• 한국전기화학회:학술대회논문집
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• 2002.07a
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• pp.251-258
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• 2002

[ $Ni-10wt.\%Cr$ ] green sheet를 불활성분위기로 $900^{\circ}C$까지 승온시킨 다음 부분산화$(P_{H2}/P_{H2O}=10^{-2})$후 $1100^{\circ}C$에서 3시간 환원처리를 시키는 소결공정으로 Ni-Cr 고용체 기지 주변에 작은 $Cr_2O_3$ 알갱이가 고르게 분포하는 anode(Anode Sintered in Partial oxidation - Reduction atmosphere; ASPR)를 제조하였으며, creep 변형률이 $2.8\%$로서 미세구조에 따른 creep 특성의 비교를 위해 기존의 환원분위기에서만 소결시킨 anode(Anode Sintered in Reduction atmosphere only; ASR)의 $11\%$보다 우수한 creep 저항성을 나타내었다. $Cr_2O_3$ 알갱이가 분산된 미세구조른 부분산화 시 Cr과 Ni의 산화속도 및 확산속도의 차이로 인해 형성되는 것으로 사료되며, creep 전${\cdot}$후 ASPR 시편의 SEM 및 기공률 분석결과 매우 안정적으로 그 형상 및 구조를 유지하고 있음을 확인할 수 있었다. 또한 ASPR 시편의 전기전도도는 약 $15\times10^6\;S/m$로서 기존 ASR 시편의 전기전도도와 유사함을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.317-321
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• 2002

Piezoelectric properties of $(Pb_{1-x}Y_x)[(Ni_{1/3}Nb_{2/3})_{0.15}(Zr_{1/2}Ti_{1/2)})_{0.85}]O_{3}$ (x=0~0.05) ceramics were investigated, The stoichiometric PNN-PZT ceramics required the sintering temperature above $1100^{\circ}C$, but the addition of $Y_{2}O_{3}$ in the PNN-PZT ceramic lowered the sintering temperature down to $1000^{\circ}C$. In case of x=0.005, the electro-mechanical coupling $factor(K_p)$, the piezoelectric $constant(d_{33})$, and the maximum strain ratio of PNN-PZT ceramics sintered at $1000^{\circ}C$ were 53.1%, 395pC/N, and $2200{\times}10^{-6}$ respectively, A 30-layer piezoelectric actuator$(10{\times}10{\times}1.7mm)$ fabricated with the above material showed the maximum strain of $2.09{\mu}m$ under 100V DC bias.

• Journal of Magnetics
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• v.18 no.4
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• pp.428-431
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• 2013

We demonstrate that a partial loading of $Ni_{0.5}Zn_{0.5}Fe_2O_4$ (Ni-Zn ferrite) film remarkably improves impedance matching of electrically small $Ba_3Co_2Fe_{24}O_{41}$ ($Co_2Z$) hexaferrite antenna. A 3 ${\mu}m$ thick Ni-Zn ferrite film was deposited on a silicon wafer by the electrophoresis deposition process and post-annealed at $400^{\circ}C$. The fabricated Ni-Zn ferrite film has saturation magnetization of $268emu/cm^3$ and coercivity of 89 Oe. A partial loading of the Ni-Zn ferrite film on the $Co_2Z$ hexaferrite helical antenna increases antenna return loss to 24.7 dB from 9.0 dB of the $Co_2Z$ antenna. Experimental results show that impedance matching and maximum input power transmission to the antenna without additional matching elements can be realized, while keeping almost the same size as the $Co_2Z$ antenna size.

• Resources Recycling
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• v.31 no.4
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• pp.26-33
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• 2022

Owing to the demand for lithium-ion batteries, the recovery of valuable metals from waste lithium-ion batteries is required in future. A pyrometallurgical treatment is appropriate for recycling a large number of waste lithium-ion batteries, but Li loss to slag and dust present a significant challenge. This research investigated carbonation roasting and water leaching behaviors in Li-ion batteries by graphite addition to recover Li from the NCM-based cathode materials of waste Li-ion batteries. When 10 wt% of graphite was added, CO and CO₂ gases were emitted with a rapid weight reduction at apporoximately 850 K, when heated in Ar and CO₂ atmosphere. After the rapid weight reduction, NCM was decomposed and reduced to metal oxides and pure metals. In the carbonation roasting of black powder (NCM+graphite), O₂ is generated via the decomposition of NCM, and an oxides, such as Li₂O and NiO were were also generated. Subsequently, Li₂O reacts with CO₂ to generate Li₂CO₃, and a part of NiO was reduced by graphite to produce metal Ni. In addition, up to 94.5 % Li₂CO₃ with ~99.95 % purity was recovered via water leaching after carbonation roasting.

