• Bulletin of the Korean Chemical Society
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• 제7권1호
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• pp.29-35
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• 1986

An empirical formula for semiconductive metal oxides is proposed relating nonstoichiometric value x to a temperature or an oxygen partial pressure such that experimental data can be represented more accurately by the formula than by the well-known Arrhenius-type equation. The proposed empirical formula is log x = A + $B{\cdot}1000/T\;+\;C{\cdot}$exp$(-D{\cdot}1000/T)$ for a temperature dependence and $log\;{\times}\;=a\;+b{\cdot}log\;Po_2\;+\;c{\cdot}$exp$(-d{\cdot}log\;Po_2)$ for an oxygen partial pressure dependence. The A, B, C, D and a, b, c, d are parameters which are evaluated by means of a best-fitting method to experimental data. Subsequently, this empirical formula has been applied to the n-type metal oxides of $Zn_{1+x}O,\; Cd_{1+x}O,\;and\;PrO_{1.8003-x}$, and the p-type metal oxides of $CoO_{1+x},\; FeO_{1+x},\;and\;Cu_2O_{1+x}$. It gives a very good agreement with the experimental data through the best-fitted parameters within 6% of relative error. It is also possible to explain approximately qualitative characters of the parameters A, B, C, D and a, b, c, d from theoretical bases.

• 한국재료학회지
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• 제13권8호
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• pp.519-523
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• 2003

We report the synthesis of cubic spinel $ZnCo_2$$O_4$thin films and the tunability of the conduction type by control of the oxygen partial pressure ratio. Zinc cobalt oxide films were grown on$ SiO_2$(200 nm)/Si substrates by reactive magnetron sputtering method using Zn and Co metal targets in a mixed Ar/$O_2$atmosphere. We found from X-ray diffraction measurements that the crystal structure of the zinc cobalt oxide films grown under an oxygen-rich condition (the $O_2$/Ar partial pressure ratio of 9/1) changes from wurtzite-type $Zn_{1-x}$ $Co_{X}$O to spinel-type $ZnCo_2$$O_4$with the increase of the Co/Zn sputtering ratio,$ D_{co}$ $D_{zn}$ . We noted that the above structural change accompanied by the variation of the majority electrical conduction type from n-type (electrons) to p-type (holes). For a fixed $D_{co}$ $D_{zn}$ / of 2.0 yielding homogeneous spinel-type $_2$O$ZnCo_4$films, the type of the majority carriers also varied, depending on the$ O_2$/Ar partial pressure ratio: p-type for an $O_2$-rich and n-type for an Ar-rich atmosphere. The maximum electron and hole concentrations for the Zn $Co_2$ $O_4$films were found to be 1.37${\times}$10$^{20}$ c $m^{-3}$ and 2.41${\times}$10$^{20}$ c $m^{-3}$ , respectively, with a mobility of about 0.2 $\textrm{cm}^2$/Vs and a high conductivity of about 1.8 Ω/$cm^{-1}$ /.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.150-154
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• 2000

Mobilities of electrons ($\mu_p$) and holes ($\mu_p$) in 2, 5, and 10 mol% $TiO_2$-doped yttria stabilized zirconia (TD-YSZ) have been estimated by a non-steady state gas permeation method using models proposed by Weppner and Maruyama. Values of $\mu_n$ and $\mu_p$ were found to be closed to those in non-doped YSZ reported earlier. The concentration of electrons and holes were calculated from $\mu_n$ and $\mu_p$ values and the partial conductivities of electrons and holes measured by a dc-polarization method. The concentration of electrons at unit oxygen partial pressure increased with increasing $TiO_2$concentration, while the hole concentration was almost independent of $TiO_2$concentration.

• Archives of Plastic Surgery
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• 제41권6호
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• pp.668-672
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• 2014

Background Negative-pressure wound therapy (NPWT) is believed to accelerate wound healing by altering wound microvascular blood flow. Although many studies using laser Doppler have found that NPWT increases perfusion, recent work using other modalities has demonstrated that perfusion is reduced. The purpose of this study was to investigate the influence of NPWT on tissue oxygenation of the foot, which is the most sensitive region of the body to ischemia. Methods Transcutaneous partial pressure of oxygen ($TcpO_2$) was used to determine perfusion beneath NPWT dressings of 10 healthy feet. The sensor was placed on the tarso-metatarsal area of the foot and the NPWT dressing was placed above the sensor. $TcpO_2$ was measured until it reached a steady plateau state. The readings obtained at the suction-on period were compared with the initial baseline (pre-suction) readings. Results $TcpO_2$ decreased significantly immediately after applying NPWT, but gradually increased over time until reaching a steady plateau state. The decrease in $TcpO_2$ from baseline to the steady state was 2.9 to 13.9 mm Hg (mean, $9.3{\pm}3.6$ mm Hg; $13.5{\pm}5.8%$; P<0.01). All feet reached a plateau within 20 to 65 minutes after suction was applied. Conclusions NPWT significantly decrease tissue oxygenation of the foot by 2.9 to 13.9 mm Hg. NPWT should be used with caution on feet that do not have adequate tissue oxygenation for wound healing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.313-313
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• 2010

