• Nuclear Engineering and Technology
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• v.37 no.3
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• pp.287-292
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• 2005

[ $\pi$ ]The effects of silica-based additives have been investigated to improve the creep property of a $UO_2$ pellet. The additive composition, $50wt\%SiO_2-47wt{\%}CaO-3wt\%Cr_2O_3$ (SCC), was selected according to the dihedral angle and the distribution of the second phase. It was observed that the creep rate of the $0.07 wt\%$ SCC-added $UO_2$ was slower than that of the pure $UO_2$. However, the creep rate of the $0.22 wt\%$ SCC-added $UO_2$ was about 3_48 times faster than that of the pure $UO_2$, depending on the applied stress in the lower stress range. In the case of the $0.35 wt\%$ SCC-added $UO_2$, the creep rate decreased in comparison with that of the $0.22 wt\%$ SCC-added $UO_2$. The observed enhancement in the creep rate might depend on a balance between the positive role of the viscous intergranular phase and the negative roles of the additives and the grain growth.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.3
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• pp.124-129
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• 1989

The cordierite is of great interest for microelectronic packaging. Its main advantages are low dielectric constant and low thermal expansion. The cordierite precursor obtained by sol-gel synthesis whose sintering temperature is about $900^{circ}C$ is an amorphous and cristal white powder. Green and fired cordierite samples were studied by XPS for microscopic properties. At the surface the results of XPS show forte diminution of Mg in comparison with its value at volume and the deficit of Mg compensates by augmentation of Al and Si. $pi$-cordierite phase is present near the surface $<100{\AA}$ and small quantities of magnesium aluminate ($MgAl_2O_4) is present in the bulk. Sintering of the green cordierite introduces no chemical modification at the surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.378-381
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• 2003

The chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.152-152
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• 1999

1Gb급 이상 기억소자의 캐패시터 재료로 주목받고 있는 (Ba,Sr)TiO3 [BST] 박막의 전극재료로는 Pt, Ru, Ir과 같은 금속전극과 RuO2, IrO2와 산화물 전도체가 유망한 것으로 알려져 있다. 그런데, DRAM의 집적도가 증가하게 되면, BST같은 고유전율 박막을 유전재료로 사용한다 하더라도, 3차원적인 구조가 불가피하게 때문에 기존의 sputtering 방법으로는 우수한 단차피복성을 얻기 힘들므로, MOCVD법이 필수적이다. 본 연구에서는 기존에 연구되었던 Pt에 비해 식각특성이 우수하고, 비교적 낮은 비저항을 갖는 Ru 박막증착에 대한 연구를 행하였다. 본 연구에서는 수직형의 반응기와 저항 가열 방식의 susceptor로 구성된 저압 유기금속 화학증착기를 사용하여 최대 6inch 직경을 갖는 기판 위에 Ru박막을 증착하였다. Precursor로는 기존에 연구된 적이 없는 bis-(ethyo-$\pi$-cyclopentadienyl)Ru (Ru(C5H4C2H5)2, [Ru(EtCp)2])를 사용하였으며, bubbler의 온도는 85$^{\circ}C$로 하였다. Si, SiO2/Si를 사용하였으며, 증착온도 25$0^{\circ}C$~40$0^{\circ}C$, 증착압력 3Torr의 조건에서 Ru 박막을 증착하였다. Presursor를 운반하는 수송기체로는 Ar을 사용하였으며, carbon과 같은 불순물의 제거를 위해 O2를 첨가하였다. 증착된 박막은 XRD, SEM, 4-point probe등을 통해 구조적, 전기적 특성을 평가하였으며, 열역학 계산을 위해서는 SOLGASMIX-PV프로그램을 사용하였다. Ru 박막의 증착에 있어서 산소의 첨가는 필수적이었으며, Ru 박막의 증착속도는 30$0^{\circ}C$~40$0^{\circ}C$의 온도 영역에서 200$\AA$/min으로 일정하였으며, 첨가된 산소의 양이 적을수록 더 치밀하고 평탄한 표면형상을 보였으며, 또한 더 낮은 전기 전도도를 보였다. 그리고 증착된 박막은 12~15$\mu$$\Omega$cm 정도의 낮은 비저항 값을 나타냈으며 이것은 기존의 sputtering 법에 의해 증착된 Ru 박막의 비저항 값들과 비교될만하다. 한편, 높은 온도, 높은 산소분압 조건에서 RuO2의 형성을 관찰하였으며, 이것은 열역학적인 계산을 통해서 잘 설명할 수 있었다.

• Journal of the Korean Magnetics Society
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• v.10 no.1
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• pp.30-36
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• 2000

SmCo films were deposited on Si(100) substrate by a Nd-YAG pulsed laser ablation of the targets of Sm$\_$100-x/Co$\_$x/ (73$\leq$x$\leq$93) at the substrate temperature of 600∼700$\^{C}$ and the laser beam energy density of Q switching mode or fixed Q mode. The magnetic properties of the films obtained from the Q switching mode exhibited a 4 $\pi$ Ms of 5200∼7700 Gauss, iHc of 190-250 Oe, and 4$\pi$M$\_$r//4$\pi$M$\_$s/ of 0.4∼0.74, respectively, while the fixed Q mode gave the magnetic properties of corresponding films of a 4$\pi$M$\_$r//4$\pi$M$\_$s/ = 0.32∼0.91 and iHc of 430-6290 Oe, respectively. The fixed Q mode gave the better magnetic properties of the SmCo films which seems to be due to a formation of magnetically hard minor phases in droplet of Sm-rich intermetallics. However, the resultant rough surface of the SmCo films is a problem to be solved by a continued study.

