• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.338-339
• /
• 2005

본 연구에서는 $Fe_2O_3$를 첨가한 $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr_xTi_{1-x})O_3$ 세라믹스에서 Zr/Ti 비 변화에 따른 소결 및 압전, 유전특성을 조사하였다. $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3$+0.25Wt% $Fe_2O_3$ 계에서 Zr/(Ti+Zr)비(x)를 0.39에서 0.42까지 변화시킨 조성을 1100 - $1250^{\circ}C$ 온도에서 2시간 소결하여 이의 결정구조 및 미세조직을 분석하였고, 압전, 유전 특성 및 RAINBOW 액츄에이터로의 응용을 조사하였다. $1150^{\circ}C$에서 소결한 0.405 조성(x)에서 유전상수(${\varepsilon}r$) = 4669, 전기기계결합계수(kp) = 0.75, 압전상수($d_{33}$) = 810 pC/N의 우수한 특성 값을 나타내었으며, 닥터블레이드법에 의해 RAINBOW 액츄에이터를 제작하여 변위특성을 조사하였다.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.839-846
• /
• 1996

Epitaxial (La, Sr)$CoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$by pulsed laser deposition for ferroelectric field effect transistor. Epitaxial $LaCoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$ heterostructures exhibited 70$\mu C/cm^2$ and 17 $\mu C/cm^2$at a positively and negatively poled states, respectively. On the other hand, epitaxial (La, Sr)$CoO_3/Pb(Zr,\;Ti)O_3/LaCoO_3$heterostructures show the remnant polarization states opposite to the $LaCoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$ heterostructures. This indicates that the interface between (La, Sr)$CoO_3$ (LSCO) and $Pb(Zr, Ti)O_3(PZT)$ layers affects the asymmetric polarization remanence through electrochemical nature. The resistivity of $LaCoO_3$ (LCO) layer was found to be dependent on an ambient oxygen, primarily the ambient oxygen pressure during deposition. The resistivity of the LCO layer varied in the range of 0.1-100 $\Omega$cm. It is suggested that, with an appropriate resistivity of the LCO layer, the LCO/PZT/LSCO heterostructure can be used as the ferroelectric field effect transistor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.365-366
• /
• 2005

PZT films are the most intensively investigated because PZT has advantages such as low processing temperature and large remnant values. In this paper, the microstructure and electric properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ heterolayered thick films with Zr mole ranging from 30 to 70 % screen printed onto a alumina substrate were studied. $Pb(Zr_x,Ti_{(1-x)})O_3$ and $BaTiO_3$ powders were prepared by the sol-gel method. The $BaTiO_3$ powders were calcined at $700^{\circ}C$ for 2 hours. Structural properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ multilayered thick films were investigated. As a result of the X-ray diffraction (XRD) analysis, $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ exhibited a perovskite polycrystalline phase without pyrochlore phase or any preferred orientation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.169-170
• /
• 2005

본 연구에서는 초음파 센서에 응용 가능한 $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3+0.5Wt%$ $MnO_2$ 세라믹스에 Zr/(Ti+Zr)비를 0.37에서 0.41로 변화시킨 조성을 1175 $\sim$ 1200$^{\circ}C$ 온도에서 소결하여 이의 결정구조 및 미세조직을 분석하였고, 압전, 유전 특성을 고찰하였다. 본조성에서 x=0.385 조성에서 최대 유전상수 값 3490 이 나타났으며, 그 이상의 첨가에서는 감소하였다. 상경계 영역인 x=0.385 조성에서 $\varepsilon$r, $K_p$, $d_{33}$ 값이 최대값을 나타내었다. $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3+0.5Wt%$ $MnO_2$, 세라믹스에서는 kp 와 $d_{33}$ 는 Zr/(Ti+Zr)비 0.385조성까지 증가하였다가 그 이상 조성에서 감소하였다. $1175^{\circ}C$에서 2시간 소결한 x=0.385조성에서 $\varepsilon$r=3490, kp=0.71, Qm=476의 우수한 압전 특성을 나타내었다.

• Journal of the Korean Ceramic Society
• /
• v.34 no.6
• /
• pp.620-628
• /
• 1997

The possibility of the existence of a field-induced micro-macrodomain switching was proposed and examined using 9 mol % PbZrO3-doped 0.6Pb(Ni1/3Nb2/3)O3-PbTiO3 (PNN-PT) systems having rhombohedral symmetry at room temperature. the thermally depoled (freshly prepard) specimens prepared from the rhombohedral side of the system exhibited a relaxor behavior for the whole range of temperature examined (for T

• Journal of the Korean Ceramic Society
• /
• v.25 no.6
• /
• pp.694-698
• /
• 1988

Pb(Zr, Ti)O3-Pb(Co, Nb)O3 systems were investigated by x-ray diffraction method. System contains rhombohedral, tetragonal, and pseudocubic structures at room temperature. Crystal symmetry was changed from 4-fold symmetry to 3-fold symmetry by substituting Pb(Co1/3, Nb2/3)O3 ; PCN, to Pb(Zr0.52, Ti0.48)O3 ; PZT. As the substituted PCN concentration was increased, an increase in a-axis direction and a decrease in c-axis in the perovskite structure were occurred simultaneously, so that the crystal symmetry was changed into such way. In the higher sinteringtemperatures, the unit cell distortions occurred rather in the lower substitution range of PCN. The ferroelectric properties were maximized at the region that tetragonal and rhombohedral or pseudocubic structures were coexist.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2004.10a
• /
• pp.99.1-99.1
• /
• 2004

• The Korean Journal of Ceramics
• /
• v.4 no.3
• /
• pp.199-203
• /
• 1998

$Pb(Zr, Ti)O_3$ (Pb:Zr:Ti=1:0.52:0.48) thin films were prepared on single crystal MgO(100) substrates by dipping-pyrolysis process using a solution of constituent metal naphthenates as starting materials. The solution was spin-coated onto substrate and the precursor films were pyrolyzed at $200^{\circ}C$ in air or at $200^{\circ}C$ in argon for 1, 2, 5 and 24h, followed by final heat treatment at $750^{\circ}C$. For all the films, highly (h00)/(00l)-oriented Pb$Pb(Zr, Ti)O_3$ thin films with smooth surfaces and crack-free were obtained, whereas thin film pyrolyzed in air for 24 h exhibited polycrystalline character. According to the pole-figure analysis, epitaxy of the product films was found to depend on pyrolysis atmosphere.

• Journal of the Korean Ceramic Society
• /
• v.35 no.8
• /
• pp.791-794
• /
• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1994.11a
• /
• pp.13-16
• /
• 1994

In this paper, xPb(Zn$_{1/3}Nb_{2/3}$)$O_3$-yPbTiO$_3$-zPbZrO$_3$-(0.5wt%)MnO$_2$ ceramics were fabricated by the mixed oxide method sintered at $1250^{\circ}C$ for 2[hr] and then the deielectric, electromechanical coupling factor($K_{p}$ and mechanical coupling factor(Qm) properties were investigated. In 0.1PZN-0.45PT-0.45PZsample, dielectric properties and electromechanical coupling factor were 829 and 29%. In the case of 0.5PZN-0.45PT-0.50PZ sample, that was 101 according to mechanical quality facotr. molphotropic phase boundary(MPB) certained area which $PbTiO_3$addition quatity 40∼50[㏖%].