• Title/Summary/Keyword: $O_2$ gas

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Surface Flashover Characteristics on Poor Contact in N2/O2 Mixture Gas under Non-Uniform Field (불평등 전계 중 불량 접촉갭에 관한 N2/O2 혼합가스의 연면플래쉬오버특성)

  • Lim, Dong-Young;Choi, Eun-Hyeok;Choi, Sang-Tae;Choi, Byoung-Ju;Lee, Kwang-Sik;Bae, Sungwoo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.29 no.8
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    • pp.63-69
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    • 2015
  • This paper presents the surface flashover characteristics to simulate the poor contact between an anode and a solid dielectric in a $N_2/O_2$ mixture gas (8/2) under a non-uniform field. The surface flashover voltage of the $N_2/O_2$ mixture gas revealed the irregular tendency that was not in accordance with the Paschen's law with an increasing gap of the poor contact. In addition, the insulation performance of the $N_2/O_2$ mixture gas at 0.6MPa was comparable to that of $SF_6$ gas of 0.1MPa based on the insulation performance on the poor contact. These results are able to apply the insulation design of eco-friendly gas insulation switchgear considering the internal faults.

Synthesis and Low-concentration (50 ppm) NO2 Sensing Properties of Bare and ZnO (n) Decorated TeO2 (p) Nanowires (ZnO가 첨가된 TeO2 나노와이어의 합성 및 저농도(50 ppm) 이산화질소 가스 센싱 특성)

  • Yu, Dong Jae;Shin, Ka Yoon;Oum, Wansik;Kang, Suk Woo;Kim, Eun Bi;Kim, Hyeong Min;Kim, Hyoun Woo
    • Korean Journal of Materials Research
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    • v.32 no.10
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    • pp.435-441
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    • 2022
  • We report the synthesis and gas sensing properties of bare and ZnO decorated TeO2 nanowires (NWs). A catalyst assisted-vapor-liquid-solid (VLS) growth method was used to synthesize TeO2 NWs and ZnO decoration was performed using an Au-catalyst assisted-VLS growth method followed by a subsequent heat treatment. Structural and morphological analyses using X-ray diffraction (XRD) and scanning/transmission electron microscopies, respectively, demonstrated the formation of bare and ZnO decorated TeO2 NWs with desired phase and morphology. NO2 gas sensing studies were performed at different temperatures ranging from 50 to 400 ℃ towards 50 ppm NO2 gas. The results obtained showed that both sensors had their best optimal sensing temperature at 350 ℃, while ZnO decorated TeO2 NWs sensor showed much better sensitivity towards NO2 relative to a bare TeO2 NWs gas sensor. The reason for the enhanced sensing performance of the ZnO decorated TeO2 NWs sensor was attributed to the formation of ZnO (n)/ TeO2 (p) heterojunctions and the high intrinsic gas sensing properties of ZnO.

Sensitivity Characteristics on the Composition Change of the Gas Sensing Materials based on $In_2O_3$ Semiconductor. ($In_2O_3$계 반도성 가스감지재료의 조성변화에 따른 감도특성)

  • 정형진;유광수
    • Journal of the Korean Ceramic Society
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    • v.22 no.4
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    • pp.54-60
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    • 1985
  • Gas sensing materials for detecting flammable gases such as $CH_4$, $C_3H_8$ and n-$C_4H_{10}$ were developed by util-izing $In_2O_3$ as the principal sensing material. The sensing materials were formulated by mixing $In_2O_3$ powder with one or two other chemicals such as $SnO_2$, $Y_2O_3$ and $Al_2O_3$ with a small addition of $PdCl_2$ as a catalyst. Sample of sensor were fabricated by coating each of the mixtures on a ceramic tube impregnating ethylsili-cate and firing at 75$0^{\circ}C$ Each material mixture was evaluated by measuring and comparing gas sensitivity(resistance in air/resistance with gas) to flammable gases such as $CH_4$, $C_3H-8$ and n-$C_4H_{10}$. It was found that among fifteen compositions tested three compositions as follows show the highest gas sensitivity and thus are very feasible for commercialization as the gas sensors ; o49.5 $In_2O_3$+50 Al2O3_0.5 PdCl2(wt%) o $20In_2O_3+29$ $SnO_2+50$ $Al_2O_3+1$ $PdCl_2$(wt%) o40 $In_2O_3$+9 $Y_2O_3+50$ $Al_2O_3+1$ $PdCl_2$(wt%)

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The Doping and Plasma Effects on Gas Sensing Properties of α-Fe2O3 Thin Film

