• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.231-237
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• 2003

RE(Nd, Sm) elements doped (RE/Y)$_{1.8}$B $a_{2.4}$C $u_{3.4}$$O_{7-x}$ [(RE/Y)1.8] high $T_{c}$ superconductors were directionally grown by Top Seed Melt Growth(TSMG) process in air atmosphere. The (001)melt-textured N $d_{1.8}$B $a_{2.4}$C $u_{3.4}$ $O_{7-X}$(Nd1.8) seed crystals were used for achieving the c-axis alignment large grains perpendicular to surface of the samples. The (RE/Y)1.8 SEM micrographs of the melt-textured (RE/Y)1.8 samples revealed that the nonsuperconducting (RE/Y)211 inclusions are uniformly distributed in the superconducting (RE/Y)123 matrix except the region very close to the Nd seed crystal. The microstructure and superconducting properties were investigated by XRD, SEM, TEM and SQUID magnetometer. The Melt-textured (RE/Y)1.8 samples showed an onset $T_{c}$=91K and sharp superconducting transition. Also, the magnetization value of the (RE/Y)1.8 samples were compared with those of Y1.8 sample at 77 K. 77 K. 77 K. 77 K.K.

• The Korean Journal of Ceramics
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• 제5권3호
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• pp.211-216
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• 1999

Four different $\beta-Si_3N_4$ ceramics with silicon oxynitrides $[Y_10(SiO_4)_6N_2, Yb_4Si_2N_2O_7, Er_2Si_3N_4O_3, \;and La_{10}(SiO_4)_6N_2$, respectivley] as secondary phases have been fabricated by hot-pressing the $Si_3N_4-Re_4Si_2N_2O_7$ (Re=Y, Yb, Er, and La) compositions at $1820^{\circ}C$ for 2h under a pressure of 25 MPa. The high temperature strength and oxidation behavior of the hot-pressed ceramics were characterized and compared with those of the ceramics fabricated from $Si_3N_4-Si_2O_7$ compositions. The $Si_3N_4-Re_4Si_2N_2O_7$composition investigated herein showed comparable high temperature strength to those from $Si_3N_4-Re_2Si_2O_7$ compositions. Si3N4 ceramics from a $Si_3N_4-Y_4Si_2N_2O_7$ composition showed the highest strength of 877 MPa at $1200^{\circ}C$ among the compositions. All $Si_3N_4$ ceramics investigated herein showed a parabolic weight gain with oxidation time at $1400^{\circ}C$ and the oxidation products of the ceramics were $SiO_2$ and $Re_2Si_2O_7$. The $Si_3N_4-Re_4Si_2N_2O_7$ compositions showed inferior oxidation resistance to those from $Si_3n_4-Re_2Si_2O_7$ compositions, owing to the incompatibility of the secondary crystalline phases of those ceramics with $SiO_2$, the oxidation product of Si3N4.Si3N4 ceramics from a $Si_3N_4-Er_4Si_2N_2O_7$ composition showed the best oxidation resistance of 0.375mg/$\textrm{cm}^2$ after oxidation at $1400^{\circ}C$ for 102 h in air among the compositions.

• 한국표면공학회지
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• 제50권3호
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• pp.206-211
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• 2017

$BiNbO_4:RE^{3+}$ (RE = Dy, Eu, Sm, Tb) phosphors were prepared by solid-state reaction at $1100^{\circ}C$ and their structural, photoluminescent, and morphological properties were investigated. XRD patterns exhibited that all the synthesized phosphors exhibited a triclinic system with a dominant (210) diffraction peak, irrespective of the type of activator ions. The surface morphologies of rare-earth-ion-doped $BiNbO_4$ phosphors were found to depend strongly on the type of activator ions. The $Eu^{3+}$ and $Dy^{3+}$ doped $BiNbO_4$ phosphors revealed a strong red (613 nm) emission resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ and a dominant yellow (575 nm) emission originating from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$ respectively, which were the electric dipole transitions, indicating that the activator ions occupy sites of non-inversion symmetry in the $BiNbO_4$ phosphor. The main reddish-orange emission spectra of $Sm^{3+}$-doped $BiNbO_4$ phosphors were due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ (607 nm) magnetic dipole transition, indicating that the $Sm^{3+}$ ions were located at inversion symmetry sites in the $BiNbO_4$ host lattice. As for $Tb^{3+}$-doped phosphors, green emission was obtained under excitation at 353 nm and its CIE chromaticity coordinates were (0.274, 0.376). These results suggest that multicolor emission can be achieved by changing the type of activator ions incorporated into the $BiNbO_4$ host crystal.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.105-106
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• 2012

고상반응법을 사용하여 다양한 활성제 이온 (Eu, Sm, Tb, Tm, Dy)을 도핑한 $BaMoO_4$ 형광체 분말을 제조하였다. 합성한 형광체의 결정 구조는 활성제 종류에 관계없이 $2{\theta}=26.34^{\circ}$에서 주 피크를 갖는 정방정계이었다. 발광스펙트럼의 경우에 첨가한 활성제이온에 따라 다양한 색상을 발생하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.139-139
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• 1997

• 한국결정학회지
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• 제11권4호
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• pp.231-237
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• 2000

