• Title/Summary/Keyword: $Nb_2_O3$

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Preparation of $Pb(Sc_{1/2}Nb_{1/2})O_3$ Powders by the molten salt synthesis method (솔-젤법에 의한 $Pb(Sc_{1/2}Nb_{1/2})O_3$ 분말의 제조)

  • ;;D. A. Payne
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.4
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    • pp.555-559
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    • 1997
  • Lead scandium niobate $Pb(Sc_{1/2}Nb_{1/2})O_3$ powders were prepared by the sol-gel method using lead acetate, scandium acetate, and niobium isopropoxide as precursors. Crystallization behavior and phase formation were investigated for gel-derived powders. After the calcination at $700^{\circ}C$ for 1 hr, $Pb(Sc_{1/2}Nb_{1/2})O_3$ powder with the purity of 97% was formed and the average particle size of powder was below 0.2 $\mu \textrm{m}$.

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B-site Cationic Ordering Structures of Donor-Doped Relaxor Ferroelectric $Pb({Mg_{1/3}}{Nb_{2/3})}O_3$ (전자 주게가 첨가된 완화형 강유전체 $Pb({Mg_{1/3}}{Nb_{2/3})}O_2$의 B자리 양이온 질서배열구조)

  • Cha, Seok-Bae;Kim, Byeong-Guk;Je, Hae-Jun
    • Korean Journal of Materials Research
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    • v.10 no.7
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    • pp.478-481
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    • 2000
  • Single phase $Pb(Mg_{1/3}Nb_{2/3})O_3$ ceramics doped by 10 mol% of electron donors such as $La^3,\; Pr^{3+,4+},\; Nd^{3+},\; Sm^{3+}$, were synthesized and their B-site cationic ordering structures were investigated by XRD and TEM. In the XRD patterns, only fundamental reflections were observed for the undoped $Pb(Mg_{1/3}Nb_{2/3})O_3$, while the (h/2 $\textsc{k}$/2ι/2)(h,$\textsc{k}$,ι all odd) superlattice reflections resulting from the 1:1 ordering induced unit cell doubling were also observed for the donor-doped $Pb(Mg_{1/3}Nb_{2/3})O_3$. In the TEM selected area diffraction patterns, the (h/2 k/2 l/2)(h,k,l all odd) superlattice reflection spots as well as the fundamental reflection spots were observed for all the samples, but the relative intensities of the superlattice reflection spots to the fundamental reflection spots were significantly enhanced by the donor-doping. In the TEM dark-field images, antiphase boundaries were observed only for the donor-doped $Pb(Mg_{1/3}Nb_{2/3})O_3$. It was therefore experimentally verified that doping by electron donors such as $La^3,\; Pr^{3+,4+},\; Nd^{3+},\; Sm^{3+}$, enhances the B-site cationic 1:1 ordering in $Pb(Mg_{1/3}Nb_{2/3})O_3$. These experimental results were interpreted in terms of the charge compensation mechanism.

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Microwave Dielectric Properties of (Sr$_{1-x}$Bax)(Mg$_{1/3}$Nb$_{2/3}$)O$_3$ with SrWO$_4$ addition (SrWO$_4$가 첨가된 (Sr$_{1-x}$Bax)(Mg$_{1/3}$Nb$_{2/3}$)O$_3$의 마이크로파 유전특성)

