• 제목/요약/키워드: $O_2$ partial pressure

검색결과 489건 처리시간 0.03초

Effect of Metallic Tungsten Concentration on Resistance Switching Behavior of Sputtered W-doped NbOx Films

  • 이규민;김종기;나희도;손현철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.288-288
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    • 2012
  • In this study, we investigated that the resistance switching characteristics of W-doped NbOx films with increasing W doping concentration. The W-doped NbOx based ReRAM devices with a TiN/W-doped NbOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 50 nm thick W-doped NbOx films were deposited by reactive dc magnetron co-sputtering at $400^{\circ}C$ and oxygen partial pressure of 35%. Micro-structure of W-doped NbOx films and atomic concentration were investigated by XRD, TEM and XPS, respectively. The W-doped NbOx films showed set/reset resistance switching behavior at various W doping concentrations. The process voltage of set/reset is decreased and whereas the initial current level is increased with increasing W doping concentration in NbOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of metallic tungsten of oxygen of W-doped NbOx.

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Formation of Ti-B-N-C Ceramic Composite Materials via a Gas-Solid Phase Reaction

  • Yoon, Su-Jong
    • 한국재료학회지
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    • 제16권1호
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    • pp.50-57
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    • 2006
  • Phase mixtures of Titanium boride, nitride, and carbide powder were produced by the reduction of a mixture of titanium and boron oxides with carbon via a gas-solid phase reaction. Boron oxides produce a vapour phase or decompose to a metal sub-oxide gaseous species when reduced at elevated temperature. The mechanism of BO sub-oxide gas formation from $B_2O_3$ and its subsequent reduction to titanium diboride for the production of uniform size hexagonal platelets is explained. These gaseous phases are critical for the formation of boride, nitride and carbide ceramics. For the production of ceramic phase composite microstructures, the nitrogen partial pressure was the most critical factor. Some calculated equilibrium phase fields has been verified experimentally. The theoretical approach therefore identifies conditions for the formation of phase mixtures. The thermodynamic and kinetic factors that govern the phase constituents are also discussed.

블루사파이어와 루비의 고온산소 화염처리에 의한 색향상 (Color Enhancement by Oxygen Torch in Blue Sapphires)

  • 송오성;김상엽
    • 한국표면공학회지
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    • 제38권2호
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    • pp.83-87
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    • 2005
  • We enhanced the color of blue sapphires and rubies successfully by using a oxygen-propane torch flame annealing, which had not been employed so far. We confirmed that about 1 mm-thick de-coloring of the corundum samples were available with 60 minutes flame annealing through eye evaluation, color coordination characterization, and methylene iodide immersion observation. We also suggest that the color centers such as $[Fe_{Al}^{\cdot}]$ may transform into transparent $[Fe_{Al}^{x}],\;[Cr_{A1}^{x}]$ sites with $[V_o^']$ generation at the elevated temperature in oxygen-rich atmosphere by diffusion mechanism. Our results implied that the longer diffusion time and the higher oxygen partial pressure might lead to the better de-coloring enhancement in corundum gem stones.

반응성 스퍼트링에 의한 ITO의 형성과 유전체 소성공정중의 특성변화에 관한 연구 (The Effect of Dielectric Firing Process in PDP on the Properties of ITO Prepared by Reactive RF Sputtering)

  • 남상옥;지성원;손제봉;조정수;박정후
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.510-514
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    • 1997
  • The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

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Resistivity Variation of Nickel Oxide by Substrate Heating in RF Sputter for Microbolometer

  • Lee, Yong Soo
    • 센서학회지
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    • 제24권5호
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    • pp.348-352
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    • 2015
  • Thin nickel oxide films formed on uncooled and cooled $SiO_2/Si$ substrates using a radio frequency (RF) magnetron sputter powered by 200 W in a mixed atmosphere of argon and oxygen. Grazing-incidence X-ray diffraction and field emission scanning electron microscopy are used for the structural analysis of nickel oxide films. The electrical conductivity required for better bolometric performance is estimated by means of a four-point probe system. Columnar and (200) preferred orientations are discovered in both films regardless of substrate cooling. Electric resistivity, however, is greatly influenced by the substrate cooling. Oxygen partial pressure increase during the nickel oxide deposition leads to a rapid decrease in resistivity, and the resistivity is higher in the cooled nickel oxide samples. Even when small microstructure variations are applied, lower resistivity in favor of low noise performance is acquired in the uncooled samples.

