• 한국재료학회지
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• 제22권7호
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• pp.358-361
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• 2012

Co and Ni as catalysts in $SnO_2$ sensors to improve the sensitivity for $CH_4$ gas and $CH_3CH_2CH_3$ gas were coated by a solution reduction method. $SnO_2$ thick films were prepared by a screen-printing method onto $Al_2O_3$ substrates with an electrode. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a chamber. The structural properties of $SnO_2$ with a rutile structure investigated by XRD showed a (110) dominant $SnO_2$ peak. The particle size of the $SnO_2$:Ni powders with Ni at 6 wt% was about 0.1 ${\mu}m$. The $SnO_2$ particles were found to contain many pores according to a SEM analysis. The sensitivity of $SnO_2$-based sensors was measured for 5 ppm of $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air to that in the target gases. The results showed that the best sensitivity of $SnO_2$:Ni and $SnO_2$:Co sensors for $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature was observed in $SnO_2$:Ni sensors coated with 6 wt% Ni. The $SnO_2$:Ni gas sensors showed good selectivity to $CH_4$ gas. The response time and recovery time of the $SnO_2$:Ni gas sensors for the $CH_4$ and $CH_3CH_2CH_3$ gases were 20 seconds and 9 seconds, respectively.

• 한국재료학회지
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• 제20권8호
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• pp.408-411
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• 2010

Indium doped $SnO_2$ thick films for gas sensors were fabricated by a screen printing method on alumina substrates. The effects of indium concentration on the structural and morphological properties of the $SnO_2$ were investigated by X-ray diffraction and Scanning Electron Microscope. The structural properties of the $SnO_2$:In by X-ray diffraction showed a (110) dominant $SnO_2$ peak. The size of $SnO_2$ particles ranged from 0.05 to $0.1\;{\mu}m$, and $SnO_2$ particles were found to contain many pores, according to the SEM analysis. The thickness of the indium-doped $SnO_2$ thick films for gas sensors was about $20\;{\mu}m$, as confirmed by cross sectional SEM image. Sensitivity of the $SnO_2$:In gas sensor to 2000 ppm of $CO_2$ gas and 50 ppm of H2S gas was investigated for various indium concentrations. The highest sensitivity to $CO_2$ gas and H2S gas of the indium-doped $SnO_2$ thick films was observed at the 8 wt% and 4 wt% indium concentration, respectively. The good sensing performances of indium-doped $SnO_2$ gas sensors to $CO_2$ gas were attributed to the increase of oxygen vacancies and surface area in the $SnO_2$:In. The $SnO_2$:In gas sensors showed good selectivity to $CO_2$ gas.

• 한국정보통신학회논문지
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• 제10권9호
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• pp.1641-1647
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• 2006

나노입자 크기를 가진 얇은 $SnO_2$ 박막을 이용하여 CO 및 $H_2S$에 대한 우수한 감도를 가지는 복합 마이크로 가스센서 어레이를 제작하였다. 나노입자의 박막을 만들기 위해서 약 $2500{\AA}$ 두께의 $SnO_2,\;SnO_2(+Pt),\;SnO_2(+CuO)$ 막을 셰도우마스크를 사용하여 형성 한 후, 이를 $600{\sim}800^{\circ}C$의 온도에서 산화하므로서 나노입자의 $SnO_2$ 모물질의 가스감지 박막을 형성하였다. 실리콘 기판의 마이크로센서의 형태로 제작된 $SnO_2(Pt)$ 및 $SnO_2(+CuO)$ 가스센서는 각각 CO 및 $H_2S$ 가스에 대한 매우 우수한 감도를 나타내는 것을 확인하였다.

• 한국재료학회지
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• 제21권4호
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• pp.207-211
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• 2011

Ni 8 wt.%-doped tin oxide ($SnO_2$) thick films were fabricated into gas sensors by the method of screen printing onto alumina substrates. The particle size of $SnO_2$ was controlled by changing the ball-mill time between 0~120 h. The structural and morphological properties of these thick films were investigated using X-ray diffraction and scanning electron microscopy. The structural properties of $SnO_2$ powders showed a tetragonal phase with (110) dominant orientation. The particle size of the $SnO_2$:Ni powders after ball-mill of 120 h was about 0.05 ${\mu}m$. The gas sensitivity (S = Rg/Ra) to 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas was measured at room temperature by comparing the resistance in air (Ra) with that of the target gases (Rg). The sensitivity of the $SnO_2$ gas sensors was enhanced by increasing the ball-mill time. There was an association between the sensitivity of both the $CH_4$ gas and the $CH_3CH_2CH_3$ gas and the particle size of the $SnO_2$. $SnO_2$ gas sensors prepared by 72 h ball-mill showed a sensitivity of about 13 to 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas. The response time of the $SnO_2$:Ni gas sensors to the $CH_4$ gas was about 20 seconds.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.359-359
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• 2011