CMR Materials RE/sub 1-x/Ca/sub x/MnO₃(RE=La, Nd, A=Ca, Sr) were grown using the floating zone image furnace with halogen lamps as heat source. The growth condition was at 2∼10 mm/hr growth rate in air atmosphere, were 445∼50 rpm and 20∼25 rpm of rotation rate of feedrod and growing crystal, respectively. The grown crystals showed shiny black color and annealed at 1500℃ in a box furnace to release the residual stress during cooling. Characterization analyses of the crystal were carried out using XRD and SEM. The crystal structure of Nd/sub 0.7/Ca/sub 0.3/MnO₃ was analyzed with smart CCD XRD was lattice parameter of a=5.425(4)Å, b=5.434(4)Å, and c=7.712(5)Å, an orthorombic system with space group of pbnm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.8-11
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• 2001

In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

• 한국세라믹학회지
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• 제36권2호
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• pp.136-144
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• 1999

텅스템브론즈형 고주파 유전체의 $BaORe_2O_3TiO_2$(BLT)와 $BaO(Nd({0.77}Y_{0.23})_2O_34TiO_2(B(NY)T)$의 결정구조를 Rietveld 정밀화법으로 분석하였다. 양이온은 X-선 데이터로부터, 산소이온은 중성자 데이터로부터 정밀화한 'combined법'에 의해 가장 신뢰성이 높은 결정구조분석 결과를 얻었다. Mateeva 등이 처음 제시한 결정구조의 결정학적 모순점을 해결하였다. BaORe2O34TiO2(Re=La, Nd, Y) 유전체는 $3\times2$개의 페롭스카이트 블록과 이 블록사이에 형성된 4개의 pentagon-channel로 이뤄진다. Ti-O6팔면체는 tilted 및 변형된 구조를 갖고 있고, 이에 의해 같은 z-층에 있는 Ba 및 Re 이온의 변위되어 초격자(c$\approx$ 7.6$\AA$)를 형성된다. Re 이온반경이 작은 B(NY)T의 Ti-O6 팔면체가 tilting 및 변형이 큰 것으로 나타났다. 유전상수 $\varepsilon_{\gamma}$과 온도계수 $au_\varepsilon$은 BLT의 경우 각각 $109.5, -180 ppm/^{\circ}C$였고, B(NY)T 경우 $76, +40ppm/^{\circ}C$이었다. Re 이온 크기가 작은 시료의 $\tau$$\varepsilon$이 +값을 나타내었다. 복합 페롭스카이트에서 관찰되는 $\tau_\varepsilon$과 팔면체 tilting과의 관계를 본 텅스텐 브론즈 구조재료에서 고찰하였다.

• 한국표면공학회지
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• 제51권5호
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• pp.271-276
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• 2018

The effects of activator ion on the structural, morphological, and optical properties of $LaNbO_4:RE^{3+}$ (RE = Dy, Dy/Sm, Sm) phosphors were investigated. X-ray diffraction patterns exhibited that all the phosphors showed a monoclinic system with a main (112) diffraction peak, irrespective of the concentration and type of activator ions. The grain size showed a slightly decreasing tendency as the concentration of $Sm^{3+}$ ions increased. The excitation spectra of the $LaNbO_4:Dy^{3+}$, $Sm^{3+}$ phosphor powders consisted of a strong charge transfer band centered at 259 nm in the range of 220-290 nm and five weak peaks. The emission spectra of the $La_{0.95}NbO_4$:5 mol% $Dy^{3+}$ phosphors exhibited two intense yellow and blue bands centered at 575 nm and 479 nm respectively, which resulted from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ and $^4F_{9/2}{\rightarrow}^6H_{15/2}$ transitions of $Dy^{3+}$. As the concentration of $Sm^{3+}$ was increased, the intensity of the yellow emission band was gradually decreased, while those of orange and red emission bands centered at 604 and 646 nm began to appear and reached maxima at 5 mol%, and then decreased rapidly with further increases in the $Sm^{3+}$ concentration. These results indicated that white light emission could be realized by controlling the concentrations of the $Dy^{3+}$ and $Sm^{3+}$ ions incorporated into the $LaNbO_4$ host crystal.

• 한국세라믹학회지
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• 제37권2호
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• pp.158-163
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• 2000

Six different SiC ceramics with SiO2-Re2O3 (Re=Yb, Er, Y, Dy, Gd, Sm) as sintering additives have been fabricated by hot-pressing the SiC-Re2Si2O7 compositions at 1850$^{\circ}C$ for 2 hr under a pressure of 25 MPa. The room temperature strneth and the fracture toughness of the hot-pressed ceramics were characterized and compared with those of the ceramics sintered with YAG (Y3Al5O12). Five SiC ceramics (Re=Yb, Er, Y, Dy, Gd) investigated herein showed sintered densities higher than 94% of theoretical. Tthe SiC-Re2Si2O7 compositions showed lower strength and comparable toughness to those from SiC-YAG composition, owing to the chemical reaction between SiO2 and SiC during sintering. SiC ceramics fabricated from a SiC-Y2Si2O7 composition showed the best mechanical properties of 490 MPa and 4.8 MPa$.$m1/2 among the compositions investigated herein.