• Title/Summary/Keyword: $PH_3$

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Synthesis and Reactions of Organoruthenium(Ⅲ) Complexes (새로운 3가 유기루테늄 착물의 합성과 반응)

  • Lee Dong-Hwan;Kim Hag-Gu;Seo Dae-Ryong;Kim Byung-Soon
    • Journal of the Korean Chemical Society
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    • v.37 no.1
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    • pp.98-104
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    • 1993
  • The paramagnetic organoruthenium(III) complexes $({\eta}^5-C_5Me_5)RuCl_2(PR_3) (PR_3 = PMe_3,\;PEt_3,\;PiPr_3,\;PCy_3,\;PMe_2Ph,\;PMePh_2,\;PPh_3,\;P(p-C_6H_4CH_3)_3$, DPPE, DPPB, Py) (2a∼2k) were synthesized by the reaction of $[({\eta}^5-C_5Me_5)RuCl_2]_2$ (1) with 1 equivalent of the corresponding phosphines $(PR_3)$. The effective magnetic moment ((${\mu}_{eff} = 1.65∼2.07 B.M.$)) derived from the magnetic susceptibility measurements of the complexes (2a∼2k) were consistent with the presence of a "single" unpaired electron in the molecule. Treatment of dichlororuthenium (III) complex ({\eta}^5-C_5Me_5)RuCl_2(PR_3)$ (2) (i) with KBr in acetone afforded the dibromoruthenium (III) complex $({\eta}^5-C_5Me_5)RuBr_2(PR_3) (PR_3 = PPh_3)$, (ii) with sodium amalgam in diethylether led to the bis(phosphine) derivatives $({eta}^5-C_5Me_5)RuCl(PR_3)_2 (PR_3 = PMe_3,\;PMePh_2)$, and (iii) with carbonmonoxide gave to the carbonyl derivatives $({\eta}^5-C_5Me_5)RuCl(PR_3)(CO) (PR_3 = PMe_3,\;PPh_3)$.

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Performance Analysis of a Loss Retrial BMAP/PH/N System

  • Kim Che-Soong;Oh Young-Jin
    • Journal of Korea Society of Industrial Information Systems
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    • v.9 no.3
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    • pp.32-37
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    • 2004
  • This paper investigates the mathematical model of multi-server retrial queueing system with the Batch Markovian Arrival Process (BMAP), the Phase type (PH) service distribution and the finite buffer. The sufficient condition for the steady state distribution existence and the algorithm for calculating this distribution are presented. Finally, a formula to solve loss probability in the case of complete admission discipline is derived.

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Preparation and Reaction of Silyltriflate (Silyltriflate의 제조와 반응)

  • Kim, Chungkyun;Park, Eunmi;Jung, Inkyung;Joo, Kwangsuk
    • Journal of the Korean Chemical Society
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    • v.39 no.10
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    • pp.783-788
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    • 1995
  • Silyltriflates are obtained by reaction of the corresponding phenyl derivatives with CF3SO3H. The reaction of silyltriflate with allylmagnesium bromide produced the allylated silane derivatives R2SiHCH2CH=CH2 (R=Me, Ph). They are formed under mild condition with Pt catalysis to polycarbosilane. The cleavage of silicon-phenyl bonds of polysilane by CF3SO3H leads to triflate derivatives of polycarbosilane.

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Background impurity incorporation in the growth of InP by hydride vapor phase epitaxy technique (Hydride 기상증착법을 이용한 InP 성장에서의 배경 불순물 도입에 관한 연구)

  • Chinho Park
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.2
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    • pp.141-154
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    • 1996
  • Intrinsic layers of homoepitaxial InP grown by the hydride vapor phase epitaxy (VPE) technique were investigated by Fourier-transform photoluminescence(FTPL) and variable temperature Hall measurements. The effect of process variables (i.e., source zone temperature and inlet mole fractions of HCl and $PH_{3}$) on the backgroudn impurity levels was investigated. The background carrier concentration was found to decrease with decreasing source zone temperature and increasing HCl, but was relatively independent of $PH_{3}$ for the range of mole fraction studied. The presence of background donors and acceptors was clearly verified in the FTPL spectra, and the major impurities were tentatively identified as Si donors and Zn acceptors as well as some unidentified acceptors.

