• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.609-612
• /
• 2002

In this study, the electrical properties were investigated for the deposited Ba,Sr)(Nb,Ti)$O_3$[BSNT] thin films grown on $Pt/TiO_2/SiO_2/Si$ substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the $Ar/O_2$ rates were investigated. In the case of the BSNT thin films deposited with condition of 60/40$(Ar/O_2)$ ratio, the $BaTiO_3$, $SrTiO_3$ and $BaNbO_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20$(Ar/O_2)$ ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1989.06a
• /
• pp.70-73
• /
• 1989

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})O_3-Ba(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3(0.12{\leq}x{\leq}0.21, 0.24{\leq}y{\leq}0.33$) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1050 [$^{\circ}C$], 2[hr]. Morphotropic phase boundary region was chosen for the composition. 0.55 PZN-0.21 BZN-0.24 PT specimen had the highest value of relative dielectric constants, 5353. The curie temperature of specimens were increased linearly with PT content. Near the morphotropic phase boundary, electro-mechanical coupoling factor and mechanical quality factor of the specimens had the highest values.

• Journal of the Korean Ceramic Society
• /
• v.33 no.1
• /
• pp.17-24
• /
• 1996

Pb(Mg1/3Nb2/3)O3 powder with high purity chemical homogeniety and reactivity was prepared by solvent eva-poration of common solution. The common solution was fabricated using a Pb(NO3)2 Mg(NO)3 and NB solution which was prepared by dissolving NbC in H2O2 acquous solution. In precusor powder prepared by solvent evaporation method the synthetic temperature of Pb(Mg1/3 Nb2/3)O3 phase was lowered. And the formation of homogeneous Pb(Mg1/3Nb2/3)O3 phase was enhanced but the formation of pyrochlore phase was reduced. The dielectric constant of PMN ceramics from the synthesized powder was found to increase with both sintering temperature and excess MgO and subsequent analysis of the microstructures confirmed that this was due to an increase in grain size. The grain size dependence is explained as a consequence of low-permittivity grain boundaries.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.4
• /
• pp.317-321
• /
• 2003

In this study, the structural properties were Investigated for the deposited (Ba,Sr)(Nb,Ti)O$_3$[BSNT] thin films grown on Pt/TiO$_2$/SiO$_2$/Si substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the Ar/02 ratios were Investigated. In the case of the BSNT thin films deposited with condition of 60/40(Ar/O$_2$) ratio, the BaTiO$_3$, SrTiO$_3$ and BaNbO$_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20(Ar/O$_2$) ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.5
• /
• pp.447-453
• /
• 1999

Congruent $LiNbO_3$ crystals with doped Mg and codoped with Mn or Fe were grown by the Czochralski method. It is known that the physical properties of $LiNbO_3$ depend strongly on the addition of Mg and transition metals. This is established by studying the following properties; XRD patterns, the phase transition temperature, energy of the fundamental absorption edge, the shape of the absorption band of the $OH^-$ vibration and lines of the ESR of $Fe^{3+},\; Mn^{2+}$. The position of the UV absorption edge and the shape and peak point of the absorption band of the $OH^-$ vibrational band changed monotonously up to a critical concentration of $Mg^{2+}$ ions. The mechanism of the incorporation of Mg ions changes at this concentration. The transition temperature was estimated by measuring the dielectric temperature behavior up to $1230^{\circ}C$ in a frequency range of 100Hz to 10MHz. EPR of $Mn^{2+}\;and\; Fe^{3+}$ ions were employed to investigated the Mg doping effects in the $LiNbO_3$ crystal. The increase of linewidths and the asymmetry of signals were observed in all crystals. New signals of $Fe^{3+}$ arising from the new centers were observed I the heavily Mg-doped crystals.

• Journal of the Korean Ceramic Society
• /
• v.35 no.8
• /
• pp.864-870
• /
• 1998

The effect of {{{{ {{Nb }_{2 }O }_{5 } }} and CoO addition on the temperature dependence of the {{{{ {BaTiO }_{3 } }}-based ceramic capa-citor has been studied. X7R with moderate temperature dependence has been developed by means of pre-cisely controlled {{{{ {{Nb }_{2 }O }_{5 } }}/CoO ratio. Dielectric constant(K) and dissipation factor(DF) were 3500 and 1.5% respectively. As the content of {{{{ {{Nb }_{2 }O }_{5 } }} was increased the curie temperature(Tc) was shifted to lower tem-perature and the dielectric constant at Tc was decreased. The proper addition of CoO with {{{{ {{Nb }_{2 }O }_{5 } }} improved the temperature dependence of dielectric properties of the {{{{ {BaTiO }_{3 } }}-based ceramic capacitor.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.7
• /
• pp.347-351
• /
• 2004

The $ZnNb_2O_{6}$ ceramics with CuO(1, 3, 5wt%) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $950^{\circ}C$∼$1075^{\circ}C$ for 3hr in air The structural properties and the microwave dielectric properties of $ZnNb_2O_{6}$ ceramics were investigated with sintering temperature and the addition of CuO. Increasing the addition of CuO, the peak of second phase($Cu_3Nb_2O_{8}$) was increased. The grain size of the $ZnNb_2O_{6}$ ceramics with CuO was increased with CuO addition at same temperature. The dielectric constant of $ZnNb_2O_{6}$ ceramics with CuO was increased with sintering temperature and CuO addition. While the quality factor of the $ZnNb_2O_{6}$ ceramics with lwt% CuO depended on sinterability, the quality factor of $ZnNb_2O_{6}$ with 3wt% and 5wt% CuO depended on second Phase due to the CuO addition. The optimum dielectric Properties of $\varepsilon$$_{r}$ = 21.73 Q${\times}$f = 19,276 were obtained from the condition of 3wt% CuO addition and sintering temperature of $1025^{\circ}C$(3hr).

