• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.74.1-74.1
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• 2000

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.38-47
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• 1997

A new weighing sensor for the automatic diameter control system of the crystal growth is developed in this study. This weighing sensor measures the frequency of the vibrating element which is lineally changing with respect to weight. The signal and the power of this system are transmitted without any physical contact, so that this sensor offers high accuracy and resolution. This system consists of a string, a sinusoidal wave generator, an automatic amplification adjusting circuit, signal transformers and a PCB. 4 kinds of programs are developed for checking DAC, weight calibration and controlling growth process. The measurements of the standard deviation and the resolution show $\pm0.10g$(measured at every second) and $5{\times}10^{-5}$, respectively, This weighing sensor is effective under high pres-sure of 200 atm, high temperature and vacuum condition. The weighing system can control the temperature in the accuracy of $\pm0.025^{\circ}C$ with the 'signal divider'. The optical quality single crystals of $(YGd)_3Sc_2Ga_3O_{12},\;Er-Y_3Sc_2Al_3O_{12},\;and\;Bi_{12}GeO_{20}$ have been grown by Czo-chralski method using this auto-diameter control system.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.739-745
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• 2014

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensor utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator, which uses a 3-dB directional coupler at the output and has two complementary output waveguides. A dc switching voltage of ~25 V and an extinction ratio of ~12.5 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf input power, the minimum detectable electric fields are ~8.21, 7.24, and ~13.3 V/m, corresponding to dynamic ranges of ~10, ~12, and ~7 dB at frequencies of 10, 30, and 50 MHz respectively. The sensors exhibit almost linear response for an applied electric-field intensity from 0.29 V/m to 29.8 V/m.

• Journal of the Korean Ceramic Society
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• v.23 no.5
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• pp.1-8
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• 1986

This paper is concerned with a gas sensor composed of semi-conducting ${\gamma}$-$Fe_2O_3$ ceramics made by oxidizing $Fe_2O_3$ sintered body. Acicular $\alpha$-FeOOH powder prepared by precipitation of $FeSO_4$.$7H_2O$ solution was transformed to $FeSO_4$ sintered at 700$^{\circ}$-850$^{\circ}$C for 1 hr. and then oxidized to ${\gamma}$-$Fe_2O_3$ The gas sensitive properties of ${\gamma}$-$Fe_2O_3$ ceramic bodies based on the lectrical resistance change was measured in 0.5-2 vol% $H_2$ and $C_2$ $H_2$ gas at 35$0^{\circ}C$ The specific surface area of sintered specimen largely dependent on the sintering temperature and grain shape directly affected the gas sensitive pro-perties of ${\gamma}$-$Fe_2O_3$gas sensor. Specimens having larger specific surface area showed better sensitivity which means the electrical resistance change due to oxidation and reduction process occurs on ly at the surface of grains microscopically in the ${\gamma}$-$Fe_2O_3$ceramics. Micropores made in $Fe_2O_3$ powder during dehydration of $\alpha$-FeOOH can not prompt the gas sensitive properties of sintered ${\gamma}$-$Fe_2O_3$ because they are sintered or closed in the grains during sintering process and dose not affect the specific surface area of sintered body.

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.233-237
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• 2013

We fabricated electrolyte-insulator-semiconductor (EIS) devices using a solution process and measured the sensing properties of EIS devices according to the thicknesses of sensing membrane. For high pH sensitivity and better stability properties, we used $SiO_2/HfO_x$ (OH) layer as a sensing membrane. In this work, $HfO_x$ sensing membranes were deposited on 5 nm thick $SiO_2$ buffer layer by spin coater with thicknesses of 15, 31, 42, 55 nm, respectively. As a result, we founded that the thickness of $HfO_x$ sensing membrane affects to sensitivity and chemical stability of EIS device. Especially, the EIS device with 42 nm thick $HfO_x$ membrane showed superior sensing ability in terms of pH-sensitivity, linearity, hysteresis voltage and drift rate characteristics than the other devices. In conclusion, we confirmed that it is possible to improve the sensing ability and the chemical stability properties using optimized thickness of sensing membrane and proper annealing process.

