• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.187-191
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• 1995

Thin film of the (Pb$\_$1-x/La.sub x/)(Zr$\_$0.25/Ti/Sub 0.48/) O$_3$(x=0~13[at%]) were prepared by Sol - Gel method. Multi-layer PLZT thin films were fabricated by spin-coating on Pt/Ti/SiO$_2$/Si substrate. The crystallinity and microstructure of the films were investigated with the sintering condition. At the sintering temperature of of 600[$^{\circ}C$], the perovskite phase was dominat. PLZT(11/52/48)thin films sintered at 600[$^{\circ}C$], 1[hr] had good dielectric constant (1236), dielectric loss (2.2[%]), remanent polarization (1.38[${\mu}$C/$\textrm{cm}^2$] and coercive field(16.86[ kV/cm]) respectively.

• 한국진공학회지
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• 제4권S1호
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• pp.145-150
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• 1995

PZT thin films were fabricated on Pt/Ti/SiO2/Si substrates at $500^{\circ}C$ by ECR-PECVD for the application to the charge storage capacitor of ULSI DRAMs. Perovskite single phase PZT films were obtained by controling the film compositional ratio Pb/(Zr+Ti) close to 1. The anion concentrations in the PZT films were successfully controlled by adjusting the flow rates of each MO sources. Capacitance of a typical 94 nm thick PZT film prepared at $500^{\circ}C$ in this work was about 5.3 uF/$\textrm{cm}^2$, which corresponds to the equivalent SiO2 thickness of 0.65nm.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.907-912
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• 2005

Micro-patterns of $Pb(Zr_{0.53}Ti_{0.47})O_3$, PZT, thin films with a MPB composition were deposited on $Pt/Ti/SiO_2/Si$ substrate from molecular-designed PZT precursor solution by using self-assembledmonolayer(SAM) as a template. This method includes deposition of SAM followed by the optical etching by exposing the SAM to the UV-light, leading to the patterned SAM as a selective deposition template. The pattern of SAM was formed by irradiating UV-light to the SAM on a substrate and/or patterned PZT thin film through a metal mask for the selective deposition of patterned PZT or lanthanum nickel oxide (LNO) precursor films from alkoxide-based precursor solutions. As a result, patterned ferroelectric PZT and PZT/LNO thin film capacitors with good electrical properties in micrometer size could be successfully deposited.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.611-615
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• 2003

Eu-doped lead zirconate titanate(Pb$\sub$1.1/(Zr$\sub$0.6/Ti$\sub$0.4/)O$_3$; PZT) thin films on the Pt/Ti/SiO$_2$/Si substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Eu content. Eu-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Eu content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Eu content. The 0.5 mol% of Eu-doped PZT thin film showed improved fatigue characteristic comparing to the undoped PZT thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.313-316
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• 2003

The lead zirconate titanate, $Pb(Zr_{0:52}Ti_{0:48})O_3$, films of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$ thickness were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the rf magnetron sputtering method. The PZT films were annealed using by a rapid thermal annealing (RTA) method. The thickness dependence of the film structure, dielectric properties, Polarization-electric field hysteresis loops and capacitance-voltage characteristics were investigated over the thickness range of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$. According to the XRD patterns of the films, (110) peak intensity increases with film thickness increased. The increase of PZT films thickness leads to the decrease of the remanent polarization and the dielectric constant.

• The Korean Journal of Ceramics
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• 제4권4호
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• pp.352-355
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• 1998

Dense $ Pb(Zr, Ti)O_3(PZT)/Al_2O_3$ nanocomposites were prepared by the 28 GHz microwave heating method and conventional electric furnace sintering. Electrical and mechanical properties of the composites were investigated. The fracture strength of the PZT composites with 0.1vol% $Al_2O_3$ was significantly improved in both sintering methods. Smaller grain size and effective reinforcement of the PZT matrix by the second phase were considered to be responsible for the excellent fracture strength. Planar electromechanical coupling factor Kp of the composites sintered by 28GHz microwave heating was higher than that of the materical prepared by the conventional route. It seemed that the control of the reaction between PZT and $Al_2O_3$ by the microwave rapid sintering resulted in the high piezoelectric properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.253-253
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• 2007

압전 액츄에이터 및 초음파진동자의 응용범위가 넒어짐에 따라 변위량, 응력 등을 개선시키기 위해 전기기계결합계수 kp 및 압전 d상수가 종전보다 큰 재료가 요구되고 있으며, 초음파진동자나 압전 모터와 같이 마찰에 의한 열손실이 많이 발생하는 액츄에이터에 적용할 큰 기계적품질계수롤 가지는 저손실 압전 액츄에이터 및 초음파진동자용 재료가 필요한 실정이다. PZT계 세라믹스는 높은 유전상수와 압전특성으로 전자세라믹스분야에서 가장 널리 사용되어지고 있지만, $1200^{\circ}C$이상의 높은 소결온도 때문에 $1000^{\circ}C$ 부근에서 급격히 휘발되는 PbO로 인한 환경오염과 기본조성의 변화로 인한 압전특성의 저하가 문제시 되고 있다. $Pb(Ni_{1/3}Nb_{2/3})O_3$는 약 $-120^{\circ}C$정도의 큐리온도룰 가지는 강유전체로 Pb(Zr, Ti)$O_3$계 세라믹스에 치환 시 유전상수와 전기기계결합계수를 개선시키는 대표적인 성분이다. 따라서 본 연구에서는 저온소결 저손실의 적층형 압전 액츄에이터를 개발하기 위해 PMS-PMN-PZT계 세라믹스에 $Pb(Ni_{1/3}Nb_{2/3})O_3$ 세라믹스를 치환하고 $Li_2CO_3$와 $Na_2CO_3$ ZnO를 소결조재로 사용하여 저온소결 하였으며 PNN 치환량에 따른 결과를 관찰 하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1400-1401
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• 2006

