• 한국세라믹학회지
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• 제43권6호
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• pp.362-368
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• 2006

Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$ (BSTO) thin films have been grown on TiN buffered Si (001) substrates by Pulsed Laser Deposition (PLD) method and the effects of substrate temperature and oxygen partial pressure during the deposition on their dielectric properties and crystallinity were investigated. The crystal orientation, epitaxy nature, and microstructure of oxide thin films were investigated using X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). Thin films were prepared with laser fluence of $4.2\;J/cm^2\;and\;3\;J/cm^2$, repetition rate of 8 Hz and 10 Hz, substrate temperatures of $700^{\circ}C$ and ranging from $350^{\circ}C\;to\;700^{\circ}C$ for TiN and oxide respectively. BSTO thin-films were grown on TiN-buffered Si substrates at various oxygen partial pressure ranging from $1{\times}10^{-4}$ torr to $1{\times}10^{-5}$ torr. The TiN buffer layer and BSTO thin films were grown with cube-on-cube epitaxial orientation relationship of $[110](001)_{BSTO}{\parallel}[110](001)_{TiN}{\parallel}[110](001)_{Si}$. The crystallinity of BSTO thin films was improved with increasing substrate temperature. C-axis lattice parameters of BSTO thin films, calculated from XRD ${\theta}-2{\theta}$ scans, decreased from 0.408 m to 0.404 nm and the dielectric constants of BSTO epitaxial thin films increased from 440 to 938 with increasing processing oxygen partial pressure.

• 대한화학회지
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• 제16권2호
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• pp.74-79
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• 1972

The semiconductivity of polycrystalline $Cu_2O$ has been studied between $220^{\circ}C$ and $680^{\circ}C under partial pressures of oxygen from $4.06{\times}10^{-3}\;to\;10^{-5 }\;mmHg$. The plots of log conductivity vs 1/T at constant oxygen pressure were found to be linear, and the activation energies obtained from the slopes of these plots above the first transition point showed that the energies were greater under high oxygen pressure than under low pressure. The transition points between the stable range and the unstable range of $Cu_2O$ were found from the curves. The dependence of the semiconductivity on the $O_2$ pressure, in the above temperature range, is shown hysteresis.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 하계학술연구발표회 논문개요집
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• pp.122-123
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• 2005

• 자원리싸이클링
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• 제23권1호
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• pp.33-39
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• 2014

본 연구에서는 폐 PCB의 주성분인 Cu와 $CaO-SiO_2-Al_2O_3-MgO$계 슬래그의 평형실험에 의해 Cu의 용해도에 대하여 조사하였다. 1673 K~1825 K 범위에서 일정한 비율로 미리 용융된 4원계 슬래그와 Cu를 흑연 도가니에 각각 20 g 장입한 후, 10시간동안 평형 을 유지하였다. 분위기 중의 산소분압은 CO가스와 Ar가스의 비율을 조절하여 $10^{-17.23}{\sim}10^{-15.83}$ atm 범위로 제어하였다. 평형산소 분압과 염기도 및 MgO 농도가 증가할수록 슬래그 중 Cu의 농도는 증가하였다. 그리고 반응 온도가 높을수록 슬래그 중의 Cu의 농도는 감소하였다. 슬래그 중으로 용해되는 Cu의 반응은 발열반응이다.

• 한국대기환경학회지
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• 제5권1호
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• pp.52-61
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• 1989

The hydrodenitrogenation of quinoline dissolved in n-heptane was studied over sulfided Ni-Mo/$\gamma-Al_2O_3$ catalyst at the range of the temperature between 553 K and 673 and the total pressure between $20 \times 10^5$ Pa and $60 \times 10^5$ Pa in a fixed bed flow reactor. Quinoline conversion was very high at relatively low temperature and total pressure, and decreased with quinoline partial pressure. The thermodynamic equilibrium between quinoline and Py-THQ existed in wide ranges of experimental conditions and shifted in favor of quinoline at higher temperature. At the range of the temperature betwwen 553 K and 673 K and at the total pressure $60 \times 10^5$ Pa, the quinoline reaction rate was 1st order with respect to the concentr4ation of quinoline and its apparent activation energy was 7.15 Kcal/mole.

