• Nanomaterials
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• v.12 no.5
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• pp.827-838
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• 2022

Controlling the Schottky barrier height (φ_B) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga₂O₃ semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (φ_B), from 1.32 to 0.43 eV, and in the series resistance (R_s), from 60.3 to 2.90 mΩ.cm². However, the saturation current (J_s) increased from 1.26×10^-11 to 8.3×10^-7(A/cm²). The effects of a graphene bandgap and workfunction were studied. With an increase in the graphene workfunction and bandgap, the Schottky barrier height and series resistance increased and the saturation current decreased. This behavior was related to the tunneling rate variations in the graphene layer. Therefore, control of Schottky barrier diode output parameters was achieved by monitoring the tunneling rate in the graphene layer (through the control of the bandgap) and by controlling the Schottky barrier height according to the Schottky-Mott role (through the control of the workfunction). Furthermore, a zero-bandgap and low-workfunction graphene layer behaves as an ohmic contact, which is in agreement with published results.

• Journal of Hydrogen and New Energy
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• v.28 no.1
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• pp.40-46
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• 2017

We reviewed the electrical properties of SOFC anode manufactured using spherical Ni and nano YSZ powder. When core-shell is fabricated by using submicron Ni as core and nano-sized YSZ as shell for SOFC anode, the electrical conductivity of the $0.2{\mu}m$ Ni-YSZ core-shell was 3 times higher than that of $1.0{\mu}m$ NiO or $1.0{\mu}m$ Ni-YSZ. Hydrogen selectivity was similar at $800^{\circ}C$, but hydrogen selectivity and methane conversion rate under $750^{\circ}C$ was 10~25% higher, Power density was more than 2 times, ASR was about 1/3, when exposed to $H_2$ atmosphere at $750^{\circ}C$ for a long time, Ni particles did not have any growth or cut off conduction path.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.959-962
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• 2000

We have fabricated good quality superconducting YBa$_2$Cu$_3$$O_{7-x}$(YBCO) thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrates with CeO$_2$and BaTiO$_3$buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. YBCO film with CeO$_2$single buffer layer shows T$_{c}$ of 71.64 K and the grain size less than 0.1${\mu}{\textrm}{m}$. When BaTiO$_3$ is used as a single buffer layer, the grain size of YBCO is observed to be larger than that of YBCO/CeO$_2$by 200 times and the transition temperature of the film is enhanced to be about 84 K. CeO$_2$/BaTiO$_3$double buffer layer has been adopted to enhance the superconducting properties, which results in the enhancement of the critical temperature and the critical current density to be about 85 K and 8.4$\times$10$^4$ A/$\textrm{cm}^2$ at 77 K, respectively mainly due to the enlargement of the grain size of YBCO film.ilm.

• Environmental Engineering Research
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• v.20 no.4
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• pp.329-335
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• 2015

The effects of ion-doping on $TiO_2$ nanotubes were investigated to obtain the optimal catalyst for the effective decomposition of Rhodamine B (RB) through UV photocatalytic oxidation process. Changing the calcination temperature, which changed the weight fractions of the anatase phase, the average crystallite sizes, the BET surface area, and the energy band gap of the catalyst, affected the photocatalytic activity of the catalyst. The ionic radius, valence state, and configuration of the dopant also affected the photocatalytic activity. The photocatalytic activities of the catalysts on RB removal increased when $Ag^+$, $Al^{3+}$ and $Zn^{2+}$ were doped into the $TiO_2$ nanotubes, whereas such activities decreased as a result of $Mn^{2+}$ or $Ni^{2+}$ doping. In the presence of $Zn^{2+}$-doped $TiO_2$ nanotubes calcined at $550^{\circ}C$, the removal efficiency of RB within 50 min was 98.7%.

• Journal of Electrical Engineering and Technology
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• v.2 no.4
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• Progress in Superconductivity and Cryogenics
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• v.8 no.1
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• pp.19-22
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• 2006

Desirable substrates for $YBa_2Cu_3O_{7-\delta}$ coated conductor are highly cube textured Ni or Ni-alloy tapes, which can be produced by cold rolling and recrystallization annealing. We have fabricated hi-axially textured pure Ni tapes for the application of coated conductors. The sintered Ni rod was cold-rolled into the thin tapes of $50{\mu}m$ thickness and the tapes were heat-treated for texture development with line-focused infrared heater. The temperature was maintained at $800\sim1050^{\circ}C$, using 1kW double ended linear halogen lamp in $96%Ar-4%H_2$ atmosphere The biaxially tortured Ni tapes were successfully formed by line-focused infrared heat treatment The texture of the annealed Ni tapes was analysed using the GADDS (general area detector diffraction system). The full width at half maximum values of phi and omega scan for the Ni tapes were less than $10^{\circ}$ and the grain size was $20-50{\mu}m$.