The Influence of Atmostphere on High Temperature Crystal Growth

  • Klimm, D.;Schroder, W.
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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    • pp.51-67
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    • 1999
  • The growth of crystals with high melting points tfus$\geq$1$600^{\circ}C$ faces the researcher with experimental problems, as the choice of materials that withstand such high t is rather limited. Many metallic construction materials are in this high t range already molten or exhibit at least a drastically reduced mechanical strength. The very few materials with tfus》1$600^{\circ}C$ as e.g. W, Mo, and partially even Ir are more or less sensitive against oxygen upon heating. Whenever possible, high t crystal growth is performed under inert atmosphere (noble gases). Unfortunately, any oxides are not thermodynamically stable under such conditions, as reduction takes place within such atmosphere. A thoroughly search for suitable growth conditions has to be performed, that are on the one side "oxidative enough" to keep the oxides stable and on the other side "reductive enough" to avoid destruction of constructive parts of the crystal growth assembly. The relevant parameters are t and the oxygen partial pressure pO2. The paper discusses quantitatively relevant properties of interesting oxides and construction materials and ways to forecast their behavior under growth conditions.r growth conditions.

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IBAD-MgO 기판을 이용한 GdBCO 초전도 박막선재의 제조 (Fabrication of GdBCO Coated conductor using IBAD-MgO substrate)

  • 하홍수;이정훈;오재근;고락길;김호섭;하동우;오상수;김호겸;양주생;정승욱;문승현;박찬;유상임;염도준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.44-44
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    • 2008
  • GdBCO coated conductor have been fabricated using reactive co-evaporation. The batch type co-deposition system was specially designed and was named EDDC (evaporation using drum in dual chamber) that is possible to deposit superconducting layer with optimum composition ratio of materials at temperature over $700^{\circ}C$ and several mTorr of oxygen. The IBAD-MgO substrate with the architecture of LaMnO3(LMO)/IBAD-MgO/Hastelloy was used for coated conductor. In this study, GdBCO superconducting layer was deposited on IBAD-MgO substrate at optimal oxygen partial pressure (pO2) and deposition temperature. After fabrication of GdBCO coated conductor, critical current density was measured by 4-probe method. Surface morphology and texture of GdBCO coated conductors were analyzed by the SEM and XRD, respectively.

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흡수 조건 및 부식 생성물에 의한 MEA 수용액의 변성 특성 (Degradation Characteristics of Aqueous MEA Solution by Corrosion Products and Absorption Conditions)

  • 남성찬;송윤아;백일현;윤여일;유정균;이창하
    • 한국수소및신에너지학회논문집
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    • 제27권3호
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    • pp.290-297
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    • 2016
  • The absorbent loss due to degradation in $CO_2$ capture process using aqueous alkanol amine solution has adverse effect on the economics of overall process. The degradation causes absorbent loss, equipment corrosion, foaming, adhesive material producing and viscosity increase in operation. In this study, the degradation characteristics of $CO_2$ capture process using MEA (monoehtanolamine) under various conditions such as $O_2$ partial pressure, $CO_2$ loading and absorbent temperature. The effects of iron, which generated from the equipment corrosion, on absorbent degradation were studied using $Fe_2SO_4$ containing MEA solution. The produced gases were analyzed by FT-IR(Fourier Transform Infrared Spectrophotometer) and the specifically measured $NH_3$ concentration was used as a degradation degree of aqueous MEA solution. The experiments showed that the higher $CO_2$ loadings (${\alpha}$), $O_2$ fraction ($y_{O2}$) and reaction temperature enhanced the more degradation of aqueous MEA solution. Comparing other operation parameters, the reaction temperature most affected on the degradation. Therefore, it could be concluded that the above parameters affects on degradation should be considered for the selections of $CO_2$ absorbent and operating conditions.