• Journal of the Korean Ceramic Society
• /
• v.39 no.9
• /
• pp.863-870
• /
• 2002

The Single phase $Pb(Fe_{1/2}Ta_{1/2})O_3$ (x=0.0∼1.0) solid solutions were successfully synthesized and their ordering structures as well as dielectric properties were investigated ${{r(Nb^{5+})=r(Ta^{5+})=0.78 {\AA},\;AW(Nb^{5+})=92.91,\;AW(Ta^{5+})=180.95}}$. While $Pb(Fe_{1/2}Ta_{1/2})O_3$ showed typical relaxor ferroelectric characteristics such as dielectric relaxation and diffuse phase transition, the sharpeness of the phase transition increased as $Ta^{5+}$ was replaced by $Nb^{5+}$ and finally $Pb(Fe_{1/2}Nb_{1/2})O_3$ showed normal ferroelectric characteristics with no dielectric relaxation. By using Raman spectroscopy, it was revealed that the $Fe^{3+}\;and\;Ta^{5+}\;of\;Pb(Fe_{1/2}Ta_{1/2})O_3$ were stoichiometrically 1:1 ordered within the short range which can be hardly probed even by TEM. Also, The degree of ordering in $Pb(Fe_{1/2}Ta_{1/2})O_3$ decreased as $Ta^{5+}$ was replaced by $Nb^{5+}$ and finally $Fe^{3+}\;and\;Nb^{5+}\;of\;Pb(Fe_{1/2}Nb_{1/2})O_3$ were completely disordered. The relaxor ferroelectric characteristics of $Pb(Fe_{1/2}Ta_{1/2})O_3$ could be correlated with the stoichiometric 1:1 ordering of B-site cations within the short range which can be hardly probed even by TEM. Also, the decrease of the relaxor ferroelectric characteristics with the replacement of $Ta^{5+}\;by\;Nb^{5+}$ could be correlated with the weakening of the ordering and the normal ferroelectric characteristics of $Pb(Fe_{1/2}Nb_{1/2})O_3$ could be correlated with the complete disordering of B-site cations.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06b
• /
• pp.185-217
• /
• 1996

Pb(Mg1/3Nb2/3)O3은 높은 유전율과 전기저항 및 유전율의 온도변화율이 적은 Pb계 relaxor의 대표적인 재료로서 적층 세라믹 콘덴서 재료에의 응용이 크게 기대되고 있다. 그러나 산화물 분말을 이용하는 일반적인 세라믹스 합성방법으로는 Pb(Mg1/3Nb2/3)O3의 단일상의 합성이 어렵고, 합성과정에서 저유전율상인 pyrochlore상이 합성이 어렵고, 합성과정에서 저유전율상인 pyrochlore상이 공존하여 Pb(Mg1/3Nb2/3)O3의 전기적 특성을 저하시킨다. 본연구에서는 용액을 이용하여 Pb(Mg1/3Nb2/3)O3의 단일상을 합성하고자 하였다. 출발물질로는 값싼 금속염인 Niobium Oxalate, magnesium Nitrate 및 Lead Nitrate를 선정하고 증류수에 용해하여 혼합용액을 제좋고, 합성방법으로는 초음파 분무 열분해법과 에멀젼법을 이용하였다. 초음파 분무 열분해법에서는 75$0^{\circ}C$에서 합성한 분말을 다시 75$0^{\circ}C$에서 하소하여 Pb(Mg1/3Nb2/3)O3 단일상을 합성할 수 있었으며, 에멀젼법에서는 80$0^{\circ}C$에서 Pb(Mg1/3Nb2/3)O3 단일상을 합성할 수 있었다.

• Journal of the Korean Ceramic Society
• /
• v.40 no.4
• /
• pp.346-349
• /
• 2003

Microwave dielectric characteristics and physical properties of the new Zr$_{1-x}$ (Bn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ (0.2$\leq$x$\geq$ 1.0) system have been investigated as a function of the amount of Bn$_{1}$3/Nb$_{2/3}$ $O_2$substitution. With increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content (x), two phase regions were observed: $\alpha$-Pb $O_2$ solid solution (x<0.4), mixture of the rutile type Zn$_{1}$3/Nb$_{2/3}$Ti $O_4$ and the $\alpha$-Pb $O_2$ solid solution (x$\geq$0.4). In the$\alpha$-Pb $O_2$solid solution region below x<0.4, the Q.f$_{0}$ value sharply increased and the Temperature Coefficient of the Resonant Frequency(TCF) decreased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ contents while dielectric constant (K) showed nearly same value. In the mixture region above x$\geq$4, the dielectric constant and TCF increased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content. Zr$_{1-x}$ (Zn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ materials have excellent microwave dielectric properties with K=44.0, Q.f$_{0}$ : 41000 GHz and TCF =-3.0 ppm/$^{\circ}C$ at x=0.35.=0.35. x=0.35.=0.35.