  • Heo, Hoon;Park, Chan-Sik;Kim, Kyoung-Young;Byun, Jae-Dong
    • Journal of the Korean Ceramic Society
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    • v.36 no.3
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    • pp.325-331
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    • 1999
  • SrWO4가 첨가된 (Sr1-xBax)(Mg1/3Nb2/3)O3의 마이크로파 유전특성에 관하여 조사하였다. 관찰된 조성영역에서 Sr(Mg1/3Nb2/3)O3과 Ba(Mg1/3Nb2/3)O3은 (Sr1-xBax)(Mg1/3Nb2/3)O3고용체를 형성하고 SrWO4의 첨가는 고용체의 소결성을 향상시켜 소결온도 155$0^{\circ}C$에서 상대밀도 97% 이상을 얻었다. 소결한 시편의 EDS분석결과, SrWO4의 첨가량이 많은 시편에서 2차상이 존재하는 것을 알수 있었다. 순수한 Sr(Mg1/3Nb2/3)O3에 SrWO4를 0.01 mole첨가하여 1550~1$600^{\circ}C$에서 소결한 시편의 유전특성은 $\varepsilon$r 30, Q$\times$fo$\geq$55000,$ au$f -23 ppm/$^{\circ}C$이었다. 0.01 mole SrWO4가 첨가된 (Sr1-xBax)(Mg1/3Nb2/3)O3 고용체의 유전율과 온도계숙가 x에 따라 점차적으로 계속 증가하였고 Q$\times$fo는 x$\leq$0.25에서 x에 따라 감소하고 x$\geq$0.3에서 다시 증가하였다. (Sr0.65Ba0.35)(Mg1/3Nb2/3)O3+0.01SrWO4의 조성을 갖는 시편에서 $\varepsilon$r 34.4, Q$\times$fo$\geq$55000,$\tau$f 0 ppm/$^{\circ}C$이었다.

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Microstructures and Optical Properties of Composite Crystals in the System (Bi2O3)0.85.(Nb2O5)0.15-6Bi2O3.SiO2 ((Bi2O3)0.85.(Nb2O5)0.15-6Bi2O3.SiO2계 복합다결정체의 미세구조와 광학적 특성)

  • 김호건
    • Journal of the Korean Ceramic Society
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    • v.26 no.1
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    • pp.139-145
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    • 1989
  • An eutectic melt in the system(Bi2O3)0.85·(Nb2O5)0.15-6Bi2O3·SiO2 was unidirectionally solidfield at a rate of 0.5mm/h under a thermal gradient of 100℃/cm. Double crucibles and seed crystal plate were used in order to botain the composite crystals which had uniform microstructure throughout the ingot. The obtained composite crystals showed uniform microstructure, in which needle-like δ-(Bi2O3)0.85·(Nb2O5)0.15 crystals were arrayed in parallel in a matrix of γ-6Bi2O3·SiO2 single crystal. It was found that the <110> direction of δ-(Bi2O3)0.85·(Nb2O5)0.15 crystal was essentially parallel to the <111> direction of γ-6Bi2O3·SiO2 crystal in the composite crystals. A transverse thin plate of the composite crystals showed a high resolution optical transmission like an optical fiber array, and sharp chatoyancy was observed in the cabochon shaped composite crystals. Then, this may be useful for applications such as screen of a cathode ray tube or artificial cat's eye gem stones.

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Electrical and Structural Properties of $LiNbO_3/Si$ Structure by RF Sputtering Method (RF 스퍼터링법을 이용한 $LiNbO_3/Si$구조의 전기적 및 구조적 특성)

  • Lee, Sang-Woo;Kim, Kwang-Ho;Lee, Won-Jong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.2
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    • pp.106-110
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    • 1998
  • The $LiNbO_3$ thin films were prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. RTA(Rapid Thermal Annealing) treatment was performed for as-deposited films in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric $LiNbO_3$ film was increased from a typical value of $1{\sim}2{\times}10^8{\Omega}{\cdot}cm$ before the annealing to about $1{\times}10^{13}{\Omega}{\cdot}cm$ at 500 kV/cm and reduced the interface state density of the $LiNbO_3/Si$ (100) interface to about $1{\times}10^{11}/cm^2{\cdot}eV$. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization ($P_r$) and coercive field ($E_c$) values of about 1.2 ${\mu}C/cm^2$ and 120 kV/cm, respectively.

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An Investigation on the Dielectric and Microwave Properties of Ag(Ta,Nb)O3 Thick Films on the Alumina Substrates (알루미나 기판에 스크린 프린팅된 Ag(Ta,Nb)O3 후막의 유전특성 및 초고주파 특성에 대한 연구)

  • Lee, Ku-Tak;Koh, Jung-Hyuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.11
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    • pp.925-928
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    • 2011
  • Perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. This article was investigated ferroelectric materials $Ag(Ta,Nb)O_3$ thick film. In this study, we have fabricated the $Ag(Ta,Nb)O_3$ thick film on the $Al_2O_3$ substrates by screen printing method. The $Ag(Ta,Nb)O_3$ thick film were fabricated by the mixed oxide method. The sintering temperature and time were 1,150$^{\circ}C$, 2 hr. The electrical properties of $Ag(Ta,Nb)O_3$ thick film were investigated at 30~100$^{\circ}C$.