  • Choi, J.Y.;Jang, G.E.
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.5
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    • pp.189-193
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    • 2004
  • Pure and Sn or Pt doped $\alpha-Fe_2O_3$ thin films were prepared on $Al_2O_3$ substrates by RF-magnetron sputtering method and the sensitivities were compared. It was found that pure $\alpha-Fe_2O_3$ thin films did not exhibit much selectivity in CO and $i-C_4H_{10}$ gases while it showed the high sensitivity in proportion to the gas concentration of $C_2H_{5}OH$ gas. Pt-doped $\alpha-Fe_2O_3$ showed to be alike sensing properties as pure $\alpha-Fe_2O_3$ thin film in $C_2H_{5}OH$ gas. However, Sn-doped $\alpha-Fe_2O_3$ thin films exhibited the excellent sensitivity and selectivity in Hz gas. After microstructure modification by plasma etching on pure $\alpha-Fe_2O_3$ thin films, the gas sensing characteristics were dramatically changed.

Characteristics of CuO doped WO3-SnO2 Thick Film Gas Sensors (CuO가 첨가된 WO3-SnO2 후막 가스센서 특성 연구)

  • Lee, Don-Kyu;Shin, Deuck-Jin;Yu, Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.12
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    • pp.956-960
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    • 2010
  • CuO doped $WO_3-SnO_2$ thick film gas sensors were fabricated by screen printing method on alumina substrates and heat-treated at $350^{\circ}C$ in air. The effects of mixing ratio of $WO_3$ with $SnO_2$ on the structural and morphological properties of $WO_3-SnO_2$ were investigated X-ray diffraction and Scanning Electron Microscope. The structural properties of the $WO_3-SnO_2$:CuO thick film by XRD showed that the monoclinic of $WO_3$ and the tetragonal of $SnO_2$ phase were mixed. Nano CuO was coated on the $WO_3-SnO_2$ surface and then the surface of $WO_3$ was coated with $SnO_2$ particles with $1\sim1.5{\mu}m$ in diameters, as confirmed form the SEM image. The sensitivity of the $WO_3-SnO_2$:CuO sensor to 2000 ppm $CO_2$ gas and 50 ppm $H_2S$ gas for the various ratio of $WO_3$ and $SnO_2$ was investigated. The 4 wt% CuO doped $WO_3-SnO_2$(75:25) tkick films showed the highest sensitivity to $CO_2$ gas and $H_2S$ gas.

Highly Sensitive Gas Sensors Based on Nanostructured $TiO_2$ Thin Films

  • Jang, Ho-Won;Mun, Hui-Gyu;Kim, Do-Hong;Sim, Yeong-Seok;Yun, Seok-Jin
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.16.1-16.1
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    • 2011
  • $TiO_2$ is a promising material for gas sensors. To achieve high sensitivities, the material should exhibit a large surface-to-volume ratio and possess the high accessibility of the gas molecules to the surface. Accordingly, a wide variety of porous $TiO_2$ nanomaterials synthesized by wet-chemical methods have been reported for gas sensor applications. Nonetheless, achieving the large-area uniformity and comparability with well-established semiconductor production processes of the methods is still challenging. An alternative method is soft-templating which utilizes nanostructured inorganic or organic materials as sacrificial templates for the preparation of porous materials. Fabrication of macroporous $TiO_2$ films and hollow $TiO_2$ tubes by soft-templating and their gas sensing applications have been reported recently. In these porous materials composed of assemblies of individual micro/nanostructures, the form of links or necks between individual micro/nanostructures is a critical factor to determine gas sensing properties of the material. However, a systematic study to clarify the role of links between individual micro/nanostructures in gas sensing properties of a porous metal oxide matrix is thoroughly lacking. In this work, we have demonstrated a fabrication method to prepare highly-ordered, embossed $TiO_2$ films composed of anatase $TiO_2$ hollow hemispheres via soft-templating using polystyrene beads. The form of links between hollow hemispheres could be controlled by $O_2$ plasma etching on the bead templates. This approach reveals the strong correlation of gas sensitivity with the form of the links. Our experimental results highlight that not only the surface-to-volume ratio of an ensemble material composed of individual micro/nanostructures but also the links between individual micro/nanostructures play a critical role in evaluating the sensing properties of the material. In addition to this general finding, the facileness, large-scale productivity, and compatability with semiconductor production process of the proposed fabrication method promise applications of the embossed $TiO_2$ films to high-quality sensors.

