• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2005.05a
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• pp.35-39
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• 2005

This paper presents a method to reduce hysteresis in multilayer ceramic actuator by connecting the actuator with a capacitor in a series circuit. The change in hysteresis with respect to the capacitor was examined. $0.2Pb(Mg_{1/3}Nb_{2/3})O_3-0.8Pb(Zr_{0.475}Ti_{0.525})O_3$ ceramic material was used as a piezoelectric material for the actuator. Displacement of the actuator was measured in a capacitive gap sensor measuring system. In case of inserting a capacitor in a total circuit, hysteresis became dramatically decreased, and then finally the hysteresis value can be reduced below $0.2\%$. It was found in this present study that reducing the hysteresis in the actuator is dependent upon the characteristics of the capacitor in total circuit and also operating frequency.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.99-107
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• 2003

The diffusion coefficient of Xe-133 was obtained from an annealing test. The specimens were made from a UO$_2$ single crystal powder with natural enrichment. Weight and grain size were 300mg and ($23\mu\textrm{m}$, respectively. Oxygen potentials were obtained from an oxygen sensor. Released fractions were obtained from both results of gamma scans and quantitative analysis with MCNP code, The annealing test was performed at three temperatures at once. Diffusion coefficients of Xe-133 were calculated using slope of Booth theory in each O/M ratios. Activation energy and the pre-exponential factor of the diffusion coefficient were obtained. The activation energy of near stoichiomeric $UO_2$ is 310 kJ/mol. The measured values of near stoichiometric $UO_2$ are very close to other data available. Diffusion coefficients increase with hyper-stoichiometry, due to higher concentration of cation vacancies.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.163-167
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• 1999

LiNbO$_3$films were prepared by an rf-magnetron sputtering technique using sintered target containing potassium. The potassium was included to help to fabricate stoichiometric LiNbO$_3$film. Structural and electrical properties of thin films was investigated as a function of deposition condition. Optimum sputtering conditions were rf power of 100W, working pressure of 1m Torr and substrate temperature of 58$0^{\circ}C$. The thin film was grown to (012) preferred orientation. The dielectric constant of the thin film LiNbo$_3$ fabricated under optimum condition was 55 at 1MHz. Average grain size is about 200$\AA$ and roughness of the film is small enough to apply to optic devices.

• Journal of radiological science and technology
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• v.21 no.2
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• pp.47-52
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• 1998

Tissue-equivalent $MgB_4O_7$ TL phosphors were prepared and the effects of Lantanides series activators on TLD properties of the phosphors were studied. The glow curve of TLD increased TL intensity and the peak temperature is low that is, the heating rate is $10^{\circ}C/sec$. The activation energy of the main peak estimated by the peak shape method. By these methods, the estimated activation energies were $0.76{\sim}1.55eV$ respectively. The TL phosphors prepared in this work may be utilized to radiation sensor elements because of this high sensitivity to X-ray.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.24-34
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• 1997

In this study, two different types of complementary electrochromic devices using amorphous $WO_{3}$ films as a working electrode, $V_{2}O_{5}$ film and NiO film as counter electrodes respectively were investigated. For the devices using amorphous and crystalline $V_{2}O_{5}$ films of $100{\sim}150nm$ thickness with $ITO/WO_{3}/LiClO_{4}-PC/V_{2}O_{5}/ITO$ structure, an optical modulation of $50{\sim}60%$ were obtained at a potential range of $1{\sim}2V$. It has been shown that transmittance and reflectance of light could be electrically controlled by low applied voltage. For the devices with $ITO/WO_{3}/LiClO_{4}-PC/NiO/ITO$ structure in which NiO film was deposited by a RF reactive sputtering, the optical modulation in visible light region (${\lambda}=550nm$) and in near infrared light region (${\lambda}=850nm$) were 25% and 30%, respectively.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.6
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• pp.279-282
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.

• Journal of Korean Society of Water and Wastewater
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• v.31 no.5
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• pp.397-407
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• 2017

A dimensionally stable anode based on the $RuO_2$ electrocatalyst is an important electrode for generating chlorine. The $RuO_2$ is well-known as an electrode material with high electrocatalytic performance and stability. In this study, sonoelectrodeposition is proposed to synthesize the $RuO_2$ electrodes. The electrode obtained by this novel process shows better electrocatalytic properties and stability for generating chlorine compared to the conventional one. The high roughness and outer surface area of the $RuO_2$ electrode from a new fabrication process leads to increase in the chlorine generation rate. This enhanced performance is attributed to the accelerated mass transport rate of the chloride ions from electrolyte to electrode surface. In addition, the electrode with sonodeposition method showed higher stability than the conventional one, which might be explained by the mass coverage enhancement. The effect of sonodeposition time was also investigated, and the electrode with longer deposition time showed higher electrocatalytic performance and stability.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.633-638
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• 1995

Two types of $Ta_2O_{5}$, films, prepared by thermal oxidation and PECVD, on P-type(100) Si wafers were studied to examine the relationship between electrical properties and stresses of the films. For the thermally oxidized films, Ta films were depositied on the Si wafers by dc magnetron sputtering followed by thermal oxidation as functions of oxidation temperature and time. The PECVD films were deposited on the Si wafers as a fuction of RF power density. The relationship between the electrical properties and film stresses were studied. In the case of thermally oxidized $Ta_2O_{5}$ film, the electrical properties and film stress were not found to be dependent on each other, while PECVD $Ta_2O_{5}$ films showed that the electrical properties were depended on the film stress.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.421-426
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• 1999

In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.382-387
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• 2020

Hydrogen (H₂) is considered as a new clean energy resource for replacing petroleum because it produces only H₂O after the combustion process. However, owing to its explosive nature, it is extremely important to detect H₂ gas in the ambient atmosphere. This has triggered the development of H₂ gas sensors. 2-dimensional (2D) graphene has emerged as one of the most promising candidates for chemical sensors in various industries. In particular, graphene exhibits outstanding potential in chemoresistive gas sensors for the detection of diverse harmful gases and the control of indoor air quality. Graphene-based chemoresistive gas sensors have attracted tremendous attention owing to their promising properties such as room temperature operation, effective gas adsorption, and high flexibility and transparency. Pristine graphene exhibits good sensitivity to NO₂ gas at room temperature and relatively low sensitivity to H₂ gas. Thus, research to control the selectivity of graphene gas sensors and improve the sensitivity to H₂ gas has been performed. Noble metal decoration and metal oxide decoration on the surface of graphene are the most favored approaches for effectively controlling the selectivity of graphene gas sensors. Herein, we introduce several strategies that enhance the sensitivity of graphene gas sensors to H₂ gas.