• Progress in Superconductivity
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• v.3 no.1
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• pp.36-40
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• 2001

We have studied vortex dynamics in$ Bi_2$$Sr_2$$CaCu_2$O$_{8}$single crystals of unirradiated and irradiated samples by using 100 $\times$ $100\mu\textrm{m}^2$Hall sensor. Doses equivalent magnetic fields are 20 G, 100 G and 1 kG. In the magnetization measurement, a second magnetization peak (SMP) was observed in unirradiated, 20 G dose and 100 G dose samples in contrast to 1 kG dose sample. In the unirradiated sample, the SMP was observed in the range of 18 K ~ 35 K and the amplitude of the SMP decreased with increasing temperature. With increase of the irradiation dose, temperature region and sharpness of the SMP were reduced. In the magnetic relaxation measurement, we observed that the normalized relaxation rate S decreased with increasing the irradiation dose. Our results suggest that the vortex dynamics is not greatly affected by low-density columnar defects.s.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.2
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• pp.161-167
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• 2011

Proton conductors have attracted considerable attention for solid oxide fuel cell (SOFC), hydrogen pump, gas sensor, and membrane separators. Doped $SrCeO_3$ exhibits appreciable proton conductivity in hydrogen-containing atmosphere at high temperature. However commercial realization has been hampered due to the reactivity of $SrCeO_3$ with $CO_2$. The chemical stability and proton conductivity are dependent on dopant type. The purpose of this work is to investigate chemical stability of $SrCe_{0.95}Gd_{0.05}O_{3-\alpha}-Ce_{0.9}Gd_{0.1}O_{2-\beta}$ composites in $CO_2$ and $H_2$ gases. Thermogravimetric analysis (TGA) was performed in gaseous $CO_2$ and electrical conductivity of the composites were also measured between 500 and $900^{\circ}C$ in air and $H_2$ atmosphere. $SrCe_{0.95}Gd_{0.05}O_{3-\alpha}-Ce_{0.9}Gd_{0.1}O_{2-\beta}$ composite membranes showed good chemical stability of in $CO_2$ atmosphere and high conductivity at hydrogen condition. The hydrogen permeation of $SrCe_{0.95}Gd_{0.05}O_{3-\alpha}-Ce_{0.9}Gd_{0.1}O_{2-\beta}$ composite membranes was investigated as a function of volumetric content of $SrCe_{0.95}Gd_{0.05}O_{3-\alpha}$. The $SrCe_{0.95}Gd_{0.05}O_{3-\alpha}-Ce_{0.9}Gd_{0.1}O_{2-\beta}$(6:4) membrane with a thickness of 1.0 mm showed the highest hydrogen permeability with the flux reaching of 0.12 $ml/min{\cdot}cm^2$ at $800^{\circ}C$ in 100%$H_2/N_2$ as feed gas.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.3
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• pp.438-443
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• 2006

The probe type sensor using strain gauges was used to track a container box's seam in this paper. A strain gauge has a property which the specific resistance is changed by varying of the sectional area and length when tensile and compressive stresses are generated at the strain gauge. We designed the automatic seam tracking device by attaching the probe type strain gauge sensor, motor driving slide, encorder to check the moving distance and interface card connected MPU upside the speed controllable carriage. The folded work piece for a container box is made to examine whether the device can track the seam automatically or not. Seam tracking experiments were done by changing the carriage moving speed at 300. 400. 500. 600[mm/min] each as the voltage of side track was 2.5[V]. We compared and analyzed the sampling data which is obtained by output voltage of strain gauge sensor and rotary encorder pulse every 100 [m/s]. The welding experiments were performed by using $CO_2$ welding machine about the carriage moving speed that has good seam tracking condition in the seam tracking experiments above. And we compared the seam tracking status.

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3592-3596
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• 2011

A novel poly(vinylchloride)-based membrane sensor using $N^1$,$N^3$,$N^5$-tris(2-(2,3-dihydroxybenzylamino)-ethyl)cyclohexane-1,3,5-tricarboxamide (CYCOENCAT, L) as ionophore has been prepared and explored as $Fe^{3+}$ selective electrode. The membrane electrode composed of ionophore, poly(vinylchloride) and o-nitropheyloctyl ether in the optimum ratio 4:33:63 gave excellent potentiometric response characteristics, and displayed a linear log[$Fe^{3+}$] versus EMF response over a wide concentration range of $1.0{\times}10^{-5}-1.0{\times}10^{-1}$ M with super nernstian slope of 28.0 mV/decade and the detection limit of $8.0{\times}10^{-6}$ M. The proposed ion selective electrode showed fast response time (< 15 s), wide pH range (3.0-7.0), high non-aqueous tolerance (up to 20%) and adequate long life time (120 days). It also exhibited very good selectivity for $Fe^{3+}$ relative to a wide variety of alkali, alkaline earth, transition and heavy metal ions. Further, the analytical applicability of the sensor was tested as an indicator electrode in the potentiometric titration of $Fe^{3+}$ with EDTA.

• Journal of Ocean Engineering and Technology
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• v.31 no.2
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• pp.164-169
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• 2017

Studies were performed on an ARS using SDINS's RLG and the geomatic sensor. To develop the ARS, experiments were performed to determine the characteristics of the RLG and geomatic sensor. Based on the results, to reduce the angular position errors of the RLG, which accumulate from the angular velocity data, an algorithm was studied that uses the Extended Kalman filter (EKF) to compensate the RLG data and geomatic sensor data. To verify the performance of the developed algorithm for reducing the cumulative angular errors, experiments that included the developed EKF were performed. Through these, it was shown that a drastic reduction in the angular errors of the RLG were achieved.