• 대한금속재료학회지
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• 제48권4호
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• pp.315-319
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• 2010

In this study, the hydrogen reduction behavior of ball-milled NiO nanopowder was investigated depending on the partial pressure of water vapor. The hydrogen reduction behavior was analyzed by thermogravimetry and hygrometry under heating to 873 K in hydrogen. In order to change the partial pressure of the water vapor, the dew point of hydrogen was controlled in the range of 248 K~293 K by passing high-purity hydrogen through a saturator that contained water. Interestingly, with the increase in the dew point of the hydrogen atmosphere, the first step of the hydrogen reduction process decreased and the second step gradually increased. After the first step, a pore volume analysis revealed that the pore size distribution in the condition with a higher water vapor pressure shifted to a larger size, whereas the opposite appearedat a lower pressure. Thus, it was found that the decrease in the pore volume during the chemical reaction controlled process at a dew point of 248 K caused a reduction in retardation in the diffusion controlled process.

• 공업화학
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• 제2권4호
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• pp.385-392
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• 1991

전하량적정법에 의해 $Ni_{1-x}O$의 비화학양(nonstoichiometry)를 측정하였고 결함모델을 확인하였다. 0.1-0.21atm의 산소분압과 1123-1198K의 온도범위에서 $Ni_{1-x}O$의 비화학양은 $Po_2{^{1/4}}$에 비례하였다. 이러한 산소분압의 의존성으로부터 $Ni_{1-x}O$의 주 결함은 singly 이온화한 Ni 빈자리임을 확인할 수 있었다. T=1173K와 $Po_2=0.21atm$인 조건에서 $x=1.21{\times}10^{-4}$의 값을 가졌다. 제안된 결함모델로 부터 결함의 표준생성엔탈피를 계산하였는데 0.95 eV의 값을 가졌다. 1248K 이상의 온도에서는 doubly 이온화된 빈자리로의 전이가 나타나기 시작하였다.

• 한국자기학회지
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• 제15권1호
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• pp.17-20
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• 2005

RF magnetron sputtering 법으로 Co-Fe-Al-O계 박막을 상온에서 제작하여 산소분압에 따른 포화자화, 보자력, 이방성자계, 고주파에서의 투자율(1 GHz)을 조사하였다. 최적조건인 4%의 산소분압에서 제조한 $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ 박막은 포화자속밀도 18.1kG, 보자력 0.82 Oe, 이방성자계 24 Oe, 실효 투자율(1 GHz) 1,024의 우수한 연자성을 나타내었다. Co-Fe-Al-OrP 박막의 전기비저항은 산소분압이 560.7 ${\mu}{\omega}cm$ 이었다. 따라서 약 560.7${\mu}{\omega}cm$의 높은 전기바저항과 24 Oe의 높은 이방성 자계 때문에 $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ 박막이 고주파에서 우수한 연자기적 성질을 가지는 것으로 판단된다.

• 한국분말재료학회지
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• 제20권2호
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• pp.114-119
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• 2013

In the DBC (direct bonding of copper) process the oxygen partial pressure surrounding the AlN/Cu bonding pairs has been controlled by Ar gas mixed with oxygen. However, the direct bonding of Cu with sound interface and good adhesion strength is complicated process due to the difficulty in the exact control of oxygen partial pressure by using Ar gas. In this study, we have utilized the in-situ equilibrium established during the reaction of $2CuO{\rightarrow}Cu_2O$ + 1/2 $O_2$ by placing powder bed of CuO or $Cu_2O$ around the Cu/AlN bonding pair at $1065{\sim}1085^{\circ}C$. The adhesion strength was relatively better in case of using CuO powder than when $Cu_2O$ powder was used. Microstructural analysis by optical microscopy and XRD revealed that the interface of bonding pair was composed of $Cu_2O$, Cu and small amount of CuO phase. Thus, it is explained that the good adhesion between Cu and AlN is attributed to the wetting of eutectic liquid formed by reaction of Cu and $Cu_2O$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권10호
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• pp.475-480
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• 2006

Vanadium oxide thin films (VOx) have been deposited by RF magnetron sputtering from $V_2O_5$ target under different oxygen partial pressure ratios(0%, 10%) and substrate temperatures$(27^{\circ}C,\;400^{\circ}C)$. Crystallographic structure and morphology of the films are studied by XRD and SEM. Humidity-sensing properties of resistive sensors having interdigitated electrode structure are characterized through electrical conduction measurements. The films deposited at room temperature are amorphous whereas the ones deposited above foot are polycrystalline. The sensors show good response to humidity over 20%RH to 80%RH. Vanadium oxide thin films deposited with $0%O_2$ partial pressure at $400^{\circ}C$ exhibit greater sensitivity to humidity change than others.