• Journal of Sensor Science and Technology
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• v.15 no.3
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• pp.168-172
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• 2006

Potentiometric $CO_{2}$ sensors were fabricated using a NASICON ($Na_{1+x}Zr_{2}Si_{X}P_{3-X}O_{12}$, 1.8 < x < 2.4) thick film and auxiliary layers. The powder of a precursor of NASICON with high purity was synthesized by a sol-gel method. By using the NASICON paste, an electrolyte was prepared on the alumina substrate by screen printing and then sintered at $1000^{\circ}C$ for 4 h. A series of $Na_{2}CO_{3}-CaCO_{3}$ auxiliary phases were deposited on the Pt sensing electrode. The electromotive force (emf) values were linearly dependent on the logarithm of $CO_{2}$ concentration in the range between 1,000 and 10,000 ppm. The device attached with $Na_{2}CO_{3}-CaCO_{3}$ (1:2 in mol.%) showed good sensing properties in the low temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.732-736
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• 2006

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

• Korean Journal of Materials Research
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• v.19 no.8
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• pp.412-416
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• 2009

In this study, 3 mol% yttria-tetragonal zirconia polycrystal (3Y-TZP) nanoparticles were synthesized by the glycothermal method under various reaction temperatures and times. The co-precipitated precursor of 3Y-TZP was prepared by adding $NH_4OH$ to starting solutions, and then the mixtures were placed in an autoclave reactor. Tetragonal yttria-doped zirconia nanoparticles were afforded through a glycothermal reaction at a temperature as low as $220^{\circ}C$, using co-precipitated gels of $ZrCl_4$ and $YCl_3{\cdot}6H_2O$ as precursors and 1,4-butanediol as the solvent. The synthesized 3Y-TZP particles were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and Raman spectroscopy. The 3Y-TZP particles have a stable tetragonal phase only at glycothermal temperatures above $200^{\circ}C$. To investigate phase transition, the 3Y-TZP particles were heat treated from 400 to $1400^{\circ}C$ for 2 h. Raman analysis indicated that, after heat treatment, the tetragonal phase of the 3Y-TZP particles remained stable. The results of this study, therefore, suggest that 3Y-TZP powders can be prepared by the glycothermal method.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.325-328
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• 2008

This paper describes the electrical properties of poly (polycrystalline) 3C-SiC thin films with different nitrogen doping concentrations. In-situ doped poly 3C-SiC thin films were deposited by APCVD at $1200^{\circ}C$ using HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$) as Si and C precursor, and $0{\sim}100$ sccm $N_2$ as the dopant source gas. The peak of SiC is appeared in poly 3C-SiC thin films grown on $SiO_2/Si$ substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of poly 3C-SiC thin films decreased from $8.35{\Omega}{\cdot}cm$ with $N_2$ of 0 sccm to $0.014{\Omega}{\cdot}cm$ with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from $3.0819{\times}10^{17}$ to $2.2994{\times}10^{19}cm^{-3}$ and their electronic mobilities increased from 2.433 to $29.299cm^2/V{\cdot}S$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.164-168
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• 2024

(La_0.7Sr_0.3)(Mn_1-xFe_x)O₃ (LSMFO) (x = 0.03, 0.06, 0.09, 0.12) precursor solution are prepared by sol-gel method. LSMFO thin films are fabricated by the spin-coating method on Pt/Ti/SiO₂/Si substrate, and the sintering temperature and time are 800℃ and 1 hr, respectively. The average thickness of the 6-times coated LSMFO films is about 181 to 190 nm and average grain size is about 18 to 20 nm. As the amount of Fe added in the LSMFO thin film increased, the resistivity decreased, and the TCR and B_25/65-value increased. Electrical resistivity, TCR and B_25/65-value of the (La_0.7Sr_0.3)(Mn_0.88Fe_0.12)O₃ thin film are 0.0136 mΩ-cm, 0.358%/℃, and 328 K at room temperature, respectively. The resistivity properties of LSMFO thin films matched well with Mott's VRH model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.137-137
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• 2008

In-situ doped polycrystalline 3C-SiC thin films were deposited by APCVD at $1200^{\circ}C$ using HMDS(hexamethyildisilane: $Si_2(CH_3)_6)$) as Si and C precursor, and 0 ~ 100 sccm $N_2$ as the dopant source gas. The peak of SiC is appeared in polycrystalline 3C-SiC thin films grown on $SiO_2$/Si substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of polycrystalline 3C-SiC thin films decreased from 8.35 $\Omega{\cdot}cm$ with $N_2$ of 0 sccm to 0.014 $\Omega{\cdot}cm$ with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and their electronic mobilities increased from 2.433 to 29.299 $cm^2/V{\cdot}S$, respectively.

