• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.686-689
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• 2002

The application of the ultrasonic nozzle has been extended because it is possible atomization of liquid material. In this study, the characteristics of the ultrasonic nozzle and ceramic oscillator were investigated. The oscillator for the ultrasonic nozzle were made piezoelectric ceramic of $Pb[(Sb_{1/2}Nb_{1/2})_{0.035}-(Mn_{1/3}Nb_{2/3})_{0.065}-(Zr_{0.49}Ti_{0.51})_{0.90}]O_3$. The electromechanical coupling factor$(k_p)$ and mechanical quality factor$(Q_m)$ showed the values of 0.555, 1,214 respectively when the Zr/Ti ratio was 49/51. Moreover, this oscillator will have the temperature stability because it's curie temperature is $322[^{\circ}C]$. The driving current of ultrasonic nozzle showed the value of 80[mA] when the driving time was 10[min.]. Also, The surface temperature of ceramic oscillator showed $80[^{\circ}C]$ at driving time 10[min.] We knew that the ultrasonic nozzle had stabile driving above 10[min.].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.58-62
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• 2002

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ (PZT) thin films deposited on the Pt/Ti and Ru/$RuO_2$ bottom electrode by rf magnetron sputtering methode. Ru/$RuO_2$ bottom electrode deposited on the p-type wafer as Ru thickness by in-situ process. Our results show that all PZT films indicated perovskite polycrystalline structure with perferred orientation (110) and no pyrochlore phase is observed. A well-fabricated $RuO_2$/PZT/Ru(100nm)/$RUO_2$ capacitor showed a leakage current density in the order of $2.13{\times}10^{-7}A/cm^2$ as 100 kV/cm, a remanent polarization of 7.20 ${\mu}C/cm^2$, and a coercive field of 58.37 kV/cm. The results show that the new Ru/$RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.3
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• pp.428-435
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• 2002

Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.325-325
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• 2008

스크린 프린팅에 의한 압전 후막은 MEMS 공정을 이용하여 마이크로 펌프, 마이크로 벨브, 마이크로 센서, 마이크로 로봇 등 여러 초소형 기계부품에 응용되고 있으며, Sol-Gel, PLD를 이용해 증착된 막 등에 비해 수십${\mu}m$의 비교적 두꺼운 막을 형성시킬 수 있는 장점을 가지고 있다. 그러나 실리콘 기판을 사용하여 스크린 프린팅으로 형성된 압전 후막의 경우, 공정상 바인더를 연소시키는 과정을 거치게 되므로, 밀집된(Dense) 구조를 가지는 막을 만들기가 어렵다. 이로 인해 스크린 프린팅에 의한 후막은 전기적 특성 및 기계적 특성이 떨어지는 경향이 있다. 본 연구에서는 스크린 프린팅에 의한 압전 후막의 밀집된 구조 및 특성을 향상시키기 위해 0.01Pb$(Mg_{1/2}W_{1/2})$O3-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3-0.35PbTiO_3-0.23PbZrO_3$의 powder와 Attrition 밀링 처리된 powder를 비율별로 혼합하여 입자의 크기를 변화시켜 막의 충진 밀도를 향상시켰으며, 열처리 효과를 극대화시키기 위해 RTA(Rapidly Thermal Annealing)를 통해 열처리 하였다. Attrition 밀링에 의한 파우더를 각각 비율별로 100%, 50%, 25%로 혼합하여 만든 압전 세라믹 페이스트는 P-type(100)Si Wafer sample 위에 $1{\mu}m$의 하부전극용($1100^{\circ}C$) Ag 전극을 screen print하여 소결했다. 그리고 다시 전극이 형성된 Si wafer 위에 스크린 프린팅하고, 건조 한 후 RTA로 300초 동안 열처리 한 결과 밀집된 구조를 가지는 압전 후막을 제작 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.77-80
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• 1989

The aim of the study is to develope the processing technique of PZT-Polymer piezoelectric composite materials for ultrasonic transducer application such as biomedical probe and hydrophone. Piezoelectric composite of PZT and polymer with 1-3 connectivity patterns have been fabricated by dicing-filling method and extrusion forming method. In this study processing forming method. In the study processing steps by extrusion forming method in the preperation of PZT/polymer piezoelectric composites are described. The PZT powder used in the study is commercial powder which is prepared by mixing PbO, TiO$_2$ and ZrO$_2$. The binder, water and plasticizer are mixed with the PZT powder to form a slip. It is necessary to adjust the viescosity of slip according on the PZT rod diameters to be extruded. The electromechanical properties of the piezoelectric composites are characterized in terms of the thickness resonance mode. The pulse response characteristics by the ultrasonic transducer analyzer and osciloscope are evaluated.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1170-1175
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• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.158-158
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• 2009