• Electrical & Electronic Materials
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• v.5 no.4
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• pp.406-410
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• 1992

본 논문에서는 MgFe$_{2}$O$_{4}$ 세라믹스의 구조적 특성을 개선하기 위하여 TiO$_{2}$를 0-10[wt%] 첨가하여 세라믹스를 만들고 TiO$_{2}$가 습도센서용 MgFe$_{2}$O$_{4}$ 세라믹스의 구조적 특성에 미치는 영향을 조사하였다. 각 시편은 TiO$_{2}$가 첨가되는 양이 증대함에 따라 NgTi$_{2}$O$_{5}$의 이상이 나타났다. TiO$_{2}$의 첨가량이 6[wt%]일 때 까지는 시편의 밀도가 증가하여 기공율의 저하를 가져왔고 기공의 크기가 최소가 되는 조성은 5[wt%]의 TiO$_{2}$가 첨가되었을 때이며 이때의 평균 기공의 크기는 1615[.angs.]이었다. 따라서 5[wt%]의 TiO$_{2}$를 첨가했을 때가 기공의 크기 조절에 최적이라고 생각되며 센서용 기판으로 응용하기 적합하다고 생각된다.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3319-3321
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• 1999

Pt-RTD and Micro Heater was fabricated by using MgO as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures, In the analysis of properties of Pt-RTD, TCR value had 3927 $ppm/^{\circ}C$ and liner in the temperature range of $25-400^{\circ}C$. The temperature of Pt micro-heater had up to $400^{\circ}C$ with 1.5watts of the heating power. In investigating output characteristics of flow sensors output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000sccm, heating power of 1.2W.

• Journal of Sensor Science and Technology
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• v.21 no.3
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• pp.180-185
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• 2012

${\gamma}$-ray radiolysis was used to functionalize networked ZnO nanowires with Au nanoparticles. The networked ZnO nanowires were prepared through a vapor phase selective growth method. The sensing performances of the Au-functionalized ZnO nanowires were investigated in terms of $NO_2$, CO and benzene gases. The Au-funtionalized ZnO nanowire sensors showed an applicable, reliable capability to detect the gases, indicating their potential in chemical gas sensors.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.451-457
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• 2014

We developed a high-performance methane gas sensor based on a $SnO_2$ hollow hemisphere array structure of nano-thickness. The sensor structures were fabricated by sputter deposition of Sn metal over an array of polystyrene spheres distributed on a planar substrate, followed by an oxidation process to oxidize the Sn to $SnO_2$ while removing the polystyrene template cores. The surface morphology and structural properties were examined by scanning electron microscopy. An optimization of the structure for methane sensing was also carried out. The effects of oxidation temperature, film thickness, gold doping, and morphology were examined. An impressive response of ~220% was observed for a 200 ppm concentration of $CH_4$ gas at an operating temperature of $400^{\circ}C$ for a sample fabricated by 30 sec sputtering of Sn, and oxidation at $800^{\circ}C$ for 2 hr in air. This high response was enabled by the open structure of the hemisphere array thin films.

• Journal of Powder Materials
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• v.13 no.3 s.56
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• pp.192-198
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• 2006

The nanostructured cerium oxide powders were synthesized by spray thermal decomposition process for the use as the raw materials of resistive oxygen sensor. The synthesis routes consisted of 1) spray drying of water based organic solution made from cerium nitrate hydrate ($Ce(NO_3){_3}6H_2O$) and 2) heat treatment of spray dried precursor powders at $400^{\circ}C$ in air atmosphere to remove the volatile components and identically to oxidize the cerium component. The produced powders have shown the loose structure agglomerated with extremely fine cerium oxide particles with about 15 nm and very high specific surface area ($110m^2/g$). The oxygen sensitivity, n ($Log{\propto}Log (P_{O2}/P^o)^{-n}$ and the response time, $t_{90}$ measured at $600^{\circ}C$ in the sample sintered at $1000^{\circ}C$, were about 0.25 and 3 seconds, respectively, which had much higher performances than those known in micron or $100{\sim}200nm$ sized sensors.