• Journal of The Korean Society of Agricultural Engineers
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• v.54 no.2
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• pp.127-135
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• 2012

The processes of chemical and physical weathering occur simultaneously. The objective of this study was to estimate the degree weathered using fractal dimension through comparison with chemical characteristic of soil samples from Pohang (PH) and Kimpo (KP). Comparing chemical characteristics with fractal dimension, $SiO_2$, $Na_2O$, $K_2O$ content decreased and loss of ignition increased as fractal dimension increased. And fractal dimension showed high correlation with CWI while ATI, STI CIW, PI, CIA and RR demonstrated different degrees of correlation with fractal dimension. The tendency of the changes in oxide content and chemical weathering index with increasing fractal dimension appeared to be similar with the chemical changes due to weathering. Therefore, fractal dimension could be a good indicator representing the extent of weathering and chemical changes.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.379-384
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• 1994

Room-temperature photoluminescent porous Si has been formed by etching Si wafer u-ith the solution of $HF:HNO_{3}: H_{2}O$=l : 5 : 10. We have observed photoluminescence(PL) spectra similar to those reported recently for porous-Si films formed by anodic etching with HF solutions. We have also investigated the dependence of PI, spectra on the etching time which was varied from 1 to 10 minutes. We found that 5-minute etching gave us the strongest PL intensity. We also found by atomic force microscopy( AFM) measurements that the surface fearure size became smaller for longer etching time and the average feature size of the etched Si wafer for 5-minute was about 1, 500~2, 000$\AA$. This indicates that the surface feature of the etched porous Si affects the PL intensity of the sample.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.135-145
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• 2011

Accurate process characterization and optimization are the first step for a successful advanced process control (APC), and they should be followed by continuous monitoring and control in order to run manufacturing processes most efficiently. In this paper, process characterization and recipe optimization methods with multiple outputs are presented in high density plasma-chemical vapor deposition (HDP-CVD) silicon dioxide deposition process. Five controllable process variables of Top $SiH_4$, Bottom $SiH_4$, $O_2$, Top RF Power, and Bottom RF Power, and two responses of interest, such as deposition rate and uniformity, are simultaneously considered employing both statistical response surface methodology (RSM) and neural networks (NNs) based genetic algorithm (GA). Statistically, two phases of experimental design was performed, and the established statistical models were optimized using performance index (PI). Artificial intelligently, NN process model with two outputs were established, and recipe synthesis was performed employing GA. Statistical RSM offers minimum numbers of experiment to build regression models and response surface models, but the analysis of the data need to satisfy underlying assumption and statistical data analysis capability. NN based-GA does not require any underlying assumption for data modeling; however, the selection of the input data for the model establishment is important for accurate model construction. Both statistical and artificial intelligent methods suggest competitive characterization and optimization results in HDP-CVD $SiO_2$ deposition process, and the NN based-GA method showed 26% uniformity improvement with 36% less $SiH_4$ gas usage yielding 20.8 ${\AA}/sec$ deposition rate.

• Laser Solutions
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• v.17 no.3
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• pp.19-23
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• 2014

To directly engrave circuit-line patterns as wide as $6{\mu}m$ in a buildup film to be used as an IC substrate, we applied a projection ablation technique in which an 8 inch dielectric ($ZrO_2/SiO_2$) mask, a DPSS 355nm laser instead of an excimer laser, a ${\pi}$-shaper and a galvo scanner are used. With the ${\pi}$-shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam. The galvo scanner before the $f-{\theta}$ lens moves the flat-top beam ($115{\mu}m{\times}105{\mu}m$) across the 8 inch dielectric mask whose patterned area is $120mm{\times}120mm$. Based on the results of the previous research by the authors, the projection ratio was set at 3:1. Experiments showed that the average width and depth of the engraved patterns are $5.41{\mu}m$ and $7.30{\mu}m$, respectively.

• Journal of the Korean Home Economics Association
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• v.32 no.1
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• pp.151-164
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• 1994

This research was conducted to survey kinds and frequencies of side dishes served in commercial Korean style restaurant in some part of Korea. The results were summerized as follows: 1. The average number of side dishes in Tang(Korean soup) was 3.3 that is Bae-chu Kimchi. Si-Kum-chi namul, Moeng-ran jeot and O-jing-o jeot in ordering frequencies. 2. In Chigae(stew) and Pi-bim bab(mixed rice including Sot bab) the average number of side dishes was about 4 Jungol and that of Jim was from 3 to 5 and the kinds of side dishes were variety of menu items. 3. Meons (noodles) were served with 1 or 2 kinds of side dishes those based of Bae-chu Kimchi and added 1 Kind of side dish. 4. Han-jeong-sik (Korean style full course meny) was served with 16 kinds of side dishes averge it was consisted of Bab(steamed rice) side dishes such as U-gu-zi guk(vegetable soup) Deun-jang chigae (fermented soy stew) Hong-o jim (fish stew) Go-sa-ri namul Pulgogi Ho-bak jeon, Beon-sut bokum Yuk hoi Bae-chu kimchi Mung-ran jeot Sae-u tuikim and Gam-ja tuikim in ordering frequences.