This study reports the H2S gas sensing properties of CuO / ZnO nano-hetero structure bundle and the investigation of gas sensing mechanism. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and CuO / ZnO nano-heterostructures were prepared by photo chemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. In order to improve the H2S gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by photo-chemical deposition of CuO on the ZnO nanorods bundle. The furnace type gas sensing system was used to characterize sensing properties with diluted H2S gas (50 ppm) balanced air at various operating temperature up to 500$^{\circ}C$. The H2S gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. Photo-chemically fabricated CuO/ZnO heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with H2S gas.

• 한국세라믹학회지
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• 제27권5호
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.209-212
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• 1991

Recently, oxide semiconductor gas sensors consisted of n-type semiconductor materials such as $SnO_2$, ZnO and $Fe_2O_3$ have been widely used to detect reducing gases. The advantage of thick-film technology include the possibility of mass-production and automation, that of integrating the sensing element in a hybrid circuit and that of fuctional trimming of the sensor and/or the circuit. which would enable really interchangeable transducers to be prepared. In this paper, we made ZnO and $SnO_2$ gas sensors and investigated the sensitivity to CO gas. Therefore, we compared a ZnO gas sensor with a $SnO_2$ gas sensor.

• Journal of information and communication convergence engineering
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• 제4권1호
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• pp.18-22
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• 2006

A small-sized gas identification system has been fabricated and characterized using an integrated gas sensor array and artificial neural-network. The sensor array consists of four thick-film oxide semiconductor gas sensors whose sensing layers are $In_{2}O_{3}-Sb_{2}O_{5}-Pd-doped\;SnO_2$ + Pd-coated layer, $La_{2}O_{5}-PdCl_{2}-doped\;SnO_2,\;WO_{3}-doped\;SnO_{2}$ + Pt-coated layer and $ThO_{2}-V_{2}O_{5}-PdCl_{2}\;doped\;SnO_{2}$. The small-sized gas identification instrument is composed of a GMS 81504 containing an internal ROM (4k bytes), a RAM (128 bytes) and four-channel AD converter as MPU, LEDs for displaying alarm conditions for three gases (liquefied petroleum gas: LPG, liquefied natural gas: LNG and carbon monoxide: CO) and interface circuits for them. The instrument has been used to identify alarm conditions for three gases among the real circumstances and the identification has been successfully demonstrated.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.288-292
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• 1998

In this paper, we fabricated $SnO_2$ composite ceramics doped with 0~20mol% $SnO_2$ of bulk type to investigate the CO and $H_2$ gas sensitivity in various composition, temperature, and concentration of CO and $H_2$ gas. At the temperature range from $100^{\circ}C\sim425^{\circ}C$, the measured 1000ppm and 250ppm CO gas sensitivities of $SiO_2-SnO_2$composite ceramics were about 1.0~7.6 and 1.0~5.6, respectively. These values were about 1.0~1.5 times larger than pure $SnO_2$. The maximum 1000ppm CO gas sensitivity of $SiO_2-SnO_2$composites were measured around $325^{\circ}C$. At the temperature range from $270^{\circ}C\sim380^{\circ}C$, the 1000ppm and 500ppm $H_2$gas sensitivities of $SiO_2-SnO_2$ composites were about 2.9~21.2 and 2.1~11.3, respectively. Also the maximum 1000, 500 ppm $H_2$ gas sensitivities of samples were measured around.

• 제어로봇시스템학회논문지
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• 제13권7호
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• pp.616-623
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• 2007

A dual micro gas sensor array was fabricated using nano sized $SnO_2$ thin films which had good sensitivities to CO and combustible gases, or $H_2S$ gas for air quality sensors in automobile. The already existed air quality sensor detects oxidizing gases and reducing gases, the air quality sensor(AQS), located near the fresh air inlet detected the harmful gases, the fresh air inlet door/ventilation flap was closed to reduce the amount of pollution entering the vehicle cabin through HVAC(heating, ventilating, and air conditioning) system. In this study, to make $SnO_2$ thin film AQS sensor, thin tin metal layer between 1000 and $2000{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2$, $SnO_2$(pt) and $SnO_2$(+CuO) were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2$(+Pt) and $SnO_2$(CuO) showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.