산화된 $SrTiO_3$ 및 니켈도프된 $SrTiO_3$ 단결정의 전기전도도 (Electrial Conductivity of Oxidized Pure and Ni-Doped $SrTiO_3$ Single Crystals)

  • 김규홍;최재시
    • 대한화학회지
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    • 제25권4호
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    • pp.236-245
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    • 1981
  • 순수한 $SrTiO_3$ 및 Ni 도프된 $SrTiO_3$ 단결정을 산화하여 700∼$1200^{\circ}C$$10^{-8}\;{\sim}\;10^{-1}$ atm의 온도 및 산소압력에서 산소압력의 함수로서 전기전도도를 측정하였다. 일정한 산소압력에서 전기전도도 값을 온도의 역수에 대하여 도시한 결과 직선관계를 나타내었으며 그 기울기로 부터 구한 활성화 에너지 값들은 순수한 $SrTiO_3$,에 대하여 1.34eV이며 Ni-doped $SrTiO_3$에 대하여 1.06eV이다. 일정한 온도에서 전기전도도 값을 산소분압에 대하여 도시한 결과 주어진 온도 범위에서 전기전도도의 산소압력 의존도가 -1/5.6${\sim}$-1.62로 나타났다. 실험치와 이론적으로 해석한 전기전도도의 산소 압력 의존성으로 부터 산소공위결합모델을 산화된 $SrTiO_3$와 Ni-doped $SrTiO_3$ 단결정에 이용할 수 있음을 알게 되었다. 주어진 온도 및 산소압력 범위에서 전기전도 메카니즘이 각각 제안되었다.

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고준위 핵페기물의 고정화를 위한 메트릭스 개발 : Ce파이로클로어 합성 연구 (Development of Matrix for the Immobilization of High Level Radioactive Waste : Study on the Synthesis of Ce-pyrochlore)

  • 채수천;장영남;배인국
    • 자원환경지질
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    • 제35권2호
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    • pp.97-102
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    • 2002
  • Ce-파이로클로어(Ce-pyrochlore; CaCe $Ti_2 $O_7)는 장주기 방사성 폐기물인 악티나이드 원소들을 고정화시킬 수 있는 새로운 물질이므로 Ce-파이로클로어를 합성하여 강평형 관계 및 특성을 연구하였다. 혼합된 시료는 상온에서 200-400kg/$\textrm{cm}^2$의 압력으로 성형한 후, 1000-150$0^{\circ}C$ 범위에서 소결온도 및 분위기를 변화시키면서 소성하였다. 합성된 시료는 XRD, SEM/EDS를 사용하여 상분석과 정량분석을 실시하였다. 실험결과, Ce-파이로클로어이 최적 합성조건은 산소분위기 하에서, 130$0^{\circ}C$로 소결하였을 때였으며, 이때의 화학조성은 $Ca_{1-x}Ti_{2-y}O_{7-x-2y}$ (x=0.03-0.05, y=0.02~0.04) 으로써 비화학양론적인 특성을 보였다. Ce-파이로클로어는 1300~140$0^{\circ}C$에서 빠른 비조화 분해현상을 나타내었으며, 140$0^{\circ}C$ 이상에서는 페로브스카이트(perovskite)와 로파라이트(loparite; $Ce_{0.66}TiO_{3}$)사이의 부분 고용체인 Ce(III)페로브스카이트가 주요상으로써 관찰되었다.