• Korean Journal of Materials Research
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• v.33 no.7
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• pp.265-272
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• 2023

In this study, the synthesis of nitrobenzene was carried out using sulfated silica catalyst. The study delved into H₂SO₄/SiO₂ as a solid acid catalyst and the effect of its weight variation, as well as the use of a microwave batch reactor in the synthesis of nitrobenzene. SiO₂ was prepared using the sol-gel method from TEOS precursor. The formed gel was then refluxed with methanol and calcined at a temperature of 600 ℃. SiO₂ with a 200-mesh size was impregnated with 98 % H₂SO₄ by mixing for 1 h. The resulting 33 % (w/w) H₂SO₄/SiO₂ catalyst was separated by centrifugation, dried, and calcined at 600 ℃. The catalyst was then used as a solid acid catalyst in the synthesis of nitrobenzene. The weights of catalyst used were 0.5; 1; and 1.5 grams. The synthesis of nitrobenzene was carried out with a 1:3 ratio of benzene to nitric acid in a microwave batch reactor at 60 ℃ for 5 h. The resulting nitrobenzene liquid was analyzed using GC-MS to determine the selectivity of the catalyst. Likewise, the use of a microwave batch reactor was found to be appropriate and successful for the synthesis of nitrobenzene. The thermal energy produced by the microwave batch reactor was efficient enough to be used for the nitration reaction. Reactivity and selectivity tests demonstrated that 1 g of H₂SO₄/SiO₂ could generate an average benzene conversion of 40.33 %.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.731-735
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• 2013

YBCO thin films on $SiO_2$/Si substrate were fabricated by spin-coaing of an alkoxide-derived precursor and heat treatment. The structural and electrical properties of the YBCO films were investigated as functions of annealing temperature at $600{\sim}800^{\circ}C$. Although YBCO single phase was not synthesized, dense films of YBCO matrix phase and minor second phases have been successfully fabricated at the annealing temperatures of $650{\sim}800^{\circ}C$. Thickness and temperature coefficient of resistance (TCR) of YBCO thin films with annealing temperature of $750^{\circ}C$ were 0.31 ${\mu}m$ and $-2.92%/^{\circ}C$, respectively.

• Journal of Powder Materials
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• v.21 no.2
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• pp.131-136
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• 2014

Cathode materials and their precursors are prepared with transition metal solutions recycled from the the waste lithium-ion batteries containing NCM (nickel-cobalt-manganese) cathodes by a $H_2$ and C-reduction process. The recycled transition metal sulfate solutions are used in a co-precipitation process in a CSTR reactor to obtain the transition metal hydroxide. The NCM cathode materials (Ni:Mn:Co=5:3:2) are prepared from the transition metal hydroxide by calcining with lithium carbonate. X-ray diffraction and scanning electron microscopy analyses show that the cathode material has a layered structure and particle size of about 10 ${\mu}m$. The cathode materials also exhibited a capacity of about 160 mAh/g with a retention rate of 93~96% after 100 cycles.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.44 no.5
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• pp.484-489
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• 2011

This study examined whether N-acetylcysteine (NAC), a glutathione precursor, could attenuate toxic effects of three fish anti-parasitic agents, trichlorfon, hydrogen peroxide ($H_2O_2$) and formalin, all of which are known to exert side effects through free radical production. Common carp Cyprinus carpio were fed with NAC (approx. 50 mg/kg/day) for 3 consecutive days prior to anti-parasite bathing for a 24 hr period. Mortality rates were examined during this 24 hr bathing period, and selected hematological and biochemical parameters were also assessed at the termination of anti-parasite exposure. The mortality rates and plasma glucose elevations caused by all three anti-parasitics were significantly reduced by NAC pretreatment. Trichlorfon, but not $H_2O_2$ or formalin, elevated plasma levels of aspartatetransaminase (AST) and alanine-transaminase (ALT), and these elevations were attenuated by NAC. There was no change in hematocrit values in any treatment. The results provide evidence for the attenuating effects of NAC against toxicity caused by anti-parasite agents that act through free radical-producing properties. The results found in this study also suggest that NAC may be administered to fish to minimize toxicity in fish parasiticide use.