Dielectric and Piezoelectric Properties of (Na,K)(Nb,Ta,Sb)O3 Ceramics doped with Nb2O5 (Nb2O5 첨가에 따른 (Na,K)(Nb,Ta,Sb)O3 세라믹스의 유전 및 압전 특성)

  • Byeon, Sun-Min;Yoo, Ju-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.11
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    • pp.867-872
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    • 2012
  • In this study, in order to develop excellent lead free piezoelectric ceramics for piezoelectric actuators application, $Li_{0.04}(Na_{0.50}K_{0.50})_{0.96}[(Nb_{0.86}Ta_{0.10}Sb_{0.04})_{0.994}Co_{0.015}]O_3+0.0025SrO+0.15\;wt%K_2CO_3+x\;wt%Nb_2O_5$ (x = 0 - 0.5 wt%) (abbreviated as LNKNTSCS-xN) ceramics were fabricated by a conventional sintering technique. the phase structure, microstructure and electrical properties were investigated with a emphasis on the influence of the $Nb_2O_5$ content. High electrical properties of $d_{33}$=234 pC/N, kp=0.392, ${\varepsilon}_r$=1,395, ${\rho}=4.70g/cm^3$ were obtained from the specimen with x=0.4 wt%, which suggests that the composition ceramics is a promising lead-free piezoelectric material.

The Microwave Dielectric Properties of Low-Temperature Sintered $ZnNb_2O_6$ Ceramics with Addition (첨가물에 따른 저온소결형 $ZnNb_2O_6$ 세라믹스의 마이크로파 유전특성)

  • Kim, Jung-Hun;Kim, Jae-Sik;Kim, Ji-Heon;Lee, Moon-Kee;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.196-197
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    • 2005
  • The $ZnNb_2O_6$ ceramics with 3wt% CuO and $B_2O_2$(1,3,5wt%) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1000^{\circ}C\sim1050^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_8$) was increased. But no significant difference was observed as sintering temperature. In the $ZnNb_2O_6$ ceramics with 3wt% CuO and 5wt% $B_2O_3$ sintered at $1025^{\circ}C$ for 3hr, the dielectric constant, quality factor, temperature coefficient of the resonant frequency were 22.92, 20,271GHz, -14.27ppm/$^{\circ}C$, respectively.

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Dielectric Properties of Ca0.8Sr1.2Nb3O10 Nanosheet Thin Film Deposited by the Electrophoretic Deposition Method

  • Yim, Haena;Yoo, So-Yeon;Choi, Ji-Won
    • Journal of Sensor Science and Technology
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    • v.27 no.1
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    • pp.1-5
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    • 2018
  • Two-dimensional (2D) niobate-based nanosheets have attracted attention as high-k dielectric materials. We synthesized strontiumsubstituted calcium niobate ($Ca_{0.8}Sr_{1.2}Nb_3O_{10}$) nanosheets by a two-step cation exchange process from $KCa_{0.8}Sr_{1.2}Nb_3O_{10}$ ceramic. The $K^+$ ions were exchanged with $H^+$ ions, and then H+ ions were exchanged with tetrabutylammonium ($TBA^+$) cations. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ nanosheets were then exfoliated, decreasing the electrostatic interaction between each niobate layer. Furthermore, $Ca_2Nb_3O_{10}$ nanosheets were synthesized in same process for comparison. Each exfoliated nanosheet shows a single-crystal phase and has a lateral size of over 100 nm. The nanosheets were deposited on a $Pt/Ti/SiO_2/Si$ substrate by the electrophoretic deposition (EPD) method at 40 V, followed by ultraviolet irradiation of the films in order to remove the remaining $TBA^+$ ions. The $Ca_{0.8}Sr_{1.2}Nb_3O_{10}$ thin film exhibited twice the dielectric permittivity (~60) and lower dielectric loss than $Ca_2Nb_3O_{10}$ thin films.