In this study, in order to develop low temperature sintering piezoelectric ceramics for multilayer piezoelectric actuator, $PbSr(Mn_{1/3}Nb_{2/3})O_3-(Mg_{1/3}Nb_{2/3})O_3-(ZrTi)O_3$ ceramics were fabricated using $Na_{2}CO_{3}-Li_{2}CO_{3}$ as sintering aids and their piezoelectric and dielectric characteristics were investigated according to the sintering tempo rature. At the sintering temperature of $900^{\circ}C$, the density, electrom echanical coupling factor(kp), mechanical quality factor(Qm) and dielectric constant(${\varepsilon}r$) of specimen showed the optimum value of $7.730[g/cm^2]$, 0.552, 1134, 1492 and 330[pC/N], respectively.

• Ocean and Polar Research
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• 제26권2호
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• pp.231-243
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• 2004

Sequential extraction was carried out on twenty two subsamples of three ferromanganese crusts from three seamounts (Lemkein, Lomilik, and Litakpooki) near the Marshall Islands in the western Pacific. The extraction was designed to fractionate Fe-Mn crust forming elements into low defined groups: (1) exchangeable and carbornate, (2) Mn-oxide, (3) Fe-oxyhyd.oxide, and (4) residual fraction. X-ray diffraction result shows that target material were well removed by each extraction step except for CFA in phosphatized crusts generation. According to chemical analysis of each leachate, most of elements in the Fe-Mn crusts are bound with two major phases. Mn, Ba, Co, Ni, Zn, (Fe, Sr, Cu, and V) are strongly bounded with Mn-oxide $({\delta}-MnO_2)$ phase, whereas Fe, Ti, Zr, Mo, Pb, Al, Cu,(V, P, and Zn) show chemical affinity with Fe-oxyhydroxide phase. This result indicates that significant amount of Al, Ti, and Zr can not be explained by detrital origin. Ca, Mg, K, and Sr mainly occur as exchangeable elements and/or carbonate phase. Outermost layer 1 and inner layer 2 which are both young crusts generations are similar in chemical speciations of elements. However, some of Fe-oxyhydroxide bounded elements (Pb, Y, Mo, Ba, Al, and V) in phosphatized innermost layer 3 are released during phosphatization and incorporated into phosphate (Pb, Y, Mo, and Ba) or Mn-oxide phase (Al and V). Our sequential extraction results reveal that chemical speciations of elements in the hydrogenetic crusts are more or less different from interelemental relationship calculated by statistical method based on bulk chemistry.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.125-125
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• 2003

PZT(Pb(Zr,Ti)O3)는 우수한 강유전 특성을 가지기 때문에 FRAM (Ferroelectric Random Access Memory) 소자에 응용하기 위해 많은 연구가 진행되고 있다. 스퍼터에 의해 증착된 PZT는 처음에 pyrochlore상으로 존재하다가 후 열처리를 통해 이력 특성을 나타내는 perovskite상으로 천이된다. 일반적인 furnace열처리 방법은 고온에서의 장시간 열처리가 요구되고 Pb-loss현상이나 TiO2와 같은 이차상의 생성 그리고 하부 Pt전극의 roughness증가 및 crack과 같은 문제점이 있다. 최근 들어 후 열처리를 RTA로 이용하는 연구가 진행되고 있는데 이는 열처리 시간이 짧기 때문에 위와 같은 문제점을 개선할 수 있었다. 하지만 RTA방법 또한 어느 정도의 thermal budget이 존재하고 추가적 장비가 필요하며 기판의 전체적 가열공정이므로 다른 CMOS공정과 compatibility가 떨어진다. 따라서 본 실험에서는 위와 같은 문제를 해결하고자 노력을 집중하였고 이를 위한 새로운 열처리 방법을 개발하였다. 즉 Pt 하부전극에 전압(전류)을 인가하여 순간적으로 고온으로 결정화시키는 새로운 공정을 모색하였는데 이와 같은 방법은 열처리를 위한 추가적인 장비가 필요없고 국부적으로 순간적인 가열이기 때문에 glass기판에도 적합하며 RTA보다 승온시간 및 열처리 시간이 짧기 때문에 thermal budget도 줄일 수 있었다.