• 한국자기학회지
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• 제10권3호
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• pp.123-132
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• 2000

고주파 마그네트론 스퍼터를 이용하여 cerium 치환 YIG(Ce:YIG, cerium substitued yttrium iron garnet) 박막을 제조시 기판유형, 기판온도, 스퍼터전력, 스퍼터가스 등의 증착변수와 증착후 열처리 조건이 박막의 결정성, 화학조성, 미세구조 그리고 자기적 특성에 미치는 영향에 대하여 고찰하였다. 750 $^{\circ}C$ 이상의 온도에서 수행한 증착후 열처리에 의하여 비정질 박막이 결정화 되었으며, 특히 GGG(gadolinium gallium garnet) 기판 위에 제조된 박막은 강한 우선배향성을 나타냈다. 박막의 조성은 스퍼터가스 내의 산소분율에 민감하게 변하였으며, 산소 분율이 10%인 스퍼터 가스(Ar+ $O_2$)를 사용하여 제조된 박막은 C $e_{0.23}$ $Y_{1.30}$F $e_{3.50}$ $O_{12}$의 조성을 나타내었다. 증착후 열처리 온도가 900 $^{\circ}C$로부터 1100 $^{\circ}C$로 증가함에 따라, GGG 기판 위 박막의 표면 거칠기는 약 3 nm로부터 40 nm까지 증가하였으며, 보자력과 강자성 공명 선폭은 각각 0.48 kA/m로부터 0.37 kA/m로 각각 감소하였다.다.하였다.다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• 센서학회지
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• 제10권6호
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• pp.295-303
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• 2001

형광체로서 ZnS를 사용하고 BST 강유전체 박막을 절연체로 사용한 전계발광소자를 제작하고 그 특성을 조사하였다. 형광체로는 청색 및 녹색발광을 위해 각각 $ZnS:AgF_3$와 ZnS:$TbF_3$를 사용하였으며 적색을 위해 ZnS:Mn과 $ZnS:SmF_3$를 사용했다. 이들의 형광체가 증착 도중에 분해되는 것을 막기 위해 석영관에 그들을 각각 봉입해서 열처리하여 결정화시킨 후에 진공증착원으로 사용하였다. 한편 절연층으로 사용한 BST박막은 $Ba_{0.5}Sr_{0.5}TiO_3$세라믹스 타겟을 사용하여 마그네트론 스퍼터링 방법으로 제조하였다. 이때 기판온도, 분위기압 및 작동기체인 $Ar:O_2$의 비가 각각 $400^{\circ}C$, 30 mTorr 및 9:1이였다. 각 형광체의 두께는 150 nm씩 합계 600 nm였고, 절연층은 상부가 400 nm 및 하두가 200 nm이었다. 이와 같이 만든 박막 전계발광소자의 발광 문턱전압은 $75\;V_{rms}$이고, 최고 휘도는 $100\;V_{rms}$에서 $3200\;cd/m^2$이었다. 그리고 절연층의 유전상수는 1 kHz에서 254이다.

• 한국결정성장학회지
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• 제29권2호
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• pp.45-49
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• 2019

본 연구에서는, 탄소성분으로서 탄화왕겨, 제지슬러지, 커피찌꺼기와 실리카 분말로부터, 비교적 미세한 탄화규소 결정질 응집체를 합성하였다. 탄소성분들과 실리카의 혼합물로부터 탄화규소 응집체를 얻기 위한 주요 반응물질은 열탄화환원 반응에 의해 생성된 일산화규소 기체로 추정되었다. 탄화왕겨, 제지슬러지, 커피찌꺼기와 실리카 분말의 혼합물로부터 열탄화환원반응법을 거쳐 생성된 탄화규소 결정질 응집체들에 대한 XRD 회절패턴으로부터 결정상을 분석하였고, FE-SEM과 FE-TEM을 통한 미세구조, 결정구조 분석이 이루어졌다. 탄화왕겨, 제지슬러지, 그리고 실리카 분말의 시료의 경우, XRD 분석에서는 $35^{\circ}$ 부근의 (111) peak은 비교적 높은 강도를 나타내었다. 탄화왕겨, 제지슬러지, 커피찌꺼기와 실리카 분말의 혼합물로부터 합성된 시료들에 대해 FE-SEM 관찰을 통하여 $1{\mu}m$ 이하의 미세입자들을 관찰하였으며, TEM 측정 결과에서는 탄화규소 결정질상의 (110) 회절패턴들을 확인하였다.