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Design Methodology of a Three-Phase Dual Active Bridge Converter for Low Voltage Direct Current Applications

  • Lee, Won-Bin;Choi, Hyun-Jun;Cho, Young-Pyo;Ryu, Myung-Hyo;Jung, Jee-Hoon
    • Journal of Power Electronics
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    • v.18 no.2
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    • pp.482-491
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    • 2018
  • The practical design methodology of a three-phase dual active bridge (3ph-DAB) converter applied to low voltage direct current (LVDC) applications is proposed by using a mathematical model based on the steady-state operation. An analysis of the small-signal model (SSM) is important for the design of a proper controller to improve the stability and dynamics of the converter. The proposed lead-lag controller for the 3ph-DAB converter is designed with a simplified SSM analysis including an equivalent series resistor (ESR) for the output capacitor. The proposed controller can compensate the effects of the ESR zero of the output capacitor in the control-to-output voltage transfer function that can cause high-frequency noises. In addition, the performance of the power converter can be improved by using a controller designed by a SSM analysis without additional cost. The accuracy of the simplified SSM including the ESR zero of the output capacitor is verified by simulation software (PSIM). The design methodology of the 3ph-DAB converter and the performance of the proposed controller are verified by experimental results obtained with a 5-kW prototype 3ph-DAB converter.

In-situ phosphorus doping effect on epitaxial growth of $Si_{1-x}Ge_{x}$ film with high ge fraction (고농도 ge fraction을 갖는 $Si_{1-x}Ge_{x}$ 막의 epitaxial growth에 대한 in-situ phosphorus doping 효과)

  • 이철진;박정훈;김성진
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.437-440
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    • 1998
  • We studied phosphorus doping effect on the epitaxial growth of $Si_{1-x}Ge_{x}$ film with high Ge fraction on Si substates at 550.deg. C by LPCVD. In a low $Ph_{3}$ partial pressure region such as below 1.25 mPa, the phosphorus dopant concentration increased linearly with increasing $PH_{3}$ partial pressure while the deposition rate and the Ge fraction were constant. In a higher $PH_{3}$ partial pressure region, the phosphorus dopant concentration and the deposition rate decreased, while the Ge fraction slightly increased. The deposition arate and the Ge fraction increased with increasing $GeH_{4}$ partial pressure while the phophours dopant concentration decreased. But the increasing rate of Ge fraction with incrasing $PH_{3}$ partial pressure was reduced at a high $GeH_{4}$ partial pressure. According to test results, it suggests that high surface coverage of phosphorus atoms suppress both the $SiH_{4}$ adsorption/reasction and the $GeH_{4}$ adsorption/reaction on the surfaces, and the effect is more stronger on $SiH_{4}$ than on $GeH_{4}$. In a higher $PH_{3}$ partial pressure region, the epitaxial growth is largely controlled by surface coverage effect of phosphorus atoms. The phosphorus surface coverage was slimited at a high $GeH_{4}$ partial pressure because adsorbed Ge atoms effectively suppresses the adsorption of phosphorus atoms.

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Characterization of Phytoplasmal Disease Occurred on Floricultural Crops in Korea (우리나라 화훼류 파이토플라스마병의 특성)

  • Chung, Bong-Nam;Jeong, Myeong-Il;Choi, Gug-Sun
    • Research in Plant Disease
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    • v.17 no.3
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    • pp.265-271
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    • 2011
  • Seven phytoplasma diseases have been occurred on floricultural crops in Korea : Ph-ch1 and Ph-ch2 of chrysanthemum, Ph-lily of lily, petunia flat stem-Korean (PFS-K) of petunia, poinsettia branch inducing- Korean (PoiBI-K) of poinsettia, statis witches' broom-Korean (SWB-K) of statis and azalea witches broom (AWB). Classification of the seven phytoplasmal diseases based on 16S ribosomal RNA (rRNA) sequences showed that floricultural crop phytoplasma disease were widespread in order of aster yellow (AY), stolbur and X-disease in Korea. In phenotypic characters, the fasciation was occurred in both monocotyledon plant of lily and dicotyledon plants of petunia and poinsettia. Besides, the fascination was occurred in Ph-lily of stolbur, petunia PFS-K of AY and PoiBI-K of X-disease. This result indicated that phytoplasma classification based on 16S rRNA and symptoms are not consistently related. The comparison of 16S rRNA sequence of the seven floricultural crop phytoplasma with five tree phytoplasmal diseases of jujube witches' broom, paulownia witches' broom, wild jujube witches' broom, mulberry dwarf, golden rain phytoplasma occurred in Korea showed as high as 88.5-99.9% homology. Among them, especially mulberry dwarf showed the highest homology with the seven floricultural crop phytoplasms. Based on this result, floricultural crop phytoplasmas were assumed to be transmitted by insect vectors from tree phytoplasmas in Korea.