• Nuclear Engineering and Technology
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• v.51 no.1
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• pp.293-302
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• 2019

Many researches have been done to develop and improve the performance of personal (individual) dosimeter response to cover a wide of neutron energy range (from thermal to fast). Depending on the individual category of the dosimeter, the semiconductor sensor has been used to simplify and lightweight. In this plan, it's very important to have a fairly accurate counting of doses rate in different energies. With a general design and single-sensor simulations, all optimal thicknesses have been extracted. The performance of the simulation scheme has been compared with the commercial and laboratory samples in the world. Due to the deviation of all dosimeters with a flat energy response, in this paper, has been used an idea of one semi-conductor sensor to have the flat energy-response in the entire neutron energy range. Finally, by analyzing of the sensors data as arrays for the first time, we have reached a nearly flat and acceptable energy-response. Also a comparison has been made between Lucite-PMMA ($H_5C_5O_2$) and polyethylene-PE ($CH_2$) as a radiator and $B_4C$ has been studied as absorbent. Moreover, in this paper, the effect of gamma dose in the dosimeter has been investigated and shown around the standard has not been exceeded.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.37-42
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• 1995

The PLT thin films on MgO substrate have been fabricated by RF magnetron sputtering and the dependence of properties on fabrication conditions have been studied. The PbO-rich target was used and the optimum fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, $Ar/O_{2}$ ratio, and rf power was $640^{\circ}C$, 10 mTorr, 10:1, and $1.7\;W/cm^{2}$, repectively. In these conditions, the PLT thin film showed the deposition rate of $62.5\;{\AA}/min$, the Pb/Ti ratio of 1/2, and the dielectric constant of 200. The PLT thin film showed good c-axis orientation and crystalinity according to XRD and SEM analysis.

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.102-106
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• 1997

Micro gas sensors including thin film catal) tic type require stress-free memhrancs for etch stop of Si anisotropic etching and sublayer of sensing elements hecause stress is one of the main factors affecting breakdown of thin membranes. This paper reports the effects of deposition conditions on stress and refractive index of $SiN_{x}/SiO_{x}/(NON)$ films deposited by low pressure c11ernic;rl vapor deposition(L, t'CVI)) 2nd reactve sputtering. In the case of I.PCVI1, the stresses of $SiN_{x}$ and NON films arc $7.6{\times}10^{8}dyne/cm^2$ and $3.3{\times}10^{8}dyne/cm^2$, respectibely, and the refractive indices are 3.05 and 152, respectively. In the cxse oi the sputtered SiN, , compressi\e stress decreased in magnitude and then turned to tensility as increasing proc, ess pressure by lmtorr to 30mtorr and cicreasmg applied power density by $2.74W/cm^2$ to $1.10W/cm^2$. The hest value of film stress obt;~ined under condition of lOmtorr and $1.37W/cm^2$ in this' experiment was $1.2{\times}10^{9}dyne/cm^2$ cnnipressive. The refr~ict~ve index decreased from 2 05 to 1 89 as decreasing applied power density by lnitorr to 3Orntorr and increasing process pressure hy $2.74W/cm^2$ to $1.10W/cm^2$. Stresses of films deposited by both LPCVL) and sputtering decreased as incre;lsing temperature and showed plastic behavior as decreasing temperature.

• Journal of IKEEE
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• v.24 no.4
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• pp.1172-1175
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• 2020

Automotive ECU integrates CPU core, IVN controller, memory interface, sensor interface, I/O interface, and so on. Current automotive ECUs are often developed with proprietary processor architectures. However, demends for standard processors such as ARM and RISC-V increase rapidly for saftware compatibility in autonomous vehicles and connected cars. In this paper, an automotive ECU is designed for parking assist system based on RISC-V with open instruction set architecture. It includes 32b RISC-V CPU core, IVN controllers such as CAN and LIN, memory interfaces such as ROM and SRAM, and I/O interfaces such as SPI, UART, and I2C. Fabricated in 65nm CMOS technology, its operating frequency, area, and gate count are 50MHz, 0.37㎟, and 55,310 gates, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.9
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• pp.536-542
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• 2018

Tin dioxide, $SnO_2$, is a well-known n-type semiconductor that shows change in resistance in the presence of gas molecules, such as $H_2$, CO, and $CO_2$. Considerable research has been done on $SnO_2$ semiconductors for gas sensor applications due to their noble property. The nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in the sensing of gas molecules. In this study, SnO nanoplatelets were grown densely on Si substrates using a thermal CVD process. The SnO nanostructures grown by the vapor transport method were post annealed to a $SnO_2$ phase by thermal CVD in an oxygen atmosphere at $830^{\circ}C$ and $1030^{\circ}C$. The pressure of the furnace chamber was maintained at 4.2 Torr. The crystallographic properties of the post-annealed SnO nanostructures were investigated by Raman spectroscopy and XRD. The change in morphology was confirmed by scanning electron microscopy. As a result, the SnO nanostructures were transformed to a $SnO_2$ phase by a post-annealing process.