• 자원환경지질
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• 제15권3호
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• pp.123-154
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• 1982

Petrochemical, K-Ar dating, Sand Rb/Sr isotopes, metallogenic zoning, paleomagnetic and geotectonic studies of the Gyongsang basin were carried out to examine applicability of plate tectonics to the post-late Cretaceous igneous activity and metallogeny in the southeastern part of Korean Peninsula. The results obtained are as follows: 1. Bulgugsa granitic rocks range from granite to adamellite, whose Q-Ab-Or triangular diagram indicates that the depth and pressure at which the magma consolidated increase from coast to inland varying from 6 km, 0.5-3.3 kb in the coastal area to 17 km, 0.5-10 kb in the inland area. 2. The volcanic rocks in Gyongsang basin range from andesitic to basaltic rocks, and the basaltic rocks are generally tholeiitic in the coastal area and alkali basalt in the inland area. 3. The volcanic rocks of the area have the initial ratio of Sr^{87}/Sr^{86} varying from 0.706 to 0.707 which suggests a continental origin; the ratio of Rb/Sr changing from 0.079-0.157 in the coastal area to 0.021-0.034 in the inland area suggests that the volcanism is getting younger toward coastal side, which may indicate a retreat in stage of differentiation if they were derived from a same magma. The K_2O/SiO_2 (60%) increases from about 1.0 in the coastal area to about 3.0 in the inland area, which may suggest an increase indepth of the Benioff zone, if existed, toward inland side. 4. The K-Ar ages of volcanic rocks were measured to be 79.4 m.y. near Daegu, and 61.7 m.y. near Busan indicating a southeastward decrease in age. The ages of plutonic rocks also decrease toward the same direction with 73 m.y. near Daegu, and 58 m.y. near Busan, so that the volcanism predated the plutonism by 6 m.y. in the continental interior and 4 m.y. along the coast. Such igneous activities provide a positive evidence for an applicability of plate tectonics to this area. 5. Sulfur isotope analyses of sulfide minerals from 8 mines revealed that these deposits were genetically connected with the spacially associated ingeous rocks showing relatively narrow range of ${\delta}^{34}S$ values (-0.9‰ to +7.5‰ except for +13.3 from Mulgum Mine). A sequence of metallogenic zones from the coast to the inland is delineated to be in the order of Fe-Cu zone, Cu-Pb-Zn zone, and W-Mo zone. A few porphyry type copper deposits are found in the Fe-Cu zone. These two facts enable the sequence to be comparable with that of Andean type in South America. 6. The VGP's of Cretaceous and post Cretaceous rocks from Korea are located near the ones($71^{\circ}N$, $180^{\circ}E$ and $90^{\circ}N$, $110^{\circ}E$) obtained from continents of northern hemisphere. This suggests that the Korean peninsula has been stable tectonically since Cretaceous, belonging to the Eurasian continent. 7. Different polar wandering path between Korean peninsula and Japanese islands delineates that there has been some relative movement between them. 8. The variational feature of declination of NRM toward northwestern inland side from southeastern extremity of Korean peninsula suggests that the age of rocks becomes older toward inland side. 9. The geological structure(mainly faults) and trends of lineaments interpreted from the Landsat imagery reveal that NNE-, NWW- and NEE-trends are predominant in the decreasing order of intensity. 10. The NNE-trending structures were originated by tensional and/or compressional forces, the directions of which were parallel and perpendicular respectively to the subduction boundary of the Kula plate during about 90 m.y. B.P. The NWW-trending structures were originated as shear fractures by the same compressional forces. The NEE-trending structures are considered to be priginated as tension fractures parallel to the subduction boundary of the Kula plate during about 70 m.y. B.P. when Japanese islands had drifted toward southeast leaving the Sea of Japan behind. It was clearly demonstrated by many authors that the drifting of Japanese islands was accompanied with a rotational movement of a clock-wise direction, so that it is inferred that subduction boundary had changed from NNE- to NEE-direction. A number of facts and features mentioned above provide a suite of positive evidences enabling application of plate tectonics to the late Cretaceous-early Tertiary igneous activity and metallogeny in the area. Synthesizing these facts, an arc-trench system of continental margin-type is adopted by reconstructing paleogeographic models for the evolution of Korean peninsula and Japan islands. The models involve an extention mechanism behind the are(proto-Japan), by which proto-Japan as of northeastern continuation of Gyongsang zone has been drifted rotationally toward southeast. The zone of igneous activity has also been migrated from the inland in late-Cretaceous to the peninsula margin and southwestern Japan in Tertiary.

