• Korean Journal of Materials Research
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• v.4 no.1
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• pp.90-96
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• 1994

ZnO thin films were deposited using Diethylzinc and $N_{2}O$ gas by plasma enhanced CVD (PECVD) at low substrate temperatures below $300^{\circ}C$. The effect of deposition parameters on the growth rate and the structural properties was determined at various deposition conditions. Crystallized ZnO thin films were successfully deposited even at $150^{\circ}C$ of substrate temperature. Above $200^{\circ}C$ c-axis oriented ZnO thin films, of which a standard deviation of X-ray rocking curve was less than $6^{\circ}$. were deposited on glass substrates. The variation of deposition rate showed different trends depending on substrate temperature and rf-input power. According to the deposition rate behavior as a function of substrate temperature, the transition points were observed resulting from crystallization of ZnO thin films. The activation energies for the deposition of ZnO thin films were 3.1KJ/mol and 1.9KJ/mol for the rf powers of 200W and 250W, respectively.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.323-330
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• 1989

Wear restance titanium carbonitride (TiCN) films were deposited on the SKH9 tool steels and WC-Co cutting tools by plasma assisted chemical vapor deposition (PACVD) using a gaseous mixture of TiCl4, CH4, N2, H2 and Ar. The effects of the deposition temperature and RF(Radio Frequency) power on the deposition rate, chlorine content and crystallinity of the deposited layer were studied. The experimental results showed that the stable and adherent films could be obtained above the deposition temperature of 47$0^{\circ}C$ and maximum deposition rate was obtained at 485$^{\circ}C$. The deposition rate was much affected by RF power and maximum at 40W. The crystallinity of the deposited layer was improved with increasing the deposition temperature and RF power. The TiCN films deposited by PACVD contained much chlorine. The chlorine content in the TiCN films was affected by deposition conditions and decreased with improving the crystallinity of the deposited layer. The deposited TiCN films deposited at the deposition temperature of 52$0^{\circ}C$ and RF power of 40W had an uniform surface with very fine grains of about 500$\AA$ size. The microhardness of the deposited layer was 2,300Kg/$\textrm{mm}^2$.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.1-7
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• 2002

We deposited $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thin-films on Pt/Ti/$SiO_2$/Si substrates using RF magnetron sputtering method. A Substrate temperature was fixed at room temperature, while working gas flow ratio and RF Power were changed from 90:10 to 60:40 and 50 W, 75 W respectively. Also after BST thin films were deposited, we performed annealing in oxygen atmosphere using Rapid Thermal Annealing. For capacitor application we deposited Pt using E-beam evaporator of UHV system. In a structural property study through XRD measurement we found that crystallization depends on annealing rather than working gas ratio or and RF Power. Electrical properties showed relatively superior characteristic on the annealed sample with 50 W of RF Power.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.117-122
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• 1994

The role of ZnS buffer layer not only suppresses chemical reactions between emission material and insulating material but also alters the luminescence and the crystallinity of the emission layer, if ZnS buffer layer was sandwiched between emission layer and insulating layer of electroluminescent device. In this research, we fabricated ZnS thin film with rf magnetron sputter system by varying rf power 100, 200W, substrate temperature 100, 150, 200, 250.deg. C and post-annealing temperature 200, 300, 400, 500.deg. C and analysed X-ray diffraction pattern, transmission spectra and cross section by SEM photograph for seeking the optimal crystallization condition of ZnS buffer layer. As a result, increasing the rf power, the crystallinity of ZnS thin film was improved. It was found that the ZnS thin film had better properties than anything else when fabricated with the following conditions ; rf power 200W, substrate temperature 150.deg. C, and post-annealing temperature 400.deg. C. ZnS thin film had the transmittance more than 80% in visible range. So it is suitable to use as a buffer layer of electroluminescent devices.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1088-1094
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• 1999