• Transactions on Electrical and Electronic Materials
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• v.18 no.5
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• pp.261-264
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• 2017

$Ni_{0.79}Co_{0.15-x}Cu_xMn_{2.06}O_4$ ($0{\leq}x{\leq}0.09$) thick films were fabricated using the conventional solid-state reaction method and screen-printing method. Structural and electrical properties of specimens based on the amount of Cu were observed in order to investigate their applicability in the infrared detector. All specimens showed a single spinel phase with a homogeneous cubic structure. As the amount of Cu increased, the average grain size increased and was found to be approximately $5.01{\mu}m$ for the $Ni_{0.79}Co_{0.06}Cu_{0.09}Mn_{2.06}O_4$ specimen. The thickness of all specimens was approximately $55{\sim}56{\mu}m$. As Cu content increased, the resistivity and TCR properties at room temperature decreased, and these values for the $Ni_{0.79}Co_{0.06}Cu_{0.09}Mn_{2.06}O_4$ specimen were $502{\Omega}-cm$ and $-3.32%/^{\circ}C$, respectively. The responsivity and noise properties decreased with an increase in Cu content, with the specimen with a Cu content of x=0.09 showing 0.0183 V/W and $5.21{\times}10^{-5}V$, respectively.

• Journal of Surface Science and Engineering
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• v.48 no.3
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• pp.121-125
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• 2015

We studied the blue fluorescent OLED with Mg:Ag, Al, Ni as anode materials. Blue fluorescent OLEDs were fabricated using Anode / $MoO_3$ (3 nm) / 2-TNATA (60 nm) / NPB (30 nm) / SH-1 : BD-2 (5 vol.%, 30 nm) / Bphen (40 nm) / Liq (1 nm) / Al (150 nm). Current density of OLED with Mg:Ag was not measured due to too low work function, and that of OLED with Al showed $45.2mA/cm^2$ at 12 V. Luminance and Current efficiency of OLED with Al showed $385.1cd/m^2$ and 0.9 cd/A. Current density of OLED with Ni of 8, 10, 12 nm thickness showed 10, 12.9, $37.2mA/cm^2$, respectively. Luminance and Current efficiency of OLED with Ni of 8, 10, 12 nm thickness showed 670.9, 991.2, $1,320cd/m^2$ and 6.7, 7.7, 3.6 cd/A, respectively. Transmittance of Al was 52.2% at 476 nm wavelength and that of Ni of 8, 10, 12 nm thickness was 79, 77, 74 %, respectively. In spite of best current density, OLED with Al showed the lowest luminance and current efficiency because of low work function and poor transmittance. When thickness of Ni was increased to 12nm, current efficiency was sharply lower owing to bad transmittance and unbalance of holes and electrons. Finally, OLED with Ni of 10 nm thicknes showed the highest current efficiency.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.715-720
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• 2000

By the mechanical alloying method. Ni-WC composite materials were prepared to improve the deformation-resistance for creep and sintering of Ni-anode at the operating temperature of $650^{\circ}C$. Mechanically alloyed powder w was initially fabricated by ball milling for 80hr, and then amorphization was occurred by the destruction of ordered crystals based on XRD analysis. In order to investigate the electrochemical performance and sheet characteristics of Ni-WC anode, tape casting process was adopted. Finally, the obtained sheet thickness of Ni- we after sintering at $1180^{\circ}C$ for 60 minutes in $H_2$ atmosphere was O.9mm and the average pore size was $3~5{\mu\textrm{m}}$ with porosities of 55%. The second phase was not observed in Ni- W matrix while W particles were finely and uniformly distributed in Ni matrix. This fine and uniform distributed W particles in Ni matrix are expected to enhance the mechanical properties of Ni anode through the dispersion and solid solution hardening mechanisms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.809-812
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• 2001

We were fabricated of NiCr thin film resistors on A1$_2$O$_3$and SiO$_2$/Si substrates by dc magnetron sputtering system. The AC characteristics of resistors were studied. The cut-off frequency were found >10 MHz for the resistors with 39 ohm value of Alumina substrates, but the cut-off frequency were found 400 kHz for the resistors with 168 ohm value of SiO$_2$/Si substrates. In high frequency applications, the substrate selection is the most important factor.