• 한국재료학회지
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• 제22권4호
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• pp.190-194
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• 2012

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.717-722
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• 2004

A design was done, and all characteristic of photodetectr of the web pattern type which a standard process of the Bipolar which Si PIN structure was used in this paper, and was used for the current amplifier design was used, and high-speed, was used as receiving optcal area of high altitude, and the module which had a low dark current characteristic was implemented with one chip with a base. Important area decreases an area of Ie at the time of this in order to consider an electrical characteristic and economy than the existing receiving IC, and performance of a product and confidence are got done in incense. First of all, the receiving IC which a spec, pattern of a wafer to he satisfied with the following electrical optical characteristic that produced receiving IC of 5V and structure are determined, and did one-chip is made. On the other hand, the time when AR layer of double is $Si_{3}N_{4}/SiO_{2}=1500/1800$ has an optical reflectivity of less than $10{\%}$ on an incidence optical wavelength of 660 ,and, in case of photo detector which reverse voltage made with 1.8V runs in 1.65V, an error about a change of thickness is very the thickness that can be improved surely. And, as for the optical current characteristic, about 5 times increases had the optical current with 274nA in 55nA when Pc was -27dBm. A BJT process is used, and receiving IC running electricity suitable for low voltage and an optical characteristic in minimum 1.8V with a base with two phases is made with one chip. IC of low voltage operates in 1.8V and 3.0V at the same time, and optical link receiving IC is going to be implemented

• KSBB Journal
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• 제17권3호
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• pp.235-240
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• 2002

친수성 표면을 만들기 위하여 산소분위기에서 1 keV의 에너지를 갖는 아르곤 이온빔을 폴리프로필렌 담체의 표면에 조사하였다. 삼차 증류수에 대한 접촉각은 개질 전의 $78^{\circ}$에서 최적의 조건에서 $22^{\circ}$까지 감소하였다. 이온 보조 반응 후의 친수성 증가는 ether, carbonyl, carboxyl 등의 새로 형성된 작용기에 의한 것이며 극성 용매에 대한 안정성이 우수하므로 활성화된 표면이 폐수 내에서도 안정하다. 활성화된 폴리프로필렌 담체를 합성폐수내의 유기물을 제거하기 위한 bio-film공정에 적용하였다. 이온 보조 반응법으로 친수성 표면으로 개질된 PP 담체는 극성 용매내에서 극성작용기가 유지되었으므로 안정된 표면 특성을 이용하여 박테리아 부착의 생물막 공정에 대한 연구를 수행하여 미생물의 부착은 표면의 염기성 극성작용기에 의하여 증진됨을 확인하였다. 합성폐수에 대한 처리 효율은 30%까지 증가 하였으며 장시간에 걸친 COD 농도 감소 효과를 나타내었으므로 이온 보조 반응법에 의하여 처리된 PP고분자를 수질 개선용의 담체로 사용하여 처리효율을 증가시킬 수 있음을 확인하였다.

• 천문학회지
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• 제41권6호
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• pp.163-172
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• 2008

Using the spectral data in the 3700 to $10050{\AA}$ wavelength range secured with the Hamilton Echelle Spectrograph (HES) at the Lick observatory, we have investigated the expansion velocities and the physical conditions of the elliptical planetary nebula NGC 6803. Various forbidden and permitted lines, e.g. HI, HeI, HeII, [OIII], [NII], [ArIII], and [SII], indicate complicated but systematic physical conditions variation: electron temperatures $T_{\varepsilon}\;{\sim}\;9000$ - 11000 K and electron number densities $N_{\varepsilon}\;{\sim}\;2000$ - $9000\;cm^{-3}$. The line profile analysis of these ions also indicates the systematic change or the acceleration of the expansion velocities in the range of 10 - $22\;km\;s^{-1}$. We show that the velocity gradient and physical condition found in various ions are closely related to the prolate ellipsoidal structure of NGC 6803. The expansion velocity and the ionic abundance of $O^{2+}$ were derived based on the OII and [OIII] lines. In spite of the discrepancy of ionic abundances derived by the two cases and their line profiles, the expansion velocities of them agree well. We find that the ratios of the red to blue line component of the HeII & OII lines are different from those of the [OIII] or other forbidden lines that indicates a possible involvement of emission of HeII & OII lines. This subtle difference and the different physical condition of the lines are likely to be caused by the elongated geometry and the latitude dependence of the emission zone.

• 한국표면공학회지
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• 제38권5호
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• pp.188-192
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• 2005

Indium zinc oxide (IZO) thin films were deposited on glass substrate by dc magnetron sputtering. The effects of oxygen flow rate and deposition temperature on electrical and optical properties of the films were investigated. With addition of small amount of oxygen gas, the characteristic properties of amorphous IZO films were improved and the specific resistivity was about $4.8{\times}10^{-4}\Omega{\cdot}cm$. Change of structural properties according to the deposition temperature was observed with XRD, SEM, and AFM. Films deposited above $300^{\circ}C$ were found to be polycrystalline. Surface roughness of the films was increased due to the formation of grains on the surface. Electrical conductivity became deteriorated for polycrystalline IZO films. Consequently, high quality IZO films could be prepared by do sputtering with $O_{2}/Ar{\simeq}0.03$ and deposition temperature in range of $150\~200^{\circ}C$; a specific resistivity of $3.4{\times}10^{-4}{\Omega}{\cdot}cm$, an optical transmission over $90\%$ at wavelength of 550 nm, and a rms value of surface roughness about $3{\AA}$.