• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.318-319
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• 2005

본 연구에서는 $LiCoO_2/LiNi_{1/3}Mn_{1/3}Co_{1/3}O_2$ 혼합 정극활물질로 사용하여 전극을 제작하고 성능을 평가하였다. $LiCoO_2/LiNi_{1/3}Mn_{1/3}Co_{1/3}O_2$와 $LiCoO_2$의 혼합비에 따른 충방전 거동 및 임피던스 변화를 측정하였다. 각 조성에서의 초기용량은 160 ~ 170 mAh/g 정도였으며, $LiNi_{1/3}Mn_{1/3}Co_{1/3}O_2$의 첨가 비율이 증가함에 따라 비용량이 증가하였으나 고율에서의 방전용량은 낮았다.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.335-340
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• 1988

The change in microstructure and the electrical properties of Pb(In1/2Nb1/2)O3-PbTiO3 Ceramics caused by V2O5 addition were studied. The results are ; 1. interability was increased because the mass transport through the second phase formed by V2O5 addition increased. 2. ith addition of V2O5, tetragonality and Curie temperature increased. The maximum value of kp was observed when 0.5wt% of V2O5 was added. 3. he second phase formed by V2O5 accelerated the grain growth, and existed in grain boundary. Electrical properties were changed by corelations between tetragonality and the amount of second phase.

• Korean Journal of Pharmacognosy
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• v.30 no.2
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• pp.168-172
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• 1999

Five compounds were isolated from the roots of Polygala tenuifolia (Polygalaceae). On the basis of spectroscopic evidences, the structures of these compounds were characterized as ${\alpha}-D-(6-O-sinapoyl)-glucopyranosyl(1{\rightarrow}2')-{\beta}-D-(3'-O-sinapoyl)-fructofuranoside$ (P3), ${\alpha}$-D-{6-O-(p-methoxybenzoyl)}-glucopyranosyl-$(1{\rightarrow}2')$-${\beta}$-D-{3'-O-(3',4',5'-trimethoxycinnamoyl)}-fructofuranoside(P4), ${\alpha}$-D-{6-O-(p-hydroxybenzoyl)}-glucopyranosyl-$(1{\rightarrow}2')$-${\beta}$-D-{3'-O-(3',4',5'-trimethoxycinnamoyl)}-fructofuranoside(P5), ${\alpha}-D-glucopyranosyl-(1{\rightarrow}2')-{\beta}-D-(1'-O-sinapoyl)-fructofuranoside$(P6), $1,5-anhydro-D-glucitol$(P7) respectively. ${\alpha}$-D-{6-O-(p-Methoxybenzoyl)}-glucopyranosyl-$(1{\rightarrow}2')$-${\beta}$-D-{3'-O-(3',4',5'-trimethoxycinnamoyl)}-fructofuranoside(P4) and ${\alpha}-D-glucopyranosyl-(1{\rightarrow}2')-{\beta}-D-(1'-O-sinapoyl)-fructofuranoside$(P6) were isolated for the first time from the genus of Polygala. 1,5-Anhydro-D-glucitol(P7) was isolated without hydrolysis for the first time from the root of Polygala tenuifolia.

• Journal of Korean Ophthalmic Optics Society
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• v.8 no.1
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• pp.7-10
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• 2003

Quarternary $SrO-B_2O_3-Al_2O_3-SiO_2$ glasses were fabricated as a function of $R({\equiv}SrO\;mole%/B_2O_3\;mole%)$ and $K({\equiv}(Al_2O_3+SiO_2)\;mole%/B_2O_3\;mole%)$. The structures of these glasses were investigated through Infrared absorption spectra. When R increased, the intensities of the absorption bands around $1,200{\sim}1,600cm^{-1}$ resulting from the B-O stretching vibration bond in the symmetrical trigonal $BO_3$ units decreased, and these of the absorption bands around $800{\sim}1,200cm^{-1}$ caused by the B-O stretching vibration bond of the tetrahedral $BO_4$ units varied. Also, the intensities of the absorption bands for the B-O stretching vibration band in trigonal $BO_3$ units increased and these of the bands for B-O stretching vibration bond in tetrahedral $BO_4$ units decreased as K increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.297-299
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• 1999

