• Electrical & Electronic Materials
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• v.5 no.2
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• pp.198-206
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• 1992

(P $b_{1-x}$L $a_{x}$)[(S $b_{1}$2/S $n_{1}$2/) $Ti_{y}$ Z $r_{1-y}$] $O_{3}$(0.leq.x.leq.0.04, 0.25.leq.y.leq.0.40) 세라믹을 1250[.deg.C]에서 2시간동안 유지시켜 일반 소성법으로 제작하였으며 조성 및 L $a_{2}$ $O_{3}$첨가량에 따른 구조적, 압전적 특성을 관찰하였다. L $a_{2}$ $O_{3}$의 첨가량이 3-4[mol%]인 경우 La-rich의 pyrochlore상이 형성되었다. 시편의 평균결정립 크기는 1-2[.mu.n]의 크기를 나타내었으며 PbTi $O_{3}$조성이 증가함에 따라 다소 감소하는 경향을 나타내었다. 각 조성의 시편에 대해 PbTi $O_{3}$ 및 L $a_{2}$ $O_{3}$의 첨가량이 증가할수록 유전상수는 증가하는 경향을 나타내었으며 상전이 온도인 큐리온도는 PbTi $O_{3}$조성이 감소할수록 L $a_{2}$ $O_{3}$첨가량이 증가할수록 감소하는 경향을 나타내었다. 압전 전하계수 및 전기기계 결합계수는 L $a_{2}$ $O_{3}$첨가량 및 PbTi $O_{3}$조성에 따라 증가하였으며 L $a_{2}$ $O_{3}$가 4[mol%]첨가된 0.10PSS-0.40PT-0.50PZ 시편에서 각각 250x$10^{-12}$[C/N], 29.7[%]의 최대값을 나타내었다. 기계적 품질계수는 L $a_{2}$ $O_{3}$첨가량 및 PbTi $O_{3}$조성이 증가할수록 감소하는 경향을 나타내었으며 0.10PSS-0.25PT-0.65PZ 시편에서 138의 최대값을 나타내었다.다.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.201-204
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• 2007

A novel self-humidifying composite membrane for the proton exchange membrane fuel cell (PEMFC) at low humidity condition was developed. The $Pt/TiO_2 catalyst particles were synthesized via supercritical impregnation methods. Pt precursor was dissolved in supercritical carbon dioxide and impregnated onto $TiO_2$ particles. Pt precursors were platinum(II) acetylacetonate, Dimethyl(1,5-cyclooctadiene) platinum(II) and we controlled the ratio of Pt to $TiO_2$ The impregnated Pt precursor was converted to $TiO_2$ supported Pt nanoparticle under various reducing conditions. $TiO_2$ catalyst particles were dispersed uniformly into the Nafion solution, and then $Pt/TiO_2/Nafion$composite membrane was prepared using solution-cast method. The size, dispersion and content of the platinum had been characterized with Transmission Electron Micrograph (TEM), X-ray diffract ion (XRD) and Inductively Coupled Plasma - Atomic Emission Spectrometer (ICP-AES). The cell performance with the self-humidifying composite membrane was compared with a recast Nafion membrane under both humidified and dry conditions at 65 $^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.224-226
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• 2007

Hydrothermal 방법에 의해 준비된 $SnO_{2}$ 나노구조의 Pt의 구조적 특징을 알아보기 위해 X-ray diffraction (XRD), transmission electron microscopy (TEM) 을 통해서 확인할 수 있었다. 그리고 $Pt/SnO_{2}$ 나노구조 촉매의 cyclic voltammogram(CV) 통해서 전기화학적 특정을 알아보았다. XRD와 TEM 결과를 통해서 $SnO_{2}$의 나노결정성 입자의 크기는 121 nm임을 확인할 수 있었고 작은 입자가 서로 뭉쳐지면서 핵을 형성한 후 입자의 크기가 점차 증가한다는 것을 알 수 있었다. 그리고 Pt 촉매의 나노결정성 입자의 크기는 4 nm로 확인하였다. 또한 $SnO_{2}$에 Pt촉매의 결정성 입자의 구성이 잘 형성되었음을 확인하였고, 전기화학적 분석을 통해서는 에탄올 산화환원반응과 다결정 Pt의 존재를 확인하였다. 특히 에탄올에 대한 산화반응의 특성을 보이며, 이는 $SnO_{2}$의 에탄올산화반응용 지지체로써의 가능성을 의미한다.

• Proceedings of the KAIS Fall Conference
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• 2004.11a
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• pp.277-279
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• 2004

$300^{\circ}C$ 소성 Pt/MoO3가 수소를 흡착후 탈착하는 속도를 측정하였다. 두가지 흡착 속도를 나타내는 Pt/MoO3 촉매에서 탈착량은 흡착량과 탈착 온도의 증가에 비례하는 것을 알 수 있었다. 또한 X-Ray Photoelectron Spectroscope(XPS) 결과로부터 Pt와 MoO3간의 활성점에 존재하는 Cl의 존재가 수소 이동 속도를 결정하는 것으로 판단되었다.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.86-87
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• 2004

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.385-389
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• 2012

Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using $MnO_x$ thin films. The $V_{set}$ of the as-grown $MnO_x$ film ranged from 1 to 6.2 V, whereas the $V_{set}$ of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an $MnO_x$ film leads to an increase in $Mn^{4+}$ content at the $MnO_x$ film surface with a subsequent change in the $Mn^{4+}/Mn^{3+}$ ratio at the surface. This was attributed to the change in $Mn^{4+}/Mn^{3+}$ ratios at the $MnO_x$ surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of $MnO_x$ thin films. In addition, crystalline $MnO_x$ can help stabilize the $V_{set}$ and $V_{reset}$ distribution in memory switching in a Ti/$MnO_x$/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and $MnO_x$.

