• Title/Summary/Keyword: $ReMnO_3$

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Electrical Properties of ReMnO3(Re:Y, Ho, Er) Thin Film Prepared by MOCVD Method (화학 기상 증착법으로 제조한 ReMnO3(Re:Y, Ho, Er) 박막의 전기적 특성)

  • Kim, Eung-Soo;Chae, Jung-Hoon;Kang, Seung-Gu
    • Journal of the Korean Ceramic Society
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    • v.39 no.12
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    • pp.1128-1132
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    • 2002
  • $ReMnO_3$(Re:Y, Ho, Er) thin films were prepared by MOCVD method available to non-volatile memory device with MFS-FET structure. $ReMnO_3$ thin films were deposited on the Si(100) substrate at 700${\circ}C$ for 2h. When the films were post-annealed at 900${\circ}C$ for 1h in air, the single phase of hexagonal $ReMnO_3$ thin films were detected. Ferroelectric properties of $ReMnO_3$ thin films were dependent on the degree of c-axis orientation in the single phase of hexagonal structure and remnant polarization (Pr) of $YMnO_3$ thin films with high degree of c-axis orientation was 105 nC/$cm^2$. Leakage current density was dependent on the grain size of microstructure and that of $YMnO_3$ thin films with grain size of 100∼150 nm was $10^{-8}$ A/$cm^2$ at applied voltage of 0.5 V.

Effects of Thermal Heat Treatment Process on the Ferroelectric Properties of ReMnO3 (Re:Ho, Er) Thin Films (ReMnO3(Re:Ho, Er) 박막의 강유전성에 미치는 열처리 공정의 영향)

  • Kim, Eung-Soo;Chae, Jung-Hoon
    • Journal of the Korean Ceramic Society
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    • v.42 no.11 s.282
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    • pp.763-769
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    • 2005
  • Ferroelectric $ReMnO_3$(Re:Ho, Er) thin films were deposited on Si(100) substrate by Metal-Organic Chemical Vapor Deposition (MOCVD). Crystallinity and electric properties of $ReMnO_3$(Re:Ho, Er) thin films were investigated as a function of thermal heat treatment process, CHP (Conventional Heat-treatment Process) and RTP (Rapid Thermal Process). $ReMnO_3$(Re:Ho, Er) thin films prepared by RTP showed higher c-axis preferred orientation and homogeneous surface roughness than those prepared by CHP. The remnant polarization of ferroelectric hysteresis loop of $ReMnO_3$(Re:Ho, Er) thin films was strongly dependent on the c­axis preferred orientation of hexagonal single phase, and the leakage current characteristics of thin films were dependent on the homogeneity of grain size as well as surface roughness of thin films.

Crystal Growth of $RE_{1-x}Ca_xMnO_3$(RE=La, Nd) by Floating Zone Method (부유대역용융법에 의한 $RE_{1-x}Ca_xMnO_3$ (RE=La, Nd)의 결정성장)

  • 정준기;조남희;김철진;이태근
    • Korean Journal of Crystallography
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    • v.11 no.4
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    • pp.231-237
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    • 2000
  • CMR Materials RE/sub 1-x/Ca/sub x/MnO₃(RE=La, Nd, A=Ca, Sr) were grown using the floating zone image furnace with halogen lamps as heat source. The growth condition was at 2∼10 mm/hr growth rate in air atmosphere, were 445∼50 rpm and 20∼25 rpm of rotation rate of feedrod and growing crystal, respectively. The grown crystals showed shiny black color and annealed at 1500℃ in a box furnace to release the residual stress during cooling. Characterization analyses of the crystal were carried out using XRD and SEM. The crystal structure of Nd/sub 0.7/Ca/sub 0.3/MnO₃ was analyzed with smart CCD XRD was lattice parameter of a=5.425(4)Å, b=5.434(4)Å, and c=7.712(5)Å, an orthorombic system with space group of pbnm.

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The Influence of Re2O3(RDy, Er) on the Electromagnetic Properties of Mn-Zn Ferrite (Re2O3(RDy, Er)가 Mn-Zn ferrite의 전자기적 특성에 미치는 영향)

  • 백승철;최우성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.2
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    • pp.178-183
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    • 2002
  • The effects of Dy$_2$O$_3$and Er$_2$O$_3$addition on the electromagnetic properties of Mn-Zn ferrite were investigated in the doping concentration range from 0.05 wt% to 0.25 wt%. All samples were prepared by standard fabrication of ferrite ceramics. The XRD patterns of sample were observed spinel and secondary phase. The densities of sample were showed nearly constant values. As the increased additive, electrical resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. Excess doped with Dy$_2$O$_3$ and Er$_2$O$_3$, those values decreased. The maximum electrical resistivity was observed with 0.15 we% and initial permeability was observed with 0.05 wt%. Magnetic loss decreased with additive and then increased in proportion to increased.

