• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1555-1557
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• 2004

The Pt-doped $SnO_2$ thin film for CO sensor applications obtained by RF sputtering from a target of the same compound in an Ar-$O_2$ atmosphere. Pt-SnO2-SiC Schottky diode detection of CO gas Cause the remarkable change in electrical resistivity of the semiconductor. the good gas sensitivity is shown when annealing condition is 600$^{\circ}C$, 1hr in RTP and detected temperature is 350$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.93-96
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Proceedings of the KOSOMBE Conference
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• v.1998 no.11
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• pp.129-130
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• 1998

In this paper, We designed the ECG-NIBP-$SpO_2$ patient monitor. This production can measure Electrocardiograph, Heart Rate, Noninvasive Blood Pressure, and Oxygen Saturation for Noninvasive Mehod and can display each information. These informations were implemented by the electrodes of ECG part, the cuff of NIBP module and the finger probe with light sensor of $SpO_2$ without injection of needle or catheter. In addition, We developed a new analysis algorithm and measurement technique for NIBP and $SpO_2$ to observe patient's conditions correctly.

• Journal of the Korea institute for structural maintenance and inspection
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• v.2 no.2
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• pp.170-176
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• 1998

The team mixed PbO, $ZrO_2$, $TiO_2$, $Nb_2O_5$ and $MnCO_3$, to make $Pb[(Zr_{0.54}\;Ti_{0.46})\;Nb_{0.005}]O_3+4%MnCO_3$. The electroded PZT ceramics were poled by 3 kV/mm at $110^{\circ}C$ for 600 s. We assembled the 0.4mm thick PZT slices into ultrasonic transducers. Central frequency of the probe is 5 MHz, which is proper to the thickness gauge for steel pipes and for flaw detector. The probe can detect a disk shape defect of 1mm diameter at 15cm deep in steel block. The new probe's Fresnel zone that the ultrasonic beam do not broaden is 13mm. Over the Fresnel zone, the ultrasonic beam spreads. Half of the beam spread angle of the probe is $4.3^{\circ}-4.6^{\circ}$. This probe can be used for the ultrasonic transducers for non-destructive testing of steel bridges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.389-392
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.184-187
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.

• Journal of the Korean institute of surface engineering
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• v.50 no.4
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• pp.296-300
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• 2017

NiO nanofibers with Au nanoparticles were synthesized by sol-gel and electrospinning techniques, in which the reduction process by ultraviolet exposure is included for the growth of Au nanoparticles in the electrospinning solution. FE-SEM(Field Emission Scanning Electron Microscopy), TEM(Transmission Electron Microscopy) revealed that the synthesized nanofibers had the diameter of approximately 200 nm. X-ray diffraction showed the successful formation of Au-decorated NiO nanofibers. Gas sensing tests of Au-decorated NiO nanofibers were performed using reducing gases of CO, and $C_6H_6$, $C_7H_8$, $C_2H_5OH$. Compared to as-synthesized NiO nanofibers, the response of Au-loaded NiO nanofibers to CO gas was found to be about 3.4 times increased. On the other hand, the response increases were only 1.1-1.3 times for $C_6H_6$, $C_7H_8$, and $C_2H_5OH$.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.371-377
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• 2002

$Y_2O_3:Eu^{3+}$ and Li-doped $Y_2O_3:Eu^{3+}$ thin films have been grown on sapphire substrates using a pulsed laser deposition technique. The thin film phosphors were deposited at a substrate temperature of $600^{\circ}C$ under the oxygen pressure of 100, 200 and 300 mTorr. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity and photoluminescence (PL) of the films are highly dependent on the oxygen pressure. The PL brightness data obtained from $Y_2O_3:Eu^{3+}$ films grown under optimized conditions have indicated that sapphire is one of the most promising substrate for the growth of high quality $Y_2O_3:Eu^{3+}$ thin film red phosphor. In particular, the incorporation of $Li^{+}$ ions into $Y_2O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped $Y_{1.84}Li_{0.08}Eu_{0.08}O_3(Y_2O_3LiEu)$, whose brightness was increased by a factor of 2.7 in comparison with that of $Y_2O_3:Eu^{3+}$ films. This phosphor may promise for application to the flat panel displays.

• Journal of the Korean institute of surface engineering
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• v.40 no.6
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• pp.258-261
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• 2007

Relationships between the electrical resistivity and the growth characteristic of $SnO_2$ thin films were investigated. $SnO_2$ thin films with thickness from 64 nm to 91 nm were made by controlling the RF deposition energy from 80 to 150 W. These $SnO_2$ thin films were annealed at $200^{\circ}C{\sim}700^{\circ}C$ temperature range of $100^{\circ}C$ interval in the $O_2$ gas condition. After annealing treatments, the microstructures of the $SnO_2$ thin films were changed mixed structure(amorphous & crystalline) to lamina columnar crystalline structure. Both the film thickness and the grain size were increased with increasing the local crystallization of $SnO_2$ microstructure of thin films by annealing treatment. Their electrical resistivity increased up to the annealing temperature of $400^{\circ}C$, and then slowly decreased.