본 연구에서는 rf PECVD(13.56MHz)법을 이용하여 $CH_4$가스에 소량의 보조가스($O_2$와 $N_2$)를 혼합하여 a-C:H 박막을 얻었다. 이렇게 얻어진 박막의 증착속도는 rf power 증가에 따라서 증가하다가 200W에서는 다시 감소하였으며, 산소와 질소가스의 유량이 증가함에 따라 감소하였다. FT-IR분석으로 계산된 박막내의 수소함량은 rf power 증가와 산소 및 질소첨가량의 증가에 따라 감소하였다. 산소가스 첨가 시에는 C=O 결합이 생성되며, 질소가스 첨가 시에는 C=N 결합이 생성됨을 FT-IR 분석을 통하여 알 수 있었다. 이와 같이 산소와 질소를 보조가스로 첨가할 경우에 스퍼터링 효과로 박막내의 수소함량 감소와 더불어 a-C:H 박막의 구조 변화를 일으킬 수 있을 것으로 생각된다. Raman 분석결과 산소와 질소를 첨가함에 따라서 I(sub)D/I(sub)G비가 증가하였고, D line과 G line의 위치가 높은 파수 쪽으로 이동하였으며, D line의 폭은 넓어지는 반면에 G line의 폭은 감소됨을 보였다. 이것은 산소와 질소의 첨가로 박막내의 수소함량 감소, 결합각의 disorder 감소 및 micro-crystallite 흑연의 형성에 의한 것이라고 판단된다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.203-204
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• 2012

CIGS 단일 타켓을 RF 마그네트론 스퍼터링을 이용하여 파워별(20, 40, 60, 80W)로 Mo/SLG위에 증착하여 열처리를 실시하였다. 1step ($350^{\circ}C$), 1step ($550^{\circ}C$), 2step ($350^{\circ}C$, $550^{\circ}C$) 열처리 실시 후 XRD측정 결과 2step 80W에서 가장 좋은 결정성을 확인할 수 있었다. 또한 FE-SEM을 측정결과, 상대적으로 가장 큰 grain size(200nm)를 확인할 수 있었으며 박막의 표면 조도 또한 증가하는 것을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.718-721
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• 2004

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode$(Pt/TiN/SiO_2/Si)$ using RF sputtering method at various substrate temperature. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of $100\sim500[^{\circ}C]$. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of $-80\sim+190[^{\circ}C]$. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.282-286
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• 1997

Reactive ion etching (RIE) characteristics of InP in the $Cl_2$/ CH_4/H_2$ discharges was investigated, as a function of the rf power, substrate temperature and gas composition. It was observed that the etch rate increased as the rf power, sample temperature and/or $Cl_2$ gas concentration increased. Etch rate of about 0.9$\mu\textrm{m}$/min was obtained at the optimum condition of 150W rf power, $180^{\circ}C$ substrate temperature and $10Cl_2$ /$5CH_4/85H_2$ gas ratio. Polymer formation was completely suppressed by adding $Cl_2$ to the $CH_4$ /$H_2$ discharges.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.11
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• pp.508-511
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• 2003

In this paper, electrical characteristics of inductively coupled plasma in an electrodeless fluorescent lamp were investigated using a Langmuir probe with a variation of argon gas pressure. The RF output was applied in the range of 5 ∼ 50 (W) at 13.56 (MHz). The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of -100 (V) ∼+100 (V). When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from l0W to 30 〔W〕. Also, when the RF power was increased, electron density was increase. This implies that this method can be used to find an optimal RF rower for efficient light illumination in an electrodeless fluorescent lamp.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.05
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• pp.475-477
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• 1997

A new open structure of the bird-cage RF coil is proposed. By applying in-phase or out-of-phase voltage to the two terminals of the open bird-cage RF coil, desirable level of RF field uniformity has been achieved. Theoretical resonance frequencies of the RF coil has been obtained and compared with experimental ones. The quality factor of the open bird-cage RF coil has been found to be comparable to the one of the conventional RF coil.