A Study on the High Frequency Properties of Mn-Zn ferrite with Re2O3(R=Dy, Gd, Ho) Addition (Re2O3(R=Dy, Gd, Ho)첨가에 따른 Mn-Zn ferrite의 고주파 특성에 관한 연구)

  • 최우성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.6
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    • pp.538-548
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    • 2003
  • We studied effects by Re$_2$O$_3$(R=Dy, Gd, Ho) addition on the properties of Mn-Zn ferrite. The doping concentration range from 0.05 wt% to 0.25 wt%. All samples were prepared by standard fabrication of ceramics. With increasing the rare earth oxides, specific density and initial permeability increased on the whole. But, the tendencies such as upper result had the measured value on limitation and characteristics saturated or decreased properties after that. In case of excessive addition of additive beyond some level, initial permeability properties of ferrite have gone down in spite of anomalous grain. With increasing the content of additive, both the real and imaginary component of complex permeability and the magnetic loss (tan$\delta$) increased. Because the increased rate of real component had higher than imaginary component, magnetic loss increased none the less for increasing the real component related with magnetic permeability. But, the magnetic loss of ferrite doped with the rare earth oxides was lower than that of Mn-Zn ferrite at any rate. The small amount of present rare earth oxides in Mn-Zn ferrite composition led to enhancement of resistivity in bulk, and more so in the grain boundary. It was seem to be due to the formation of mutual reaction such as between iron ions and rare earth element ions.

Magnetic and Magnetotransport Properties of (1-x) $La_{0.7}Sr_{0.3}MnO_3-xRE_2O_3$ (RE=La, Nd) Composites

  • Kim, Hyo-Jin;Kang, Young-Min;Yoo, Sang-Im
    • Proceedings of the Korean Magnestics Society Conference
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    • 2009.12a
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    • pp.192-192
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    • 2009
  • Magnetic and magnetotransport properties of (1-x) $La_{0.7}Sr_{0.3}MnO_3-xRE_2O_3$ (RE=La, Nd) (x = 0.025, 0.05, 0.075, 0.1, 0.2, 0.3) composite polycrystalline samples were systematically studied. Samples were prepared using conventional solid-state reaction. LSMO and $RE_2O_3$ react at high temperature and become chemically compatible. The ferromagnetic-paramagnetic transition temperatures ($T_c$) of the LSMO-$Nd_2O_3$ composite samples were decreased 313K~349K with increasing x, while the $T_c$ values of the LSMO-$La_2O_3$ composite samples were almost unaltered in the range of 355K~358K, representing that the ferromagnetism of LSMO might be more seriously degraded by Nd substitution on the ($La_{0.7}Sr_{0.3}$) site. However, LSMO-$RE_2O_3$ composite samples exhibit greatly enhanced low field magnetoresistance (LFMR) and dMR/dH value without an appreciable increase in its resistivity. Remarkably improved LFMR properties are attributed to LSMO grain boundaries acting as effective spin-dependent scattering centers. The relationship among the $RE_2O_3$ addition, microstructure, magnetic and magnetotransport properties will be discussed in this paper.

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Effects of Al2O3 on the Piezoelectric Properties of Pb(Mn1/3Nb2/3)O3-PbZrO3-PbTiO3 Ceramics (Pb(Mn1/3Nb2/3)O3-PbZrO3-PbTiO3 세라믹스의 압전특성에 미치는 Al2O3의 영향)

  • Kim Mi-Jung;Kim Jae-Chang;Kim Young-Min;Ur Soon-Chul;Kim Il-Ho
    • Korean Journal of Materials Research
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    • v.15 no.7
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    • pp.453-457
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    • 2005
  • Piezoelectric properties of $Pb(Mn_{1/3}Nb_{2/3})O_3-PbZrO_3-PbTiO_3$ ceramics were investigated with $Al_2O_3$ content $(0.0-1.0 wt\%)$. The constituent phases, microstructure, electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants were analyzed. Diffraction peaks for (002) and (200) planes were identified by X-ray diffractometer for all the specimens doped with $Al_2O_3$, indicating the MPB (morphotropic phase boundary) composition of tetragonal structures. The highest sintered density of $7.8 g/cm^3$ was obtained for $0.2wt\%\;Al_2O_3-doped$ specimen. Grain size increased by doping $Al_2O_3$ up to $0.3 wt\%$, and it decreased by more doping. Electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants increased by doping $Al_2O_3$ up to $0.2wt\%$, and it decreased by more doping. This might result from the formation of oxygen vacancies due to defects in $O^{2-}$ ion sites and the substitution of $Al^{3+}$ ions.