기계적 에너지를 전기적 에너지로 변환하는 에너지 변환소자인 압전 세라믹스는 액추에이터, 변압기, 초음파모터 및 각종 센서로 응용되고 있으며, 그 응용분야는 크게 증가하고 있다. 최근에는 이러한 압전 소자를 앞으로 도래하는 ubiquitous, 무선 모바일 시대의 휴대용 전자제품, robotics 등의 분야에 적용하기 위하여 소형화 및 경량화를 구현하고자 다양한 연구가 진행되고 있다. 본 연구에서는 압전 특성이 우수한 PNN-PMN-PZT 삼원계 세라믹을 이용하여 압전 트랜스포머를 제작하고 전기적 특성을 평가하였다. 압전트랜스포머는 전왜-압전효과를 이용한 소전력용 고전압발생소자로서 종래의 권선형 트랜스포머에 비교해서 소형, 경량이면서 승압비가 높고 구조가 간단하므로 직류 고전압전원에 응용되고 있다. 압전트랜스의 이론적인 고찰은 Rosen 이후로 많은 연구자들에 의해서 보고되었다. 그런데 압전세라믹트랜스는 공진 시 강력한 에너지변환을 하기 때문에 재료의 물리적 특성이 매우 중요함에도 불구하고, 이러한 물리적 특성에 관한 연구는 거의 없었다. 따라서 본 연구에서는 물리적 특성과 전기적 특성의 상호 연관성을 고찰하고자 하였다. 압전트랜스용 재료는 전기기계결합계수($k_p$)와 기계적품질계수(Qm)가 높아야 한다. 전기기계결합계수를 높이기 위해서는 상경계 조성의 Pb(Zr,Ti)$O_3$[PZT]계 세라믹스가 가장 우수하다. 본 연구에서는 기계적 품질계수를 향상시키기 위해서 $Pb(Nn_{1/3}Nb_{2/3})_{0.06+x}(Mn_{1/3}Nb_{2/3})_{0.065-x}(Zr_{0.48}Ti_{0.52})_{0.875}0_3$계의 조성을 설계하여 압전특성을 평가하고 미세구조를 분석하였다. 또한 압전트랜스를 제작하여 입출력의 승압비 및 주파수 특성 등도 평가하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.134-136
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• 2001

In this paper, we investigated the electrical and piezoelectric characteristics of $Pb(Sb,Nb)O_3-Pb(Zr,Ti)O_3$ for piezoelectric transformer and actuator etc. Effect of $WO_3$ addition($0\;wt%{\sim}0.6\;wt%$) on the PSN-PZT ceramic was investigated. Anisotropic properties of electromechanical coupling factor and piezoelectric properties were proved to be varied with amount of $WO_3$ impurity and sintering temperature($1100{\sim}1300^{\circ}C$). The electromechanical coupling factor $k_p$ of 0.41 and the mechanical quality factor am of 1243 were obtained from the specimen with 0.6 wt% $WO_3$ addition sintered at $1100^{\circ}C$ Experimental results indicated that the PZT-PSN ceramics with $WO_3$ impurity can be effectively used for piezoelectric transformer and actuator. etc.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.189-190
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• 2005

본 논문에서는 카메라폰용 광학줌(Optical zooming)과 자동초점조절장치(Auto Focusing,AF)에 쓰일 초음파모터를 제작하였다. 초음파모터의 제작 및 시뮬레이션은 유한요소해석 프로그램인 ATILA 5.2 1(Magsoft co.)를 사용하여 디자인설계에 따른 구동특성을 고찰하였고 제작된 초음파모터는 한쪽 면이 없는 사작형의 탄성체를 제작하였으며 탄성체의 양쪽 다리에 각각 압전체를 부착하였다 또한 압전세라익의 조성은 0.9Pb$(Zr_{0.51}Ti_{0.49})O_3$ - 0.1Pb$(Mn_{1/3}Nb_{1/3}Sb_{1/3})O_3$ 의 조성으로 설계하였고 시편의 제조는 7-layer로 적층하였다. 제작된 압전세라믹의 치수는 6*2*0.35mm$^3$(길이*폭*두께)로 제작하였다. 또한 탄성체의 외형치수는 8*4*2mm$^3$로 제작하였으며 회전축의 지름은 2mm로 제작하였다. 인가전압과 공진주파수가 각각 20Vpp, 64kHz일 때 소비전력은 0.3[W]이며 회전속도는 500rpm 으로 측정되었다.