• Clean Technology
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• v.11 no.3
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• pp.123-128
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• 2005

Among various metal oxides semiconductors, $TiO_2$ is the most studied semiconductor for environmental clean-up applications due to its unique ability in photocatalyzing various organic contaminants, its chemical inertness, and nontoxicity. $TiO_2$, however, has a few drawbacks to be solved such as reactivity mainly working under ultraviolet irradiation (${\lambda}$ < 387 nm) and electron - hole recombination on $TiO_2$. In this study, to extend the absorption range of $TiO_2$ into the visible range and enhance electron - hole separation, we synthesized platinum (Pt) deposited $C-TiO_2$. The presence of Pt as an electron sink has been known to snhance the separation of photogenerated electron-hole pairs and induce the thermal decomposition. The characterization of as-synthesized $Pt-C-TiO_2$ was performed by Transmission Electron Microscopic (TEM), the Brunuer-Emmett-Teller (BET) method, X-ray Diffractometer (XRD), UV-vis spectrometer (UV-DRS), and X-ray Photoelectron Spectroscopy (XPS). In order to estimate the photocatalytic activity of the synthesized materials, the photoelectron Spectroscopy (XPS). In order to estimate the photocatalytic activity of the synthesized materials, the photodegradation experiment of an azo dye (Acid Red 44; $C_{10}H_7N=NC_{10}H_3(SO_3Na)_2OH$)was carried out by using an Xe arc lamp (300 W, Oriel). A 420 nm cut-off filter was used for visible light irradiation. From the results, Pt-deposited $C-TiO_2$ showed a far superior phothdegradation activity to Degussa P25, the commercial product under the irradiation of visible light and enhanced photocatalytic activity of visible-working $C-TiO_2$. This is a useful result into the application for the purification system of dye wastewater using visible energy of sun light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.889-892
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• 2000

We have investigated the Pt doping effect on structural and electrochemical properties of amorphous vanadium oxide film, grown by radio frequency magnetron sputtering. Room temperature charge-discharge measurements based on a half-cell with a constant current clearly indicated that the Pt doping could improve the cyclibility of V$_2$O$_{5}$ cathode film. Using glancing angle x-ray diffraction (GXRD) and high resolution transmission electron microscopy (HRTEM) analysis, we found that the Pt doping with l0W r.f. power induce more random amorphous structure than undoped V$_2$O$_{5}$ film. As the r.f. power of Pt increases, large amount of Pt incorporates into amorphous V$_2$O$_{5}$ and makes PtOx microcrystalline phase in amorphous matrix. This result suggests that the semicondcuting PtOx microcrystalline phase in amorphous matrix lead to a drastically faded cyclibility of 50W Pt doped V$_2$O$_{5}$ cathode film. Possible explanations are given to describe the Pt doping effect on cyclibility of vanadium oxide cathode film.de film.

• Journal of the Korean institute of surface engineering
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• v.48 no.2
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• pp.38-42
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• 2015

Atomic layer deposition (ALD) is essential for the fabrication of nanoscale electronic devices because it has excellent conformality, atomic scale thickness control, and large area uniformity. Metal thin films are one of the important material components for electronic devices as a conductor. As the size of electronic devices shrinks, the thickness of metal thin films is decreased down to few nanometers, and the metal films become non-continuous due to inherent island growth of metal below a critical thickness. So, fabrication of continuous metal thin films by ALD is fundamentally and practically important. Since ALD films are grown through self-saturated reactions between precursors on surface, initial growth characteristics significantly depend on the surface properties and the selection of precursors. In this work, we investigated ALD Pt on $TiO_2$ substrate by using trimethyl-methyl-cyclopentadienyl-Platinum ($MeCpPtMe_3$) precursor and $O_3$ reactant. By using $O_3$ instead of $O_2$, initial nucleation rate of ALD Pt was increased on $TiO_2$ surface, resulting in formation of continuous thin Pt films. Morphologies of ALD Pt on $TiO_2$ were characterized by using Scanning Electron Microscope (SEM) and Energy-Dispersive X-ray Spectroscopy (EDS). Crystallinity of ALD Pt on $TiO_2$ correlated with its growth characteristics was analyzed by X-Ray Diffraction (XRD).

• Journal of the Korean institute of surface engineering
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• v.56 no.6
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• pp.420-426
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• 2023

We prepared a highly sensitive hydrogen (H₂) sensor based on Indium oxides (In₂O₃) porous nanoparticles (NPs) loaded with Platinum (Pt) nanoparticle in the range of 1.6~5.7 at.%. In₂O₃ NPs were fabricated by microwave irradiation method, and decorations of Pt nanoparticles were performed by electroless plating on In₂O₃ NPs. Crystal structures, morphologies, and chemical information on Pt-loaded In₂O₃ NPs were characterized by grazing-incident X-ray diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, respectively. The effect of the Pt nanoparticles on the H₂-sensing performance of In₂O₃ NPs was investigated over a low concentration range of 5 ppm of H₂ at 150-300 ℃ working temperatures. The results showed that the H₂ response greatly increased with decreasing sensing temperature. The H₂ response of Pt loaded porous In₂O₃ NPs is higher than that of pristine In₂O₃ NPs. H₂ gas selectivity and high sensitivity was explained by the extension of the electron depletion layer and catalytic effect. Pt loaded porous In₂O₃ NPs sensor can be a robust manner for achieving enhanced gas selectivity and sensitivity for the detection of H₂.