• Journal of Hydrogen and New Energy
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• v.21 no.4
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• pp.271-277
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• 2010

$(Ba(Zr_{0.85}Y_{0.15})O_{3-\delta})$ oxide, showing high protonic conductivity at high temperatures and good chemical stability with $CO_2$ are referred to as hydrogen separation membrane. For high efficiency of hydrogen separation ($H_2$ flux and selectivity) and low fabrication cost, ultimate thin and dense BZY-Ni layer has to be coated on a porous substrate such as $ZrO_2$. Aerosol depostion (AD) process is a novel technique to grow ceramic film with high density and nano-crystal structure at room-temperature, and may be applicable to the fabrication process of AD integration ceramic layer effectively. XRD, SEM, X-ray mapping measurements were conducted in order to analyze the characteristics of BZY-Ni membrane fabricated by AD process. it is observed that it is homogeneous distribution for BZY-Ni. The result of $H_2$ permeation rate suggests that BZY-Ni composite is higher than BZY.

• Journal of the Korean Chemical Society
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• v.22 no.5
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• pp.295-303
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• 1978

The dipole moments for octahedral [Co(III)-$O_3N_3$], tetrahedral [M(II)-$O_2N_2$] and square planar [M(II)-$O_2N_2$] types complexes are calculated by the expansion method for spherical harmonics using the valence basis sets for the central metal ion and the single basis set orbital ($2p_z$) for ligands. The calculated dipole moments for these complexes are in agreement with the experimental values.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.340-340
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• 2002

In an effort to develop alternative single buffer layer technology for YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) coated conductors, we have investigated both LaMnO$_3$, (LMO) and La$_2$Zr$_2$O$_{7}$ (LZO) as potential buffer layers. High-quality LMO films were grown directly on textured Ni and Ni-W (3%) substrates using rf magnetron sputtering. Highly textured LZO buffers were grown on textured Ni substrates using sol-gel alkoxide processing route. YBCO films were then grown on both LMO and LZO buffers using pulsed laser deposition. Detailed X-ray studies have shown that YBCO films were grown on both LMO and LZO layers with a single epitaxial orientation. A high J$_{c}$ of over 1 MA/cm$^2$ at 77 K and self-field was obtained on YBCO films grown on both LMO-buffered Ni or Ni-W substrates, and also on LZO-buffered Ni substrates. We have identified LaMnO$_3$ as a good diffusion barrier layer for Ni and it also provides a good template for growing high current density YBCO films. Similarly we have also demonstrated the growth of high J$_{c}$ YBCO films on all solution buffers. We will discuss in detail about our buffer deposition processes. processes.s.s.s.s.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.129-132
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• 2003

Yttria stabilized zirconia (YSZ) buffer layers were deposited by a metal organic chemical vapor deposition (MOCVD) technique using single liquid source for the application of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) coated conductor. Y:Zr mole ratio was 0.2:0.8, and tetrahydrofuran (THF) was used as a solvent. The (100) single crystal MgO substrate was used for searching deposition condition. Bi-axially oriented CeO$_2$ and NiO films were fabricated on {100}〈001〉 Ni substrate by the same method and used as templates. At a constant working pressure of 10 Torr, the deposition temperatures (660~80$0^{\circ}C$) and oxygen flow rates (100~500 sccm) were changed to find the optimum deposition condition. The best (100) oriented YSZ film on MgO was obtained at 74$0^{\circ}C$ and $O_2$ flow rate of 300 sccm. For YSZ buffer layer with this deposition condition on CeO$_2$/Ni template, full width half maximum (FWHM) values of the in-plane and out-of-plane alignments were 10.6$^{\circ}$ and 9.8$^{\circ}$, respectively. The SEM image of YSZ film on CeO$_2$/Ni showed surface morphologies without microcrack.k.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.676-680
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• 2003

In this study, to develop the low temperature sintering ceramics for piezoelectric transformer, PSN-PNN-PZT system ceramics were manufactured as a function of V$_2$O$_{5}$ addition, that is the low melting point oxide. Its dielectric and piezoelectric characteristics were investigated. With increasing the amount of V$_2$O$_{5}$ addition, electromechanical coupling factor(kp) and mechanical quality factor(Qm) were decreased. For piezoelectric transformer application, the 0.1wt% V$_2$O$_{5}$ added specimen sintered at 1,00$0^{\circ}C$ showed the proper value of $\varepsilon$r=1,590, kp=0.51 and Qm=748.m=748.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2265-2269
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• 2011

1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.