp.97-102
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• 2017

Catechol type siderophore different from 2, 3-dihydroxybenzoic acid (DHB) was produced from Acinetobacter sp. B-W grown in medium containing L-glutamic acid as both carbon and nitrogen sole sources at $28^{\circ}C$. Optimal concentration of glutamic acid for siderophore production was 3% and production of siderophore was decreased above 3% glutamic acid. In previous report, siderophore, 2, 3-DHB was produced from strain B-W grown in medium containing glucose as carbon source and glutamic acid as nitrogen source. Rf value of siderophore produced from strain B-W grown in medium glutamic acid as both carbon and nitrogen sole sources at $28^{\circ}C$ was 0.32, while 2, 3-DHB was 0.84 in butanol-acetic acid-water (12:3:5) as developing solvent. Antioxidative activity of 2, 3-DHB was not detected in that siderophore produced from glutamic acid. Catechol nature of siderophore was detected by Arnow test. Although in iron-limited media optimal cell growth was identified at $36^{\circ}C$, significant quantities of siderophore were produced only at $28^{\circ}C$. Biosynthesis of siderophore was strongly inhibited by growth at $36^{\circ}C$. Production of siderophore was completely inhibited by $10{\mu}M\;FeCl_3$.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.69-72
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• 2000

기판과의 동시소성에 의한 고주파 MCM-C(Multi-Chip-Module-Cofired)용 저항을 제작하고 6 GHz 까지의 RF 특성을 측정하였다. 기판은 저온 소성용 기판으로서 총 8층으로 구성하였으며, 7층에 저항체 및 전극을 인쇄하고 Via를 통하여 기판의 최상부까지 연결되도록 하였다 저항체 Pastes, 저항체의 크기, Via의 길이 변화에 따라서 저항의 RF 특성은 고주파일수록 더욱 DC 저항값에서부터 변화되는 양상을 보였다. 내부저항의 등가회로를 구현한 결과, 저항은 전송선로, Capacitance 성분이 혼재되어 있는 것으로 나타났으며 전극의 형태에 따라 Capacitance 성분이 많은 차이를 나타내었다.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1618-1620
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• 1996

A variety of processing techniques have been reported for preparing high quality functional thin films, and one of the most successful techniques has been known to be the rf FTMS(facing targets magnetron sputtering) method. The rf FTMS has preferable advantages to reduce the resputtering effect when depositing thin films and efficiently to oxidize the grown films by oxygen radicals. The resulting optimum conditions were found to be the rf power 50 W and the substrate position of 20 mm.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.06a
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• pp.14-15
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• 2006

• Electronics and Telecommunications Trends
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• v.37 no.5
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.58-63
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• 1995

The effects of substrate temperature, RF power, and $NH_{3}/SiH_{4}$ gas flow ratio on the dielectric constant and optical bandgap of amorphous silicon nitride (a-SiNx:H) thin films prepared by PECVD method using RF glow discharge decomposition of $SiH_{4}$ and $NH_{3}$ gas mixtures have been studied. The dielectric constant and optical bandgap of a-SiNx:H thin films were greatly exchanged as by increasing substrate temperature, RF power, and $NH_{3}/SiH_{4}$ gas flow ratio. The dielectric constant of a-SiNx:H films was increased and optical bandgap of a-SiNx:H films was decreased as the substrate temperature was increased. When the substrate temperature, RF power, gas pressure, $NH_{3}/SiH_{4}$ gas flow ratio, and thickness were $250^{\circ}C$, 20 W, 500 mTorr, 10 and $1500\;{\AA}$, respectively, the dielectric constant, breakdown field and optical bandgap of a-SiNx:H film were 4.3, 1 MV/cm, and 2.9 eV, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.616-621
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• 1999

A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.