Effects of additives on the ceramic and electrical properties of Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$ceramics in a perovskite type structure were investigated. The dielectric and piezoelectric properties of the base composition were improved markedly through selection of Fe$_2$O$_3$ additives in proper amounts. The composition Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$ obtained the dielectric constant ($\varepsilon$$_{r}$=1,425). Also, electromechanical couping factors for planar(k$_{p}$) and piezoelectric constant(d$_{33}$) were obtained 0.50 and 294[pC/N] at the additives 0wt% Fe$_2$O$_3$ respectively. The mechanical quality facor(Q$_{m}$) of Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$+Fe$_2$O$_3$(0.3 wt%) is about 510.510.510.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.1
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• pp.5-14
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• 1977

"Electrical Properties of Barium Titanates with Addition Sb2O3." PTC BaTiO3 in low resistance at room temperature was prepatred. Al2O3, SiO2 and TiO2 were doped with a view to improving reproduction. Sb2O3 was doped as impurity in order to control of resistivity of the specimens. The relations between the amount of Sb3O3 and electrical properties wereinvestigated. Of the compositions studied, additions of 3.75mole% Al2O3, 1.25mole% SiO2, 2.25mole% TiO2 and 0.16~0.25wt% Sb2O3 to BaTiC3 was low resistivity in 14-300 ohm-cm.00 ohm-cm.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.197-202
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• 2001

M $g_{1-x}$ Z $n_{x}$O thin films with various composition x of ZnO were fabricated by a RF magnetron sputtering method, which is expected to improve the electro-optical properties of the conventional MgO protective layer for AC-PDP. Test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer have been fabricated in order to investigate the effects of ZnO doping on the electrical characteristics of devices such as the discharge voltages and the memory gain. Experimental results revealed that test panels with the $Mg_{1-x}$Z $n_{x}$O(x=0.5at%) protective layer show lower firing and sustain voltages than those seen in panels with MgO protective layer by 20V. resulting in an increasement of the memory coefficient. In addition, it was found that test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer show higher discharge intensity, i. e., higher plasma density, compared with panels with MgO protective layer.ve layer.layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.96-96
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• 2007

Low voltage organic TFTs (OTFTs) and ZnO based TFTs (<5V), utilizing room temperature deposited $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin films were recently reported, pointing to high-k gate insulators as a promising route for realizing low voltage operating flexible electronics. $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin film is one of the most promising materials for gate insulator because of its large dielectric constant (~60) at room temperature. However their tendency to suffer from relatively high leakage current at low electric field (>0.3MV/cm) hinder the application of BZN thin films for gate insulator. In order to improve leakage current characteristics of BZN thin film, we mixed 30mol% MgO with 70mol% BZN and their dielectric and electric properties were characterized. We fabricated field-effect transistors with transparent oxide semiconductor ZnO serving as the electron channel and high-k $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ as the gate insulator. The devices exhibited low operation voltages (<4V) due to high capacitance of the $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ dielectric.

• BMB Reports
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• v.41 no.10
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• pp.728-732
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• 2008

FoxO3a is a member of the forkhead box class O (FoxO) transcription factor family and an important regulator of apoptosis. This work aimed to elucidate the involvement of FoxO3a in transforming growth factor-${\beta}1$(TGF-${\beta}1$)-induced apoptosis in FaO rat hepatoma cells. TGF-${\beta}1$ caused a time-dependent activation of FoxO3a and a subsequent increase in FoxO response-element-containing luciferase reporter activity, which was Akt-sensitive. The FaO cells stably transfected with a wild type FoxO3a were more susceptible to the formation of apoptotic bodies, populations of sub-G1 apoptotic cells, and collapse of the mitochondrial-membrane potential triggered by TGF-${\beta}1$. In contrast, transfection with small-interfering RNA (siRNA) oligonucleotide specific for FoxO3a significantly inhibited caspase activation in FaO cells treated with TGF-${\beta}1$. It thus appears that FoxO3a plays a crucial mediatory role in the TGF-${\beta}1$ signaling pathway leading to apoptosis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.152-164
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• 1995

$xPb(Fe_{1/2}Nb_{1/2})O_3 - (1 - x)Pb(Mg_{1/3}Nb_{2/3})O_3$ powders were synthesized by the molten salt synthesis method using the NaC!- KCI flux with 1 : 1 molar ratio, and their powders and dielectric properties were investigated. The synthesized powders showed less agglomerated shape with the average particle size of less than $2 \mu\textrm{m}$. The composition $x0.3Pb(Fe_{1/2}Nb_{1/2})O_3-0.7Pb(Mg_{1/3}Nb_{2/3})O_3$ could be sintered at $1000{\times}C$ and its dielectric constnat was over 11, 000.