$BiFeO_3$ (BFO), when forming a solid solution with $BaTiO_3$ (BTO), shows structural transformations over the entire compositional range, which not only gives a way to increase structural stability and electrical resistivity but also applies a means to have better ferromagnetic ordering. In this respect, we have prepared and studied 0.8 BFO-0.2 BTO thin films on Pt(111)/$TiO_2/SiO_2$/Si substrates by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been optimized to get better quality films. Based on the X-ray diffraction results, thin films were successfully deposited at the temperature of $700^{\circ}C$ and an oxygen partial pressure of 10mTorr and 330mTorr. The dielectric, ferroelectric, and magnetic properties have then been characterized. It was found that the films deposited under lower and higher oxygen pressure corresponded to lower leakage current. Magnetism measurement showed an induced ferromagnetism. The microstructures associated with the magnetic and dielectric properties of this mixed-perovskite solid solutions were observed by transmission electron microscopy, which revealed the existence of complicated ferroelectric domains, suggested that the weak spontaneous magnetization was closely associated with the decrease in the extent of rhombohedral distortion by a partial substitution of $BaTiO_3$ for $BiFeO_3$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 추계학술발표회 초록집
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권2호
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• 한국결정성장학회지
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• 제3권1호
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• pp.85-92
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• 1993

커다란 olivine 단결정을 image furnace(floating zone furnace)를 사용하여 산소분압의 조절하에서 성장시켰다. 결정은 투명하였으며 길이가 65mm, 직경이 8mm였다. 산소분압이 감소할 때 결정내 제2상이 증가하여 결정을 엷은 갈색에서 짙은 갈색으로 변화시켰다. 이 제2상은 EPMA결과 Mg가 기저를 이룬 것에 Si와 Fe가 solid solution을 형성한 것이었다.

• 대한화학회지
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• 제35권4호
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• pp.329-334
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• 1991

비화학양론적 화합물 NbO$_x$의 x값과 전기 전도도를 2 ${\times} 10 ^{-1}{\sim}1{\times}10^{-5}$ atm의 산소 압력 범위와, 700 ~ 1100$^{\circ}C$의 온도 범위에서 측정하였다. 1 ${\times}$ 10$^{-2}$ atm 이상의 산소 압력 범위에서 NbO$_x$는 화학양론적인 조성인 Nb$_2$O$_5$를 갖는다. x값은 1 ${\times}$ 10$^{-3}$ atm 이하의 산소 압력 범위와 700 ~ 1100$^{\circ}C$의 온도 범위에서 2.48491 ∼ 2.49900 이었다. 그 조건에서 NbO$_{2.50000-x'}$에서 x'의 생성 엔탈피(${\Delta}H_f$)는 15.98에서 17.26kcal/mol로 증가하였으며, 산화물의 전기 전도도는 10$^{-4}$에서 10$^{-1}{\Omega}^{-1}$cm$^{-1}$까지 변하였다. 전기 전도도(${\sigma}$)의 활성화 에너지는 약 1.7 eV이고 산소 압력 의존성(또는 1/n값)은 -1/4 이다. x값, ${\sigma}$값 및 열역학적 data로부터 산화물의 비화학양론적 전도 메카니즘을 논의하였다.

• 대한금속재료학회지
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• 제46권4호
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• pp.249-256
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• 2008

0.5 wt% Al doped ZnO thin films (AZO) were prepared on glass substrates using RF magnetron sputtering method. Thin films were grown at substrate temperature of $250^{\circ}C$, RF power of 75W, working pressure of 10 mTorr, by changing the $O_2/Ar$ pressure ratio from 0% to 16.7%. The effects of oxygen partial pressure during the deposition process on structural and optical properties of the films were investigated using XRD, SEM, AFM, EPMA and UV-visible spectroscopy. All the AZO thin films were grown as hexagonal wurtzite phase with the c-axis preferred out-of-plane orientation. The surface roughness and grain size of AZO films decreased with increasing oxygen ratio from 10.6 nm to 3.2 nm and 94.9 nm to 30.9 nm, respectively. On the other hand, the transmittance and band gap energy of the AZO films increased from 84.7% to 92.6% and 3.24 eV to 3.28 eV, respectively with increasing the $O_2/Ar$ pressure ratio.