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The Changes of CO Gas Sensing Properties of ZnO and $SnO_2$ with Addition $TiO_2$ ($TiO_2$첨가에 의한 ZnO와 $SnO_2$의 일산화탄소 감응특성 변화)

  • Kim, Tae-Won;Choi, U-Sung;Jun, Seon-Taek
    • Korean Journal of Materials Research
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    • v.8 no.4
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    • pp.312-316
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    • 1998
  • ZnO- TiO$_2$, and Sn0$_2$ - Ti0$_2$ ceramic composites doped with TiO$_2$ were prepared and their electrical and 1000ppm CO gas sensing properties were investigated. The phases of samples were analyzed by XRD, and the microsturctures of the fractured surface of samples were observed by SEM. A carbon monoxide gas sensitivity was de¬fined as the ratio of the resistance in dry air atmosphere(R$drt air$) to the resistance in 1000ppm CO gas atmosphere(R$_co$) The CO gas sensitivity of Smol% Ti0$_2$-added ZnO decreased about 1.7 times compared to that of pure ZnO. On the other hand, the maximum CO gas sensitivity of Ti0$_2$-added SnO$_2$ increased about 2.5 times compared to that of pure SnO$_2$. Therefore, the CO gas sensitivies of SnO$_2$-TiO$_2$ composite were better than those of ZnO- Ti0$_2$ and the temper¬ature range showing the maximum sensitivity for Sn0$_2$-TiO$_2$ composite was lower than that for ZnO- Ti0$_2$.

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CO Gas Sensing Characteristic of ZnO Thin Film/Nanowire Based on p-type 4H-SiC Substrate at 300℃ (P형 4H-SiC 기판에 형성된 ZnO 박막/나노선 가스 센서의 300℃에서 CO 가스 감지 특성)

  • Kim, Ik-Ju;Oh, Byung-Hoon;Lee, Jung-Ho;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.2
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    • pp.91-95
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    • 2012
  • ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

Al Doping Effect of Pd/TiO2 for Improved Hydrogen Detection (수소 감지 성능 향상을 위한 Pd/TiO2 분말에서의 Al 도핑 효과)

  • Lee, Yeongan;Seo, Hyungtak
    • Journal of Sensor Science and Technology
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    • v.23 no.3
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    • pp.207-210
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    • 2014
  • $TiO_2$ oxide semiconductor is being widely studied in various applications such as photocatalyst and photosensor. Pd/$TiO_2$ gas sensor is mainly used to detect $H_2$, CO and ethanol. This study focus on increasing hydrogen detection ability of Pd/$TiO_2$ in room temperature through Al-doping. Pd/$TiO_2$ was fabricated by the hydrothermal method. Contacting to Aluminum (Al) foil led to Al doping effect in Pd/$TiO_2$ by thermal diffusion and enhanced hydrogen sensing response. $TiO_2$ nanoparticles were sized at ~30 nm of diameter from scanning electron microscope (SEM) and maintained anatase crystal structure after Al doping from X-ray diffraction analysis. Presence of Al in $TiO_2$ was confirmed by X-ray photoelectron spectroscopy at 73 eV. SEM-energy dispersive spectroscopy measurement also confirmed 2 wt% Al in Pd/$TiO_2$ bulk. The gas sensing test was performed with $O_2$, $N_2$ and $H_2$ gas ambient. Pd/Al-doped $TiO_2$ did not response $O_2$ and $N_2$ gas in vacuum except $H_2$. Finally, the normalized resistance ratio ($R_{H2on}/R_{H2off}$) of Pd/Al-doped $TiO_2$ increases about 80% compared to Pd/$TiO_2$.

Characteristics of CuO doped WO3 Thick Film for Gas Sensors (CuO가 첨가된 WO3 후막 가스센서 특성 연구)

  • Yu, Il;Lee, Don-Kyu;Shin, Deuck-Jin;Yu, Yoon-Sik
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.9
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    • pp.1621-1625
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    • 2010
  • Recently, due to increase in the usage of toxic gas and inflammability gas, the ability to monitor and precisely measurement of these gases is crucial in preventing the occurrence of various accidents. CuO doped and undoped $WO_3$ thick films gas sensors were prepared using screen-printing method on alumina substrates. A structural properties of $WO_3$:CuO thick films had monoclinic phase and triclinic phase of $WO_3$ together. Sensitivity of $WO_3$:CuO sensor at 2000 ppm of $CO_2$ gas and 50 ppm of $H_2S$ gas was investigated. 4 wt% Cu doped $WO_3$ thick films had the highest sensitivity of $CO_2$ gas and $H_2S$ gas.